NL6704438A - - Google Patents

Info

Publication number
NL6704438A
NL6704438A NL6704438A NL6704438A NL6704438A NL 6704438 A NL6704438 A NL 6704438A NL 6704438 A NL6704438 A NL 6704438A NL 6704438 A NL6704438 A NL 6704438A NL 6704438 A NL6704438 A NL 6704438A
Authority
NL
Netherlands
Application number
NL6704438A
Other versions
NL149860B (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6704438A publication Critical patent/NL6704438A/xx
Publication of NL149860B publication Critical patent/NL149860B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C23C16/12—Deposition of aluminium only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C23C16/14—Deposition of only one other metal element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/142—Semiconductor-metal-semiconductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
NL6704438A 1966-03-29 1967-03-28 Werkwijze voor het aanbrengen van een metaallaag van wolfraam of molybdeen op een halfgeleiderlichaam, alsmede halfgeleiderinrichting voorzien van schottkykeerlaag verkregen volgens deze werkwijze. NL149860B (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1020866 1966-03-29
JP2020866 1966-03-29

Publications (2)

Publication Number Publication Date
NL6704438A true NL6704438A (en:Method) 1967-10-02
NL149860B NL149860B (nl) 1976-06-15

Family

ID=26345437

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6704438A NL149860B (nl) 1966-03-29 1967-03-28 Werkwijze voor het aanbrengen van een metaallaag van wolfraam of molybdeen op een halfgeleiderlichaam, alsmede halfgeleiderinrichting voorzien van schottkykeerlaag verkregen volgens deze werkwijze.

Country Status (8)

Country Link
US (1) US3515583A (en:Method)
BE (1) BE696170A (en:Method)
CH (1) CH474856A (en:Method)
DE (1) DE1614140B2 (en:Method)
FR (1) FR1517241A (en:Method)
GB (1) GB1107700A (en:Method)
NL (1) NL149860B (en:Method)
SE (1) SE336848B (en:Method)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3562606A (en) * 1969-08-13 1971-02-09 Varian Associates Subsurface gallium arsenide schottky-type diode and method of fabricating same
US3664874A (en) * 1969-12-31 1972-05-23 Nasa Tungsten contacts on silicon substrates
DE2012063A1 (de) * 1970-03-13 1971-09-30 Siemens Ag Verfahren zum Herstellen von aus Alu minium Legierungen bestehenden Kontakt metallschichten an Halbleiterbauelementen
US4024299A (en) * 1973-10-15 1977-05-17 General Electric Company Process for preparing magnetic member
FR2396974A1 (fr) 1977-07-04 1979-02-02 Anvar Procede de detection et d'etude d'une activite cellulaire ou analogue et moyens pour la mise en oeuvre d'un tel procede
US4206540A (en) * 1978-06-02 1980-06-10 International Rectifier Corporation Schottky device and method of manufacture using palladium and platinum intermetallic alloys and titanium barrier
DE3279114D1 (en) * 1981-05-15 1988-11-17 Fairchild Semiconductor Schottky diode - polycrystalline silicon resistor memory cell
JP6839939B2 (ja) * 2016-07-26 2021-03-10 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1226925A (en) * 1915-08-09 1917-05-22 Arthur J Thowless Ductile filament.
US2475601A (en) * 1946-04-26 1949-07-12 Ohio Commw Eng Co Bonding of metal carbonyl deposits
US3349297A (en) * 1964-06-23 1967-10-24 Bell Telephone Labor Inc Surface barrier semiconductor translating device
DE1289188B (de) * 1964-12-15 1969-02-13 Telefunken Patent Metallbasistransistor

Also Published As

Publication number Publication date
DE1614140B2 (de) 1971-08-19
FR1517241A (fr) 1968-03-15
GB1107700A (en) 1968-03-27
CH474856A (de) 1969-06-30
DE1614140A1 (de) 1971-02-25
BE696170A (en:Method) 1967-09-01
SE336848B (en:Method) 1971-07-19
NL149860B (nl) 1976-06-15
US3515583A (en) 1970-06-02

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