NL113205C - - Google Patents

Info

Publication number
NL113205C
NL113205C NL113205DA NL113205C NL 113205 C NL113205 C NL 113205C NL 113205D A NL113205D A NL 113205DA NL 113205 C NL113205 C NL 113205C
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Application granted granted Critical
Publication of NL113205C publication Critical patent/NL113205C/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/903—Dendrite or web or cage technique
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/074—Horizontal melt solidification
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
NL113205D 1958-08-28 NL113205C (enrdf_load_stackoverflow)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US75783258A 1958-08-28 1958-08-28
US844288A US3031403A (en) 1958-08-28 1959-10-05 Process for producing crystals and the products thereof

Publications (1)

Publication Number Publication Date
NL113205C true NL113205C (enrdf_load_stackoverflow) 1900-01-01

Family

ID=27116458

Family Applications (2)

Application Number Title Priority Date Filing Date
NL113205D NL113205C (enrdf_load_stackoverflow) 1958-08-28
NL241834D NL241834A (enrdf_load_stackoverflow) 1958-08-28

Family Applications After (1)

Application Number Title Priority Date Filing Date
NL241834D NL241834A (enrdf_load_stackoverflow) 1958-08-28

Country Status (6)

Country Link
US (1) US3031403A (enrdf_load_stackoverflow)
CH (2) CH440226A (enrdf_load_stackoverflow)
DE (2) DE1291320B (enrdf_load_stackoverflow)
FR (1) FR1244924A (enrdf_load_stackoverflow)
GB (2) GB889058A (enrdf_load_stackoverflow)
NL (2) NL241834A (enrdf_load_stackoverflow)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3124452A (en) * 1964-03-10 figure
GB948002A (en) * 1959-07-23 1964-01-29 Nat Res Dev Improvements in or relating to the preparation of semiconductor materials
US3130040A (en) * 1960-03-21 1964-04-21 Westinghouse Electric Corp Dendritic seed crystals having a critical spacing between three interior twin planes
NL262949A (enrdf_load_stackoverflow) * 1960-04-02 1900-01-01
US3154384A (en) * 1960-04-13 1964-10-27 Texas Instruments Inc Apparatus for growing compound semiconductor crystal
US3206406A (en) * 1960-05-09 1965-09-14 Merck & Co Inc Critical cooling rate in vapor deposition process to form bladelike semiconductor compound crystals
DE1254607B (de) * 1960-12-08 1967-11-23 Siemens Ag Verfahren zum Herstellen von einkristallinen Halbleiterkoerpoern aus der Gasphase
NL292060A (enrdf_load_stackoverflow) * 1961-03-27 1900-01-01
BE624959A (enrdf_load_stackoverflow) * 1961-11-20
NL285435A (enrdf_load_stackoverflow) * 1961-11-24 1900-01-01
US3152022A (en) * 1962-05-25 1964-10-06 Bell Telephone Labor Inc Epitaxial deposition on the surface of a freshly grown dendrite
DE1193475B (de) * 1962-08-23 1965-05-26 Westinghouse Electric Corp Vorrichtung zum Drehen, Heben und Senken des Tiegels beim Ziehen von dendritischen Einkristallen
US3212858A (en) * 1963-01-28 1965-10-19 Westinghouse Electric Corp Apparatus for producing crystalline semiconductor material
DE1257754B (de) * 1963-01-29 1968-01-04 Fuji Tsushinki Seizo Kabushiki Verfahren und Vorrichtung zum Herstellen von Dendriten aus Halbleitermaterial
GB1015541A (en) * 1963-03-18 1966-01-05 Fujitsu Ltd Improvements in or relating to methods of producing a semi-conductor dendrite
US3278342A (en) * 1963-10-14 1966-10-11 Westinghouse Electric Corp Method of growing crystalline members completely within the solution melt
US3261671A (en) * 1963-11-29 1966-07-19 Philips Corp Device for treating semi-conductor materials by melting
US3291571A (en) * 1963-12-23 1966-12-13 Gen Motors Corp Crystal growth
US3427211A (en) * 1965-07-28 1969-02-11 Ibm Process of making gallium phosphide dendritic crystals with grown in p-n light emitting junctions
US3293002A (en) * 1965-10-19 1966-12-20 Siemens Ag Process for producing tape-shaped semiconductor bodies
US3650703A (en) * 1967-09-08 1972-03-21 Tyco Laboratories Inc Method and apparatus for growing inorganic filaments, ribbon from the melt
US3933981A (en) * 1973-11-30 1976-01-20 Texas Instruments Incorporated Tin-lead purification of silicon
US4125425A (en) * 1974-03-01 1978-11-14 U.S. Philips Corporation Method of manufacturing flat tapes of crystalline silicon from a silicon melt by drawing a seed crystal of silicon from the melt flowing down the faces of a knife shaped heated element
US4121965A (en) * 1976-07-16 1978-10-24 The United States Of America As Represented By The Administrator Of The National Aeronautics & Space Administration Method of controlling defect orientation in silicon crystal ribbon growth
CA1169336A (en) * 1980-01-07 1984-06-19 Emanuel M. Sachs String stabilized ribbon growth method and apparatus
US6217286B1 (en) * 1998-06-26 2001-04-17 General Electric Company Unidirectionally solidified cast article and method of making
WO2004035877A2 (en) * 2002-10-18 2004-04-29 Evergreen Solar, Inc. Method and apparatus for crystal growth
US6814802B2 (en) * 2002-10-30 2004-11-09 Evergreen Solar, Inc. Method and apparatus for growing multiple crystalline ribbons from a single crucible
US11088189B2 (en) * 2017-11-14 2021-08-10 Taiwan Semiconductor Manufacturing Co., Ltd. High light absorption structure for semiconductor image sensor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB769426A (en) * 1953-08-05 1957-03-06 Ass Elect Ind Improvements relating to the manufacture of crystalline material

Also Published As

Publication number Publication date
DE1291320B (de) 1969-03-27
CH475014A (de) 1969-07-15
NL241834A (enrdf_load_stackoverflow) 1900-01-01
FR1244924A (fr) 1960-11-04
US3031403A (en) 1962-04-24
CH440226A (de) 1967-07-31
DE1302031B (de) 1969-10-16
GB913674A (en) 1962-12-28
GB889058A (en) 1962-02-07

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