NL295918A - - Google Patents

Info

Publication number
NL295918A
NL295918A NL295918DA NL295918A NL 295918 A NL295918 A NL 295918A NL 295918D A NL295918D A NL 295918DA NL 295918 A NL295918 A NL 295918A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL295918A publication Critical patent/NL295918A/xx
Priority claimed from DES80682A external-priority patent/DE1238987B/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B21/00—Unidirectional solidification of eutectic materials
    • C30B21/02—Unidirectional solidification of eutectic materials by normal casting or gradient freezing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B21/00—Unidirectional solidification of eutectic materials
    • C30B21/04—Unidirectional solidification of eutectic materials by zone-melting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
    • H01F1/40—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4
    • H01F1/401—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted
    • H01F1/404—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted of III-V type, e.g. In1-x Mnx As
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
    • H01F1/40—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4
    • H01F1/401—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted
    • H01F1/405—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted of IV type, e.g. Ge1-xMnx
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/80—Constructional details
    • H10N52/85—Materials of the active region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/917—Magnetic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S420/00—Alloys or metallic compositions
    • Y10S420/903—Semiconductive
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/929—Eutectic semiconductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12465—All metal or with adjacent metals having magnetic properties, or preformed fiber orientation coordinate with shape
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12486—Laterally noncoextensive components [e.g., embedded, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
NL295918D 1962-07-31 NL295918A (OSRAM)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DES80682A DE1238987B (de) 1961-08-10 1962-07-31 Halbleiterkoerper fuer Bauelemente mit richtungsabhaengigen elektrischen Eigenschaften
DES0084738 1963-04-18
DES84816A DE1281578B (de) 1962-07-31 1963-04-23 Sonde zum Erfassen magnetischer Felder unter Verwendung eines Halbleiterkoerpers fuer Bauelemente mit richtungsabhaengigen elektrischen Eigenschaften

Publications (1)

Publication Number Publication Date
NL295918A true NL295918A (OSRAM)

Family

ID=27212777

Family Applications (1)

Application Number Title Priority Date Filing Date
NL295918D NL295918A (OSRAM) 1962-07-31

Country Status (3)

Country Link
US (2) US3226225A (OSRAM)
DE (1) DE1281578B (OSRAM)
NL (1) NL295918A (OSRAM)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3335384A (en) * 1967-08-08 Rotary resistor arrangement employ- ing a galvanomagnetic semiconduc- tor field plate
US3331045A (en) * 1967-07-11 Galvano-magnetic semiconductor field plate
DE1288651B (de) * 1963-06-28 1969-02-06 Siemens Ag Anordnung elektrischer Dipole fuer Wellenlaengen unterhalb 1 mm und Verfahren zur Herstellung einer derartigen Anordnung
DE1214807B (de) * 1963-12-18 1966-04-21 Siemens Ag Halbleiterphotoelement
DE1244417B (de) * 1964-11-05 1967-07-13 Magnetfab Bonn Gmbh Metallischer Dauermagnetwerkstoff
DE1260047B (de) * 1965-03-24 1968-02-01 Siemens Ag Starkstrom-Kryotron
US3402979A (en) * 1965-03-30 1968-09-24 Bell Telephone Labor Inc Light polarizer
US3434827A (en) * 1965-07-16 1969-03-25 United Aircraft Corp Anisotropic monotectic alloys and process for making the same
US4371406A (en) * 1965-09-28 1983-02-01 Li Chou H Solid-state device
US3765956A (en) * 1965-09-28 1973-10-16 C Li Solid-state device
US3357872A (en) * 1965-10-18 1967-12-12 Texas Instruments Inc Semiconductor devices and methods for making same
US3421952A (en) * 1966-02-02 1969-01-14 Texas Instruments Inc Method of making high resistivity group iii-v compounds and alloys doped with iron from an iron-arsenide source
US3542541A (en) * 1966-03-15 1970-11-24 United Aircraft Corp Whisker reinforced alloys and method of making the same
US3447976A (en) * 1966-06-17 1969-06-03 Westinghouse Electric Corp Formation of heterojunction devices by epitaxial growth from solution
DE1665750C3 (de) * 1966-09-23 1974-02-21 Siemens Ag, 1000 Berlin U. 8000 Muenchen Magnetfeldabhängiger Widerstand mit streifenförmigem Metallraster zum Kurzschließen der Hallspannung
US3579820A (en) * 1969-06-24 1971-05-25 Siemens Ag Method of making galvanomagnetic resistor utilizing grid for short-circuiting hall voltage
GB1311659A (en) * 1969-07-30 1973-03-28 Secr Defence Electrical device substrates
BE760094A (fr) * 1969-12-09 1971-06-09 Siemens Ag Dispositif detecteur de rayonnement infra-rouge et son procede de fabrication
BE789873A (fr) * 1971-10-11 1973-04-09 Philips Nv Dispositif permettant de convertir un parametre d'entree en un parametre de sortie
US3837150A (en) * 1972-12-08 1974-09-24 Torit Corp Filtering apparatus with pneumatic intermittent cleaning
US4136435A (en) * 1973-10-10 1979-01-30 Li Chou H Method for making solid-state device
NL7414829A (nl) * 1973-11-17 1975-05-21 Sony Corp Magnetoresistief element.
ZA757388B (en) * 1974-12-16 1977-07-27 Photovoltaic Ceramic Corp Ferroelectric ceramic devices
JPS5559314A (en) * 1978-10-27 1980-05-02 Sony Corp Magnetic scale signal detector
US4690714A (en) * 1979-01-29 1987-09-01 Li Chou H Method of making active solid state devices
KR920008235B1 (ko) * 1986-06-10 1992-09-25 야마하 가부시끼가이샤 엔코더용 자기 저항 센서
US4984037A (en) * 1986-12-11 1991-01-08 Gte Laboratories Incorporated Semiconductor device with conductive rectifying rods
DE3903919A1 (de) * 1989-02-10 1990-08-16 Helmut Dr Weidlich Verfahren zur nutzbarmachung der kinetischen energie von elektronen
US5111254A (en) * 1990-08-17 1992-05-05 Gte Laboratories Incorporated Floating gate array transistors
US20040144999A1 (en) * 1995-06-07 2004-07-29 Li Chou H. Integrated circuit device
US7118942B1 (en) 2000-09-27 2006-10-10 Li Chou H Method of making atomic integrated circuit device
US20100276733A1 (en) * 2000-09-27 2010-11-04 Li Choa H Solid-state circuit device
TWI270242B (en) * 2004-11-05 2007-01-01 Ind Tech Res Inst Magnetic field enhanced photovoltaic devices
IN2013DE03078A (OSRAM) * 2013-10-17 2015-04-24 Council Scient Ind Res

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2894234A (en) * 1959-07-07 Electric variable resistance devices
US3082507A (en) * 1963-03-26 Magnetically responsive resistance device
BE466591A (OSRAM) * 1945-07-13
US2704708A (en) * 1948-08-23 1955-03-22 Westinghouse Freins & Signaux Method for the preparation of germanium
US2778802A (en) * 1954-04-26 1957-01-22 Battelle Development Corp Intermetallic compounds of groups iii and v metals containing small amounts of nickel, cobalt or iron
US2813048A (en) * 1954-06-24 1957-11-12 Bell Telephone Labor Inc Temperature gradient zone-melting
US2858275A (en) * 1954-12-23 1958-10-28 Siemens Ag Mixed-crystal semiconductor devices
US3042887A (en) * 1958-09-15 1962-07-03 Siemens Ag Magnetic-field responsive resistance device
US3134083A (en) * 1962-10-04 1964-05-19 Gen Dynamics Corp Hall device construction

Also Published As

Publication number Publication date
US3267405A (en) 1966-08-16
DE1281578B (de) 1968-10-31
US3226225A (en) 1965-12-28

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