NL169933C - Foto-elektrische inrichting omvattende een amorfe laag van fotogeleidend halfgeleidermateriaal met een seleengehalte van ten minste 50 atoom %. - Google Patents

Foto-elektrische inrichting omvattende een amorfe laag van fotogeleidend halfgeleidermateriaal met een seleengehalte van ten minste 50 atoom %.

Info

Publication number
NL169933C
NL169933C NLAANVRAGE7610888,A NL7610888A NL169933C NL 169933 C NL169933 C NL 169933C NL 7610888 A NL7610888 A NL 7610888A NL 169933 C NL169933 C NL 169933C
Authority
NL
Netherlands
Prior art keywords
amorphane
atomic
layer
semiconductor material
device containing
Prior art date
Application number
NLAANVRAGE7610888,A
Other languages
English (en)
Dutch (nl)
Other versions
NL169933B (nl
NL7610888A (nl
Original Assignee
Hitachi Ltd
Japan Broadcasting Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Japan Broadcasting Corp filed Critical Hitachi Ltd
Publication of NL7610888A publication Critical patent/NL7610888A/xx
Publication of NL169933B publication Critical patent/NL169933B/xx
Application granted granted Critical
Publication of NL169933C publication Critical patent/NL169933C/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
  • Light Receiving Elements (AREA)
NLAANVRAGE7610888,A 1975-10-03 1976-10-01 Foto-elektrische inrichting omvattende een amorfe laag van fotogeleidend halfgeleidermateriaal met een seleengehalte van ten minste 50 atoom %. NL169933C (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50119633A JPS5244194A (en) 1975-10-03 1975-10-03 Photoelectric conversion device

Publications (3)

Publication Number Publication Date
NL7610888A NL7610888A (nl) 1977-04-05
NL169933B NL169933B (nl) 1982-04-01
NL169933C true NL169933C (nl) 1982-09-01

Family

ID=14766266

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7610888,A NL169933C (nl) 1975-10-03 1976-10-01 Foto-elektrische inrichting omvattende een amorfe laag van fotogeleidend halfgeleidermateriaal met een seleengehalte van ten minste 50 atoom %.

Country Status (7)

Country Link
US (1) US4307319A (ja)
JP (1) JPS5244194A (ja)
CA (1) CA1060568A (ja)
DE (1) DE2644001C2 (ja)
FR (1) FR2326781A1 (ja)
GB (1) GB1519669A (ja)
NL (1) NL169933C (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56132750A (en) * 1980-03-24 1981-10-17 Hitachi Ltd Photoelectric converter and manufacture
JPS62139404A (ja) * 1985-12-13 1987-06-23 Nec Corp パラメトリツク増幅器
JPS62223951A (ja) * 1986-03-26 1987-10-01 Hitachi Ltd 光導電膜
US4816715A (en) * 1987-07-09 1989-03-28 Hitachi, Ltd. Image pick-up tube target
GB201000693D0 (en) * 2010-01-15 2010-03-03 Isis Innovation A solar cell
CA3012494C (en) * 2016-02-08 2022-09-20 Thunder Bay Regional Health Research Institute Amorphous lead oxide based energy detection devices and methods of manufacture thereof

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1091869A (en) * 1963-12-14 1967-11-22 Matsushita Electronics Corp Photoconductive targets
US3405298A (en) * 1965-03-04 1968-10-08 Rca Corp Photoconductive device having a target including a selenium blocking layer
US3350595A (en) * 1965-11-15 1967-10-31 Rca Corp Low dark current photoconductive device
US3346755A (en) * 1966-03-31 1967-10-10 Rca Corp Dark current reduction in photoconductive target by barrier junction between opposite conductivity type materials
JPS5137155B2 (ja) * 1973-03-12 1976-10-14
JPS5246772B2 (ja) * 1973-05-21 1977-11-28
JPS521575B2 (ja) * 1973-07-16 1977-01-17

Also Published As

Publication number Publication date
GB1519669A (en) 1978-08-02
DE2644001C2 (de) 1985-05-09
FR2326781B1 (ja) 1980-04-30
NL169933B (nl) 1982-04-01
JPS5417633B2 (ja) 1979-07-02
US4307319A (en) 1981-12-22
JPS5244194A (en) 1977-04-06
CA1060568A (en) 1979-08-14
NL7610888A (nl) 1977-04-05
DE2644001A1 (de) 1977-04-21
FR2326781A1 (fr) 1977-04-29

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Legal Events

Date Code Title Description
V4 Discontinued because of reaching the maximum lifetime of a patent

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