NL6601149A - - Google Patents
Info
- Publication number
- NL6601149A NL6601149A NL6601149A NL6601149A NL6601149A NL 6601149 A NL6601149 A NL 6601149A NL 6601149 A NL6601149 A NL 6601149A NL 6601149 A NL6601149 A NL 6601149A NL 6601149 A NL6601149 A NL 6601149A
- Authority
- NL
- Netherlands
Links
Classifications
- 
        - C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
 
- 
        - C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
 
- 
        - H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
 
- 
        - H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
 
- 
        - H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
 
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Vapour Deposition (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title | 
|---|---|---|---|
| DES0095337 | 1965-02-05 | 
Publications (1)
| Publication Number | Publication Date | 
|---|---|
| NL6601149A true NL6601149A (enrdf_load_html_response) | 1966-08-08 | 
Family
ID=7519300
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date | 
|---|---|---|---|
| NL6601149A NL6601149A (enrdf_load_html_response) | 1965-02-05 | 1966-01-28 | 
Country Status (7)
| Country | Link | 
|---|---|
| US (1) | US3445300A (enrdf_load_html_response) | 
| AT (1) | AT259019B (enrdf_load_html_response) | 
| CH (1) | CH476515A (enrdf_load_html_response) | 
| DE (1) | DE1544259A1 (enrdf_load_html_response) | 
| GB (1) | GB1135111A (enrdf_load_html_response) | 
| NL (1) | NL6601149A (enrdf_load_html_response) | 
| SE (1) | SE309223B (enrdf_load_html_response) | 
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| US3941647A (en) * | 1973-03-08 | 1976-03-02 | Siemens Aktiengesellschaft | Method of producing epitaxially semiconductor layers | 
| DE2843261C2 (de) * | 1978-10-04 | 1983-07-28 | Heraeus Quarzschmelze Gmbh, 6450 Hanau | Verfahren zum Wärmebehandeln von Halbleiterbauelementen | 
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| GB778383A (en) * | 1953-10-02 | 1957-07-03 | Standard Telephones Cables Ltd | Improvements in or relating to the production of material for semi-conductors | 
| DE1138481C2 (de) * | 1961-06-09 | 1963-05-22 | Siemens Ag | Verfahren zur Herstellung von Halbleiteranordnungen durch einkristalline Abscheidung von Halbleitermaterial aus der Gasphase | 
| NL288035A (enrdf_load_html_response) * | 1962-01-24 | |||
| US3200018A (en) * | 1962-01-29 | 1965-08-10 | Hughes Aircraft Co | Controlled epitaxial crystal growth by focusing electromagnetic radiation | 
| DE1250789B (de) * | 1962-07-09 | 1967-09-28 | Western Electric Company Incorporated, New York, N.Y. (V. St. A.) | Verfahren zum Züchten eines epitaktisch gewachsenen Einkristalles mit Hilfe einer Transportreaktion | 
| US3297501A (en) * | 1963-12-31 | 1967-01-10 | Ibm | Process for epitaxial growth of semiconductor single crystals | 
| GB1039748A (en) * | 1964-07-25 | 1966-08-24 | Ibm | Improvements relating to methods of growing silicon carbide crystals epitaxially | 
| US3354004A (en) * | 1964-11-17 | 1967-11-21 | Ibm | Method for enhancing efficiency of recovery of semi-conductor material in perturbable disproportionation systems | 
- 
        1965
        - 1965-02-03 DE DE19651544259 patent/DE1544259A1/de active Pending
 
- 
        1966
        - 1966-01-28 NL NL6601149A patent/NL6601149A/xx unknown
- 1966-02-01 US US524200A patent/US3445300A/en not_active Expired - Lifetime
- 1966-02-03 SE SE1419/66A patent/SE309223B/xx unknown
- 1966-02-03 GB GB4707/66A patent/GB1135111A/en not_active Expired
- 1966-02-03 CH CH151566A patent/CH476515A/de not_active IP Right Cessation
- 1966-02-04 AT AT103566A patent/AT259019B/de active
 
Also Published As
| Publication number | Publication date | 
|---|---|
| GB1135111A (en) | 1968-11-27 | 
| AT259019B (de) | 1967-12-27 | 
| SE309223B (enrdf_load_html_response) | 1969-03-17 | 
| DE1544259A1 (de) | 1970-07-09 | 
| CH476515A (de) | 1969-08-15 | 
| US3445300A (en) | 1969-05-20 |