NL6800572A - - Google Patents

Info

Publication number
NL6800572A
NL6800572A NL6800572A NL6800572A NL6800572A NL 6800572 A NL6800572 A NL 6800572A NL 6800572 A NL6800572 A NL 6800572A NL 6800572 A NL6800572 A NL 6800572A NL 6800572 A NL6800572 A NL 6800572A
Authority
NL
Netherlands
Application number
NL6800572A
Other versions
NL160983C (nl
NL160983B (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6800572A publication Critical patent/NL6800572A/xx
Publication of NL160983B publication Critical patent/NL160983B/xx
Application granted granted Critical
Publication of NL160983C publication Critical patent/NL160983C/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H10P32/15—
    • H10P95/00—
    • H10W15/00—
    • H10W15/01—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion
NL6800572.A 1967-01-16 1968-01-12 Werkwijze voor het vervaardigen van een transistor met een collectorgebied voorzien van een sterk gedoteerd begraven gebied. NL160983C (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US60943867A 1967-01-16 1967-01-16

Publications (3)

Publication Number Publication Date
NL6800572A true NL6800572A (enExample) 1968-07-17
NL160983B NL160983B (nl) 1979-07-16
NL160983C NL160983C (nl) 1979-12-17

Family

ID=24440801

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6800572.A NL160983C (nl) 1967-01-16 1968-01-12 Werkwijze voor het vervaardigen van een transistor met een collectorgebied voorzien van een sterk gedoteerd begraven gebied.

Country Status (4)

Country Link
US (1) US3479233A (enExample)
FR (1) FR1548858A (enExample)
GB (1) GB1194752A (enExample)
NL (1) NL160983C (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3655457A (en) * 1968-08-06 1972-04-11 Ibm Method of making or modifying a pn-junction by ion implantation
BE758683A (fr) * 1969-11-10 1971-05-10 Ibm Procede de fabrication d'un dispositif monolithique auto-isolant et structure de transistor a socle
FR2092730A1 (en) * 1970-06-12 1972-01-28 Radiotechnique Compelec Boron diffusion in silicon - from diborane, oxygen nitrogen mixtures
IT947674B (it) * 1971-04-28 1973-05-30 Ibm Tecnica di diffusione epitassiale per la fabbricazione di transisto ri bipolari e transistori fet
DE2131993C2 (de) * 1971-06-28 1984-10-11 Telefunken electronic GmbH, 7100 Heilbronn Verfahren zum Herstellen eines niederohmigen Anschlusses
US3967307A (en) * 1973-07-30 1976-06-29 Signetics Corporation Lateral bipolar transistor for integrated circuits and method for forming the same
US4170501A (en) * 1978-02-15 1979-10-09 Rca Corporation Method of making a semiconductor integrated circuit device utilizing simultaneous outdiffusion and autodoping during epitaxial deposition
US4571275A (en) * 1983-12-19 1986-02-18 International Business Machines Corporation Method for minimizing autodoping during epitaxial deposition utilizing a graded pattern subcollector

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3183178A (en) * 1961-06-06 1965-05-11 Hydrocarbon Research Inc Two stage hydrogenating process employing two different particle sizes
NL297820A (enExample) * 1962-10-05
US3268374A (en) * 1963-04-24 1966-08-23 Texas Instruments Inc Method of producing a field-effect transistor
US3340598A (en) * 1965-04-19 1967-09-12 Teledyne Inc Method of making field effect transistor device

Also Published As

Publication number Publication date
US3479233A (en) 1969-11-18
NL160983C (nl) 1979-12-17
NL160983B (nl) 1979-07-16
FR1548858A (enExample) 1968-12-06
GB1194752A (en) 1970-06-10

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Legal Events

Date Code Title Description
V1 Lapsed because of non-payment of the annual fee
NL80 Information provided on patent owner name for an already discontinued patent

Owner name: IBM