NL134388C - - Google Patents

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Publication number
NL134388C
NL134388C NL134388DA NL134388C NL 134388 C NL134388 C NL 134388C NL 134388D A NL134388D A NL 134388DA NL 134388 C NL134388 C NL 134388C
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NL
Netherlands
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Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application granted granted Critical
Publication of NL134388C publication Critical patent/NL134388C/xx
Priority claimed from NL6405411A external-priority patent/NL6405411A/xx
Priority claimed from NL6510237A external-priority patent/NL6510237A/xx

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Wire Bonding (AREA)
  • Bipolar Integrated Circuits (AREA)
NL134388D 1964-05-15 NL134388C (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL6405411A NL6405411A (ja) 1964-05-15 1964-05-15
NL6510237A NL6510237A (ja) 1965-08-06 1965-08-06

Publications (1)

Publication Number Publication Date
NL134388C true NL134388C (ja) 1900-01-01

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ID=26643768

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NL134388D NL134388C (ja) 1964-05-15

Country Status (9)

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US (1) US3373323A (ja)
JP (1) JPS4820951B1 (ja)
BE (2) BE663896A (ja)
CH (1) CH432661A (ja)
DE (1) DE1514254B2 (ja)
DK (1) DK117084B (ja)
GB (1) GB1111663A (ja)
NL (1) NL134388C (ja)
SE (1) SE320128B (ja)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6606714A (ja) * 1966-05-17 1967-11-20
NL6609002A (ja) * 1966-06-29 1968-01-02
DE1564705A1 (de) * 1966-09-12 1970-05-14 Siemens Ag Halbleiteranordnung mit mindestens einem in Emitterschaltung betriebenen Transistor
US3518504A (en) * 1966-11-15 1970-06-30 Int Standard Electric Corp Transistor with lead-in electrodes
NL158027B (nl) * 1967-09-12 1978-09-15 Philips Nv Gestabiliseerde planaire halfgeleiderinrichting met een hoog gedoteerde oppervlaktezone.
US3573571A (en) * 1967-10-13 1971-04-06 Gen Electric Surface-diffused transistor with isolated field plate
GB1188879A (en) * 1967-12-13 1970-04-22 Matsushita Electronics Corp Planar Transistor
DE1926989A1 (de) * 1969-05-27 1970-12-03 Beneking Prof Dr Rer Nat Heinz Hochfrequenzleitung
DE1927876C3 (de) * 1969-05-31 1979-09-27 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiteranordnung
US3697828A (en) * 1970-12-03 1972-10-10 Gen Motors Corp Geometry for a pnp silicon transistor with overlay contacts
US3763550A (en) * 1970-12-03 1973-10-09 Gen Motors Corp Geometry for a pnp silicon transistor with overlay contacts
JPS547196B2 (ja) * 1971-08-26 1979-04-04
US4017886A (en) * 1972-10-18 1977-04-12 Hitachi, Ltd. Discrete semiconductor device having polymer resin as insulator and method for making the same
US4360823A (en) * 1977-03-16 1982-11-23 U.S. Philips Corporation Semiconductor device having an improved multilayer wiring system
US4302530A (en) * 1977-12-08 1981-11-24 University Of Pennsylvania Method for making substance-sensitive electrical structures by processing substance-sensitive photoresist material
US4644380A (en) * 1977-12-08 1987-02-17 University Of Pennsylvania Substance-sensitive electrical structures
JPS54157092A (en) * 1978-05-31 1979-12-11 Nec Corp Semiconductor integrated circuit device
JPS5850417B2 (ja) * 1979-07-31 1983-11-10 富士通株式会社 半導体装置の製造方法
US4442529A (en) * 1981-02-04 1984-04-10 At&T Bell Telephone Laboratories, Incorporated Power supply rejection characteristics of CMOS circuits
JPS6042855A (ja) * 1983-08-19 1985-03-07 Hitachi Ltd 半導体装置
US4693780A (en) * 1985-02-22 1987-09-15 Siemens Aktiengesellschaft Electrical isolation and leveling of patterned surfaces
US4908689A (en) * 1986-05-06 1990-03-13 International Business Machines Corporation Organic solder barrier
JPH0517192Y2 (ja) * 1987-12-24 1993-05-10
US5053850A (en) * 1988-03-14 1991-10-01 Motorola, Inc. Bonding pad for semiconductor devices
US5874782A (en) * 1995-08-24 1999-02-23 International Business Machines Corporation Wafer with elevated contact structures
JP2003078022A (ja) * 2001-09-06 2003-03-14 Mitsubishi Electric Corp 半導体装置および半導体装置の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3257588A (en) * 1959-04-27 1966-06-21 Rca Corp Semiconductor device enclosures
US3271201A (en) * 1962-10-30 1966-09-06 Itt Planar semiconductor devices
US3271685A (en) * 1963-06-20 1966-09-06 Westinghouse Electric Corp Multipurpose molecular electronic semiconductor device for performing amplifier and oscillator-mixer functions including degenerative feedback means

Also Published As

Publication number Publication date
SE320128B (ja) 1970-02-02
DE1514254A1 (de) 1970-03-05
BE663896A (ja) 1965-11-16
CH432661A (de) 1967-03-31
DE1514254B2 (de) 1971-02-25
JPS4820951B1 (ja) 1973-06-25
GB1111663A (en) 1968-05-01
DK117084B (da) 1970-03-16
US3373323A (en) 1968-03-12
BE669821A (ja) 1966-03-17

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