NL298324A - - Google Patents

Info

Publication number
NL298324A
NL298324A NL298324DA NL298324A NL 298324 A NL298324 A NL 298324A NL 298324D A NL298324D A NL 298324DA NL 298324 A NL298324 A NL 298324A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of NL298324A publication Critical patent/NL298324A/xx
Priority claimed from US358841A external-priority patent/US3336484A/en

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/70Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices having only two electrodes and exhibiting negative resistance
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20Multistable switching devices, e.g. memristors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20Multistable switching devices, e.g. memristors
    • H10N70/231Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20Multistable switching devices, e.g. memristors
    • H10N70/253Multistable switching devices, e.g. memristors having three or more electrodes, e.g. transistor-like devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801Constructional details of multistable switching devices
    • H10N70/821Device geometry
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801Constructional details of multistable switching devices
    • H10N70/821Device geometry
    • H10N70/823Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801Constructional details of multistable switching devices
    • H10N70/821Device geometry
    • H10N70/826Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801Constructional details of multistable switching devices
    • H10N70/841Electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801Constructional details of multistable switching devices
    • H10N70/881Switching materials
    • H10N70/882Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8822Sulfides, e.g. CuS
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801Constructional details of multistable switching devices
    • H10N70/881Switching materials
    • H10N70/882Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825Selenides, e.g. GeSe
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801Constructional details of multistable switching devices
    • H10N70/881Switching materials
    • H10N70/882Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828Tellurides, e.g. GeSbTe
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801Constructional details of multistable switching devices
    • H10N70/881Switching materials
    • H10N70/883Oxides or nitrides
    • H10N70/8833Binary metal oxides, e.g. TaOx

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Control Of Resistance Heating (AREA)
  • Control Of Electrical Variables (AREA)
  • Contacts (AREA)
  • Acyclic And Carbocyclic Compounds In Medicinal Compositions (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thermistors And Varistors (AREA)
NL298324D 1962-09-28 NL298324A (enrdf_load_stackoverflow)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US22684362A 1962-09-28 1962-09-28
US25251063A 1963-01-18 1963-01-18
US25246763A 1963-01-18 1963-01-18
US25251163A 1963-01-18 1963-01-18
US28824163A 1963-06-17 1963-06-17
US358841A US3336484A (en) 1964-04-10 1964-04-10 Power switching circuit

Publications (1)

Publication Number Publication Date
NL298324A true NL298324A (enrdf_load_stackoverflow) 1900-01-01

Family

ID=27559185

Family Applications (2)

Application Number Title Priority Date Filing Date
NL298324D NL298324A (enrdf_load_stackoverflow) 1962-09-28
NL298324.A NL158968B (nl) 1962-09-28 1963-09-24 Elektrisch omschakelbare inrichting.

Family Applications After (1)

Application Number Title Priority Date Filing Date
NL298324.A NL158968B (nl) 1962-09-28 1963-09-24 Elektrisch omschakelbare inrichting.

Country Status (11)

Country Link
JP (2) JPS509475B1 (enrdf_load_stackoverflow)
AT (1) AT280428B (enrdf_load_stackoverflow)
CH (1) CH471441A (enrdf_load_stackoverflow)
DE (3) DE1465470A1 (enrdf_load_stackoverflow)
DK (1) DK118782B (enrdf_load_stackoverflow)
FI (1) FI45710C (enrdf_load_stackoverflow)
FR (2) FR1396321A (enrdf_load_stackoverflow)
GB (3) GB1070411A (enrdf_load_stackoverflow)
NL (2) NL158968B (enrdf_load_stackoverflow)
NO (1) NO127780B (enrdf_load_stackoverflow)
SE (3) SE355265B (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3648124A (en) * 1970-06-10 1972-03-07 Ibm Gated metal-semiconductor transition device
US3748501A (en) * 1971-04-30 1973-07-24 Energy Conversion Devices Inc Multi-terminal amorphous electronic control device
GB1469814A (en) * 1973-04-26 1977-04-06 Energy Conversion Devices Inc Solid state electronic device and circuit therefor
JPS5267532A (en) * 1975-12-03 1977-06-04 Nippon Telegr & Teleph Corp <Ntt> Semiconductor memory unit
GB2118790A (en) * 1982-02-16 1983-11-02 Bonar Instr Limited Universal motor control

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2751477A (en) * 1952-07-15 1956-06-19 Pittsburgh Plate Glass Co Electrical resistive device
US2948837A (en) * 1956-09-04 1960-08-09 Mc Graw Edison Co Solid state electronic switch and circuits therefor

Also Published As

Publication number Publication date
SE326499B (enrdf_load_stackoverflow) 1970-07-27
DE1488833C3 (de) 1975-07-24
SE355265B (enrdf_load_stackoverflow) 1973-04-09
GB1070412A (en) 1967-06-01
SE332024B (enrdf_load_stackoverflow) 1971-01-25
DK118782B (da) 1970-10-05
GB1108945A (en) 1968-04-10
NL158968B (nl) 1978-12-15
FI45710B (enrdf_load_stackoverflow) 1972-05-02
FR1436202A (fr) 1966-04-22
JPS509475B1 (enrdf_load_stackoverflow) 1975-04-12
FR1396321A (fr) 1965-04-23
DE1464574B1 (de) 1971-03-25
AT280428B (de) 1970-04-10
DE1465470A1 (de) 1969-08-07
GB1070411A (en) 1967-06-01
FI45710C (fi) 1972-08-10
JPS503916B1 (enrdf_load_stackoverflow) 1975-02-12
DE1488833B2 (de) 1972-04-13
CH471441A (de) 1969-04-15
DE1488833A1 (de) 1969-02-20
NO127780B (enrdf_load_stackoverflow) 1973-08-13

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