FR1436202A - Circuit de commutation de courant - Google Patents

Circuit de commutation de courant

Info

Publication number
FR1436202A
FR1436202A FR12738A FR12738A FR1436202A FR 1436202 A FR1436202 A FR 1436202A FR 12738 A FR12738 A FR 12738A FR 12738 A FR12738 A FR 12738A FR 1436202 A FR1436202 A FR 1436202A
Authority
FR
France
Prior art keywords
switching circuit
current switching
current
circuit
switching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR12738A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US358841A external-priority patent/US3336484A/en
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Priority to FR12738A priority Critical patent/FR1436202A/fr
Application granted granted Critical
Publication of FR1436202A publication Critical patent/FR1436202A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/70—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices having only two electrodes and exhibiting negative resistance
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/253—Multistable switching devices, e.g. memristors having three or more electrodes, e.g. transistor-like devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8822—Sulfides, e.g. CuS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Control Of Resistance Heating (AREA)
  • Thyristors (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Contacts (AREA)
  • Control Of Electrical Variables (AREA)
  • Acyclic And Carbocyclic Compounds In Medicinal Compositions (AREA)
  • Thermistors And Varistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR12738A 1962-09-28 1965-04-09 Circuit de commutation de courant Expired FR1436202A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR12738A FR1436202A (fr) 1962-09-28 1965-04-09 Circuit de commutation de courant

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US22684362A 1962-09-28 1962-09-28
US25246763A 1963-01-18 1963-01-18
US25251063A 1963-01-18 1963-01-18
US25251163A 1963-01-18 1963-01-18
US28824163A 1963-06-17 1963-06-17
US358841A US3336484A (en) 1964-04-10 1964-04-10 Power switching circuit
FR12738A FR1436202A (fr) 1962-09-28 1965-04-09 Circuit de commutation de courant

Publications (1)

Publication Number Publication Date
FR1436202A true FR1436202A (fr) 1966-04-22

Family

ID=27559185

Family Applications (2)

Application Number Title Priority Date Filing Date
FR948929A Expired FR1396321A (fr) 1962-09-28 1963-09-27 Dispositif à l'état solide de commande de courants électriques
FR12738A Expired FR1436202A (fr) 1962-09-28 1965-04-09 Circuit de commutation de courant

Family Applications Before (1)

Application Number Title Priority Date Filing Date
FR948929A Expired FR1396321A (fr) 1962-09-28 1963-09-27 Dispositif à l'état solide de commande de courants électriques

Country Status (11)

Country Link
JP (2) JPS503916B1 (fr)
AT (1) AT280428B (fr)
CH (1) CH471441A (fr)
DE (3) DE1465470A1 (fr)
DK (1) DK118782B (fr)
FI (1) FI45710C (fr)
FR (2) FR1396321A (fr)
GB (3) GB1070412A (fr)
NL (2) NL158968B (fr)
NO (1) NO127780B (fr)
SE (3) SE355265B (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3648124A (en) * 1970-06-10 1972-03-07 Ibm Gated metal-semiconductor transition device
US3748501A (en) * 1971-04-30 1973-07-24 Energy Conversion Devices Inc Multi-terminal amorphous electronic control device
GB1469814A (en) * 1973-04-26 1977-04-06 Energy Conversion Devices Inc Solid state electronic device and circuit therefor
JPS5267532A (en) * 1975-12-03 1977-06-04 Nippon Telegr & Teleph Corp <Ntt> Semiconductor memory unit
GB2118790A (en) * 1982-02-16 1983-11-02 Bonar Instr Limited Universal motor control

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2751477A (en) * 1952-07-15 1956-06-19 Pittsburgh Plate Glass Co Electrical resistive device
US2948837A (en) * 1956-09-04 1960-08-09 Mc Graw Edison Co Solid state electronic switch and circuits therefor

Also Published As

Publication number Publication date
FI45710C (fi) 1972-08-10
GB1070412A (en) 1967-06-01
FI45710B (fr) 1972-05-02
DE1488833C3 (de) 1975-07-24
DE1488833A1 (de) 1969-02-20
NO127780B (fr) 1973-08-13
DE1488833B2 (de) 1972-04-13
AT280428B (de) 1970-04-10
DE1465470A1 (de) 1969-08-07
JPS509475B1 (fr) 1975-04-12
NL158968B (nl) 1978-12-15
DK118782B (da) 1970-10-05
DE1464574B1 (de) 1971-03-25
GB1070411A (en) 1967-06-01
NL298324A (fr) 1900-01-01
JPS503916B1 (fr) 1975-02-12
SE332024B (fr) 1971-01-25
FR1396321A (fr) 1965-04-23
GB1108945A (en) 1968-04-10
SE326499B (fr) 1970-07-27
SE355265B (fr) 1973-04-09
CH471441A (de) 1969-04-15

Similar Documents

Publication Publication Date Title
FR1353284A (fr) Interrupteur de circuit électrique
CH434382A (de) Elektrischer Koordinatenschalter
FR1436202A (fr) Circuit de commutation de courant
AT233654B (de) Elektrischer Schalter
FR1343823A (fr) Interrupteur limitateur du courant
CH416796A (de) Strombegrenzungsschalter
FR1395486A (fr) Circuit de commutation
FR1518364A (fr) Circuit de commutation
FR1413403A (fr) Circuit de commutation
AT275646B (de) Fehlerstrom-Schutzschalter
AT259672B (de) Fehlerstromschutzschalter
FR1362756A (fr) Disjoncteur à limitation de courant
AT246837B (de) Elektrischer Schalter
FR1345036A (fr) Circuit de commutation de standard de télévision
FR1342936A (fr) Circuit statique de commutation
FR1304516A (fr) Circuit électrique de commutation
FR1347629A (fr) Disjoncteur de courant de défaut
FR1320526A (fr) Circuit de commutation
FR1302120A (fr) Circuit de commutation
FR1333679A (fr) Circuit de commutation perfectionné
FR1337924A (fr) Circuits de commutation
FR1395080A (fr) Circuit de commutation
FR1319809A (fr) Traversée conductrice de courant
FR1354388A (fr) Appareils électriques de commutation
ES91271Y (es) Disyuntor eléctrico