NL288035A - - Google Patents
Info
- Publication number
- NL288035A NL288035A NL288035DA NL288035A NL 288035 A NL288035 A NL 288035A NL 288035D A NL288035D A NL 288035DA NL 288035 A NL288035 A NL 288035A
- Authority
- NL
- Netherlands
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/006—Apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/037—Diffusion-deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/057—Gas flow control
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/925—Fluid growth doping control, e.g. delta doping
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US168425A US3173814A (en) | 1962-01-24 | 1962-01-24 | Method of controlled doping in an epitaxial vapor deposition process using a diluentgas |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL288035A true NL288035A (US20080293856A1-20081127-C00150.png) |
Family
ID=22611430
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL288035D NL288035A (US20080293856A1-20081127-C00150.png) | 1962-01-24 |
Country Status (5)
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1335282A (fr) * | 1961-08-30 | 1963-08-16 | Gen Electric | Composés semi-conducteurs, procédés de préparation et de dépôt de ceux-ci, et dispositifs semi-conducteurs ainsi obtenus |
| NL298518A (US20080293856A1-20081127-C00150.png) * | 1962-11-15 | |||
| US3291658A (en) * | 1963-06-28 | 1966-12-13 | Ibm | Process of making tunnel diodes that results in a peak current that is maintained over a long period of time |
| DE1238105B (de) * | 1963-07-17 | 1967-04-06 | Siemens Ag | Verfahren zum Herstellen von pn-UEbergaengen in Silizium |
| US3393088A (en) * | 1964-07-01 | 1968-07-16 | North American Rockwell | Epitaxial deposition of silicon on alpha-aluminum |
| US3502515A (en) * | 1964-09-28 | 1970-03-24 | Philco Ford Corp | Method of fabricating semiconductor device which includes region in which minority carriers have short lifetime |
| US3502516A (en) * | 1964-11-06 | 1970-03-24 | Siemens Ag | Method for producing pure semiconductor material for electronic purposes |
| DE1544259A1 (de) * | 1965-02-05 | 1970-07-09 | Siemens Ag | Verfahren zum Herstellen von gleichmaessigen epitaktischen Aufwachsschichten |
| US3414434A (en) * | 1965-06-30 | 1968-12-03 | North American Rockwell | Single crystal silicon on spinel insulators |
| US3492175A (en) * | 1965-12-17 | 1970-01-27 | Texas Instruments Inc | Method of doping semiconductor material |
| US3484311A (en) * | 1966-06-21 | 1969-12-16 | Union Carbide Corp | Silicon deposition process |
| FR2133498B1 (US20080293856A1-20081127-C00150.png) * | 1971-04-15 | 1977-06-03 | Labo Electronique Physique | |
| US3930908A (en) * | 1974-09-30 | 1976-01-06 | Rca Corporation | Accurate control during vapor phase epitaxy |
| US4171995A (en) * | 1975-10-20 | 1979-10-23 | Semiconductor Research Foundation | Epitaxial deposition process for producing an electrostatic induction type thyristor |
| US4190470A (en) * | 1978-11-06 | 1980-02-26 | M/A Com, Inc. | Production of epitaxial layers by vapor deposition utilizing dynamically adjusted flow rates and gas phase concentrations |
| US4422888A (en) * | 1981-02-27 | 1983-12-27 | Xerox Corporation | Method for successfully depositing doped II-VI epitaxial layers by organometallic chemical vapor deposition |
| JPS63285923A (ja) * | 1987-05-19 | 1988-11-22 | Komatsu Denshi Kinzoku Kk | シリコン−ゲルマニウム合金の製造方法 |
| WO2000004357A1 (en) * | 1998-07-15 | 2000-01-27 | Smithsonian Astrophysical Observatory | Epitaxial germanium temperature sensor |
| US7066194B2 (en) * | 2002-07-19 | 2006-06-27 | Applied Materials, Inc. | Valve design and configuration for fast delivery system |
| US9577079B2 (en) | 2009-12-17 | 2017-02-21 | Infineon Technologies Ag | Tunnel field effect transistors |
| US8728239B2 (en) * | 2011-07-29 | 2014-05-20 | Asm America, Inc. | Methods and apparatus for a gas panel with constant gas flow |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA598322A (en) * | 1960-05-17 | The Plessey Company Limited | Manufacture of semi-conductor materials with additives | |
| DE883784C (de) * | 1949-04-06 | 1953-06-03 | Sueddeutsche App Fabrik G M B | Verfahren zur Herstellung von Flaechengleichrichtern und Kristallverstaerkerschichten aus Elementen |
| BE509317A (US20080293856A1-20081127-C00150.png) * | 1951-03-07 | 1900-01-01 | ||
| DE885756C (de) * | 1951-10-08 | 1953-06-25 | Telefunken Gmbh | Verfahren zur Herstellung von p- oder n-leitenden Schichten |
| NL98697C (US20080293856A1-20081127-C00150.png) * | 1952-08-20 | |||
| GB778383A (en) * | 1953-10-02 | 1957-07-03 | Standard Telephones Cables Ltd | Improvements in or relating to the production of material for semi-conductors |
| NL218408A (US20080293856A1-20081127-C00150.png) * | 1954-05-18 | 1900-01-01 | ||
| US2895858A (en) * | 1955-06-21 | 1959-07-21 | Hughes Aircraft Co | Method of producing semiconductor crystal bodies |
| DE1029941B (de) * | 1955-07-13 | 1958-05-14 | Siemens Ag | Verfahren zur Herstellung von einkristallinen Halbleiterschichten |
| DE1048638B (de) * | 1957-07-02 | 1959-01-15 | Siemens &. Halske Aktiengesellschaft, Berlin und München | Verfahren zur Herstellung von Halbleitereinkristallen, insbesondere von Silizium durch thermische Zersetzung oder Reduktion |
| US2955966A (en) * | 1957-07-03 | 1960-10-11 | Int Standard Electric Corp | Manufacture of semiconductor material |
-
0
- NL NL288035D patent/NL288035A/xx unknown
-
1962
- 1962-01-24 US US168425A patent/US3173814A/en not_active Expired - Lifetime
-
1963
- 1963-01-23 GB GB2887/63A patent/GB997997A/en not_active Expired
- 1963-01-24 DE DEM55535A patent/DE1288571B/de active Pending
-
1972
- 1972-09-06 JP JP47089478A patent/JPS5112988B1/ja active Pending
- 1972-09-06 JP JP47089477A patent/JPS4924542B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE1288571B (de) | 1969-02-06 |
| GB997997A (en) | 1965-07-14 |
| JPS5112988B1 (US20080293856A1-20081127-C00150.png) | 1976-04-23 |
| US3173814A (en) | 1965-03-16 |
| JPS4924542B1 (US20080293856A1-20081127-C00150.png) | 1974-06-24 |
