NL6608968A - - Google Patents
Info
- Publication number
- NL6608968A NL6608968A NL6608968A NL6608968A NL6608968A NL 6608968 A NL6608968 A NL 6608968A NL 6608968 A NL6608968 A NL 6608968A NL 6608968 A NL6608968 A NL 6608968A NL 6608968 A NL6608968 A NL 6608968A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/701—IGFETs having ferroelectric gate insulators, e.g. ferroelectric FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0097929 | 1965-07-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL6608968A true NL6608968A (cg-RX-API-DMAC10.html) | 1967-01-02 |
Family
ID=7521098
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL6608968A NL6608968A (cg-RX-API-DMAC10.html) | 1965-07-01 | 1966-06-28 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3426255A (cg-RX-API-DMAC10.html) |
| AT (1) | AT264589B (cg-RX-API-DMAC10.html) |
| CH (1) | CH449781A (cg-RX-API-DMAC10.html) |
| DE (1) | DE1514495C3 (cg-RX-API-DMAC10.html) |
| GB (1) | GB1139749A (cg-RX-API-DMAC10.html) |
| NL (1) | NL6608968A (cg-RX-API-DMAC10.html) |
| SE (1) | SE316839B (cg-RX-API-DMAC10.html) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3450966A (en) * | 1967-09-12 | 1969-06-17 | Rca Corp | Ferroelectric insulated gate field effect device |
| US3531696A (en) * | 1967-09-30 | 1970-09-29 | Nippon Electric Co | Semiconductor device with hysteretic capacity vs. voltage characteristics |
| US3569795A (en) * | 1969-05-29 | 1971-03-09 | Us Army | Voltage-variable, ferroelectric capacitor |
| JPS4819113B1 (cg-RX-API-DMAC10.html) * | 1969-08-27 | 1973-06-11 | ||
| US3731163A (en) * | 1972-03-22 | 1973-05-01 | United Aircraft Corp | Low voltage charge storage memory element |
| US3798619A (en) * | 1972-10-24 | 1974-03-19 | K Samofalov | Piezoelectric transducer memory with non-destructive read out |
| US4024560A (en) * | 1975-09-04 | 1977-05-17 | Westinghouse Electric Corporation | Pyroelectric-field effect electromagnetic radiation detector |
| US4473836A (en) * | 1982-05-03 | 1984-09-25 | Dalsa Inc. | Integrable large dynamic range photodetector element for linear and area integrated circuit imaging arrays |
| US4847517A (en) * | 1988-02-16 | 1989-07-11 | Ltv Aerospace & Defense Co. | Microwave tube modulator |
| US5109357A (en) * | 1988-04-22 | 1992-04-28 | Ramtron Corporation | DRAM memory cell and method of operation thereof for transferring increased amount of charge to a bit line |
| US5345414A (en) * | 1992-01-27 | 1994-09-06 | Rohm Co., Ltd. | Semiconductor memory device having ferroelectric film |
| US5504699A (en) * | 1994-04-08 | 1996-04-02 | Goller; Stuart E. | Nonvolatile magnetic analog memory |
| JP3532747B2 (ja) * | 1997-12-09 | 2004-05-31 | 富士通株式会社 | 強誘電体記憶装置、フラッシュメモリ、および不揮発性ランダムアクセスメモリ |
| JP2001118942A (ja) * | 1999-10-21 | 2001-04-27 | Matsushita Electronics Industry Corp | トンネルチャネルトランジスタおよびその駆動方法 |
| WO2011111309A1 (ja) * | 2010-03-11 | 2011-09-15 | パナソニック株式会社 | 焦電型温度センサを用いて温度を測定する方法 |
| US9166004B2 (en) * | 2010-12-23 | 2015-10-20 | Intel Corporation | Semiconductor device contacts |
| CN113257913A (zh) * | 2020-02-12 | 2021-08-13 | 中国科学院物理研究所 | 基于铁电畴反转的突触三端器件 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2791761A (en) * | 1955-02-18 | 1957-05-07 | Bell Telephone Labor Inc | Electrical switching and storage |
| NL97896C (cg-RX-API-DMAC10.html) * | 1955-02-18 | |||
| US3365631A (en) * | 1965-07-14 | 1968-01-23 | Ibm | Semiconductor-ferroelectric dielectrics |
-
1965
- 1965-07-01 DE DE1514495A patent/DE1514495C3/de not_active Expired
-
1966
- 1966-06-28 NL NL6608968A patent/NL6608968A/xx unknown
- 1966-06-29 US US561650A patent/US3426255A/en not_active Expired - Lifetime
- 1966-06-29 CH CH943566A patent/CH449781A/de unknown
- 1966-06-29 AT AT622366A patent/AT264589B/de active
- 1966-06-30 SE SE8991/66A patent/SE316839B/xx unknown
- 1966-06-30 GB GB29340/66A patent/GB1139749A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| CH449781A (de) | 1968-01-15 |
| DE1514495C3 (de) | 1974-10-17 |
| US3426255A (en) | 1969-02-04 |
| DE1514495B2 (de) | 1974-03-21 |
| SE316839B (cg-RX-API-DMAC10.html) | 1969-11-03 |
| AT264589B (de) | 1968-09-10 |
| GB1139749A (en) | 1969-01-15 |
| DE1514495A1 (de) | 1969-08-07 |