NL277330A - - Google Patents

Info

Publication number
NL277330A
NL277330A NL277330DA NL277330A NL 277330 A NL277330 A NL 277330A NL 277330D A NL277330D A NL 277330DA NL 277330 A NL277330 A NL 277330A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL277330A publication Critical patent/NL277330A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/0262Reduction or decomposition of gaseous compounds, e.g. CVD
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02524Group 14 semiconducting materials
    • H01L21/02532Silicon, silicon germanium, germanium

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Chemical Vapour Deposition (AREA)
NL277330D 1961-04-22 NL277330A (en:Method)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES73615A DE1239669B (de) 1961-04-22 1961-04-22 Verfahren zum Herstellen extrem planer Halbleiterflaechen
DES0074875 1961-07-18

Publications (1)

Publication Number Publication Date
NL277330A true NL277330A (en:Method)

Family

ID=25996418

Family Applications (1)

Application Number Title Priority Date Filing Date
NL277330D NL277330A (en:Method) 1961-04-22

Country Status (6)

Country Link
US (1) US3200001A (en:Method)
BE (1) BE616590A (en:Method)
CH (1) CH395347A (en:Method)
DE (1) DE1239669B (en:Method)
GB (1) GB1002697A (en:Method)
NL (1) NL277330A (en:Method)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3325314A (en) * 1961-10-27 1967-06-13 Siemens Ag Semi-conductor product and method for making same
US3379584A (en) * 1964-09-04 1968-04-23 Texas Instruments Inc Semiconductor wafer with at least one epitaxial layer and methods of making same
US3447902A (en) * 1966-04-04 1969-06-03 Motorola Inc Single crystal silicon rods
US3585464A (en) * 1967-10-19 1971-06-15 Ibm Semiconductor device fabrication utilizing {21 100{22 {0 oriented substrate material
NL171309C (nl) * 1970-03-02 1983-03-01 Hitachi Ltd Werkwijze voor de vervaardiging van een halfgeleiderlichaam, waarbij een laag van siliciumdioxyde wordt gevormd op een oppervlak van een monokristallijn lichaam van silicium.
JP3444327B2 (ja) * 1996-03-04 2003-09-08 信越半導体株式会社 シリコン単結晶薄膜の製造方法
DE102010040836A1 (de) * 2010-09-15 2012-03-15 Wacker Chemie Ag Verfahren zur Herstellung von Silicium-Dünnstäben

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL130620C (en:Method) * 1954-05-18 1900-01-01
DE1061745B (de) * 1957-11-28 1959-07-23 Siemens Ag Verfahren und Vorrichtung zum Ausrichten eines Keimkristalls beim Ziehen von Einkristallen
DE1150366B (de) * 1958-12-09 1963-06-20 Siemens Ag Verfahren zur Herstellung von Reinstsilicium
US2930722A (en) * 1959-02-03 1960-03-29 Bell Telephone Labor Inc Method of treating silicon
NL262949A (en:Method) * 1960-04-02 1900-01-01

Also Published As

Publication number Publication date
DE1239669B (de) 1967-05-03
CH395347A (de) 1965-07-15
GB1002697A (en) 1965-08-25
US3200001A (en) 1965-08-10
BE616590A (fr) 1962-10-18

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