NL113990C - - Google Patents

Info

Publication number
NL113990C
NL113990C NL113990DA NL113990C NL 113990 C NL113990 C NL 113990C NL 113990D A NL113990D A NL 113990DA NL 113990 C NL113990 C NL 113990C
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL113990C publication Critical patent/NL113990C/xx
Priority claimed from DES53668A external-priority patent/DE1105396B/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
    • Y02T50/00—Aeronautics or air transport
    • Y02T50/60—Efficient propulsion technologies, e.g. for aircraft
NL113990D 1955-11-02 NL113990C (xx)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES46215A DE1177119B (de) 1955-11-02 1955-11-02 Verfahren zur Herstellung von Reinstsilicium
DES53668A DE1105396B (de) 1957-05-29 1957-05-29 Verfahren und Vorrichtung zur Herstellung von Reinstsilicium

Publications (1)

Publication Number Publication Date
NL113990C true NL113990C (xx)

Family

ID=25995252

Family Applications (4)

Application Number Title Priority Date Filing Date
NL113990D NL113990C (xx) 1955-11-02
NL109287D NL109287C (xx) 1955-11-02
NL211056D NL211056A (xx) 1955-11-02
NL225538D NL225538A (xx) 1955-11-02

Family Applications After (3)

Application Number Title Priority Date Filing Date
NL109287D NL109287C (xx) 1955-11-02
NL211056D NL211056A (xx) 1955-11-02
NL225538D NL225538A (xx) 1955-11-02

Country Status (6)

Country Link
US (1) US3042494A (xx)
CH (2) CH417543A (xx)
DE (1) DE1177119B (xx)
FR (1) FR1204310A (xx)
GB (2) GB805246A (xx)
NL (4) NL225538A (xx)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL122356C (xx) * 1954-05-18 1900-01-01
DE1061593B (de) * 1956-06-25 1959-07-16 Siemens Ag Vorrichtung zur Gewinnung reinsten Halbleitermaterials fuer elektrotechnische Zwecke
US3012861A (en) * 1960-01-15 1961-12-12 Du Pont Production of silicon
DE1138481C2 (de) * 1961-06-09 1963-05-22 Siemens Ag Verfahren zur Herstellung von Halbleiteranordnungen durch einkristalline Abscheidung von Halbleitermaterial aus der Gasphase
US3220380A (en) * 1961-08-21 1965-11-30 Merck & Co Inc Deposition chamber including heater element enveloped by a quartz workholder
NL288472A (xx) * 1962-02-02
US3277865A (en) * 1963-04-01 1966-10-11 United States Steel Corp Metal-vapor source with heated reflecting shield
US4027053A (en) * 1975-12-19 1977-05-31 Motorola, Inc. Method of producing polycrystalline silicon ribbon
US4265859A (en) * 1978-05-31 1981-05-05 Energy Materials Corporation Apparatus for producing semiconductor grade silicon and replenishing the melt of a crystal growth system
US4444812A (en) * 1980-07-28 1984-04-24 Monsanto Company Combination gas curtains for continuous chemical vapor deposition production of silicon bodies
JPS61101410A (ja) * 1984-10-24 1986-05-20 Hiroshi Ishizuka 多結晶珪素の製造法及びそのための装置
US4653428A (en) * 1985-05-10 1987-03-31 General Electric Company Selective chemical vapor deposition apparatus
US4992245A (en) * 1988-03-31 1991-02-12 Advanced Silicon Materials Inc. Annular heated fluidized bed reactor
JP2725081B2 (ja) * 1990-07-05 1998-03-09 富士通株式会社 半導体装置製造用熱処理装置
US5358603A (en) * 1992-10-06 1994-10-25 Albemarle Corporation Process for the removal of a silicon coating from a surface
US5810934A (en) * 1995-06-07 1998-09-22 Advanced Silicon Materials, Inc. Silicon deposition reactor apparatus
JP3206375B2 (ja) * 1995-06-20 2001-09-10 信越半導体株式会社 単結晶薄膜の製造方法
US6365225B1 (en) 1999-02-19 2002-04-02 G.T. Equipment Technologies, Inc. Cold wall reactor and method for chemical vapor deposition of bulk polysilicon
US6284312B1 (en) 1999-02-19 2001-09-04 Gt Equipment Technologies Inc Method and apparatus for chemical vapor deposition of polysilicon
EP2021279A2 (en) * 2006-04-13 2009-02-11 Cabot Corporation Production of silicon through a closed-loop process
DE102009056437B4 (de) 2009-12-02 2013-06-27 Spawnt Private S.À.R.L. Verfahren und Vorrichtung zur Herstellung von kurzkettigen halogenierten Polysilanen
EP2423352A1 (en) 2010-08-24 2012-02-29 Centesil S.L. Thermal shield for silicon production reactors
DE102010044755A1 (de) 2010-09-08 2012-03-08 Spawnt Private S.À.R.L. Verfahren zur Herstellung von Silicium hoher Reinheit
DE102010040836A1 (de) 2010-09-15 2012-03-15 Wacker Chemie Ag Verfahren zur Herstellung von Silicium-Dünnstäben
DE102010042869A1 (de) 2010-10-25 2012-04-26 Wacker Chemie Ag Verfahren zur Herstellung von polykristallinen Siliciumstäben
DE102010063407A1 (de) 2010-12-17 2012-06-21 Wacker Chemie Ag Verfahren und Vorrichtung zur Herstellung von Silicium-Dünnstäben
CN111952149A (zh) * 2013-05-23 2020-11-17 应用材料公司 用于半导体处理腔室的经涂布的衬里组件
DE102013225146A1 (de) 2013-12-06 2014-04-24 Wacker Chemie Ag Verfahren zur Herstellung eines Silicium-Dünnstabs

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1019392A (en) * 1909-10-27 1912-03-05 Gen Electric Electric furnace method and apparatus.
AT95016B (de) * 1914-02-28 1923-11-26 Imre Dr Szarvasy Verfahren zur Darstellung reiner Retortenkohle.
AT93744B (de) * 1914-02-28 1923-07-25 Imre Dr Szarvasy Verfahren zur Darstellung von reiner Retortenkohle.
GB200879A (en) * 1922-03-24 1923-07-24 Philips Nv Improvements in or relating to the manufacture of bodies from metals having a high melting-point
NL16957C (xx) * 1925-03-14 1927-07-26
US1829756A (en) * 1925-06-18 1931-11-03 Siemens Ag Homogeneous body consisting of rhenium
US2441603A (en) * 1943-07-28 1948-05-18 Bell Telephone Labor Inc Electrical translating materials and method of making them
US2654657A (en) * 1950-08-14 1953-10-06 Nat Cylinder Gas Co Tubular reactor with expansion compensator
US2753280A (en) * 1952-05-01 1956-07-03 Rca Corp Method and apparatus for growing crystalline material
US2763581A (en) * 1952-11-25 1956-09-18 Raytheon Mfg Co Process of making p-n junction crystals
US2804377A (en) * 1954-06-25 1957-08-27 Du Pont Preparation of pure silicon
NL105573C (xx) * 1955-08-25
US2909411A (en) * 1957-01-15 1959-10-20 Du Pont Production of silicon
US2912311A (en) * 1957-11-20 1959-11-10 Allied Chem Apparatus for production of high purity elemental silicon

Also Published As

Publication number Publication date
NL211056A (xx)
FR1204310A (fr) 1960-01-25
GB805246A (en) 1958-12-03
GB853729A (en) 1960-11-09
DE1177119B (de) 1964-09-03
US3042494A (en) 1962-07-03
CH426741A (de) 1966-12-31
NL225538A (xx)
CH417543A (de) 1966-07-31
NL109287C (xx)

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