NL6614858A - - Google Patents

Info

Publication number
NL6614858A
NL6614858A NL6614858A NL6614858A NL6614858A NL 6614858 A NL6614858 A NL 6614858A NL 6614858 A NL6614858 A NL 6614858A NL 6614858 A NL6614858 A NL 6614858A NL 6614858 A NL6614858 A NL 6614858A
Authority
NL
Netherlands
Application number
NL6614858A
Other versions
NL145396B (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to NL666614858A priority Critical patent/NL145396B/xx
Priority to DE19671614286 priority patent/DE1614286C3/de
Priority to DK518467AA priority patent/DK122554B/da
Priority to CH1455567A priority patent/CH477765A/de
Priority to NO170178A priority patent/NO120746B/no
Priority to AT940367A priority patent/AT280350B/de
Priority to SE14270/67A priority patent/SE334949B/xx
Priority to US676235A priority patent/US3702428A/en
Priority to GB47387/67A priority patent/GB1206427A/en
Priority to BE705379D priority patent/BE705379A/xx
Priority to ES346217A priority patent/ES346217A1/es
Priority to BR194062/67A priority patent/BR6794062D0/pt
Priority to FR125187A priority patent/FR1541490A/fr
Publication of NL6614858A publication Critical patent/NL6614858A/xx
Priority to US05/527,236 priority patent/US3930909A/en
Publication of NL145396B publication Critical patent/NL145396B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0119—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs
    • H10D84/0121—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs the complementary BJTs being vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Crushing And Grinding (AREA)
NL666614858A 1966-10-21 1966-10-21 Werkwijze ter vervaardiging van een geintegreerde halfgeleiderinrichting en geintegreerde halfgeleiderinrichting, vervaardigd volgens de werkwijze. NL145396B (nl)

Priority Applications (14)

Application Number Priority Date Filing Date Title
NL666614858A NL145396B (nl) 1966-10-21 1966-10-21 Werkwijze ter vervaardiging van een geintegreerde halfgeleiderinrichting en geintegreerde halfgeleiderinrichting, vervaardigd volgens de werkwijze.
DE19671614286 DE1614286C3 (de) 1966-10-21 1967-10-17 Halbleiteranordnung und Verfahren zu ihrer Herstellung
US676235A US3702428A (en) 1966-10-21 1967-10-18 Monolithic ic with complementary transistors and plural buried layers
CH1455567A CH477765A (de) 1966-10-21 1967-10-18 Verfahren zur Herstellung einer Halbleitervorrichtung und nach diesem Verfahren hergestellte Halbleitervorrichtung
NO170178A NO120746B (enrdf_load_stackoverflow) 1966-10-21 1967-10-18
AT940367A AT280350B (de) 1966-10-21 1967-10-18 Verfahren zur Herstellung einer Halbleitervorrichtung
SE14270/67A SE334949B (enrdf_load_stackoverflow) 1966-10-21 1967-10-18
DK518467AA DK122554B (da) 1966-10-21 1967-10-18 Fremgangsmåde til fremstilling af et halvlederorgan.
GB47387/67A GB1206427A (en) 1966-10-21 1967-10-18 Manufacturing semiconductor devices
BE705379D BE705379A (enrdf_load_stackoverflow) 1966-10-21 1967-10-19
ES346217A ES346217A1 (es) 1966-10-21 1967-10-19 Un dispositivo semiconductor.
BR194062/67A BR6794062D0 (pt) 1966-10-21 1967-10-20 Processo para fabricacao de um dispositivo semi-condutor e um dispositivo semi-condutor produzido por este processo
FR125187A FR1541490A (fr) 1966-10-21 1967-10-20 Dispositif semi-conducteur et procédé pour sa fabrication
US05/527,236 US3930909A (en) 1966-10-21 1974-11-26 Method of manufacturing a semiconductor device utilizing simultaneous outdiffusion during epitaxial growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL666614858A NL145396B (nl) 1966-10-21 1966-10-21 Werkwijze ter vervaardiging van een geintegreerde halfgeleiderinrichting en geintegreerde halfgeleiderinrichting, vervaardigd volgens de werkwijze.

Publications (2)

Publication Number Publication Date
NL6614858A true NL6614858A (enrdf_load_stackoverflow) 1968-04-22
NL145396B NL145396B (nl) 1975-03-17

Family

ID=19797975

Family Applications (1)

Application Number Title Priority Date Filing Date
NL666614858A NL145396B (nl) 1966-10-21 1966-10-21 Werkwijze ter vervaardiging van een geintegreerde halfgeleiderinrichting en geintegreerde halfgeleiderinrichting, vervaardigd volgens de werkwijze.

Country Status (11)

Country Link
US (1) US3702428A (enrdf_load_stackoverflow)
AT (1) AT280350B (enrdf_load_stackoverflow)
BE (1) BE705379A (enrdf_load_stackoverflow)
BR (1) BR6794062D0 (enrdf_load_stackoverflow)
CH (1) CH477765A (enrdf_load_stackoverflow)
DK (1) DK122554B (enrdf_load_stackoverflow)
ES (1) ES346217A1 (enrdf_load_stackoverflow)
GB (1) GB1206427A (enrdf_load_stackoverflow)
NL (1) NL145396B (enrdf_load_stackoverflow)
NO (1) NO120746B (enrdf_load_stackoverflow)
SE (1) SE334949B (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4831063A (enrdf_load_stackoverflow) * 1971-08-25 1973-04-24
JPS4879584A (enrdf_load_stackoverflow) * 1972-01-25 1973-10-25

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3909318A (en) * 1971-04-14 1975-09-30 Philips Corp Method of forming complementary devices utilizing outdiffusion and selective oxidation
US3891480A (en) * 1973-10-01 1975-06-24 Honeywell Inc Bipolar semiconductor device construction
US4013484A (en) * 1976-02-25 1977-03-22 Intel Corporation High density CMOS process
US4087900A (en) * 1976-10-18 1978-05-09 Bell Telephone Laboratories, Incorporated Fabrication of semiconductor integrated circuit structure including injection logic configuration compatible with complementary bipolar transistors utilizing simultaneous formation of device regions
US4485552A (en) * 1980-01-18 1984-12-04 International Business Machines Corporation Complementary transistor structure and method for manufacture
US4357622A (en) * 1980-01-18 1982-11-02 International Business Machines Corporation Complementary transistor structure
JPS5730359A (en) * 1980-07-30 1982-02-18 Nec Corp Semiconductor device
NL8104862A (nl) * 1981-10-28 1983-05-16 Philips Nv Halfgeleiderinrichting, en werkwijze ter vervaardiging daarvan.
EP0093304B1 (en) * 1982-04-19 1986-01-15 Matsushita Electric Industrial Co., Ltd. Semiconductor ic and method of making the same
JPS5994861A (ja) * 1982-11-24 1984-05-31 Hitachi Ltd 半導体集積回路装置及びその製造方法
US4940671A (en) * 1986-04-18 1990-07-10 National Semiconductor Corporation High voltage complementary NPN/PNP process
US5529939A (en) * 1986-09-26 1996-06-25 Analog Devices, Incorporated Method of making an integrated circuit with complementary isolated bipolar transistors
US5132235A (en) * 1987-08-07 1992-07-21 Siliconix Incorporated Method for fabricating a high voltage MOS transistor
IT1218230B (it) * 1988-04-28 1990-04-12 Sgs Thomson Microelectronics Procedimento per la formazione di un circuito integrato su un substrato di tipo n,comprendente transistori pnp e npn verticali e isolati fra loro
US4951115A (en) * 1989-03-06 1990-08-21 International Business Machines Corp. Complementary transistor structure and method for manufacture
US4910160A (en) * 1989-06-06 1990-03-20 National Semiconductor Corporation High voltage complementary NPN/PNP process
US5369042A (en) * 1993-03-05 1994-11-29 Texas Instruments Incorporated Enhanced performance bipolar transistor process
JP3409548B2 (ja) * 1995-12-12 2003-05-26 ソニー株式会社 半導体装置の製造方法
US6977420B2 (en) * 1998-09-30 2005-12-20 National Semiconductor Corporation ESD protection circuit utilizing floating lateral clamp diodes
US11355585B2 (en) 2019-10-01 2022-06-07 Analog Devices International Unlimited Company Bipolar junction transistor, and a method of forming a charge control structure for a bipolar junction transistor
US11404540B2 (en) 2019-10-01 2022-08-02 Analog Devices International Unlimited Company Bipolar junction transistor, and a method of forming a collector for a bipolar junction transistor
US11563084B2 (en) 2019-10-01 2023-01-24 Analog Devices International Unlimited Company Bipolar junction transistor, and a method of forming an emitter for a bipolar junction transistor

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1047388A (enrdf_load_stackoverflow) * 1962-10-05
US3327182A (en) * 1965-06-14 1967-06-20 Westinghouse Electric Corp Semiconductor integrated circuit structure and method of making the same
US3391035A (en) * 1965-08-20 1968-07-02 Westinghouse Electric Corp Method of making p-nu-junction devices by diffusion
US3412295A (en) * 1965-10-19 1968-11-19 Sprague Electric Co Monolithic structure with three-region complementary transistors
US3449643A (en) * 1966-09-09 1969-06-10 Hitachi Ltd Semiconductor integrated circuit device
US3502951A (en) * 1968-01-02 1970-03-24 Singer Co Monolithic complementary semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4831063A (enrdf_load_stackoverflow) * 1971-08-25 1973-04-24
JPS4879584A (enrdf_load_stackoverflow) * 1972-01-25 1973-10-25

Also Published As

Publication number Publication date
BE705379A (enrdf_load_stackoverflow) 1968-04-19
GB1206427A (en) 1970-09-23
US3702428A (en) 1972-11-07
AT280350B (de) 1970-04-10
NL145396B (nl) 1975-03-17
CH477765A (de) 1969-08-31
SE334949B (enrdf_load_stackoverflow) 1971-05-10
BR6794062D0 (pt) 1973-12-27
DE1614286A1 (de) 1970-06-25
ES346217A1 (es) 1969-03-16
DK122554B (da) 1972-03-13
DE1614286B2 (de) 1975-07-17
NO120746B (enrdf_load_stackoverflow) 1970-11-30

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Legal Events

Date Code Title Description
V1 Lapsed because of non-payment of the annual fee
NL80 Information provided on patent owner name for an already discontinued patent

Owner name: PHILIPS