NL2004820A - Lithographic apparatus and a method of measuring flow rate in a two phase flow. - Google Patents
Lithographic apparatus and a method of measuring flow rate in a two phase flow. Download PDFInfo
- Publication number
- NL2004820A NL2004820A NL2004820A NL2004820A NL2004820A NL 2004820 A NL2004820 A NL 2004820A NL 2004820 A NL2004820 A NL 2004820A NL 2004820 A NL2004820 A NL 2004820A NL 2004820 A NL2004820 A NL 2004820A
- Authority
- NL
- Netherlands
- Prior art keywords
- liquid
- flow
- substrate
- gas
- flow rate
- Prior art date
Links
- 230000005514 two-phase flow Effects 0.000 title description 43
- 238000000034 method Methods 0.000 title description 17
- 239000000758 substrate Substances 0.000 claims description 181
- 230000005855 radiation Effects 0.000 claims description 35
- 238000000059 patterning Methods 0.000 claims description 29
- 238000001459 lithography Methods 0.000 claims description 3
- 239000007788 liquid Substances 0.000 description 267
- 239000012530 fluid Substances 0.000 description 128
- 239000007789 gas Substances 0.000 description 119
- 238000007654 immersion Methods 0.000 description 43
- 238000000605 extraction Methods 0.000 description 25
- 238000000926 separation method Methods 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 11
- 230000001419 dependent effect Effects 0.000 description 10
- 238000004590 computer program Methods 0.000 description 6
- 230000005499 meniscus Effects 0.000 description 6
- 239000011148 porous material Substances 0.000 description 6
- 230000003247 decreasing effect Effects 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 239000012071 phase Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 3
- 238000013500 data storage Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 238000000671 immersion lithography Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 230000002209 hydrophobic effect Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000000246 remedial effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70991—Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Health & Medical Sciences (AREA)
- Computer Networks & Wireless Communication (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US21365709P | 2009-06-30 | 2009-06-30 | |
| US21365709 | 2009-06-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL2004820A true NL2004820A (en) | 2011-01-04 |
Family
ID=43453665
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL2004820A NL2004820A (en) | 2009-06-30 | 2010-06-04 | Lithographic apparatus and a method of measuring flow rate in a two phase flow. |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8446561B2 (zh) |
| JP (1) | JP2011014902A (zh) |
| KR (1) | KR101128403B1 (zh) |
| CN (1) | CN101950129B (zh) |
| NL (1) | NL2004820A (zh) |
| TW (1) | TWI459151B (zh) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8229685B2 (en) * | 2009-10-30 | 2012-07-24 | Linde Aktiengesellschaft | Two-phase fluid flow measuring apparatus and process |
| NL2006054A (en) | 2010-02-09 | 2011-08-10 | Asml Netherlands Bv | Fluid handling structure, lithographic apparatus and device manufacturing method. |
| EP2381310B1 (en) | 2010-04-22 | 2015-05-06 | ASML Netherlands BV | Fluid handling structure and lithographic apparatus |
| NL2006615A (en) | 2010-05-11 | 2011-11-14 | Asml Netherlands Bv | Fluid handling structure, lithographic apparatus and device manufacturing method. |
| ITMI20110670A1 (it) * | 2011-04-19 | 2012-10-20 | Eni Spa | Apparato e metodo per la misura della portata di differenti fluidi presenti nelle correnti multifase |
| EP2515170B1 (en) * | 2011-04-20 | 2020-02-19 | ASML Netherlands BV | Thermal conditioning system for thermal conditioning a part of a lithographic apparatus and a thermal conditioning method |
| JP5963709B2 (ja) * | 2013-05-27 | 2016-08-03 | 株式会社日立製作所 | 計算機、予測方法、及び、予測プログラム |
| CN106053726A (zh) * | 2016-05-26 | 2016-10-26 | 天邦膜技术国家工程研究中心有限责任公司 | 一种便携式水溶氦气气水比测试仪 |
| US10605636B2 (en) * | 2017-08-09 | 2020-03-31 | Ckd Corporation | Flowmeter |
| CN115335773A (zh) * | 2020-04-07 | 2022-11-11 | Asml荷兰有限公司 | 差异测量系统 |
| WO2024078802A1 (en) * | 2022-10-12 | 2024-04-18 | Asml Netherlands B.V. | Substrate support qualification |
Family Cites Families (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4509852A (en) * | 1980-10-06 | 1985-04-09 | Werner Tabarelli | Apparatus for the photolithographic manufacture of integrated circuit elements |
| WO1995010028A1 (en) * | 1993-10-05 | 1995-04-13 | Atlantic Richfield Company | Multiphase flowmeter for measuring flow rates and densities |
| AU2747999A (en) | 1998-03-26 | 1999-10-18 | Nikon Corporation | Projection exposure method and system |
| SG121822A1 (en) * | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| SG121818A1 (en) * | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| EP1420300B1 (en) | 2002-11-12 | 2015-07-29 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP4492239B2 (ja) | 2003-07-28 | 2010-06-30 | 株式会社ニコン | 露光装置及びデバイス製造方法、並びに露光装置の制御方法 |
| EP2264534B1 (en) * | 2003-07-28 | 2013-07-17 | Nikon Corporation | Exposure apparatus, method for producing device, and method for controlling exposure apparatus |
| CN106707699B (zh) | 2003-07-28 | 2018-11-13 | 株式会社尼康 | 曝光装置、器件制造方法 |
| JP4492600B2 (ja) | 2003-07-28 | 2010-06-30 | 株式会社ニコン | 露光装置及び露光方法、並びにデバイス製造方法 |
| US7394521B2 (en) | 2003-12-23 | 2008-07-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP4954444B2 (ja) | 2003-12-26 | 2012-06-13 | 株式会社ニコン | 流路形成部材、露光装置及びデバイス製造方法 |
| US7481867B2 (en) | 2004-06-16 | 2009-01-27 | Edwards Limited | Vacuum system for immersion photolithography |
| US7701550B2 (en) * | 2004-08-19 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7379155B2 (en) * | 2004-10-18 | 2008-05-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7397533B2 (en) * | 2004-12-07 | 2008-07-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP1681597B1 (en) * | 2005-01-14 | 2010-03-10 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| KR20100096258A (ko) * | 2005-06-29 | 2010-09-01 | 마이크로 모우션, 인코포레이티드 | 다중-성분 유동 내 일 성분의 밀도 결정 방법 및 장치 |
| GB2432425B (en) * | 2005-11-22 | 2008-01-09 | Schlumberger Holdings | Isokinetic sampling method and system for multiphase flow from subterranean wells |
| KR20080085874A (ko) | 2006-01-18 | 2008-09-24 | 캐논 가부시끼가이샤 | 노광장치 |
| JP2007234821A (ja) | 2006-02-28 | 2007-09-13 | Canon Inc | 液浸露光装置及びデバイス製造方法 |
| US8634053B2 (en) * | 2006-12-07 | 2014-01-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP2009016404A (ja) | 2007-06-29 | 2009-01-22 | Canon Inc | 液体回収装置、露光装置およびデバイス製造方法 |
| US7924404B2 (en) * | 2007-08-16 | 2011-04-12 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US8421993B2 (en) * | 2008-05-08 | 2013-04-16 | Asml Netherlands B.V. | Fluid handling structure, lithographic apparatus and device manufacturing method |
| EP2131241B1 (en) * | 2008-05-08 | 2019-07-31 | ASML Netherlands B.V. | Fluid handling structure, lithographic apparatus and device manufacturing method |
| JP5097166B2 (ja) * | 2008-05-28 | 2012-12-12 | エーエスエムエル ネザーランズ ビー．ブイ． | リソグラフィ装置及び装置の動作方法 |
| NL2003226A (en) * | 2008-08-19 | 2010-03-09 | Asml Netherlands Bv | Lithographic apparatus, drying device, metrology apparatus and device manufacturing method. |
| SG159467A1 (en) * | 2008-09-02 | 2010-03-30 | Asml Netherlands Bv | Fluid handling structure, lithographic apparatus and device manufacturing method |
| NL2003820A (en) * | 2008-12-22 | 2010-06-23 | Asml Netherlands Bv | Fluid handling structure, table, lithographic apparatus, immersion lithographic apparatus, and device manufacturing methods. |
| JP6257898B2 (ja) | 2013-01-31 | 2018-01-10 | ジーイー・メディカル・システムズ・グローバル・テクノロジー・カンパニー・エルエルシー | 磁気共鳴装置およびプログラム |
-
2010
- 2010-06-04 NL NL2004820A patent/NL2004820A/en not_active Application Discontinuation
- 2010-06-22 US US12/820,448 patent/US8446561B2/en active Active
- 2010-06-23 JP JP2010142164A patent/JP2011014902A/ja active Pending
- 2010-06-25 TW TW099120917A patent/TWI459151B/zh active
- 2010-06-29 KR KR1020100062267A patent/KR101128403B1/ko active IP Right Grant
- 2010-06-30 CN CN201010222695.XA patent/CN101950129B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2011014902A (ja) | 2011-01-20 |
| US20110013159A1 (en) | 2011-01-20 |
| US8446561B2 (en) | 2013-05-21 |
| KR101128403B1 (ko) | 2012-03-23 |
| KR20110001970A (ko) | 2011-01-06 |
| TWI459151B (zh) | 2014-11-01 |
| CN101950129B (zh) | 2013-08-21 |
| CN101950129A (zh) | 2011-01-19 |
| TW201109858A (en) | 2011-03-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WDAP | Patent application withdrawn |
Effective date: 20110308 |