NL162512C - Halfgeleiderinrichting en werkwijze voor de vervaar- diging ervan. - Google Patents

Halfgeleiderinrichting en werkwijze voor de vervaar- diging ervan.

Info

Publication number
NL162512C
NL162512C NL7014842A NL7014842A NL162512C NL 162512 C NL162512 C NL 162512C NL 7014842 A NL7014842 A NL 7014842A NL 7014842 A NL7014842 A NL 7014842A NL 162512 C NL162512 C NL 162512C
Authority
NL
Netherlands
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Application number
NL7014842A
Other languages
English (en)
Dutch (nl)
Other versions
NL162512B (nl
NL7014842A (de
Original Assignee
Tokyo Shibaura Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1037670A external-priority patent/JPS504310B1/ja
Priority claimed from JP1710370A external-priority patent/JPS505908B1/ja
Priority claimed from JP2082670A external-priority patent/JPS4940111B1/ja
Priority claimed from JP2562770A external-priority patent/JPS501871B1/ja
Application filed by Tokyo Shibaura Electric Co filed Critical Tokyo Shibaura Electric Co
Publication of NL7014842A publication Critical patent/NL7014842A/xx
Publication of NL162512B publication Critical patent/NL162512B/xx
Application granted granted Critical
Publication of NL162512C publication Critical patent/NL162512C/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
NL7014842A 1970-02-07 1970-10-09 Halfgeleiderinrichting en werkwijze voor de vervaar- diging ervan. NL162512C (nl)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP1037670A JPS504310B1 (de) 1970-02-07 1970-02-07
JP1710370A JPS505908B1 (de) 1970-03-02 1970-03-02
JP2082670A JPS4940111B1 (de) 1970-03-13 1970-03-13
JP2562770A JPS501871B1 (de) 1970-03-28 1970-03-28

Publications (3)

Publication Number Publication Date
NL7014842A NL7014842A (de) 1971-08-10
NL162512B NL162512B (nl) 1979-12-17
NL162512C true NL162512C (nl) 1980-05-16

Family

ID=27455384

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7014842A NL162512C (nl) 1970-02-07 1970-10-09 Halfgeleiderinrichting en werkwijze voor de vervaar- diging ervan.

Country Status (4)

Country Link
DE (1) DE2049696C3 (de)
FR (1) FR2080965B1 (de)
GB (1) GB1288029A (de)
NL (1) NL162512C (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3821038A (en) * 1972-05-22 1974-06-28 Ibm Method for fabricating semiconductor structures with minimum crystallographic defects
FR2186734A1 (en) * 1972-05-29 1974-01-11 Radiotechnique Compelec Microwave semiconductor component production - by simultaneous multiple diffusion from doped insulation films
US4697202A (en) * 1984-02-02 1987-09-29 Sri International Integrated circuit having dislocation free substrate

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB953034A (en) * 1961-07-13 1964-03-25 Clevite Corp Improvements in or relating to semiconductor devices
AT243318B (de) * 1962-09-21 1965-11-10 Siemens Ag Verfahren zur Herstellung hoher Dotierungsgrade in Halbleiterstoffen
US3249831A (en) * 1963-01-04 1966-05-03 Westinghouse Electric Corp Semiconductor controlled rectifiers with a p-n junction having a shallow impurity concentration gradient

Also Published As

Publication number Publication date
DE2049696C3 (de) 1982-02-18
NL162512B (nl) 1979-12-17
FR2080965B1 (de) 1976-05-28
DE2049696B2 (de) 1981-06-11
GB1288029A (de) 1972-09-06
DE2049696A1 (de) 1971-08-26
FR2080965A1 (de) 1971-11-26
NL7014842A (de) 1971-08-10

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Legal Events

Date Code Title Description
V4 Lapsed because of reaching the maxim lifetime of a patent