NL6803688A - - Google Patents

Info

Publication number
NL6803688A
NL6803688A NL6803688A NL6803688A NL6803688A NL 6803688 A NL6803688 A NL 6803688A NL 6803688 A NL6803688 A NL 6803688A NL 6803688 A NL6803688 A NL 6803688A NL 6803688 A NL6803688 A NL 6803688A
Authority
NL
Netherlands
Application number
NL6803688A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6803688A publication Critical patent/NL6803688A/xx

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34DC amplifiers in which all stages are DC-coupled
    • H03F3/343DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/347DC amplifiers in which all stages are DC-coupled with semiconductor devices only in integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/763Polycrystalline semiconductor regions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611Combinations of BJTs and one or more of diodes, resistors or capacitors
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/036Diffusion, nonselective
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/043Dual dielectric
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/049Equivalence and options
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/05Etch and refill
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/085Isolated-integrated
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/122Polycrystalline

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
NL6803688A 1967-03-16 1968-03-14 NL6803688A (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR99074A FR1527898A (fr) 1967-03-16 1967-03-16 Agencement de dispositifs semi-conducteurs portés par un support commun et son procédé de fabrication

Publications (1)

Publication Number Publication Date
NL6803688A true NL6803688A (en:Method) 1968-09-17

Family

ID=8627031

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6803688A NL6803688A (en:Method) 1967-03-16 1968-03-14

Country Status (8)

Country Link
US (1) US3500139A (en:Method)
BE (1) BE712370A (en:Method)
CH (1) CH466873A (en:Method)
DE (1) DE1639364A1 (en:Method)
ES (1) ES351652A1 (en:Method)
FR (1) FR1527898A (en:Method)
GB (1) GB1214203A (en:Method)
NL (1) NL6803688A (en:Method)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4946800A (en) * 1965-09-28 1990-08-07 Li Chou H Method for making solid-state device utilizing isolation grooves
US7038290B1 (en) 1965-09-28 2006-05-02 Li Chou H Integrated circuit device
US6979877B1 (en) * 1965-09-28 2005-12-27 Li Chou H Solid-state device
US6849918B1 (en) * 1965-09-28 2005-02-01 Chou H. Li Miniaturized dielectrically isolated solid state device
US5696402A (en) * 1965-09-28 1997-12-09 Li; Chou H. Integrated circuit device
US3894893A (en) * 1968-03-30 1975-07-15 Kyodo Denshi Gijyutsu Kk Method for the production of monocrystal-polycrystal semiconductor devices
US3753803A (en) * 1968-12-06 1973-08-21 Hitachi Ltd Method of dividing semiconductor layer into a plurality of isolated regions
FR2080849A6 (en:Method) * 1970-02-06 1971-11-26 Radiotechnique Compelec
DE2106540A1 (de) * 1970-02-13 1971-08-19 Texas Instruments Inc Halbleiterschaltung und Verfahren zu ihrer Herstellung
NL169936C (nl) * 1970-07-10 1982-09-01 Philips Nv Halfgeleiderinrichting omvattende een halfgeleiderlichaam met een althans ten dele in het halfgeleiderlichaam verzonken oxydepatroon.
US3648125A (en) * 1971-02-02 1972-03-07 Fairchild Camera Instr Co Method of fabricating integrated circuits with oxidized isolation and the resulting structure
NL166156C (nl) * 1971-05-22 1981-06-15 Philips Nv Halfgeleiderinrichting bevattende ten minste een op een halfgeleidersubstraatlichaam aangebrachte halfge- leiderlaag met ten minste een isolatiezone, welke een in de halfgeleiderlaag verzonken isolatielaag uit door plaatselijke thermische oxydatie van het half- geleidermateriaal van de halfgeleiderlaag gevormd isolerend materiaal bevat en een werkwijze voor het vervaardigen daarvan.
US3912556A (en) * 1971-10-27 1975-10-14 Motorola Inc Method of fabricating a scannable light emitting diode array
US3859127A (en) * 1972-01-24 1975-01-07 Motorola Inc Method and material for passivating the junctions of mesa type semiconductor devices
US3772577A (en) * 1972-02-10 1973-11-13 Texas Instruments Inc Guard ring mesa construction for low and high voltage npn and pnp transistors and diodes and method of making same
SE361232B (en:Method) * 1972-11-09 1973-10-22 Ericsson Telefon Ab L M
US3932927A (en) * 1973-03-05 1976-01-20 Motorola, Inc. Scannable light emitting diode array and method
US3913124A (en) * 1974-01-03 1975-10-14 Motorola Inc Integrated semiconductor transistor structure with epitaxial contact to the buried sub-collector including fabrication method therefor
US4042949A (en) * 1974-05-08 1977-08-16 Motorola, Inc. Semiconductor devices
US3998673A (en) * 1974-08-16 1976-12-21 Pel Chow Method for forming electrically-isolated regions in integrated circuits utilizing selective epitaxial growth
JPS5146083A (en) * 1974-10-18 1976-04-20 Hitachi Ltd Handotaisochino seizohoho
US4032950A (en) * 1974-12-06 1977-06-28 Hughes Aircraft Company Liquid phase epitaxial process for growing semi-insulating gaas layers
US4542579A (en) * 1975-06-30 1985-09-24 International Business Machines Corporation Method for forming aluminum oxide dielectric isolation in integrated circuits
US4048649A (en) * 1976-02-06 1977-09-13 Transitron Electronic Corporation Superintegrated v-groove isolated bipolar and vmos transistors
US4104086A (en) * 1977-08-15 1978-08-01 International Business Machines Corporation Method for forming isolated regions of silicon utilizing reactive ion etching
US4140558A (en) * 1978-03-02 1979-02-20 Bell Telephone Laboratories, Incorporated Isolation of integrated circuits utilizing selective etching and diffusion
US4240843A (en) * 1978-05-23 1980-12-23 Western Electric Company, Inc. Forming self-guarded p-n junctions by epitaxial regrowth of amorphous regions using selective radiation annealing
US4670769A (en) * 1979-04-09 1987-06-02 Harris Corporation Fabrication of isolated regions for use in self-aligning device process utilizing selective oxidation
US4255207A (en) * 1979-04-09 1981-03-10 Harris Corporation Fabrication of isolated regions for use in self-aligning device process utilizing selective oxidation
JPS5636143A (en) * 1979-08-31 1981-04-09 Hitachi Ltd Manufacture of semiconductor device
USRE32090E (en) * 1980-05-07 1986-03-04 At&T Bell Laboratories Silicon integrated circuits
US4771328A (en) * 1983-10-13 1988-09-13 International Business Machine Corporation Semiconductor device and process
US4583282A (en) * 1984-09-14 1986-04-22 Motorola, Inc. Process for self-aligned buried layer, field guard, and isolation
US4573257A (en) * 1984-09-14 1986-03-04 Motorola, Inc. Method of forming self-aligned implanted channel-stop and buried layer utilizing non-single crystal alignment key
US4574469A (en) * 1984-09-14 1986-03-11 Motorola, Inc. Process for self-aligned buried layer, channel-stop, and isolation
US4983226A (en) * 1985-02-14 1991-01-08 Texas Instruments, Incorporated Defect free trench isolation devices and method of fabrication
US4767722A (en) * 1986-03-24 1988-08-30 Siliconix Incorporated Method for making planar vertical channel DMOS structures
US5332920A (en) * 1988-02-08 1994-07-26 Kabushiki Kaisha Toshiba Dielectrically isolated high and low voltage substrate regions
US5049968A (en) * 1988-02-08 1991-09-17 Kabushiki Kaisha Toshiba Dielectrically isolated substrate and semiconductor device using the same
JP2788269B2 (ja) * 1988-02-08 1998-08-20 株式会社東芝 半導体装置およびその製造方法
US5512774A (en) * 1988-02-08 1996-04-30 Kabushiki Kaisha Toshiba Dielectrically isolated substrate and semiconductor device using the same
JP2685244B2 (ja) * 1988-09-30 1997-12-03 株式会社日本自動車部品総合研究所 半導体装置の製造方法
US5066603A (en) * 1989-09-06 1991-11-19 Gte Laboratories Incorporated Method of manufacturing static induction transistors
US5457068A (en) * 1992-11-30 1995-10-10 Texas Instruments Incorporated Monolithic integration of microwave silicon devices and low loss transmission lines
KR940016546A (ko) * 1992-12-23 1994-07-23 프레데릭 얀 스미트 반도체 장치 및 제조방법
JP2003282939A (ja) * 2002-03-26 2003-10-03 Oki Degital Imaging:Kk 半導体発光装置及びその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3271685A (en) * 1963-06-20 1966-09-06 Westinghouse Electric Corp Multipurpose molecular electronic semiconductor device for performing amplifier and oscillator-mixer functions including degenerative feedback means
US3370995A (en) * 1965-08-02 1968-02-27 Texas Instruments Inc Method for fabricating electrically isolated semiconductor devices in integrated circuits
US3400309A (en) * 1965-10-18 1968-09-03 Ibm Monolithic silicon device containing dielectrically isolatng film of silicon carbide

Also Published As

Publication number Publication date
FR1527898A (fr) 1968-06-07
US3500139A (en) 1970-03-10
DE1639364A1 (de) 1971-02-25
ES351652A1 (es) 1969-06-01
CH466873A (de) 1968-12-31
BE712370A (en:Method) 1968-09-18
GB1214203A (en) 1970-12-02

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