FR1548858A - - Google Patents

Info

Publication number
FR1548858A
FR1548858A FR1548858DA FR1548858A FR 1548858 A FR1548858 A FR 1548858A FR 1548858D A FR1548858D A FR 1548858DA FR 1548858 A FR1548858 A FR 1548858A
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Application granted granted Critical
Publication of FR1548858A publication Critical patent/FR1548858A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H10P32/15—
    • H10P95/00—
    • H10W15/00—
    • H10W15/01—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion
FR1548858D 1967-01-16 1967-12-07 Expired FR1548858A (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US60943867A 1967-01-16 1967-01-16

Publications (1)

Publication Number Publication Date
FR1548858A true FR1548858A (enExample) 1968-12-06

Family

ID=24440801

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1548858D Expired FR1548858A (enExample) 1967-01-16 1967-12-07

Country Status (4)

Country Link
US (1) US3479233A (enExample)
FR (1) FR1548858A (enExample)
GB (1) GB1194752A (enExample)
NL (1) NL160983C (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2067058A1 (enExample) * 1969-11-10 1971-08-13 Ibm
FR2092730A1 (en) * 1970-06-12 1972-01-28 Radiotechnique Compelec Boron diffusion in silicon - from diborane, oxygen nitrogen mixtures
FR2134360A1 (enExample) * 1971-04-28 1972-12-08 Ibm

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3655457A (en) * 1968-08-06 1972-04-11 Ibm Method of making or modifying a pn-junction by ion implantation
DE2131993C2 (de) * 1971-06-28 1984-10-11 Telefunken electronic GmbH, 7100 Heilbronn Verfahren zum Herstellen eines niederohmigen Anschlusses
US3967307A (en) * 1973-07-30 1976-06-29 Signetics Corporation Lateral bipolar transistor for integrated circuits and method for forming the same
US4170501A (en) * 1978-02-15 1979-10-09 Rca Corporation Method of making a semiconductor integrated circuit device utilizing simultaneous outdiffusion and autodoping during epitaxial deposition
US4571275A (en) * 1983-12-19 1986-02-18 International Business Machines Corporation Method for minimizing autodoping during epitaxial deposition utilizing a graded pattern subcollector

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3183178A (en) * 1961-06-06 1965-05-11 Hydrocarbon Research Inc Two stage hydrogenating process employing two different particle sizes
NL297820A (enExample) * 1962-10-05
US3268374A (en) * 1963-04-24 1966-08-23 Texas Instruments Inc Method of producing a field-effect transistor
US3340598A (en) * 1965-04-19 1967-09-12 Teledyne Inc Method of making field effect transistor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2067058A1 (enExample) * 1969-11-10 1971-08-13 Ibm
FR2092730A1 (en) * 1970-06-12 1972-01-28 Radiotechnique Compelec Boron diffusion in silicon - from diborane, oxygen nitrogen mixtures
FR2134360A1 (enExample) * 1971-04-28 1972-12-08 Ibm

Also Published As

Publication number Publication date
US3479233A (en) 1969-11-18
NL160983C (nl) 1979-12-17
NL6800572A (enExample) 1968-07-17
NL160983B (nl) 1979-07-16
GB1194752A (en) 1970-06-10

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Legal Events

Date Code Title Description
ST Notification of lapse