NL6515706A - - Google Patents

Info

Publication number
NL6515706A
NL6515706A NL6515706A NL6515706A NL6515706A NL 6515706 A NL6515706 A NL 6515706A NL 6515706 A NL6515706 A NL 6515706A NL 6515706 A NL6515706 A NL 6515706A NL 6515706 A NL6515706 A NL 6515706A
Authority
NL
Netherlands
Application number
NL6515706A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6515706A publication Critical patent/NL6515706A/xx

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/14Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
NL6515706A 1964-12-23 1965-12-02 NL6515706A (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES94785A DE1262244B (de) 1964-12-23 1964-12-23 Verfahren zum epitaktischen Abscheiden einer kristallinen Schicht, insbesondere aus Halbleitermaterial

Publications (1)

Publication Number Publication Date
NL6515706A true NL6515706A (xx) 1966-06-24

Family

ID=7518937

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6515706A NL6515706A (xx) 1964-12-23 1965-12-02

Country Status (8)

Country Link
US (1) US3486933A (xx)
AT (3) AT263082B (xx)
CH (1) CH451886A (xx)
DE (1) DE1262244B (xx)
FR (1) FR1461829A (xx)
GB (1) GB1124328A (xx)
NL (1) NL6515706A (xx)
SE (1) SE334865B (xx)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1900116C3 (de) * 1969-01-02 1978-10-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen hxxochreiner, aus Silicium bestehender einkristalliner Schichten
US4020791A (en) * 1969-06-30 1977-05-03 Siemens Aktiengesellschaft Apparatus for indiffusing dopants into semiconductor material
US4496609A (en) * 1969-10-15 1985-01-29 Applied Materials, Inc. Chemical vapor deposition coating process employing radiant heat and a susceptor
DE2033444C3 (de) * 1970-07-06 1979-02-15 Siemens Ag Vorrichtung zum Eindiffundieren von Dotierstoffen in Scheiben aus Halbleitermaterial
NL7209297A (xx) * 1972-07-01 1974-01-03
DE2908288B1 (de) * 1979-03-03 1980-01-17 Heraeus Schott Quarzschmelze Glocke aus Quarzglas fuer halbleitertechnologische Zwecke
US5414927A (en) * 1993-03-30 1995-05-16 Union Oil Co Furnace elements made from graphite sheets

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1048638B (de) * 1957-07-02 1959-01-15 Siemens &. Halske Aktiengesellschaft, Berlin und München Verfahren zur Herstellung von Halbleitereinkristallen, insbesondere von Silizium durch thermische Zersetzung oder Reduktion
NL238464A (xx) * 1958-05-29
NL256255A (xx) * 1959-11-02
US3096209A (en) * 1960-05-18 1963-07-02 Ibm Formation of semiconductor bodies
BE607571A (xx) * 1960-09-09
NL270516A (xx) * 1960-11-30
NL271345A (xx) * 1960-11-30
US3243323A (en) * 1962-06-11 1966-03-29 Motorola Inc Gas etching
US3177100A (en) * 1963-09-09 1965-04-06 Rca Corp Depositing epitaxial layer of silicon from a vapor mixture of sih4 and h3
US3381114A (en) * 1963-12-28 1968-04-30 Nippon Electric Co Device for manufacturing epitaxial crystals

Also Published As

Publication number Publication date
AT269948B (de) 1969-04-10
FR1461829A (fr) 1966-12-09
CH451886A (de) 1968-05-15
AT278096B (de) 1970-01-26
GB1124328A (en) 1968-08-21
AT263082B (de) 1968-07-10
SE334865B (xx) 1971-05-10
DE1262244B (de) 1968-03-07
US3486933A (en) 1969-12-30

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