GB1070412A - Improvements in or relating to symmetrical current controlling devices - Google Patents
Improvements in or relating to symmetrical current controlling devicesInfo
- Publication number
- GB1070412A GB1070412A GB54994/66A GB5499466A GB1070412A GB 1070412 A GB1070412 A GB 1070412A GB 54994/66 A GB54994/66 A GB 54994/66A GB 5499466 A GB5499466 A GB 5499466A GB 1070412 A GB1070412 A GB 1070412A
- Authority
- GB
- United Kingdom
- Prior art keywords
- arsenic
- electrodes
- germanium
- semi
- gallium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 abstract 9
- 229910052785 arsenic Inorganic materials 0.000 abstract 7
- 229910052732 germanium Inorganic materials 0.000 abstract 6
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 5
- 229910052714 tellurium Inorganic materials 0.000 abstract 5
- 239000004065 semiconductor Substances 0.000 abstract 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 230000000903 blocking effect Effects 0.000 abstract 3
- 239000000203 mixture Substances 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 abstract 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 abstract 2
- 229910052733 gallium Inorganic materials 0.000 abstract 2
- 238000000227 grinding Methods 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 229910000831 Steel Inorganic materials 0.000 abstract 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 abstract 1
- 239000005864 Sulphur Substances 0.000 abstract 1
- 238000007792 addition Methods 0.000 abstract 1
- 239000003513 alkali Substances 0.000 abstract 1
- 150000001342 alkaline earth metals Chemical class 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 229910052792 caesium Inorganic materials 0.000 abstract 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 238000005266 casting Methods 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 229910052801 chlorine Inorganic materials 0.000 abstract 1
- 239000000460 chlorine Substances 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 230000007423 decrease Effects 0.000 abstract 1
- 238000005323 electroforming Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052742 iron Inorganic materials 0.000 abstract 1
- XCAUINMIESBTBL-UHFFFAOYSA-N lead(ii) sulfide Chemical compound [Pb]=S XCAUINMIESBTBL-UHFFFAOYSA-N 0.000 abstract 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 239000010959 steel Substances 0.000 abstract 1
- 150000004763 sulfides Chemical class 0.000 abstract 1
- 238000011282 treatment Methods 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/70—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices having only two electrodes and exhibiting negative resistance
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/253—Multistable switching devices, e.g. memristors having three or more electrodes, e.g. transistor-like devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8822—Sulfides, e.g. CuS
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8825—Selenides, e.g. GeSe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Thyristors (AREA)
- Control Of Resistance Heating (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Integrated Circuits (AREA)
- Control Of Electrical Variables (AREA)
- Semiconductor Memories (AREA)
- Thermistors And Varistors (AREA)
- Contacts (AREA)
- Acyclic And Carbocyclic Compounds In Medicinal Compositions (AREA)
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US22684362A | 1962-09-28 | 1962-09-28 | |
| US25246763A | 1963-01-18 | 1963-01-18 | |
| US25251163A | 1963-01-18 | 1963-01-18 | |
| US25251063A | 1963-01-18 | 1963-01-18 | |
| US28824163A | 1963-06-17 | 1963-06-17 | |
| US358841A US3336484A (en) | 1964-04-10 | 1964-04-10 | Power switching circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1070412A true GB1070412A (en) | 1967-06-01 |
Family
ID=27559185
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB37137/63A Expired GB1070411A (en) | 1962-09-28 | 1963-09-20 | Improvements in or relating to symmetrical current controlling devices |
| GB54994/66A Expired GB1070412A (en) | 1962-09-28 | 1963-09-20 | Improvements in or relating to symmetrical current controlling devices |
| GB15084/65A Expired GB1108945A (en) | 1962-09-28 | 1965-04-09 | Improvements in or relating to power switching circuits |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB37137/63A Expired GB1070411A (en) | 1962-09-28 | 1963-09-20 | Improvements in or relating to symmetrical current controlling devices |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB15084/65A Expired GB1108945A (en) | 1962-09-28 | 1965-04-09 | Improvements in or relating to power switching circuits |
Country Status (11)
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3648124A (en) * | 1970-06-10 | 1972-03-07 | Ibm | Gated metal-semiconductor transition device |
| US3748501A (en) * | 1971-04-30 | 1973-07-24 | Energy Conversion Devices Inc | Multi-terminal amorphous electronic control device |
| GB1469814A (en) * | 1973-04-26 | 1977-04-06 | Energy Conversion Devices Inc | Solid state electronic device and circuit therefor |
| JPS5267532A (en) * | 1975-12-03 | 1977-06-04 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor memory unit |
| GB2118790A (en) * | 1982-02-16 | 1983-11-02 | Bonar Instr Limited | Universal motor control |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2751477A (en) * | 1952-07-15 | 1956-06-19 | Pittsburgh Plate Glass Co | Electrical resistive device |
| US2948837A (en) * | 1956-09-04 | 1960-08-09 | Mc Graw Edison Co | Solid state electronic switch and circuits therefor |
-
0
- NL NL298324D patent/NL298324A/xx unknown
-
1963
- 1963-06-20 DE DE19631465470 patent/DE1465470A1/de active Pending
- 1963-09-13 NO NO00150081A patent/NO127780B/no unknown
- 1963-09-20 GB GB37137/63A patent/GB1070411A/en not_active Expired
- 1963-09-20 GB GB54994/66A patent/GB1070412A/en not_active Expired
- 1963-09-24 NL NL298324.A patent/NL158968B/xx not_active IP Right Cessation
- 1963-09-25 DE DE19631464574 patent/DE1464574B1/de not_active Withdrawn
- 1963-09-26 AT AT09685/67A patent/AT280428B/de not_active IP Right Cessation
- 1963-09-27 FR FR948929A patent/FR1396321A/fr not_active Expired
- 1963-09-27 SE SE17320/67A patent/SE355265B/xx unknown
- 1963-09-27 CH CH1195163A patent/CH471441A/de not_active IP Right Cessation
- 1963-09-27 SE SE10575/63A patent/SE326499B/xx unknown
- 1963-09-28 DK DK456663AA patent/DK118782B/da unknown
-
1964
- 1964-01-14 FI FI640062A patent/FI45710C/fi active
-
1965
- 1965-04-09 SE SE04622/65A patent/SE332024B/xx unknown
- 1965-04-09 GB GB15084/65A patent/GB1108945A/en not_active Expired
- 1965-04-09 FR FR12738A patent/FR1436202A/fr not_active Expired
- 1965-04-09 DE DE1488833A patent/DE1488833C3/de not_active Expired
-
1966
- 1966-10-14 JP JP41067254A patent/JPS509475B1/ja active Pending
- 1966-10-14 JP JP41067255A patent/JPS503916B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| NL158968B (nl) | 1978-12-15 |
| GB1108945A (en) | 1968-04-10 |
| SE326499B (enrdf_load_stackoverflow) | 1970-07-27 |
| FR1436202A (fr) | 1966-04-22 |
| DE1488833A1 (de) | 1969-02-20 |
| SE355265B (enrdf_load_stackoverflow) | 1973-04-09 |
| SE332024B (enrdf_load_stackoverflow) | 1971-01-25 |
| JPS503916B1 (enrdf_load_stackoverflow) | 1975-02-12 |
| DK118782B (da) | 1970-10-05 |
| FI45710C (fi) | 1972-08-10 |
| CH471441A (de) | 1969-04-15 |
| FR1396321A (fr) | 1965-04-23 |
| AT280428B (de) | 1970-04-10 |
| DE1465470A1 (de) | 1969-08-07 |
| DE1488833B2 (de) | 1972-04-13 |
| DE1488833C3 (de) | 1975-07-24 |
| GB1070411A (en) | 1967-06-01 |
| DE1464574B1 (de) | 1971-03-25 |
| NO127780B (enrdf_load_stackoverflow) | 1973-08-13 |
| NL298324A (enrdf_load_stackoverflow) | 1900-01-01 |
| JPS509475B1 (enrdf_load_stackoverflow) | 1975-04-12 |
| FI45710B (enrdf_load_stackoverflow) | 1972-05-02 |
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