NL177956B - Fotokoppelinrichting. - Google Patents

Fotokoppelinrichting.

Info

Publication number
NL177956B
NL177956B NLAANVRAGE7710763,A NL7710763A NL177956B NL 177956 B NL177956 B NL 177956B NL 7710763 A NL7710763 A NL 7710763A NL 177956 B NL177956 B NL 177956B
Authority
NL
Netherlands
Prior art keywords
photocouple
photocouple device
Prior art date
Application number
NLAANVRAGE7710763,A
Other languages
English (en)
Other versions
NL7710763A (nl
NL177956C (nl
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP51117789A external-priority patent/JPS582468B2/ja
Priority claimed from JP15715776A external-priority patent/JPS5380990A/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of NL7710763A publication Critical patent/NL7710763A/nl
Publication of NL177956B publication Critical patent/NL177956B/nl
Application granted granted Critical
Publication of NL177956C publication Critical patent/NL177956C/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Led Device Packages (AREA)
NLAANVRAGE7710763,A 1976-09-30 1977-09-30 Fotokoppelinrichting. NL177956C (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP51117789A JPS582468B2 (ja) 1976-09-30 1976-09-30 光結合半導体装置
JP15715776A JPS5380990A (en) 1976-12-25 1976-12-25 Optical combination semiconductor device

Publications (3)

Publication Number Publication Date
NL7710763A NL7710763A (nl) 1978-04-03
NL177956B true NL177956B (nl) 1985-07-16
NL177956C NL177956C (nl) 1985-12-16

Family

ID=26455832

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7710763,A NL177956C (nl) 1976-09-30 1977-09-30 Fotokoppelinrichting.

Country Status (3)

Country Link
US (1) US4143385A (nl)
DE (1) DE2744167C2 (nl)
NL (1) NL177956C (nl)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2471014A1 (fr) * 1979-11-28 1981-06-12 Radiotechnique Compelec Dispositif d'affichage a diodes electroluminescentes
US4279465A (en) * 1979-11-30 1981-07-21 The Singer Company Device for transmitting and receiving optical data on the same optical transmission line
US4352449A (en) * 1979-12-26 1982-10-05 Bell Telephone Laboratories, Incorporated Fabrication of circuit packages
US4332341A (en) * 1979-12-26 1982-06-01 Bell Telephone Laboratories, Incorporated Fabrication of circuit packages using solid phase solder bonding
JPS6080264A (ja) * 1983-10-07 1985-05-08 Toshiba Corp 半導体装置
US4672421A (en) * 1984-04-02 1987-06-09 Motorola, Inc. Semiconductor packaging and method
US4754912A (en) * 1984-04-05 1988-07-05 National Semiconductor Corporation Controlled collapse thermocompression gang bonding
JPH0815167B2 (ja) * 1986-03-26 1996-02-14 株式会社日立製作所 半導体装置
DE3713067A1 (de) * 1986-09-30 1988-03-31 Siemens Ag Optoelektronisches koppelelement und verfahren zu dessen herstellung
DE3633181C2 (de) * 1986-09-30 1998-12-10 Siemens Ag Reflexlichtschranke
DE3817600C2 (de) * 1987-05-26 1994-06-23 Matsushita Electric Works Ltd Verfahren zur Herstellung einer Halbleitervorrichtung mit einem keramischen Substrat und einem integrierten Schaltungskreis
US4897711A (en) * 1988-03-03 1990-01-30 American Telephone And Telegraph Company Subassembly for optoelectronic devices
US4945400A (en) * 1988-03-03 1990-07-31 At&T Bell Laboratories Subassembly for optoelectronic devices
US4948960A (en) * 1988-09-20 1990-08-14 The University Of Delaware Dual mode light emitting diode/detector diode for optical fiber transmission lines
US5081520A (en) * 1989-05-16 1992-01-14 Minolta Camera Kabushiki Kaisha Chip mounting substrate having an integral molded projection and conductive pattern
JP3337405B2 (ja) * 1996-12-27 2002-10-21 シャープ株式会社 発光表示素子およびその電気配線基板への接続方法ならびに製造方法
GB2344455A (en) * 1998-12-01 2000-06-07 Mitel Semiconductor Ab Semiconductor device with low parasitic capacitance
JP4897133B2 (ja) * 1999-12-09 2012-03-14 ソニー株式会社 半導体発光素子、その製造方法および配設基板
KR100411811B1 (ko) * 2001-04-02 2003-12-24 앰코 테크놀로지 코리아 주식회사 반도체패키지
US6812064B2 (en) * 2001-11-07 2004-11-02 Micron Technology, Inc. Ozone treatment of a ground semiconductor die to improve adhesive bonding to a substrate
EP1464084A1 (de) * 2002-01-09 2004-10-06 Infineon Technologies AG Photodiodenanordnung und verfahren zur herstellung einer verbindung zwischen einem ersten halbleiterbauelement und einem zweiten halbleiterbauelement
JP2004128219A (ja) * 2002-10-02 2004-04-22 Shinko Electric Ind Co Ltd 付加機能を有する半導体装置及びその製造方法
US7453058B2 (en) * 2005-03-15 2008-11-18 Fujitsu Limited Optical bumps for low-loss interconnection between a device and its supported substrate and related methods
WO2009115994A2 (en) * 2008-03-20 2009-09-24 Nxp B.V. An optoelectronic coupler device and a method of manufacturing the same
TWI607587B (zh) * 2016-09-13 2017-12-01 台灣琭旦股份有限公司 固晶穩固製程

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2609429A (en) * 1950-07-29 1952-09-02 Rca Corp Semiconduction electrode construction
US3366793A (en) * 1963-07-01 1968-01-30 Asea Ab Optically coupled semi-conductor reactifier with increased blocking voltage
GB1007876A (en) * 1963-08-15 1965-10-22 Mullard Ltd Improvements in and relating to opto-electronic semiconductor devices
DE1190506B (de) * 1963-10-10 1965-04-08 Siemens Ag Optisch gesteuerte, mindestens vier Zonen von abwechselnd unterschiedlichem Leitungstyp aufweisende Schalt- oder Kippdiode
FR1413301A (fr) * 1963-10-17 1965-10-08 Ibm Appareil de commutation et de multiplexage de circuits électriques
US3355635A (en) * 1964-05-28 1967-11-28 Rca Corp Semiconductor device assemblage having two convex tabs
USB411062I5 (nl) * 1964-11-13
FR1486855A (nl) * 1965-07-17 1967-10-05
US3871015A (en) * 1969-08-14 1975-03-11 Ibm Flip chip module with non-uniform connector joints
JPS5310862Y2 (nl) * 1972-12-28 1978-03-23
US4012833A (en) * 1973-12-28 1977-03-22 Sony Corporation Method of making display structure having light emitting diodes
JPS5642148B2 (nl) * 1975-01-24 1981-10-02
JPS584470B2 (ja) * 1975-04-02 1983-01-26 株式会社日立製作所 ヒカリケツゴウハンドウタイソウチ オヨビ ソノセイホウ
US4005457A (en) * 1975-07-10 1977-01-25 Semimetals, Inc. Semiconductor assembly, method of manufacturing same, and bonding agent therefor
JPS52137279A (en) * 1976-05-12 1977-11-16 Hitachi Ltd Semiconductor device for optical coupling

Also Published As

Publication number Publication date
DE2744167C2 (de) 1984-05-10
NL7710763A (nl) 1978-04-03
NL177956C (nl) 1985-12-16
US4143385A (en) 1979-03-06
DE2744167A1 (de) 1978-04-06

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Legal Events

Date Code Title Description
V1 Lapsed because of non-payment of the annual fee