NL144775B - Halfgeleiderinrichting met meer dan een halfgeleiderschakelelement in een lichaam. - Google Patents
Halfgeleiderinrichting met meer dan een halfgeleiderschakelelement in een lichaam.Info
- Publication number
- NL144775B NL144775B NL646411057A NL6411057A NL144775B NL 144775 B NL144775 B NL 144775B NL 646411057 A NL646411057 A NL 646411057A NL 6411057 A NL6411057 A NL 6411057A NL 144775 B NL144775 B NL 144775B
- Authority
- NL
- Netherlands
- Prior art keywords
- switching element
- semiconductor
- semiconductor device
- semiconductor switching
- switching
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10158—Shape being other than a cuboid at the passive surface
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/037—Diffusion-deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/049—Equivalence and options
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL646411057A NL144775B (nl) | 1964-09-23 | 1964-09-23 | Halfgeleiderinrichting met meer dan een halfgeleiderschakelelement in een lichaam. |
US487748A US3614558A (en) | 1964-09-23 | 1965-09-16 | Semiconductor devices with more than one semiconductor circuit element in one body |
GB39928/65A GB1124801A (en) | 1964-09-23 | 1965-09-20 | Improvements in and relating to semiconductor devices |
SE12225/65A SE314441B (nl) | 1964-09-23 | 1965-09-20 | |
CH1295365A CH436508A (de) | 1964-09-23 | 1965-09-20 | Halbleitervorrichtung mit mehreren Halbleiterschaltelementen in einer Unterlage |
AT855365A AT263081B (de) | 1964-09-23 | 1965-09-20 | Halbleitervorrichtung mit mehr als einem Halbleiterschaltelement in einem Körper |
FR32346A FR1456952A (fr) | 1964-09-23 | 1965-09-23 | Dispositif semiconducteur et son procédé de fabrication |
BE670038A BE670038A (nl) | 1964-09-23 | 1965-09-23 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL646411057A NL144775B (nl) | 1964-09-23 | 1964-09-23 | Halfgeleiderinrichting met meer dan een halfgeleiderschakelelement in een lichaam. |
Publications (2)
Publication Number | Publication Date |
---|---|
NL6411057A NL6411057A (nl) | 1966-03-24 |
NL144775B true NL144775B (nl) | 1975-01-15 |
Family
ID=19791081
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL646411057A NL144775B (nl) | 1964-09-23 | 1964-09-23 | Halfgeleiderinrichting met meer dan een halfgeleiderschakelelement in een lichaam. |
Country Status (8)
Country | Link |
---|---|
US (1) | US3614558A (nl) |
AT (1) | AT263081B (nl) |
BE (1) | BE670038A (nl) |
CH (1) | CH436508A (nl) |
FR (1) | FR1456952A (nl) |
GB (1) | GB1124801A (nl) |
NL (1) | NL144775B (nl) |
SE (1) | SE314441B (nl) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3800195A (en) * | 1972-08-09 | 1974-03-26 | Motorola Inc | Method of making semiconductor devices through overlapping diffusions |
US3865649A (en) * | 1972-10-16 | 1975-02-11 | Harris Intertype Corp | Fabrication of MOS devices and complementary bipolar transistor devices in a monolithic substrate |
US4261003A (en) * | 1979-03-09 | 1981-04-07 | International Business Machines Corporation | Integrated circuit structures with full dielectric isolation and a novel method for fabrication thereof |
US4446476A (en) * | 1981-06-30 | 1984-05-01 | International Business Machines Corporation | Integrated circuit having a sublayer electrical contact and fabrication thereof |
US4649630A (en) * | 1985-04-01 | 1987-03-17 | Motorola, Inc. | Process for dielectrically isolated semiconductor structure |
JPH0638424B2 (ja) * | 1986-07-31 | 1994-05-18 | 株式会社日立製作所 | 半導体装置の製造方法 |
US4794093A (en) * | 1987-05-01 | 1988-12-27 | Raytheon Company | Selective backside plating of gaas monolithic microwave integrated circuits |
US4839309A (en) * | 1988-03-30 | 1989-06-13 | American Telephone And Telegraph Company, At&T Technologies, Inc. | Fabrication of high-speed dielectrically isolated devices utilizing buried silicide outdiffusion |
US5459346A (en) * | 1988-06-28 | 1995-10-17 | Ricoh Co., Ltd. | Semiconductor substrate with electrical contact in groove |
DE102004050740A1 (de) * | 2004-10-19 | 2006-04-20 | Atmel Germany Gmbh | Halbleitergegenstand und Verfahren zur Herstellung |
CN103137547A (zh) * | 2011-11-28 | 2013-06-05 | 中国科学院上海微系统与信息技术研究所 | 一种绝缘体上Si/NiSi2衬底材料及其制备方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE603293A (nl) * | 1960-05-02 | |||
GB948238A (en) * | 1961-09-25 | 1964-01-29 | Raytheon Co | Improvements in or relating to switching circuits |
BE632105A (nl) * | 1962-05-09 | |||
US3323071A (en) * | 1964-07-09 | 1967-05-30 | Nat Semiconductor Corp | Semiconductor circuit arrangement utilizing integrated chopper element as zener-diode-coupled transistor |
US3381182A (en) * | 1964-10-19 | 1968-04-30 | Philco Ford Corp | Microcircuits having buried conductive layers |
US3368113A (en) * | 1965-06-28 | 1968-02-06 | Westinghouse Electric Corp | Integrated circuit structures, and method of making same, including a dielectric medium for internal isolation |
-
1964
- 1964-09-23 NL NL646411057A patent/NL144775B/nl unknown
-
1965
- 1965-09-16 US US487748A patent/US3614558A/en not_active Expired - Lifetime
- 1965-09-20 GB GB39928/65A patent/GB1124801A/en not_active Expired
- 1965-09-20 SE SE12225/65A patent/SE314441B/xx unknown
- 1965-09-20 CH CH1295365A patent/CH436508A/de unknown
- 1965-09-20 AT AT855365A patent/AT263081B/de active
- 1965-09-23 BE BE670038A patent/BE670038A/xx unknown
- 1965-09-23 FR FR32346A patent/FR1456952A/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
BE670038A (nl) | 1966-03-23 |
AT263081B (de) | 1968-07-10 |
GB1124801A (en) | 1968-08-21 |
SE314441B (nl) | 1969-09-08 |
CH436508A (de) | 1967-05-31 |
US3614558A (en) | 1971-10-19 |
NL6411057A (nl) | 1966-03-24 |
FR1456952A (fr) | 1966-07-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
NL146388B (nl) | Inspuitinrichting. | |
NL159822B (nl) | Halfgeleiderinrichting. | |
NL162253C (nl) | Halfgeleiderinrichting. | |
NL157149B (nl) | Halfgeleiderthyristorinrichting. | |
DK117084B (da) | Halvlederkomponent. | |
NL150621B (nl) | Halfgeleiderinrichting met koelorgaan. | |
NL161923C (nl) | Halfgeleiderinrichting. | |
CH478460A (de) | Halbleiter-Schalteinrichtung | |
CH427431A (de) | Mehrwegeumschalteinrichtung | |
NL144775B (nl) | Halfgeleiderinrichting met meer dan een halfgeleiderschakelelement in een lichaam. | |
DK111529B (da) | Halvlederelement. | |
FI45540C (fi) | Sulkulaite. | |
NL163672C (nl) | Halfgeleiderinrichting. | |
CH424995A (de) | Halbleitervorrichtung | |
NL154066B (nl) | Halfgeleiderelement. | |
FI48413C (fi) | Annostuslaite. | |
DK117909B (da) | Halvlederapparat. | |
CH453091A (de) | Schlitten mit Bremsvorrichtung | |
AT261069B (de) | Stromrichter mit Halbleiterventilen | |
CH422168A (de) | Halbleiteranordnung | |
FR1443842A (fr) | Dispositif optique-électronique semi-conducteur | |
NL151567B (nl) | Halfgeleiderinrichting met negatieve weerstandskarakteristiek. | |
NL161621C (nl) | Halfgeleiderinrichting met veldeffecttransistor. | |
DK112325B (da) | Kontaktapparat. | |
BE746854A (nl) | Halfgeleiderschakelinrichting |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
VJC | Lapsed due to non-payment of the due maintenance fee for the patent or patent application | ||
NL80 | Abbreviated name of patent owner mentioned of already nullified patent |
Owner name: PHILIPS |