NL2017300A - Method and apparatus for measuring a parameter of a lithographic process, substrate and patterning devices for use in the method - Google Patents
Method and apparatus for measuring a parameter of a lithographic process, substrate and patterning devices for use in the method Download PDFInfo
- Publication number
- NL2017300A NL2017300A NL2017300A NL2017300A NL2017300A NL 2017300 A NL2017300 A NL 2017300A NL 2017300 A NL2017300 A NL 2017300A NL 2017300 A NL2017300 A NL 2017300A NL 2017300 A NL2017300 A NL 2017300A
- Authority
- NL
- Netherlands
- Prior art keywords
- target
- lithographic
- target structure
- substrate
- features
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 128
- 238000000059 patterning Methods 0.000 title claims description 77
- 238000000034 method Methods 0.000 title abstract description 142
- 230000008569 process Effects 0.000 title abstract description 82
- 230000005855 radiation Effects 0.000 claims description 65
- 238000001459 lithography Methods 0.000 claims description 10
- 238000001228 spectrum Methods 0.000 abstract description 96
- 238000005259 measurement Methods 0.000 abstract description 63
- 230000000737 periodic effect Effects 0.000 abstract description 30
- 239000000463 material Substances 0.000 abstract description 24
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- 238000005137 deposition process Methods 0.000 description 3
- 230000005670 electromagnetic radiation Effects 0.000 description 3
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- 238000011835 investigation Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
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- 238000012876 topography Methods 0.000 description 2
- 108010001267 Protein Subunits Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
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- 239000006227 byproduct Substances 0.000 description 1
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70681—Metrology strategies
- G03F7/70683—Mark designs
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706843—Metrology apparatus
- G03F7/706847—Production of measurement radiation, e.g. synchrotron, free-electron laser, plasma source or higher harmonic generation [HHG]
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562210938P | 2015-08-27 | 2015-08-27 | |
| US201662301880P | 2016-03-01 | 2016-03-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL2017300A true NL2017300A (en) | 2017-03-01 |
Family
ID=56802477
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL2017300A NL2017300A (en) | 2015-08-27 | 2016-08-09 | Method and apparatus for measuring a parameter of a lithographic process, substrate and patterning devices for use in the method |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US10481503B2 (zh) |
| JP (1) | JP6740338B2 (zh) |
| KR (2) | KR102109060B1 (zh) |
| CN (1) | CN107924140B (zh) |
| IL (1) | IL257395B (zh) |
| NL (1) | NL2017300A (zh) |
| TW (1) | TWI631429B (zh) |
| WO (1) | WO2017032736A1 (zh) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL2011816A (en) * | 2012-11-30 | 2014-06-04 | Asml Netherlands Bv | Method of determining dose and focus, inspection apparatus, patterning device, substrate and device manufacturing method. |
| WO2016000914A1 (en) | 2014-06-30 | 2016-01-07 | Asml Netherlands B.V. | Method of determining dose, inspection apparatus, patterning device, substrate and device manufacturing method |
| NL2017300A (en) | 2015-08-27 | 2017-03-01 | Asml Netherlands Bv | Method and apparatus for measuring a parameter of a lithographic process, substrate and patterning devices for use in the method |
| US10579768B2 (en) * | 2016-04-04 | 2020-03-03 | Kla-Tencor Corporation | Process compatibility improvement by fill factor modulation |
| EP3318927A1 (en) | 2016-11-04 | 2018-05-09 | ASML Netherlands B.V. | Method and apparatus for measuring a parameter of a lithographic process, computer program products for implementing such methods & apparatus |
| EP3321738A1 (en) * | 2016-11-10 | 2018-05-16 | ASML Netherlands B.V. | Method of measuring a parameter of a device manufacturing process, metrology apparatus, substrate, target, device manufacturing system, and device manufacturing method |
| EP3336605A1 (en) * | 2016-12-15 | 2018-06-20 | ASML Netherlands B.V. | Method of measuring a structure, inspection apparatus, lithographic system and device manufacturing method |
| WO2019038054A1 (en) * | 2017-08-23 | 2019-02-28 | Asml Netherlands B.V. | METHOD FOR DETERMINING A PARAMETER OF A PATTERN TRANSFER PROCESS, DEVICE MANUFACTURING METHOD |
| JP6788559B2 (ja) * | 2017-09-04 | 2020-11-25 | キヤノン株式会社 | パターン形成方法、リソグラフィ装置、および物品製造方法 |
| EP3454126A1 (en) * | 2017-09-08 | 2019-03-13 | ASML Netherlands B.V. | Method for estimating overlay |
| EP3470926A1 (en) * | 2017-10-16 | 2019-04-17 | ASML Netherlands B.V. | Metrology apparatus, lithographic system, and method of measuring a structure |
| EP3499311A1 (en) * | 2017-12-14 | 2019-06-19 | ASML Netherlands B.V. | Method for controlling a manufacturing apparatus and associated aparatuses |
| EP3557327A1 (en) | 2018-04-18 | 2019-10-23 | ASML Netherlands B.V. | Method of determining a value of a parameter of interest of a target formed by a patterning process |
| EP3575874A1 (en) * | 2018-05-29 | 2019-12-04 | ASML Netherlands B.V. | Metrology method, apparatus and computer program |
| EP3640735A1 (en) * | 2018-10-18 | 2020-04-22 | ASML Netherlands B.V. | Methods and apparatus for inspection of a structure and associated apparatuses |
| EP3657257A1 (en) * | 2018-11-26 | 2020-05-27 | ASML Netherlands B.V. | Method for of measuring a focus parameter relating to a structure formed using a lithographic process |
| TWI746320B (zh) | 2020-12-18 | 2021-11-11 | 財團法人工業技術研究院 | 產生及更新定位分布圖的方法及其系統 |
| JP2023000112A (ja) | 2021-06-17 | 2023-01-04 | キオクシア株式会社 | 計測装置および計測プログラム |
| EP4167031A1 (en) * | 2021-10-18 | 2023-04-19 | ASML Netherlands B.V. | Method of determining a measurement recipe in a metrology method |
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| US7541201B2 (en) | 2000-08-30 | 2009-06-02 | Kla-Tencor Technologies Corporation | Apparatus and methods for determining overlay of structures having rotational or mirror symmetry |
| JP2005505929A (ja) * | 2001-10-10 | 2005-02-24 | アクセント オプティカル テクノロジーズ，インク． | 断面解析による焦点中心の決定 |
| US6772084B2 (en) | 2002-01-31 | 2004-08-03 | Timbre Technologies, Inc. | Overlay measurements using periodic gratings |
| US6804005B2 (en) | 2002-05-02 | 2004-10-12 | Timbre Technologies, Inc. | Overlay measurements using zero-order cross polarization measurements |
| US7440105B2 (en) * | 2002-12-05 | 2008-10-21 | Kla-Tencor Technologies Corporation | Continuously varying offset mark and methods of determining overlay |
| US7791727B2 (en) * | 2004-08-16 | 2010-09-07 | Asml Netherlands B.V. | Method and apparatus for angular-resolved spectroscopic lithography characterization |
| US7844131B2 (en) * | 2006-08-24 | 2010-11-30 | Asml Netherlands B.V. | Lithographic apparatus, a device manufacturing method and a device manufactured thereby |
| US7911612B2 (en) * | 2007-06-13 | 2011-03-22 | Asml Netherlands B.V. | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method |
| US7460237B1 (en) * | 2007-08-02 | 2008-12-02 | Asml Netherlands B.V. | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method |
| DE102007046850B4 (de) | 2007-09-29 | 2014-05-22 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Verfahren zum Bestimmen einer Überlagerungsgenauigkeit |
| IL194839A0 (en) * | 2007-10-25 | 2009-08-03 | Asml Netherlands Bv | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method |
| NL1036123A1 (nl) * | 2007-11-13 | 2009-05-14 | Asml Netherlands Bv | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method. |
| NL1036245A1 (nl) | 2007-12-17 | 2009-06-18 | Asml Netherlands Bv | Diffraction based overlay metrology tool and method of diffraction based overlay metrology. |
| NL1036459A1 (nl) | 2008-02-13 | 2009-08-14 | Asml Netherlands Bv | Method and apparatus for angular-resolved spectroscopic lithography characterization. |
| NL1036597A1 (nl) | 2008-02-29 | 2009-09-01 | Asml Netherlands Bv | Metrology method and apparatus, lithographic apparatus, and device manufacturing method. |
| US8823922B2 (en) | 2008-06-26 | 2014-09-02 | Asml Netherlands B.V. | Overlay measurement apparatus, lithographic apparatus and device manufacturing method using such overlay measurement apparatus |
| DE102008042356A1 (de) | 2008-09-25 | 2010-04-08 | Carl Zeiss Smt Ag | Projektionsbelichtungsanlage mit optimierter Justagemöglichkeit |
| US8502955B2 (en) * | 2008-12-30 | 2013-08-06 | Asml Netherlands B.V. | Method of determining a characteristic |
| NL2004094A (en) | 2009-02-11 | 2010-08-12 | Asml Netherlands Bv | Inspection apparatus, lithographic apparatus, lithographic processing cell and inspection method. |
| WO2011011511A1 (en) | 2009-07-22 | 2011-01-27 | Kla-Tencor Corporation | Angle-resolved antisymmetric scatterometry |
| KR101461457B1 (ko) | 2009-07-31 | 2014-11-13 | 에이에스엠엘 네델란즈 비.브이. | 계측 방법 및 장치, 리소그래피 시스템, 및 리소그래피 처리 셀 |
| CN102483582B (zh) | 2009-08-24 | 2016-01-20 | Asml荷兰有限公司 | 量测方法和设备、光刻设备、光刻处理单元和包括量测目标的衬底 |
| NL2006700A (en) | 2010-06-04 | 2011-12-06 | Asml Netherlands Bv | Method and apparatus for measuring a structure on a substrate, computer program products for implementing such methods & apparatus. |
| WO2012062501A1 (en) | 2010-11-12 | 2012-05-18 | Asml Netherlands B.V. | Metrology method and apparatus, and device manufacturing method |
| WO2012062858A1 (en) * | 2010-11-12 | 2012-05-18 | Asml Netherlands B.V. | Metrology method and apparatus, lithographic system and device manufacturing method |
| US11372340B2 (en) | 2011-04-06 | 2022-06-28 | Kla Corporation | Method and system for providing a quality metric for improved process control |
| DE112012003799T5 (de) | 2011-09-13 | 2014-06-12 | Isaberg Rapid Ab | Gelenkanordnung in einem Heftgerät |
| WO2013079270A1 (en) | 2011-11-30 | 2013-06-06 | Asml Netherlands B.V. | Inspection method and apparatus, and corresponding lithographic apparatus |
| NL2010401A (en) * | 2012-03-27 | 2013-09-30 | Asml Netherlands Bv | Metrology method and apparatus, lithographic system and device manufacturing method. |
| KR101759608B1 (ko) * | 2012-05-29 | 2017-07-20 | 에이에스엠엘 네델란즈 비.브이. | 메트롤로지 방법 및 장치, 기판, 리소그래피 시스템 및 디바이스 제조 방법 |
| US10013518B2 (en) | 2012-07-10 | 2018-07-03 | Kla-Tencor Corporation | Model building and analysis engine for combined X-ray and optical metrology |
| WO2014062972A1 (en) | 2012-10-18 | 2014-04-24 | Kla-Tencor Corporation | Symmetric target design in scatterometry overlay metrology |
| TWI603216B (zh) * | 2012-11-21 | 2017-10-21 | 克萊譚克公司 | 處理相容分段目標及設計方法 |
| WO2015009619A1 (en) | 2013-07-15 | 2015-01-22 | Kla-Tencor Corporation | Producing resist layers using fine segmentation |
| US8918746B1 (en) * | 2013-09-04 | 2014-12-23 | Globalfoundries Inc. | Cut mask aware contact enclosure rule for grating and cut patterning solution |
| KR101855220B1 (ko) | 2013-10-30 | 2018-05-08 | 에이에스엠엘 네델란즈 비.브이. | 검사 장치 및 방법, 계측 타겟을 가지는 기판, 리소그래피 시스템, 및 디바이스 제조 방법 |
| CN105900015B (zh) | 2013-11-26 | 2019-07-05 | Asml荷兰有限公司 | 用于光刻度量的方法、设备和衬底 |
| CN105900016B (zh) | 2013-12-05 | 2018-02-13 | Asml荷兰有限公司 | 用于测量衬底上的结构的方法和设备、用于误差校正的模型、用于实施这样的方法和设备的计算机程序产品 |
| NL2013837A (en) | 2013-12-19 | 2015-06-22 | Asml Netherlands Bv | Inspection methods, substrates having metrology targets, lithographic system and device manufacturing method. |
| JP6567523B2 (ja) | 2013-12-30 | 2019-08-28 | エーエスエムエル ネザーランズ ビー．ブイ． | メトロロジーターゲットの設計のための方法及び装置 |
| CN106463350B (zh) * | 2014-06-13 | 2019-12-20 | 英特尔公司 | 通过选择性削减规则网格的垂直沟道晶体管制造工艺 |
| WO2016078862A1 (en) | 2014-11-21 | 2016-05-26 | Asml Netherlands B.V. | Metrology method and apparatus |
| CN110553602B (zh) * | 2014-11-26 | 2021-10-26 | Asml荷兰有限公司 | 度量方法、计算机产品和系统 |
| US10838309B2 (en) | 2015-02-23 | 2020-11-17 | Asml Netherlands B.V. | Device manufacturing method and patterning devices for use in device manufacturing method |
| NL2017300A (en) | 2015-08-27 | 2017-03-01 | Asml Netherlands Bv | Method and apparatus for measuring a parameter of a lithographic process, substrate and patterning devices for use in the method |
| US10615084B2 (en) | 2016-03-01 | 2020-04-07 | Asml Netherlands B.V. | Method and apparatus to determine a patterning process parameter, associated with a change in a physical configuration, using measured pixel optical characteristic values |
| US9735029B1 (en) * | 2016-09-22 | 2017-08-15 | International Business Machines Corporation | Metal fill optimization for self-aligned double patterning |
-
2016
- 2016-08-09 NL NL2017300A patent/NL2017300A/en unknown
- 2016-08-15 US US15/237,246 patent/US10481503B2/en active Active
- 2016-08-22 JP JP2018507730A patent/JP6740338B2/ja active Active
- 2016-08-22 KR KR1020187008543A patent/KR102109060B1/ko active IP Right Grant
- 2016-08-22 KR KR1020207012771A patent/KR102399698B1/ko active IP Right Grant
- 2016-08-22 WO PCT/EP2016/069790 patent/WO2017032736A1/en active Application Filing
- 2016-08-22 CN CN201680049910.6A patent/CN107924140B/zh active Active
- 2016-08-24 TW TW105127027A patent/TWI631429B/zh active
-
2018
- 2018-02-07 IL IL257395A patent/IL257395B/en unknown
-
2019
- 2019-11-06 US US16/675,674 patent/US11092900B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| TWI631429B (zh) | 2018-08-01 |
| CN107924140B (zh) | 2021-06-18 |
| US10481503B2 (en) | 2019-11-19 |
| JP2018526674A (ja) | 2018-09-13 |
| US11092900B2 (en) | 2021-08-17 |
| KR102109060B1 (ko) | 2020-05-12 |
| IL257395A (en) | 2018-04-30 |
| IL257395B (en) | 2022-05-01 |
| KR102399698B1 (ko) | 2022-05-18 |
| KR20200051839A (ko) | 2020-05-13 |
| JP6740338B2 (ja) | 2020-08-12 |
| TW201730683A (zh) | 2017-09-01 |
| WO2017032736A1 (en) | 2017-03-02 |
| US20170059999A1 (en) | 2017-03-02 |
| KR20180042402A (ko) | 2018-04-25 |
| CN107924140A (zh) | 2018-04-17 |
| US20200073254A1 (en) | 2020-03-05 |
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