NL6616015A - - Google Patents

Info

Publication number
NL6616015A
NL6616015A NL6616015A NL6616015A NL6616015A NL 6616015 A NL6616015 A NL 6616015A NL 6616015 A NL6616015 A NL 6616015A NL 6616015 A NL6616015 A NL 6616015A NL 6616015 A NL6616015 A NL 6616015A
Authority
NL
Netherlands
Application number
NL6616015A
Other versions
NL153377B (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6616015A publication Critical patent/NL6616015A/xx
Publication of NL153377B publication Critical patent/NL153377B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
    • H01J29/456—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions exhibiting no discontinuities, e.g. consisting of uniform layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/043—Photoconductive layers characterised by having two or more layers or characterised by their composite structure
    • G03G5/0433—Photoconductive layers characterised by having two or more layers or characterised by their composite structure all layers being inorganic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08207—Selenium-based
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
    • H01J9/233—Manufacture of photoelectric screens or charge-storage screens
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
NL666616015A 1965-11-15 1966-11-14 Foto-elektrische inrichting en werkwijze voor het vervaardigen daarvan. NL153377B (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US507728A US3350595A (en) 1965-11-15 1965-11-15 Low dark current photoconductive device

Publications (2)

Publication Number Publication Date
NL6616015A true NL6616015A (it) 1967-05-16
NL153377B NL153377B (nl) 1977-05-16

Family

ID=24019868

Family Applications (1)

Application Number Title Priority Date Filing Date
NL666616015A NL153377B (nl) 1965-11-15 1966-11-14 Foto-elektrische inrichting en werkwijze voor het vervaardigen daarvan.

Country Status (7)

Country Link
US (1) US3350595A (it)
JP (1) JPS4613044Y1 (it)
DE (1) DE1564544B2 (it)
FR (1) FR1501227A (it)
GB (1) GB1135460A (it)
NL (1) NL153377B (it)
SE (1) SE334539B (it)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3405298A (en) * 1965-03-04 1968-10-08 Rca Corp Photoconductive device having a target including a selenium blocking layer
GB1163974A (en) * 1966-02-28 1969-09-10 Hitachi Ltd Photoconductive Film
US3517241A (en) * 1966-08-31 1970-06-23 Japan Broadcasting Corp Photoconductive target comprising aluminum,selenium and arsenic triselenide layers
US3539883A (en) * 1967-03-15 1970-11-10 Ion Physics Corp Antireflection coatings for semiconductor devices
US3990894A (en) * 1969-10-29 1976-11-09 Katsuragawa Denki Kabushiki Kaisha Method of preparing photosensitive element for use in electrophotography
US3904408A (en) * 1969-11-14 1975-09-09 Canon Kk Electrophotographic member with graded tellurium content
US3922579A (en) * 1970-04-22 1975-11-25 Hitachi Ltd Photoconductive target
JPS4937862B1 (it) * 1970-12-29 1974-10-12
US3861913A (en) * 1972-03-31 1975-01-21 Ibm Electrophotographic charge generation layer
US3890524A (en) * 1972-06-27 1975-06-17 Hitachi Ltd Photo-conductive target comprising both solid and porous layers
US3890525A (en) * 1972-07-03 1975-06-17 Hitachi Ltd Photoconductive target of an image pickup tube comprising graded selenium-tellurium layer
US3783324A (en) * 1972-09-11 1974-01-01 Rca Corp Photosensitive charge storage electrode having a selectively conducting protective layer of matching valence band on its surface
DE2248054B2 (de) * 1972-09-30 1974-12-12 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Elektrophotographisches Aufzeichnungsmaterial
DE2305407C3 (de) * 1973-02-03 1978-04-06 Standard Elektrik Lorenz Ag, 7000 Stuttgart Elektroradiografisches Aufzeichnungsmaterial
US4126457A (en) * 1973-05-30 1978-11-21 Xerox Corporation Evaporation technique for producing high temperature photoreceptor alloys
JPS5052927A (it) * 1973-09-10 1975-05-10
US4001014A (en) * 1973-09-17 1977-01-04 Matsushita Electric Industrial Co., Ltd. Electrophotographic photosensitive plate having tellurium present in varying concentrations across its thickness
US4086512A (en) * 1973-10-27 1978-04-25 U.S. Philips Corporation Camera tube employing silicon-chalcogenide target with heterojunction
DE2452934A1 (de) * 1973-12-07 1975-06-12 Xerox Corp Xerographisches element
JPS5530657B2 (it) * 1974-06-14 1980-08-12
US4103203A (en) * 1974-09-09 1978-07-25 Rca Corporation Wafer mounting structure for pickup tube
US4021375A (en) * 1975-09-15 1977-05-03 Rca Corporation Method of fabricating polycrystalline selenium imaging devices
US4132918A (en) * 1975-09-15 1979-01-02 Rca Corporation Polycrystalline selenium imaging devices
JPS5244194A (en) * 1975-10-03 1977-04-06 Hitachi Ltd Photoelectric conversion device
US4246510A (en) * 1976-01-07 1981-01-20 The United States Of America As Represented By The Secretary Of The Army Retina for pyroelectric vidicon
US4242373A (en) * 1976-02-20 1980-12-30 Hitachi, Ltd. Method for vapor depositing a cerium oxide film
JPS6051774B2 (ja) * 1976-11-17 1985-11-15 株式会社日立製作所 撮像管タ−ゲツト
NL7805418A (nl) * 1978-05-19 1979-11-21 Philips Nv Opneembuis.
NL7902838A (nl) * 1979-04-11 1980-10-14 Philips Nv Opneembuis.
JPS55159445A (en) * 1979-05-31 1980-12-11 Ricoh Co Ltd Electrophotographic receptor
JPS56103477A (en) * 1980-01-21 1981-08-18 Hitachi Ltd Photoelectric conversion element

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3310700A (en) * 1964-05-28 1967-03-21 Rca Corp Photoconductive device incorporating stabilizing layers on the face of the selenium layer

Also Published As

Publication number Publication date
FR1501227A (fr) 1967-11-10
NL153377B (nl) 1977-05-16
JPS4613044Y1 (it) 1971-05-10
SE334539B (it) 1971-04-26
US3350595A (en) 1967-10-31
DE1564544B2 (de) 1971-05-19
DE1564544A1 (de) 1970-04-30
GB1135460A (en) 1968-12-04

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Legal Events

Date Code Title Description
V1 Lapsed because of non-payment of the annual fee
NL80 Abbreviated name of patent owner mentioned of already nullified patent

Owner name: RCA