|
US3211970A
(en)
*
|
1957-05-06 |
1965-10-12 |
Rca Corp |
Semiconductor devices
|
|
NL235051A
(member.php)
*
|
1958-01-16 |
|
|
|
|
FR1193194A
(fr)
*
|
1958-03-12 |
1959-10-30 |
|
Perfectionnements aux procédés de fabrication par diffusion des transistors et des redresseurs à jonctions
|
|
US3132057A
(en)
*
|
1959-01-29 |
1964-05-05 |
Raytheon Co |
Graded energy gap semiconductive device
|
|
DE1137140B
(de)
*
|
1959-04-06 |
1962-09-27 |
Int Standard Electric Corp |
Verfahren zum Herstellen von elektrischen Halbleiterbauelementen mit verminderter Oberflaechenleitfaehigkeit am p-n-UEbergang und verminderter Alterung
|
|
NL125412C
(member.php)
*
|
1959-04-15 |
|
|
|
|
US3005735A
(en)
*
|
1959-07-24 |
1961-10-24 |
Philco Corp |
Method of fabricating semiconductor devices comprising cadmium-containing contacts
|
|
US3028529A
(en)
*
|
1959-08-26 |
1962-04-03 |
Bendix Corp |
Semiconductor diode
|
|
DE1211336B
(de)
*
|
1960-02-12 |
1966-02-24 |
Shindengen Electric Mfg |
Halbleitergleichrichter mit zwei Schichten von verschiedenem spezifischem Widerstand
|
|
NL125226C
(member.php)
*
|
1960-05-02 |
|
|
|
|
US3096219A
(en)
*
|
1960-05-02 |
1963-07-02 |
Rca Corp |
Semiconductor devices
|
|
US3070477A
(en)
*
|
1960-10-03 |
1962-12-25 |
Mandelkorn Joseph |
Method of making a gallium sulfide dioxide
|
|
US3139599A
(en)
*
|
1960-12-09 |
1964-06-30 |
Texas Instruments Inc |
Infrared detector with pn junctions in indium antimonide
|
|
US3176204A
(en)
*
|
1960-12-22 |
1965-03-30 |
Raytheon Co |
Device composed of different semiconductive materials
|
|
US3148094A
(en)
*
|
1961-03-13 |
1964-09-08 |
Texas Instruments Inc |
Method of producing junctions by a relocation process
|
|
US3210624A
(en)
*
|
1961-04-24 |
1965-10-05 |
Monsanto Co |
Article having a silicon carbide substrate with an epitaxial layer of boron phosphide
|
|
NL280641A
(member.php)
*
|
1961-07-07 |
|
|
|
|
NL280849A
(member.php)
*
|
1961-07-12 |
1900-01-01 |
|
|
|
US3262825A
(en)
*
|
1961-12-29 |
1966-07-26 |
Bell Telephone Labor Inc |
Method for etching crystals of group iii(a)-v(a) compounds and etchant used therefor
|
|
US3275539A
(en)
*
|
1962-11-09 |
1966-09-27 |
North American Phillips Compan |
Method of manufacturing semiconductor devices
|
|
US3239393A
(en)
*
|
1962-12-31 |
1966-03-08 |
Ibm |
Method for producing semiconductor articles
|
|
US3255055A
(en)
*
|
1963-03-20 |
1966-06-07 |
Hoffman Electronics Corp |
Semiconductor device
|
|
US3293092A
(en)
*
|
1964-03-17 |
1966-12-20 |
Ibm |
Semiconductor device fabrication
|
|
SE313623B
(member.php)
*
|
1965-01-30 |
1969-08-18 |
Asea Ab |
|
|
US3484854A
(en)
*
|
1966-10-17 |
1969-12-16 |
Westinghouse Electric Corp |
Processing semiconductor materials
|
|
DE2847451C2
(de)
*
|
1978-11-02 |
1986-06-12 |
Telefunken electronic GmbH, 7100 Heilbronn |
Halbleiterbauelement und Verfahren zum Herstellen
|
|
CN112143938B
(zh)
*
|
2020-09-25 |
2021-11-19 |
先导薄膜材料（广东）有限公司 |
砷化镉的制备方法
|