NL193919B - X-vormig ROM. - Google Patents

X-vormig ROM.

Info

Publication number
NL193919B
NL193919B NL9101017A NL9101017A NL193919B NL 193919 B NL193919 B NL 193919B NL 9101017 A NL9101017 A NL 9101017A NL 9101017 A NL9101017 A NL 9101017A NL 193919 B NL193919 B NL 193919B
Authority
NL
Netherlands
Prior art keywords
rom
shaped
shaped rom
Prior art date
Application number
NL9101017A
Other languages
English (en)
Other versions
NL193919C (nl
NL9101017A (nl
Inventor
Jin Hong An
Original Assignee
Gold Star Electronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gold Star Electronics filed Critical Gold Star Electronics
Publication of NL9101017A publication Critical patent/NL9101017A/nl
Publication of NL193919B publication Critical patent/NL193919B/nl
Application granted granted Critical
Publication of NL193919C publication Critical patent/NL193919C/nl

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • G11C17/123Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices comprising cells having several storage transistors connected in series
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/04Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0491Virtual ground arrays
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • G11C17/126Virtual ground arrays
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222Capacitive arrangements or effects of, or between wiring layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528Geometry or layout of the interconnection structure
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B20/00Read-only memory [ROM] devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
NL9101017A 1990-06-12 1991-06-12 X-vormig ROM. NL193919C (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019900008624A KR940002837B1 (ko) 1990-06-12 1990-06-12 롬 셀 구조
KR900008624 1990-06-12

Publications (3)

Publication Number Publication Date
NL9101017A NL9101017A (nl) 1992-01-02
NL193919B true NL193919B (nl) 2000-10-02
NL193919C NL193919C (nl) 2001-02-05

Family

ID=19300014

Family Applications (1)

Application Number Title Priority Date Filing Date
NL9101017A NL193919C (nl) 1990-06-12 1991-06-12 X-vormig ROM.

Country Status (8)

Country Link
US (1) US6194767B1 (nl)
JP (1) JPH0758739B2 (nl)
KR (1) KR940002837B1 (nl)
DE (1) DE4119200C2 (nl)
FR (1) FR2663148B1 (nl)
GB (1) GB2245100B (nl)
NL (1) NL193919C (nl)
RU (1) RU2134915C1 (nl)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001035941A (ja) * 1999-07-23 2001-02-09 Nec Corp 半導体記憶装置及びその製造方法
JP2004095893A (ja) 2002-08-30 2004-03-25 Nec Electronics Corp 半導体記憶装置及びその制御方法と製造方法
US9911693B2 (en) 2015-08-28 2018-03-06 Micron Technology, Inc. Semiconductor devices including conductive lines and methods of forming the semiconductor devices
US10622030B1 (en) * 2018-10-28 2020-04-14 Nanya Technology Corporation Memory structure with non-straight word line

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4603341A (en) * 1983-09-08 1986-07-29 International Business Machines Corporation Stacked double dense read only memory
JPS6271264A (ja) * 1985-09-25 1987-04-01 Hitachi Ltd 半導体集積回路装置

Also Published As

Publication number Publication date
KR940002837B1 (ko) 1994-04-04
GB9112650D0 (en) 1991-07-31
GB2245100B (en) 1994-10-26
JPH0758739B2 (ja) 1995-06-21
FR2663148B1 (fr) 1994-11-25
DE4119200A1 (de) 1991-12-19
US6194767B1 (en) 2001-02-27
DE4119200C2 (de) 1994-09-08
NL193919C (nl) 2001-02-05
GB2245100A (en) 1991-12-18
FR2663148A1 (fr) 1991-12-13
NL9101017A (nl) 1992-01-02
JPH05343645A (ja) 1993-12-24
KR920001547A (ko) 1992-01-30
RU2134915C1 (ru) 1999-08-20

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Legal Events

Date Code Title Description
V1 Lapsed because of non-payment of the annual fee

Effective date: 20100101