NL251064A - - Google Patents
Info
- Publication number
- NL251064A NL251064A NL251064DA NL251064A NL 251064 A NL251064 A NL 251064A NL 251064D A NL251064D A NL 251064DA NL 251064 A NL251064 A NL 251064A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/043—Dual dielectric
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/167—Two diffusions in one hole
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US544897A US2858489A (en) | 1955-11-04 | 1955-11-04 | Power transistor |
| US810388A US3025589A (en) | 1955-11-04 | 1959-05-01 | Method of manufacturing semiconductor devices |
| US30256A US3064167A (en) | 1955-11-04 | 1960-05-19 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL251064A true NL251064A (ja) |
Family
ID=27363619
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL251064D NL251064A (ja) | 1955-11-04 | ||
| NL121810D NL121810C (ja) | 1955-11-04 | ||
| NL6605653A NL6605653A (ja) | 1955-11-04 | 1966-04-27 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL121810D NL121810C (ja) | 1955-11-04 | ||
| NL6605653A NL6605653A (ja) | 1955-11-04 | 1966-04-27 |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US2858489A (ja) |
| CH (3) | CH399604A (ja) |
| DE (1) | DE1197548C2 (ja) |
| GB (2) | GB843409A (ja) |
| NL (3) | NL6605653A (ja) |
Families Citing this family (104)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2980830A (en) * | 1956-08-22 | 1961-04-18 | Shockley William | Junction transistor |
| NL276978A (ja) * | 1956-09-05 | |||
| US2967985A (en) * | 1957-04-11 | 1961-01-10 | Shockley | Transistor structure |
| BE531769A (ja) * | 1957-08-07 | 1900-01-01 | ||
| GB945742A (ja) * | 1959-02-06 | Texas Instruments Inc | ||
| GB958249A (en) * | 1959-05-06 | 1964-05-21 | Texas Instruments Inc | Semiconductor circuits |
| NL252131A (ja) * | 1959-06-30 | |||
| US3117260A (en) * | 1959-09-11 | 1964-01-07 | Fairchild Camera Instr Co | Semiconductor circuit complexes |
| NL257516A (ja) * | 1959-11-25 | |||
| US3234440A (en) * | 1959-12-30 | 1966-02-08 | Ibm | Semiconductor device fabrication |
| NL265382A (ja) * | 1960-03-08 | |||
| NL269092A (ja) * | 1960-09-09 | 1900-01-01 | ||
| US3278811A (en) * | 1960-10-04 | 1966-10-11 | Hayakawa Denki Kogyo Kabushiki | Radiation energy transducing device |
| US3193418A (en) * | 1960-10-27 | 1965-07-06 | Fairchild Camera Instr Co | Semiconductor device fabrication |
| US3189798A (en) * | 1960-11-29 | 1965-06-15 | Westinghouse Electric Corp | Monolithic semiconductor device and method of preparing same |
| US3151004A (en) * | 1961-03-30 | 1964-09-29 | Rca Corp | Semiconductor devices |
| US3166448A (en) * | 1961-04-07 | 1965-01-19 | Clevite Corp | Method for producing rib transistor |
| NL274830A (ja) * | 1961-04-12 | |||
| GB967002A (en) * | 1961-05-05 | 1964-08-19 | Standard Telephones Cables Ltd | Improvements in or relating to semiconductor devices |
| US3227933A (en) * | 1961-05-17 | 1966-01-04 | Fairchild Camera Instr Co | Diode and contact structure |
| US3177414A (en) * | 1961-07-26 | 1965-04-06 | Nippon Electric Co | Device comprising a plurality of transistors |
| US3233305A (en) * | 1961-09-26 | 1966-02-08 | Ibm | Switching transistors with controlled emitter-base breakdown |
| US3197681A (en) * | 1961-09-29 | 1965-07-27 | Texas Instruments Inc | Semiconductor devices with heavily doped region to prevent surface inversion |
| US3330030A (en) * | 1961-09-29 | 1967-07-11 | Texas Instruments Inc | Method of making semiconductor devices |
| US3189973A (en) * | 1961-11-27 | 1965-06-22 | Bell Telephone Labor Inc | Method of fabricating a semiconductor device |
| DE1639051C2 (de) * | 1961-12-01 | 1981-07-02 | Western Electric Co., Inc., 10038 New York, N.Y. | Verfahren zum Herstellen eines ohmschen Kontakts an einem Silicium-Halbleiterkörper |
| NL286507A (ja) * | 1961-12-11 | |||
| US3184657A (en) * | 1962-01-05 | 1965-05-18 | Fairchild Camera Instr Co | Nested region transistor configuration |
| US3200019A (en) * | 1962-01-19 | 1965-08-10 | Rca Corp | Method for making a semiconductor device |
| DE1444521B2 (de) * | 1962-02-01 | 1971-02-25 | Siemens AG, 1000 Berlin u 8000 München | Verfahren zur herstellung einer halbleiteranordnung |
| US3265542A (en) * | 1962-03-15 | 1966-08-09 | Philco Corp | Semiconductor device and method for the fabrication thereof |
| DE1287696B (ja) * | 1962-04-16 | 1969-01-23 | ||
| US3212160A (en) * | 1962-05-18 | 1965-10-19 | Transitron Electronic Corp | Method of manufacturing semiconductive devices |
| US3260115A (en) * | 1962-05-18 | 1966-07-12 | Bell Telephone Labor Inc | Temperature sensitive element |
| US3266137A (en) * | 1962-06-07 | 1966-08-16 | Hughes Aircraft Co | Metal ball connection to crystals |
| US3183576A (en) * | 1962-06-26 | 1965-05-18 | Ibm | Method of making transistor structures |
| NL294675A (ja) * | 1962-06-29 | |||
| US3255005A (en) * | 1962-06-29 | 1966-06-07 | Tung Sol Electric Inc | Masking process for semiconductor elements |
| US3206827A (en) * | 1962-07-06 | 1965-09-21 | Gen Instrument Corp | Method of producing a semiconductor device |
| US3296040A (en) * | 1962-08-17 | 1967-01-03 | Fairchild Camera Instr Co | Epitaxially growing layers of semiconductor through openings in oxide mask |
| BE636316A (ja) * | 1962-08-23 | 1900-01-01 | ||
| US3204321A (en) * | 1962-09-24 | 1965-09-07 | Philco Corp | Method of fabricating passivated mesa transistor without contamination of junctions |
| US3271640A (en) * | 1962-10-11 | 1966-09-06 | Fairchild Camera Instr Co | Semiconductor tetrode |
| US3245794A (en) * | 1962-10-29 | 1966-04-12 | Ihilco Corp | Sequential registration scheme |
| NL299208A (ja) * | 1962-10-30 | |||
| US3271201A (en) * | 1962-10-30 | 1966-09-06 | Itt | Planar semiconductor devices |
| US3373324A (en) * | 1962-12-05 | 1968-03-12 | Motorola Inc | Semiconductor device with automatic gain control |
| US3362858A (en) * | 1963-01-04 | 1968-01-09 | Westinghouse Electric Corp | Fabrication of semiconductor controlled rectifiers |
| US3275910A (en) * | 1963-01-18 | 1966-09-27 | Motorola Inc | Planar transistor with a relative higher-resistivity base region |
| NL303035A (ja) * | 1963-02-06 | 1900-01-01 | ||
| US3205798A (en) * | 1963-03-29 | 1965-09-14 | Polaroid Corp | Shutter timing apparatus and method |
| US3246214A (en) * | 1963-04-22 | 1966-04-12 | Siliconix Inc | Horizontally aligned junction transistor structure |
| US3328214A (en) * | 1963-04-22 | 1967-06-27 | Siliconix Inc | Process for manufacturing horizontal transistor structure |
| GB1054331A (ja) * | 1963-05-16 | |||
| US3291658A (en) * | 1963-06-28 | 1966-12-13 | Ibm | Process of making tunnel diodes that results in a peak current that is maintained over a long period of time |
| US3279963A (en) * | 1963-07-23 | 1966-10-18 | Ibm | Fabrication of semiconductor devices |
| US3354364A (en) * | 1963-08-22 | 1967-11-21 | Nippon Electric Co | Discontinuous resistance semiconductor device |
| US3206339A (en) * | 1963-09-30 | 1965-09-14 | Philco Corp | Method of growing geometricallydefined epitaxial layer without formation of undesirable crystallites |
| DE1229650B (de) * | 1963-09-30 | 1966-12-01 | Siemens Ag | Verfahren zum Herstellen eines Halbleiter-bauelementes mit pn-UEbergang nach der Planar-Diffusionstechnik |
| DE1228343B (de) * | 1963-10-22 | 1966-11-10 | Siemens Ag | Steuerbare Halbleiterdiode mit stellenweise negativer Strom-Spannungs-Kennlinie |
| US3312881A (en) * | 1963-11-08 | 1967-04-04 | Ibm | Transistor with limited area basecollector junction |
| DE1250790B (de) * | 1963-12-13 | 1967-09-28 | N.V. Philips' Gloeilampenfabrieken, Eindhoven (Niederlande) | Verfahren zur Herstellung diffundierter Zonen von Verunreinigungen in einem Halbleiterkörper |
| NL134170C (ja) * | 1963-12-17 | 1900-01-01 | ||
| US3504239A (en) * | 1964-01-31 | 1970-03-31 | Rca Corp | Transistor with distributed resistor between emitter lead and emitter region |
| GB993388A (en) * | 1964-02-05 | 1965-05-26 | Standard Telephones Cables Ltd | Improvements in or relating to semiconductor devices |
| US3298879A (en) * | 1964-03-23 | 1967-01-17 | Rca Corp | Method of fabricating a semiconductor by masking |
| NL6504750A (ja) * | 1964-04-15 | 1965-10-18 | ||
| US3290570A (en) * | 1964-04-28 | 1966-12-06 | Texas Instruments Inc | Multilevel expanded metallic contacts for semiconductor devices |
| US3409483A (en) * | 1964-05-01 | 1968-11-05 | Texas Instruments Inc | Selective deposition of semiconductor materials |
| US3363151A (en) * | 1964-07-09 | 1968-01-09 | Transitron Electronic Corp | Means for forming planar junctions and devices |
| US3364399A (en) * | 1964-07-15 | 1968-01-16 | Irc Inc | Array of transistors having a layer of soft metal film for dividing |
| US3492546A (en) * | 1964-07-27 | 1970-01-27 | Raytheon Co | Contact for semiconductor device |
| DE1261480B (de) * | 1964-09-17 | 1968-02-22 | Telefunken Patent | Verfahren zur Erzeugung einer elektrisch isolierenden Schicht auf einem Halbleiterkoerper |
| US3310442A (en) * | 1964-10-16 | 1967-03-21 | Siemens Ag | Method of producing semiconductors by diffusion |
| US3341380A (en) * | 1964-12-28 | 1967-09-12 | Gen Electric | Method of producing semiconductor devices |
| US3409482A (en) * | 1964-12-30 | 1968-11-05 | Sprague Electric Co | Method of making a transistor with a very thin diffused base and an epitaxially grown emitter |
| USB422695I5 (ja) * | 1964-12-31 | 1900-01-01 | ||
| GB1124762A (en) * | 1965-01-08 | 1968-08-21 | Lucas Industries Ltd | Semi-conductor devices |
| US3391023A (en) * | 1965-03-29 | 1968-07-02 | Fairchild Camera Instr Co | Dielecteric isolation process |
| US3313661A (en) * | 1965-05-14 | 1967-04-11 | Dickson Electronics Corp | Treating of surfaces of semiconductor elements |
| DE1264619C2 (de) * | 1965-06-18 | 1968-10-10 | Siemens Ag | Verfahren zum Herstellen einer Halbleiteranordnung, insbesondere aus Silizium, einer Silizium-Germanium-Legierung oder aus Siliziumkarbid |
| US3667115A (en) * | 1965-06-30 | 1972-06-06 | Ibm | Fabrication of semiconductor devices with cup-shaped regions |
| US3922706A (en) * | 1965-07-31 | 1975-11-25 | Telefunken Patent | Transistor having emitter with high circumference-surface area ratio |
| GB1161782A (en) * | 1965-08-26 | 1969-08-20 | Associated Semiconductor Mft | Improvements in Semiconductor Devices. |
| US3461550A (en) * | 1965-09-22 | 1969-08-19 | Monti E Aklufi | Method of fabricating semiconductor devices |
| US3360851A (en) * | 1965-10-01 | 1968-01-02 | Bell Telephone Labor Inc | Small area semiconductor device |
| US3457631A (en) * | 1965-11-09 | 1969-07-29 | Gen Electric | Method of making a high frequency transistor structure |
| DE1283400B (de) * | 1965-11-23 | 1968-11-21 | Siemens Ag | Verfahren zum Herstellen einer Vielzahl von Siliciumplanartransistoren |
| DE1293308B (de) * | 1966-01-21 | 1969-04-24 | Siemens Ag | Transistoranordnung zur Strombegrenzung |
| US3490962A (en) * | 1966-04-25 | 1970-01-20 | Ibm | Diffusion process |
| US3504430A (en) * | 1966-06-27 | 1970-04-07 | Hitachi Ltd | Method of making semiconductor devices having insulating films |
| DE1300164B (de) * | 1967-01-26 | 1969-07-31 | Itt Ind Gmbh Deutsche | Verfahren zum Herstellen von Zenerdioden |
| US3503124A (en) * | 1967-02-08 | 1970-03-31 | Frank M Wanlass | Method of making a semiconductor device |
| US3577042A (en) * | 1967-06-19 | 1971-05-04 | Int Rectifier Corp | Gate connection for controlled rectifiers |
| DE1764759C3 (de) * | 1968-07-31 | 1983-11-10 | Telefunken Patentverwertungsgesellschaft Mbh, 6000 Frankfurt | Verfahren zum Kontaktieren einer Halbleiterzone einer Diode |
| US3639186A (en) * | 1969-02-24 | 1972-02-01 | Ibm | Process for the production of finely etched patterns |
| BE758160A (fr) * | 1969-10-31 | 1971-04-01 | Fairchild Camera Instr Co | Structure metallique a couches multiples et procede de fabrication d'une telle structure |
| US3648125A (en) * | 1971-02-02 | 1972-03-07 | Fairchild Camera Instr Co | Method of fabricating integrated circuits with oxidized isolation and the resulting structure |
| US3808475A (en) * | 1972-07-10 | 1974-04-30 | Amdahl Corp | Lsi chip construction and method |
| US3935587A (en) * | 1974-08-14 | 1976-01-27 | Westinghouse Electric Corporation | High power, high frequency bipolar transistor with alloyed gold electrodes |
| JPS5193874A (en) * | 1975-02-15 | 1976-08-17 | Handotaisochino seizohoho | |
| JPS5834945B2 (ja) * | 1980-06-02 | 1983-07-29 | 株式会社東芝 | ヒユ−ズ形ｐｒｏｍ半導体装置 |
| US4633092A (en) * | 1984-11-13 | 1986-12-30 | Eastman Kodak Company | Light sensing device |
| DE19600780B4 (de) * | 1996-01-11 | 2006-04-13 | Micronas Gmbh | Verfahren zum Kontaktieren von Bereichen mit verschiedener Dotierung in einem Halbleiterbauelement und Halbleiterbauelement |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2345122A (en) * | 1939-10-17 | 1944-03-28 | Herrmann Heinrich | Dry rectifier |
| NL89623C (ja) * | 1949-04-01 | |||
| US2680220A (en) * | 1950-06-09 | 1954-06-01 | Int Standard Electric Corp | Crystal diode and triode |
| BE503668A (ja) * | 1950-06-09 | |||
| US2697269A (en) * | 1950-07-24 | 1954-12-21 | Bell Telephone Labor Inc | Method of making semiconductor translating devices |
| US2695852A (en) * | 1952-02-15 | 1954-11-30 | Bell Telephone Labor Inc | Fabrication of semiconductors for signal translating devices |
| US2796562A (en) * | 1952-06-02 | 1957-06-18 | Rca Corp | Semiconductive device and method of fabricating same |
| US2713132A (en) * | 1952-10-14 | 1955-07-12 | Int Standard Electric Corp | Electric rectifying devices employing semiconductors |
| NL182212B (nl) * | 1952-10-22 | Nemag Nv | Grijper. | |
| NL178893B (nl) * | 1952-11-14 | Brevitex Ets Exploit | Bandweefgetouw met een inslagnaald voor verschillende inslagdraden. | |
| BE525280A (ja) * | 1952-12-31 | 1900-01-01 | ||
| US2748325A (en) * | 1953-04-16 | 1956-05-29 | Rca Corp | Semi-conductor devices and methods for treating same |
| US2798189A (en) * | 1953-04-16 | 1957-07-02 | Sylvania Electric Prod | Stabilized semiconductor devices |
| US2976426A (en) * | 1953-08-03 | 1961-03-21 | Rca Corp | Self-powered semiconductive device |
| NL89952C (ja) * | 1953-10-16 | 1900-01-01 | ||
| US2886748A (en) * | 1954-03-15 | 1959-05-12 | Rca Corp | Semiconductor devices |
| US2862160A (en) * | 1955-10-18 | 1958-11-25 | Hoffmann Electronics Corp | Light sensitive device and method of making the same |
| US2866140A (en) * | 1957-01-11 | 1958-12-23 | Texas Instruments Inc | Grown junction transistors |
| BE565907A (ja) * | 1957-03-22 | |||
| NL112313C (ja) * | 1957-08-07 | |||
| BE580254A (ja) * | 1958-07-17 |
-
0
- NL NL251064D patent/NL251064A/xx unknown
- NL NL121810D patent/NL121810C/xx active
-
1955
- 1955-11-04 US US544897A patent/US2858489A/en not_active Expired - Lifetime
-
1957
- 1957-12-13 GB GB38777/57A patent/GB843409A/en not_active Expired
-
1959
- 1959-05-01 US US810388A patent/US3025589A/en not_active Expired - Lifetime
-
1960
- 1960-04-26 GB GB14517/60A patent/GB947520A/en not_active Expired
- 1960-04-26 DE DE196031082 patent/DE1197548C2/de not_active Expired
- 1960-04-29 CH CH1088964A patent/CH399604A/de unknown
- 1960-04-29 CH CH1088864A patent/CH399603A/de unknown
- 1960-04-29 CH CH492460A patent/CH384082A/de unknown
- 1960-05-19 US US30256A patent/US3064167A/en not_active Expired - Lifetime
-
1966
- 1966-04-27 NL NL6605653A patent/NL6605653A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| GB843409A (en) | 1960-08-04 |
| CH399603A (de) | 1965-09-30 |
| US2858489A (en) | 1958-10-28 |
| US3064167A (en) | 1962-11-13 |
| NL121810C (ja) | |
| CH384082A (de) | 1964-11-15 |
| DE1197548C2 (de) | 1975-02-13 |
| GB947520A (en) | 1964-01-22 |
| DE1197548B (ja) | 1975-02-13 |
| US3025589A (en) | 1962-03-20 |
| CH399604A (de) | 1965-09-30 |
| NL6605653A (ja) | 1966-07-25 |