NL6804240A - - Google Patents

Info

Publication number
NL6804240A
NL6804240A NL6804240A NL6804240A NL6804240A NL 6804240 A NL6804240 A NL 6804240A NL 6804240 A NL6804240 A NL 6804240A NL 6804240 A NL6804240 A NL 6804240A NL 6804240 A NL6804240 A NL 6804240A
Authority
NL
Netherlands
Application number
NL6804240A
Other versions
NL151839B (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=24508770&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=NL6804240(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed filed Critical
Publication of NL6804240A publication Critical patent/NL6804240A/xx
Publication of NL151839B publication Critical patent/NL151839B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/113—Nitrides of boron or aluminum or gallium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/114—Nitrides of silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/957—Making metal-insulator-metal device

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Light Receiving Elements (AREA)
NL686804240A 1967-03-27 1968-03-26 Werkwijze voor het vervaardigen van een veldeffecttransistor met een geisoleerde stuurelektrode, alsmede aldus vervaardigde transistor. NL151839B (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US62605667A 1967-03-27 1967-03-27

Publications (2)

Publication Number Publication Date
NL6804240A true NL6804240A (fr) 1968-09-30
NL151839B NL151839B (nl) 1976-12-15

Family

ID=24508770

Family Applications (1)

Application Number Title Priority Date Filing Date
NL686804240A NL151839B (nl) 1967-03-27 1968-03-26 Werkwijze voor het vervaardigen van een veldeffecttransistor met een geisoleerde stuurelektrode, alsmede aldus vervaardigde transistor.

Country Status (7)

Country Link
US (1) US3475234A (fr)
BE (1) BE712551A (fr)
DE (1) DE1764056C2 (fr)
FR (1) FR1559352A (fr)
GB (1) GB1219986A (fr)
NL (1) NL151839B (fr)
SE (1) SE364142B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2051687A1 (fr) * 1969-07-11 1971-04-09 Rca Corp

Families Citing this family (88)

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US3979768A (en) * 1966-03-23 1976-09-07 Hitachi, Ltd. Semiconductor element having surface coating comprising silicon nitride and silicon oxide films
US3544399A (en) * 1966-10-26 1970-12-01 Hughes Aircraft Co Insulated gate field-effect transistor (igfet) with semiconductor gate electrode
US3710204A (en) * 1967-05-20 1973-01-09 Telefunken Patent A semiconductor device having a screen electrode of intrinsic semiconductor material
USRE30251E (en) * 1967-06-08 1980-04-08 U.S. Philips Corporation Semiconductor device comprising an insulated gate field effect transistor and method of manufacturing the same
US3676921A (en) * 1967-06-08 1972-07-18 Philips Corp Semiconductor device comprising an insulated gate field effect transistor and method of manufacturing the same
USRE31580E (en) * 1967-06-08 1984-05-01 U.S. Philips Corporation Insulated gate field-effect transistor comprising a mesa channel and a thicker surrounding oxide
NL162250C (nl) * 1967-11-21 1980-04-15 Philips Nv Halfgeleiderinrichting met een halfgeleiderlichaam, waarvan aan een hoofdoppervlak het halfgeleideroppervlak plaatselijk met een oxydelaag is bedekt, en werkwijze voor het vervaardigen van planaire halfgeleider- inrichtingen.
US3590272A (en) * 1968-09-25 1971-06-29 Westinghouse Electric Corp Mis solid-state memory elements unitizing stable and reproducible charges in an insulating layer
US3604107A (en) * 1969-04-17 1971-09-14 Collins Radio Co Doped oxide field effect transistors
US3649888A (en) * 1969-05-14 1972-03-14 Itt Dielectric structure for semiconductor device
US3660735A (en) * 1969-09-10 1972-05-02 Sprague Electric Co Complementary metal insulator silicon transistor pairs
NL96608C (fr) * 1969-10-03
US3633078A (en) * 1969-10-24 1972-01-04 Hughes Aircraft Co Stable n-channel tetrode
US3772102A (en) * 1969-10-27 1973-11-13 Gen Electric Method of transferring a desired pattern in silicon to a substrate layer
BE756646A (fr) * 1969-11-07 1971-03-01 Semi Conduttori S P A S G S So Procede pour la fabrication de dispositifs discrets a semi-conducteurs ou de circuits integres, et dispositifs obtenus par sa mise en oeuvre
DE2040180B2 (de) * 1970-01-22 1977-08-25 Intel Corp, Mountain View, Calif. (V.St.A.) Verfahren zur verhinderung von mechanischen bruechen einer duennen, die oberflaeche eines halbleiterkoerpers ueberdeckende isolierschichten ueberziehenden elektrisch leitenden schicht
US3714525A (en) * 1970-03-02 1973-01-30 Gen Electric Field-effect transistors with self registered gate which acts as diffusion mask during formation
US3670403A (en) * 1970-03-19 1972-06-20 Gen Electric Three masking step process for fabricating insulated gate field effect transistors
US4015281A (en) * 1970-03-30 1977-03-29 Hitachi, Ltd. MIS-FETs isolated on common substrate
DE2020531C2 (de) * 1970-04-27 1982-10-21 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Herstellung von Silizium-Höchstfrequenz-Planartransistoren
DE2021923B2 (de) * 1970-05-05 1976-07-22 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum herstellen eines feldeffekttransistors mit isolierter gateelektrode
US3755721A (en) * 1970-06-15 1973-08-28 Intel Corp Floating gate solid state storage device and method for charging and discharging same
US3753806A (en) * 1970-09-23 1973-08-21 Motorola Inc Increasing field inversion voltage of metal oxide on silicon integrated circuits
US3724065A (en) * 1970-10-01 1973-04-03 Texas Instruments Inc Fabrication of an insulated gate field effect transistor device
US3745647A (en) * 1970-10-07 1973-07-17 Rca Corp Fabrication of semiconductor devices
JPS4929785B1 (fr) * 1970-10-30 1974-08-07
US3700976A (en) * 1970-11-02 1972-10-24 Hughes Aircraft Co Insulated gate field effect transistor adapted for microwave applications
US4646119A (en) * 1971-01-14 1987-02-24 Rca Corporation Charge coupled circuits
US3771217A (en) * 1971-04-16 1973-11-13 Texas Instruments Inc Integrated circuit arrays utilizing discretionary wiring and method of fabricating same
JPS5443356B2 (fr) * 1971-06-16 1979-12-19
JPS5432314B1 (fr) * 1971-07-14 1979-10-13
US4011653A (en) * 1971-08-23 1977-03-15 Tokyo Shibaura Electric Co., Ltd. Method for manufacturing a semiconductor integrated circuit including an insulating gate type semiconductor transistor
NL161305C (nl) * 1971-11-20 1980-01-15 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderin- richting.
JPS4859781A (fr) * 1971-11-25 1973-08-22
JPS5121751B2 (fr) * 1971-12-24 1976-07-05
US3747200A (en) * 1972-03-31 1973-07-24 Motorola Inc Integrated circuit fabrication method
DE2314260A1 (de) * 1972-05-30 1973-12-13 Ibm Ladungsgekoppelte halbleiteranordnung und verfahren zu ihrer herstellung
US3873373A (en) * 1972-07-06 1975-03-25 Bryan H Hill Fabrication of a semiconductor device
US3891190A (en) * 1972-07-07 1975-06-24 Intel Corp Integrated circuit structure and method for making integrated circuit structure
US3771218A (en) * 1972-07-13 1973-11-13 Ibm Process for fabricating passivated transistors
JPS4953776A (fr) * 1972-09-27 1974-05-24
US3865654A (en) * 1972-11-01 1975-02-11 Ibm Complementary field effect transistor having p doped silicon gates and process for making the same
US3836409A (en) * 1972-12-07 1974-09-17 Fairchild Camera Instr Co Uniplanar ccd structure and method
US3841926A (en) * 1973-01-02 1974-10-15 Ibm Integrated circuit fabrication process
IT999786B (it) * 1973-01-15 1976-03-10 Fairchild Camera Instr Co Procedimento per la fabbricazione di transistori a semiconduttore di ossido metallico e prodotto ottenuto con il procedimento
US3853634A (en) * 1973-05-21 1974-12-10 Fairchild Camera Instr Co Self-aligned implanted barrier two-phase charge coupled devices
US4042953A (en) * 1973-08-01 1977-08-16 Micro Power Systems, Inc. High temperature refractory metal contact assembly and multiple layer interconnect structure
US3888706A (en) * 1973-08-06 1975-06-10 Rca Corp Method of making a compact guard-banded mos integrated circuit device using framelike diffusion-masking structure
GB1447675A (en) * 1973-11-23 1976-08-25 Mullard Ltd Semiconductor devices
US3947298A (en) * 1974-01-25 1976-03-30 Raytheon Company Method of forming junction regions utilizing R.F. sputtering
DE2445030C2 (de) * 1974-09-20 1982-09-02 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen eines integrierten MOS-Feldeffekttransistors mit einem elektrisch isolierten schwebenden Gate und einem Steuergate und Verwendung des Verfahrens zur Herstellung eines programmierbaren Festwertspeichers
JPS5193874A (en) * 1975-02-15 1976-08-17 Handotaisochino seizohoho
JPS5220312B1 (fr) * 1975-07-29 1977-06-02
US3974003A (en) * 1975-08-25 1976-08-10 Ibm Chemical vapor deposition of dielectric films containing Al, N, and Si
JPS531633B1 (fr) * 1975-10-08 1978-01-20
JPS5214592B1 (fr) * 1976-08-17 1977-04-22
JPS54380B1 (fr) * 1976-10-20 1979-01-10
JPS5233473B1 (fr) * 1976-12-20 1977-08-29
JPS5313079U (fr) * 1977-03-31 1978-02-03
IT1110843B (it) * 1978-02-27 1986-01-06 Rca Corp Contatto affondato per dispositivi mos di tipo complementare
US4148133A (en) * 1978-05-08 1979-04-10 Sperry Rand Corporation Polysilicon mask for etching thick insulator
US4192059A (en) * 1978-06-06 1980-03-11 Rockwell International Corporation Process for and structure of high density VLSI circuits, having inherently self-aligned gates and contacts for FET devices and conducting lines
US4229755A (en) * 1978-08-15 1980-10-21 Rockwell International Corporation Fabrication of very large scale integrated circuits containing N-channel silicon gate nonvolatile memory elements
JPS597231B2 (ja) * 1978-08-30 1984-02-17 ティーディーケイ株式会社 絶縁ゲイト型電界効果半導体装置の作製方法
JPS5522878A (en) * 1978-08-30 1980-02-18 Tdk Corp Insulation gate type field effect semiconductor device
JPS606110B2 (ja) * 1978-08-30 1985-02-15 ティーディーケイ株式会社 半導体装置の作製方法
US4305973A (en) * 1979-07-24 1981-12-15 Hughes Aircraft Company Laser annealed double conductor structure
US4364167A (en) * 1979-11-28 1982-12-21 General Motors Corporation Programming an IGFET read-only-memory
US4299862A (en) * 1979-11-28 1981-11-10 General Motors Corporation Etching windows in thick dielectric coatings overlying semiconductor device surfaces
US4370669A (en) * 1980-07-16 1983-01-25 General Motors Corporation Reduced source capacitance ring-shaped IGFET load transistor in mesa-type integrated circuit
US4363109A (en) * 1980-11-28 1982-12-07 General Motors Corporation Capacitance coupled eeprom
US4318936A (en) * 1981-01-23 1982-03-09 General Motors Corporation Method of making strain sensor in fragile web
US4364165A (en) * 1981-05-28 1982-12-21 General Motors Corporation Late programming using a silicon nitride interlayer
US4365405A (en) * 1981-05-28 1982-12-28 General Motors Corporation Method of late programming read only memory devices
US4358889A (en) * 1981-05-28 1982-11-16 General Motors Corporation Process for making a late programming enhanced contact ROM
US4359817A (en) * 1981-05-28 1982-11-23 General Motors Corporation Method for making late programmable read-only memory devices
US4402128A (en) * 1981-07-20 1983-09-06 Rca Corporation Method of forming closely spaced lines or contacts in semiconductor devices
US4486943A (en) * 1981-12-16 1984-12-11 Inmos Corporation Zero drain overlap and self aligned contact method for MOS devices
US4633572A (en) * 1983-02-22 1987-01-06 General Motors Corporation Programming power paths in an IC by combined depletion and enhancement implants
US4547959A (en) * 1983-02-22 1985-10-22 General Motors Corporation Uses for buried contacts in integrated circuits
US4516145A (en) * 1983-08-31 1985-05-07 Storage Technology Partners Reduction of contact resistance in CMOS integrated circuit chips and the product thereof
US4728617A (en) * 1986-11-04 1988-03-01 Intel Corporation Method of fabricating a MOSFET with graded source and drain regions
US5091326A (en) * 1988-03-02 1992-02-25 Advanced Micro Devices, Inc. EPROM element employing self-aligning process
US5293073A (en) * 1989-06-27 1994-03-08 Kabushiki Kaisha Toshiba Electrode structure of a semiconductor device which uses a copper wire as a bonding wire
US5102816A (en) * 1990-03-27 1992-04-07 Sematech, Inc. Staircase sidewall spacer for improved source/drain architecture
US6201283B1 (en) * 1999-09-08 2001-03-13 Trw Inc. Field effect transistor with double sided airbridge
US9484546B2 (en) 2013-05-15 2016-11-01 Universal Display Corporation OLED with compact contact design and self-aligned insulators
US9515181B2 (en) 2014-08-06 2016-12-06 Qualcomm Incorporated Semiconductor device with self-aligned back side features

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BE650116A (fr) * 1963-07-05 1900-01-01
GB1053104A (fr) * 1963-08-20
US3295030A (en) * 1963-12-18 1966-12-27 Signetics Corp Field effect transistor and method
US3355637A (en) * 1965-04-15 1967-11-28 Rca Corp Insulated-gate field effect triode with an insulator having the same atomic spacing as the channel
US3402081A (en) * 1965-06-30 1968-09-17 Ibm Method for controlling the electrical characteristics of a semiconductor surface and product produced thereby
US3427514A (en) * 1966-10-13 1969-02-11 Rca Corp Mos tetrode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2051687A1 (fr) * 1969-07-11 1971-04-09 Rca Corp

Also Published As

Publication number Publication date
DE1764056B1 (de) 1972-03-09
DE1764056C2 (de) 1984-02-16
SE364142B (fr) 1974-02-11
BE712551A (fr) 1968-07-31
FR1559352A (fr) 1969-03-07
GB1219986A (en) 1971-01-20
US3475234A (en) 1969-10-28
NL151839B (nl) 1976-12-15

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Legal Events

Date Code Title Description
V1 Lapsed because of non-payment of the annual fee
NL80 Abbreviated name of patent owner mentioned of already nullified patent

Owner name: WESTERN ELECTRI