NL121810C - - Google Patents

Info

Publication number
NL121810C
NL121810C NL121810DA NL121810C NL 121810 C NL121810 C NL 121810C NL 121810D A NL121810D A NL 121810DA NL 121810 C NL121810 C NL 121810C
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL121810C publication Critical patent/NL121810C/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/645—Combinations of only lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P10/00—
    • H10P32/00—
    • H10P32/12—
    • H10P32/171—
    • H10P95/00—
    • H10W20/40—
    • H10W74/43—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/167—Two diffusions in one hole
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
NL121810D 1955-11-04 NL121810C (index.php)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US544897A US2858489A (en) 1955-11-04 1955-11-04 Power transistor
US810388A US3025589A (en) 1955-11-04 1959-05-01 Method of manufacturing semiconductor devices
US30256A US3064167A (en) 1955-11-04 1960-05-19 Semiconductor device

Publications (1)

Publication Number Publication Date
NL121810C true NL121810C (index.php)

Family

ID=27363619

Family Applications (3)

Application Number Title Priority Date Filing Date
NL121810D NL121810C (index.php) 1955-11-04
NL251064D NL251064A (index.php) 1955-11-04
NL6605653A NL6605653A (index.php) 1955-11-04 1966-04-27

Family Applications After (2)

Application Number Title Priority Date Filing Date
NL251064D NL251064A (index.php) 1955-11-04
NL6605653A NL6605653A (index.php) 1955-11-04 1966-04-27

Country Status (5)

Country Link
US (3) US2858489A (index.php)
CH (3) CH384082A (index.php)
DE (1) DE1197548C2 (index.php)
GB (2) GB843409A (index.php)
NL (3) NL6605653A (index.php)

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US3291658A (en) * 1963-06-28 1966-12-13 Ibm Process of making tunnel diodes that results in a peak current that is maintained over a long period of time
US3279963A (en) * 1963-07-23 1966-10-18 Ibm Fabrication of semiconductor devices
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US3206339A (en) * 1963-09-30 1965-09-14 Philco Corp Method of growing geometricallydefined epitaxial layer without formation of undesirable crystallites
DE1228343B (de) * 1963-10-22 1966-11-10 Siemens Ag Steuerbare Halbleiterdiode mit stellenweise negativer Strom-Spannungs-Kennlinie
US3312881A (en) * 1963-11-08 1967-04-04 Ibm Transistor with limited area basecollector junction
DE1250790B (de) * 1963-12-13 1967-09-28 N.V. Philips' Gloeilampenfabrieken, Eindhoven (Niederlande) Verfahren zur Herstellung diffundierter Zonen von Verunreinigungen in einem Halbleiterkörper
NL134170C (index.php) * 1963-12-17 1900-01-01
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US3298879A (en) * 1964-03-23 1967-01-17 Rca Corp Method of fabricating a semiconductor by masking
DE1514807B2 (de) * 1964-04-15 1971-09-02 Texas Instruments Inc., Dallas. Tex. (V.St.A.) Verfahren zum herstellen einer planaren halbleiteranordnung
US3290570A (en) * 1964-04-28 1966-12-06 Texas Instruments Inc Multilevel expanded metallic contacts for semiconductor devices
US3409483A (en) * 1964-05-01 1968-11-05 Texas Instruments Inc Selective deposition of semiconductor materials
US3363151A (en) * 1964-07-09 1968-01-09 Transitron Electronic Corp Means for forming planar junctions and devices
US3364399A (en) * 1964-07-15 1968-01-16 Irc Inc Array of transistors having a layer of soft metal film for dividing
US3492546A (en) * 1964-07-27 1970-01-27 Raytheon Co Contact for semiconductor device
DE1261480B (de) * 1964-09-17 1968-02-22 Telefunken Patent Verfahren zur Erzeugung einer elektrisch isolierenden Schicht auf einem Halbleiterkoerper
US3310442A (en) * 1964-10-16 1967-03-21 Siemens Ag Method of producing semiconductors by diffusion
US3341380A (en) * 1964-12-28 1967-09-12 Gen Electric Method of producing semiconductor devices
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GB1124762A (en) * 1965-01-08 1968-08-21 Lucas Industries Ltd Semi-conductor devices
US3391023A (en) * 1965-03-29 1968-07-02 Fairchild Camera Instr Co Dielecteric isolation process
US3313661A (en) * 1965-05-14 1967-04-11 Dickson Electronics Corp Treating of surfaces of semiconductor elements
DE1264619C2 (de) * 1965-06-18 1968-10-10 Siemens Ag Verfahren zum Herstellen einer Halbleiteranordnung, insbesondere aus Silizium, einer Silizium-Germanium-Legierung oder aus Siliziumkarbid
US3667115A (en) * 1965-06-30 1972-06-06 Ibm Fabrication of semiconductor devices with cup-shaped regions
US3922706A (en) * 1965-07-31 1975-11-25 Telefunken Patent Transistor having emitter with high circumference-surface area ratio
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Also Published As

Publication number Publication date
GB843409A (en) 1960-08-04
NL6605653A (index.php) 1966-07-25
DE1197548C2 (de) 1975-02-13
US2858489A (en) 1958-10-28
US3025589A (en) 1962-03-20
US3064167A (en) 1962-11-13
CH399603A (de) 1965-09-30
GB947520A (en) 1964-01-22
CH399604A (de) 1965-09-30
NL251064A (index.php)
CH384082A (de) 1964-11-15
DE1197548B (index.php) 1975-02-13

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