NL128768C - Werkwijze voor het aanbrengen van een elektrisch aansluitcontact op een door een oxydelaag bedekt halfgeleiderlichaam en halfgeleiderinrichting ver- vaardigd onder toepassing van deze werkwijze - Google Patents

Werkwijze voor het aanbrengen van een elektrisch aansluitcontact op een door een oxydelaag bedekt halfgeleiderlichaam en halfgeleiderinrichting ver- vaardigd onder toepassing van deze werkwijze

Info

Publication number
NL128768C
NL128768C NL268503A NL268503A NL128768C NL 128768 C NL128768 C NL 128768C NL 268503 A NL268503 A NL 268503A NL 268503 A NL268503 A NL 268503A NL 128768 C NL128768 C NL 128768C
Authority
NL
Netherlands
Prior art keywords
applying
oxide layer
electrical connection
device manufactured
connection contact
Prior art date
Application number
NL268503A
Other languages
English (en)
Dutch (nl)
Inventor
Martin Paul Lepselter
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Application granted granted Critical
Publication of NL128768C publication Critical patent/NL128768C/nl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • H10W74/43—
    • H10P95/00—
    • H10W20/40—
    • H10W72/013—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/9335—Product by special process
    • Y10S428/934—Electrical process
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/9335—Product by special process
    • Y10S428/938—Vapor deposition or gas diffusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12444—Embodying fibers interengaged or between layers [e.g., paper, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12583—Component contains compound of adjacent metal
    • Y10T428/1259—Oxide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Photovoltaic Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Die Bonding (AREA)
NL268503A 1960-12-09 1961-08-22 Werkwijze voor het aanbrengen van een elektrisch aansluitcontact op een door een oxydelaag bedekt halfgeleiderlichaam en halfgeleiderinrichting ver- vaardigd onder toepassing van deze werkwijze NL128768C (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US74872A US3106489A (en) 1960-12-09 1960-12-09 Semiconductor device fabrication

Publications (1)

Publication Number Publication Date
NL128768C true NL128768C (nl) 1968-12-15

Family

ID=22122171

Family Applications (2)

Application Number Title Priority Date Filing Date
NL268503D NL268503A (Home) 1960-12-09
NL268503A NL128768C (nl) 1960-12-09 1961-08-22 Werkwijze voor het aanbrengen van een elektrisch aansluitcontact op een door een oxydelaag bedekt halfgeleiderlichaam en halfgeleiderinrichting ver- vaardigd onder toepassing van deze werkwijze

Family Applications Before (1)

Application Number Title Priority Date Filing Date
NL268503D NL268503A (Home) 1960-12-09

Country Status (9)

Country Link
US (1) US3106489A (Home)
JP (1) JPS387274B1 (Home)
BE (1) BE606680A (Home)
CH (1) CH422161A (Home)
DE (1) DE1200439B (Home)
FR (1) FR1298148A (Home)
GB (1) GB991174A (Home)
NL (2) NL128768C (Home)
SE (1) SE219304C1 (Home)

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US3261984A (en) * 1961-03-10 1966-07-19 Philco Corp Tunnel-emission amplifying device and circuit therefor
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US3518066A (en) * 1962-12-26 1970-06-30 Philips Corp Metallizing non-metals
US3310685A (en) * 1963-05-03 1967-03-21 Gtc Kk Narrow band emitter devices
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US3442701A (en) * 1965-05-19 1969-05-06 Bell Telephone Labor Inc Method of fabricating semiconductor contacts
FR1450654A (fr) * 1965-07-01 1966-06-24 Radiotechnique Perfectionnements aux dispositifs semi-conducteurs de détection de radiations ionisantes
US3390969A (en) * 1966-04-27 1968-07-02 Infrared Ind Inc Noble metal coated ceramic substrate for glass seals and electronic connector elements
US3629776A (en) * 1967-10-24 1971-12-21 Nippon Kogaku Kk Sliding thin film resistance for measuring instruments
US3465211A (en) * 1968-02-01 1969-09-02 Friden Inc Multilayer contact system for semiconductors
US3471756A (en) * 1968-03-11 1969-10-07 Us Army Metal oxide-silicon diode containing coating of vanadium pentoxide-v2o5 deposited on n-type material with nickel electrodes
DE1932164B2 (de) * 1968-07-15 1972-04-06 International Business Machines Corp , Armonk, NY (V St A ) Verfahren zum einlegieren von metall in teilbereiche eines insbesondere aus halbleitermaterial bestehenden substrats
US3567508A (en) * 1968-10-31 1971-03-02 Gen Electric Low temperature-high vacuum contact formation process
US4016589A (en) * 1971-11-10 1977-04-05 Omron Tateisi Electronics Co., Ltd. Semiconductor device
US4011577A (en) * 1972-03-21 1977-03-08 Omron Tateisi Electronics Co. Mechanical-electrical force transducer with semiconductor-insulating layer-tin oxide composite
GB1419143A (en) * 1972-04-04 1975-12-24 Omron Tateisi Electronics Co Semiconductor photoelectric device
NL163370C (nl) * 1972-04-28 1980-08-15 Philips Nv Werkwijze voor het vervaardigen van een halfgeleider- inrichting met een geleiderpatroon.
US3983284A (en) * 1972-06-02 1976-09-28 Thomson-Csf Flat connection for a semiconductor multilayer structure
JPS5120277B2 (Home) * 1972-08-17 1976-06-23
CA1017840A (en) * 1973-02-13 1977-09-20 Communications Satellite Corporation Niobium pentoxide anti-reflective coating
US3977905A (en) * 1973-02-13 1976-08-31 Communications Satellite Corporation (Comsat) Solar cell with niobium pentoxide anti-reflective coating
US4082568A (en) * 1977-05-10 1978-04-04 Joseph Lindmayer Solar cell with multiple-metal contacts
US4153518A (en) * 1977-11-18 1979-05-08 Tektronix, Inc. Method of making a metalized substrate having a thin film barrier layer
US4307132A (en) * 1977-12-27 1981-12-22 International Business Machines Corp. Method for fabricating a contact on a semiconductor substrate by depositing an aluminum oxide diffusion barrier layer
US4392010A (en) * 1979-01-16 1983-07-05 Solarex Corporation Photovoltaic cells having contacts and method of applying same
US4235644A (en) * 1979-08-31 1980-11-25 E. I. Du Pont De Nemours And Company Thick film silver metallizations for silicon solar cells
US4471405A (en) * 1981-12-28 1984-09-11 International Business Machines Corporation Thin film capacitor with a dual bottom electrode structure
US4871617A (en) * 1984-04-02 1989-10-03 General Electric Company Ohmic contacts and interconnects to silicon and method of making same
US4702967A (en) * 1986-06-16 1987-10-27 Harris Corporation Multiple-layer, multiple-phase titanium/nitrogen adhesion/diffusion barrier layer structure for gold-base microcircuit interconnection
US5532031A (en) * 1992-01-29 1996-07-02 International Business Machines Corporation I/O pad adhesion layer for a ceramic substrate
US5679982A (en) * 1993-02-24 1997-10-21 Intel Corporation Barrier against metal diffusion
US6690044B1 (en) * 1993-03-19 2004-02-10 Micron Technology, Inc. Approach to avoid buckling BPSG by using an intermediate barrier layer
WO1995002900A1 (en) * 1993-07-15 1995-01-26 Astarix, Inc. Aluminum-palladium alloy for initiation of electroless plating
US6051879A (en) 1997-12-16 2000-04-18 Micron Technology, Inc. Electrical interconnection for attachment to a substrate
US7637801B2 (en) * 2000-09-28 2009-12-29 Sharp Kabushiki Kaisha Method of making solar cell
US6563185B2 (en) * 2001-05-21 2003-05-13 The Regents Of The University Of Colorado High speed electron tunneling device and applications
JP2006310348A (ja) * 2005-04-26 2006-11-09 Sanyo Electric Co Ltd 積層型光起電力装置
JP2008021750A (ja) * 2006-07-11 2008-01-31 Matsushita Electric Ind Co Ltd 抵抗変化素子およびその製造方法、ならびにそれを用いた抵抗変化型メモリ
JP5191527B2 (ja) * 2010-11-19 2013-05-08 日本発條株式会社 積層体および積層体の製造方法
US9166004B2 (en) 2010-12-23 2015-10-20 Intel Corporation Semiconductor device contacts
CN113223944B (zh) * 2021-03-31 2022-09-27 青岛惠科微电子有限公司 一种快恢复芯片的制造方法、制造设备和快恢复芯片
CN113178385B (zh) * 2021-03-31 2022-12-23 青岛惠科微电子有限公司 一种芯片的制造方法、制造设备和芯片
CN113223953B (zh) * 2021-03-31 2022-09-27 青岛惠科微电子有限公司 一种快恢复芯片的制造方法、制造设备和快恢复芯片

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US2695852A (en) * 1952-02-15 1954-11-30 Bell Telephone Labor Inc Fabrication of semiconductors for signal translating devices
US2799600A (en) * 1954-08-17 1957-07-16 Noel W Scott Method of producing electrically conducting transparent coatings on optical surfaces
BE540780A (Home) * 1954-08-26 1900-01-01
DE1067131B (de) * 1954-09-15 1959-10-15 Siemens &. Halske Aktiengesell schatt Berlin und München Verfahren zum Herstellen einer Halbleiteranordnung mit einer zwischen einer Metallschicht und der Oberflache des Halbleiterkristalls erzeugten Randschicht
US2922092A (en) * 1957-05-09 1960-01-19 Westinghouse Electric Corp Base contact members for semiconductor devices
GB829170A (en) * 1957-06-03 1960-02-24 Sperry Rand Corp Method of bonding an element of semiconducting material to an electrode

Also Published As

Publication number Publication date
SE219304C1 (sv) 1968-02-27
GB991174A (en) 1965-05-05
JPS387274B1 (Home) 1963-05-28
CH422161A (de) 1966-10-15
DE1200439B (de) 1965-09-09
US3106489A (en) 1963-10-08
NL268503A (Home)
BE606680A (fr) 1961-11-16
FR1298148A (fr) 1962-07-06

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