NL6406894A - - Google Patents

Info

Publication number
NL6406894A
NL6406894A NL6406894A NL6406894A NL6406894A NL 6406894 A NL6406894 A NL 6406894A NL 6406894 A NL6406894 A NL 6406894A NL 6406894 A NL6406894 A NL 6406894A NL 6406894 A NL6406894 A NL 6406894A
Authority
NL
Netherlands
Application number
NL6406894A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6406894A publication Critical patent/NL6406894A/xx

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/02Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
NL6406894A 1963-10-08 1964-06-17 NL6406894A (US07943777-20110517-C00090.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1963S0087768 DE1286512B (de) 1963-10-08 1963-10-08 Verfahren zur Herstellung von insbesondere stabfoermigen Halbleiterkristallen mit ueber den ganzen Kristall homogener oder annaehernd homogener Dotierung

Publications (1)

Publication Number Publication Date
NL6406894A true NL6406894A (US07943777-20110517-C00090.png) 1965-04-09

Family

ID=7514022

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6406894A NL6406894A (US07943777-20110517-C00090.png) 1963-10-08 1964-06-17

Country Status (5)

Country Link
AT (1) AT253566B (US07943777-20110517-C00090.png)
CH (1) CH432479A (US07943777-20110517-C00090.png)
DE (1) DE1286512B (US07943777-20110517-C00090.png)
GB (1) GB1031494A (US07943777-20110517-C00090.png)
NL (1) NL6406894A (US07943777-20110517-C00090.png)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2556711A (en) * 1947-10-29 1951-06-12 Bell Telephone Labor Inc Method of producing rectifiers and rectifier material
DE883784C (de) * 1949-04-06 1953-06-03 Sueddeutsche App Fabrik G M B Verfahren zur Herstellung von Flaechengleichrichtern und Kristallverstaerkerschichten aus Elementen
NL218408A (US07943777-20110517-C00090.png) * 1954-05-18 1900-01-01
DE1140549B (de) * 1954-05-18 1962-12-06 Siemens Ag Verfahren zum Herstellen von reinstem kristallinem Germanium, Verbindungen von Elementen der ó¾. und ó§.oder ó�. und ó÷. Gruppe des Periodischen Systems und von oxydischem Halbleitermaterial
DE1139812B (de) * 1958-12-09 1962-11-22 Siemens Ag Vorrichtung zur Gewinnung stabfoermiger Halbleiterkoerper und Verfahren zum Betrieb dieser Vorrichtung
DE1029941B (de) * 1955-07-13 1958-05-14 Siemens Ag Verfahren zur Herstellung von einkristallinen Halbleiterschichten
DE1130078B (de) * 1956-08-10 1962-05-24 Siemens Ag Verfahren zur Dotierung von Halbleiterkristallen fuer Halbleiterbauelemente
AT226278B (de) * 1960-06-14 1963-03-11 Siemens Ag Verfahren zum Herstellen homogen dotierter einkristalliner Körper aus einem halbleitenden Element

Also Published As

Publication number Publication date
AT253566B (de) 1967-04-10
GB1031494A (en) 1966-06-02
CH432479A (de) 1967-03-31
DE1286512B (de) 1969-01-09

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