NL216353A - - Google Patents

Info

Publication number
NL216353A
NL216353A NL216353DA NL216353A NL 216353 A NL216353 A NL 216353A NL 216353D A NL216353D A NL 216353DA NL 216353 A NL216353 A NL 216353A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL216353A publication Critical patent/NL216353A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02Anodisation
    • C25D11/32Anodisation of semiconducting materials
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25FPROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00Electrolytic etching or polishing
    • C25F3/02Etching
    • C25F3/12Etching of semiconducting materials
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25FPROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00Electrolytic etching or polishing
    • C25F3/16Polishing
    • C25F3/30Polishing of semiconducting materials
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25FPROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F7/00Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47Electrolytic deposition, i.e. electroplating; Electroless plating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/60Wet etching
    • H10P50/61Electrolytic etching
    • H10P50/613Electrolytic etching of Group IV materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/40Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Die Bonding (AREA)
NL216353D 1956-06-16 NL216353A (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES49100A DE1160547B (de) 1956-06-16 1956-06-16 Verfahren zum elektrolytischen AEtzen eines Halbleiterbauelementes mit einem im wesentlichen einkristallinen Halbleiterkoerper und einem an die Oberflaeche tretenden pn-UEbergang

Publications (1)

Publication Number Publication Date
NL216353A true NL216353A (https=)

Family

ID=7487131

Family Applications (2)

Application Number Title Priority Date Filing Date
NL105600D NL105600C (https=) 1956-06-16
NL216353D NL216353A (https=) 1956-06-16

Family Applications Before (1)

Application Number Title Priority Date Filing Date
NL105600D NL105600C (https=) 1956-06-16

Country Status (6)

Country Link
US (1) US3010885A (https=)
AT (1) AT199702B (https=)
CH (1) CH374868A (https=)
DE (2) DE1160547B (https=)
NL (2) NL216353A (https=)
SE (1) SE168496C1 (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1105069B (de) * 1959-04-25 1961-04-20 Siemens Ag AEtzverfahren eines pn-UEberganges bei der Herstellung einer Halbleiteranordnung
DE1120602B (de) * 1959-08-03 1961-12-28 Siemens Ag Vorrichtung zur Durchfuehrung des anodischen Behandlungsverfahrens von Halbleiterkoerpern zur Herstellung einer elektrischen Halbleiteranordnung
DE1118363B (de) * 1960-01-20 1961-11-30 Siemens Ag Vorrichtung zum AEtzen von pn-UEbergaengen an Halbleiteranordnungen
US3284333A (en) * 1962-05-22 1966-11-08 Ionics Stable lead anodes
US3351825A (en) * 1964-12-21 1967-11-07 Solitron Devices Semiconductor device having an anodized protective film thereon and method of manufacturing same
US3377258A (en) * 1965-03-02 1968-04-09 Westinghouse Electric Corp Anodic oxidation
US3419480A (en) * 1965-03-12 1968-12-31 Westinghouse Electric Corp Anodic oxidation
US3616380A (en) * 1968-11-22 1971-10-26 Bell Telephone Labor Inc Barrier layer devices and methods for their manufacture
GB1556778A (en) * 1977-03-11 1979-11-28 Post Office Preparation of semiconductor surfaces
JPS5462929A (en) * 1977-10-28 1979-05-21 Sumitomo Electric Ind Ltd Surface treating method for aluminum and aluminum alloy
US4272351A (en) * 1978-10-27 1981-06-09 Sumitomo Electric Industries, Ltd. Apparatus for electrolytic etching
US4891103A (en) * 1988-08-23 1990-01-02 Texas Instruments Incorporated Anadization system with remote voltage sensing and active feedback control capabilities
EP0400387B1 (de) * 1989-05-31 1996-02-21 Siemens Aktiengesellschaft Verfahren zum grossflächigen elektrischen Kontaktieren eines Halbleiterkristallkörpers mit Hilfe von Elektrolyten
JP3376258B2 (ja) 1996-11-28 2003-02-10 キヤノン株式会社 陽極化成装置及びそれに関連する装置及び方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE753854C (de) * 1938-10-08 1953-08-03 Siemens & Halske A G Verfahren zur gleichzeitigen elektrolytischen Aufrauhung und/oder Formierung mehrerer Elektroden nach dem Seriensystem
NL84057C (https=) * 1948-02-26
DE823763C (de) * 1949-09-15 1951-12-06 Siemens Ag Verfahren zum elektrolytischen Polieren der Oberflaeche von Halbleiterkristallen
US2686279A (en) * 1949-09-28 1954-08-10 Rca Corp Semiconductor device
DE905329C (de) * 1950-05-24 1954-03-01 Franz Klinke Verfahren zur Herstellung von Aluminium-Offsetdruckplatten
US2656496A (en) * 1951-07-31 1953-10-20 Bell Telephone Labor Inc Semiconductor translating device
DE823470C (de) * 1950-09-12 1951-12-03 Siemens Ag Verfahren zum AEtzen eines Halbleiters
US2783197A (en) * 1952-01-25 1957-02-26 Gen Electric Method of making broad area semiconductor devices
US2669692A (en) * 1951-08-10 1954-02-16 Bell Telephone Labor Inc Method for determining electrical characteristics of semiconductive bodies
BE528756A (https=) * 1953-05-11
US2806189A (en) * 1953-07-03 1957-09-10 Sylvania Electric Prod Alkaline titanate rectifiers
US2802159A (en) * 1953-10-20 1957-08-06 Hughes Aircraft Co Junction-type semiconductor devices
US2885608A (en) * 1954-12-03 1959-05-05 Philco Corp Semiconductive device and method of manufacture

Also Published As

Publication number Publication date
DE1160547B (de) 1964-01-02
CH374868A (de) 1964-01-31
DE1221075B (de) 1966-07-14
SE168496C1 (sv) 1959-09-01
NL105600C (https=)
AT199702B (de) 1958-09-25
US3010885A (en) 1961-11-28

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