US2736848A
(en)
*
|
1949-03-03 |
1956-02-28 |
Rca Corp |
Photocells
|
US2623103A
(en)
*
|
1949-06-09 |
1952-12-23 |
Bell Telephone Labor Inc |
Semiconductor signal translating device
|
US2691736A
(en)
*
|
1950-12-27 |
1954-10-12 |
Bell Telephone Labor Inc |
Electrical translation device, including semiconductor
|
NL167481C
(nl)
*
|
1951-02-16 |
|
Henkel Kgaa |
Werkwijze voor het behandelen van aluminiumoppervlak- ken.
|
US2794863A
(en)
*
|
1951-07-20 |
1957-06-04 |
Bell Telephone Labor Inc |
Semiconductor translating device and circuit
|
US2763832A
(en)
*
|
1951-07-28 |
1956-09-18 |
Bell Telephone Labor Inc |
Semiconductor circuit controlling device
|
BE511293A
(pt)
*
|
1951-08-24 |
|
|
|
US2680160A
(en)
*
|
1951-09-15 |
1954-06-01 |
Bell Telephone Labor Inc |
Bias circuit for transistor amplifiers
|
BE512181A
(pt)
*
|
1951-09-18 |
|
|
|
US2623105A
(en)
*
|
1951-09-21 |
1952-12-23 |
Bell Telephone Labor Inc |
Semiconductor translating device having controlled gain
|
GB692337A
(en)
*
|
1951-10-24 |
1953-06-03 |
Standard Telephones Cables Ltd |
Improvements in or relating to electron beam tube arrangements
|
US2702838A
(en)
*
|
1951-11-15 |
1955-02-22 |
Bell Telephone Labor Inc |
Semiconductor signal translating device
|
US2812445A
(en)
*
|
1951-11-16 |
1957-11-05 |
Bell Telephone Labor Inc |
Transistor trigger circuit
|
US2740901A
(en)
*
|
1951-12-29 |
1956-04-03 |
Bell Telephone Labor Inc |
Differential photocell detector using junction semiconductors
|
US2763731A
(en)
*
|
1952-02-09 |
1956-09-18 |
Bell Telephone Labor Inc |
Semiconductor signal translating devices
|
BE517808A
(pt)
*
|
1952-03-14 |
|
|
|
NL113882C
(pt)
*
|
1952-06-13 |
|
|
|
DE958393C
(de)
*
|
1952-07-22 |
1957-02-21 |
Western Electric Co |
Signaluebertragungsanordnung mit einem Transistor mit vier Zonen verschiedenen Leitfaehigkeitstyps
|
DE960655C
(de)
*
|
1952-10-10 |
1957-03-28 |
Siemens Ag |
Kristalltriode oder -polyode
|
US2717342A
(en)
*
|
1952-10-28 |
1955-09-06 |
Bell Telephone Labor Inc |
Semiconductor translating devices
|
US2805397A
(en)
*
|
1952-10-31 |
1957-09-03 |
Bell Telephone Labor Inc |
Semiconductor signal translating devices
|
US2764642A
(en)
*
|
1952-10-31 |
1956-09-25 |
Bell Telephone Labor Inc |
Semiconductor signal translating devices
|
US2776367A
(en)
*
|
1952-11-18 |
1957-01-01 |
Lebovec Kurt |
Photon modulation in semiconductors
|
US2795762A
(en)
*
|
1952-12-05 |
1957-06-11 |
Rca Corp |
Modulation
|
NL175251B
(nl)
*
|
1953-01-13 |
|
Lely Nv C Van Der |
Grondbewerkingsmachine.
|
US2794917A
(en)
*
|
1953-01-27 |
1957-06-04 |
Bell Telephone Labor Inc |
High frequency negative resistance device
|
US2867732A
(en)
*
|
1953-05-14 |
1959-01-06 |
Ibm |
Current multiplication transistors and method of producing same
|
US2795744A
(en)
*
|
1953-06-12 |
1957-06-11 |
Bell Telephone Labor Inc |
Semiconductor signal translating devices
|
US2854651A
(en)
*
|
1953-06-30 |
1958-09-30 |
Bell Telephone Labor Inc |
Diode circuits
|
DE1021489B
(de)
*
|
1953-12-23 |
1957-12-27 |
Ibm Deutschland |
Spitzentransistor aus einem Halbleiterkristall wie Germanium oder Silizium mit vier oder mehr Spitzenelektroden
|
NL102058C
(pt)
*
|
1953-12-31 |
|
|
|
US2888648A
(en)
*
|
1954-03-31 |
1959-05-26 |
Hazeltine Research Inc |
Transistor reactance device
|
US2907885A
(en)
*
|
1954-04-09 |
1959-10-06 |
Int Standard Electric Corp |
Magnetic control circuit
|
US2932748A
(en)
*
|
1954-07-26 |
1960-04-12 |
Rca Corp |
Semiconductor devices
|
US2862109A
(en)
*
|
1954-08-11 |
1958-11-25 |
Westinghouse Electric Corp |
Phototransistor light detector
|
US2889499A
(en)
*
|
1954-09-27 |
1959-06-02 |
Ibm |
Bistable semiconductor device
|
US2992337A
(en)
*
|
1955-05-20 |
1961-07-11 |
Ibm |
Multiple collector transistors and circuits therefor
|
US3028506A
(en)
*
|
1954-09-30 |
1962-04-03 |
Ibm |
Binary type pulse handling device
|
US2845546A
(en)
*
|
1954-12-29 |
1958-07-29 |
Ibm |
Amplitude discriminator
|
DE1041163B
(de)
*
|
1955-03-02 |
1958-10-16 |
Licentia Gmbh |
Elektrisch steuerbares Halbleitersystem, z. B. Flaechentransistor, aus einem einkristallinen Halbleiterkoerper
|
DE1080691B
(de)
*
|
1955-05-18 |
1960-04-28 |
Ibm Deutschland |
Transistor mit einem Halbleiterkoerper mit einer P- und einer N-Zone, die sich in einem PN-UEbergang beruehren, und mit einem Hook-Kollektor
|
DE1035778B
(de)
*
|
1955-05-20 |
1958-08-07 |
Ibm Deutschland |
Transistor mit einem Halbleitergrundkoerper von einem Leitungstypus und mit drei oder mehr pn-UEbergaengen und einer oder mehreren Spitzenelektroden
|
US2995665A
(en)
*
|
1955-05-20 |
1961-08-08 |
Ibm |
Transistors and circuits therefor
|
NL105192C
(pt)
*
|
1955-05-26 |
1963-07-15 |
Philips Nv |
|
US2993998A
(en)
*
|
1955-06-09 |
1961-07-25 |
Sprague Electric Co |
Transistor combinations
|
US2863105A
(en)
*
|
1955-11-10 |
1958-12-02 |
Hoffman Electronics Corp |
Rectifying device
|
NL212646A
(pt)
*
|
1955-12-02 |
|
|
|
US2967279A
(en)
*
|
1956-05-21 |
1961-01-03 |
Honeywell Regulator Co |
Phototransistor modulating apparatus
|
US3028500A
(en)
*
|
1956-08-24 |
1962-04-03 |
Rca Corp |
Photoelectric apparatus
|
GB887327A
(en)
*
|
1957-05-31 |
1962-01-17 |
Ibm |
Improvements in transistors
|
DE1084382B
(de)
*
|
1957-07-15 |
1960-06-30 |
Raytheon Mfg Co |
Halbleiteranordnung mit einem Halbleiterkoerper aus zwei Zonen entgegengesetzten Leitfaehigkeitstyps
|
DE1073631B
(de)
*
|
1957-10-16 |
1960-01-21 |
LICENTIA Patent-Verwaltuntrs-G.m.b.H., Frankfurt/M |
Vorrichtung zur Temperaturüberwachung einer elektrischen Halbleiteranordnung
|
DE1130523B
(de)
*
|
1958-01-22 |
1962-05-30 |
Siemens Ag |
Anordnung mit mindestens drei pnp-bzw. npn-Flaechentransistoren
|
US2998534A
(en)
*
|
1958-09-04 |
1961-08-29 |
Clevite Corp |
Symmetrical junction transistor device and circuit
|
NL245195A
(pt)
*
|
1958-12-11 |
|
|
|
US3005107A
(en)
*
|
1959-06-04 |
1961-10-17 |
Hoffman Electronics Corp |
Photoconductive devices
|
US3040262A
(en)
*
|
1959-06-22 |
1962-06-19 |
Bell Telephone Labor Inc |
Light sensitive resonant circuit
|
US2993999A
(en)
*
|
1959-10-30 |
1961-07-25 |
Ibm |
Photoelectric sensing
|
US3210696A
(en)
*
|
1961-02-10 |
1965-10-05 |
Westinghouse Electric Corp |
Bridged-t filter
|
US3548269A
(en)
*
|
1968-12-03 |
1970-12-15 |
Sprague Electric Co |
Resistive layer semiconductive device
|
US5136346A
(en)
*
|
1990-09-07 |
1992-08-04 |
Motorola, Inc. |
Photon stimulated variable capacitance effect devices
|