NL1030341A1 - Fotoversterkte UV-behandeling van dielektrische films. - Google Patents

Fotoversterkte UV-behandeling van dielektrische films.

Info

Publication number
NL1030341A1
NL1030341A1 NL1030341A NL1030341A NL1030341A1 NL 1030341 A1 NL1030341 A1 NL 1030341A1 NL 1030341 A NL1030341 A NL 1030341A NL 1030341 A NL1030341 A NL 1030341A NL 1030341 A1 NL1030341 A1 NL 1030341A1
Authority
NL
Netherlands
Prior art keywords
photo
enhanced
treatment
dielectric films
dielectric
Prior art date
Application number
NL1030341A
Other languages
English (en)
Other versions
NL1030341C2 (nl
Inventor
Woo Sik Yoo
Original Assignee
Wafermasters Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wafermasters Inc filed Critical Wafermasters Inc
Publication of NL1030341A1 publication Critical patent/NL1030341A1/nl
Application granted granted Critical
Publication of NL1030341C2 publication Critical patent/NL1030341C2/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28185—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H01L21/02348—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to UV light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/08—Preparation of the foundation plate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28211—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a gaseous ambient using an oxygen or a water vapour, e.g. RTO, possibly through a layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • H01L21/31608—Deposition of SiO2
    • H01L21/31612—Deposition of SiO2 on a silicon body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
    • H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
    • H01L21/31662—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe of silicon in uncombined form
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
NL1030341A 2004-11-05 2005-11-03 Fotoversterkte UV-behandeling van dielektrische films. NL1030341C2 (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US98204504 2004-11-05
US10/982,045 US20060099827A1 (en) 2004-11-05 2004-11-05 Photo-enhanced UV treatment of dielectric films

Publications (2)

Publication Number Publication Date
NL1030341A1 true NL1030341A1 (nl) 2006-05-09
NL1030341C2 NL1030341C2 (nl) 2008-02-12

Family

ID=36217429

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1030341A NL1030341C2 (nl) 2004-11-05 2005-11-03 Fotoversterkte UV-behandeling van dielektrische films.

Country Status (5)

Country Link
US (1) US20060099827A1 (nl)
JP (1) JP2006135316A (nl)
KR (1) KR20060052438A (nl)
DE (1) DE102005052719A1 (nl)
NL (1) NL1030341C2 (nl)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070026690A1 (en) * 2004-11-05 2007-02-01 Yoo Woo S Selective frequency UV heating of films
US20080132045A1 (en) * 2004-11-05 2008-06-05 Woo Sik Yoo Laser-based photo-enhanced treatment of dielectric, semiconductor and conductive films
KR101782874B1 (ko) * 2012-10-09 2017-09-28 어플라이드 머티어리얼스, 인코포레이티드 인덱싱된 인라인 기판 처리 툴
KR102653233B1 (ko) * 2016-10-25 2024-03-29 삼성전자주식회사 증착 장치 및 이를 이용한 비휘발성 메모리 장치의 제조 방법
US10026620B1 (en) * 2017-06-22 2018-07-17 National Applied Research Laboratories Method of irradiating ultraviolet light on silicon substrate surface for improving quality of native oxide layer and apparatus using the same

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5814644B2 (ja) * 1975-05-14 1983-03-22 松下電器産業株式会社 ヒカリデンソウロノセイゾウホウホウ
US4548688A (en) * 1983-05-23 1985-10-22 Fusion Semiconductor Systems Hardening of photoresist
US4880493A (en) * 1988-06-16 1989-11-14 The United States Of America As Represented By The United States Department Of Energy Electronic-carrier-controlled photochemical etching process in semiconductor device fabrication
US5122440A (en) * 1988-09-06 1992-06-16 Chien Chung Ping Ultraviolet curing of photosensitive polyimides
GB2250751B (en) * 1990-08-24 1995-04-12 Kawasaki Heavy Ind Ltd Process for the production of dielectric thin films
EP0600303B1 (en) * 1992-12-01 2002-02-06 Matsushita Electric Industrial Co., Ltd. Method for fabrication of dielectric thin film
GB2279659B (en) * 1993-07-05 1998-04-22 Merck Patent Gmbh Liquid crystalline material
EP0728125B1 (de) * 1993-11-11 1999-02-24 Grabbe, Klaus, Dr. Verfahren und vorrichtung zur biologischen behandlung von stoffen und/oder stoffgemengen in geschlossenen rottereaktoren
US6607991B1 (en) * 1995-05-08 2003-08-19 Electron Vision Corporation Method for curing spin-on dielectric films utilizing electron beam radiation
JPH0982696A (ja) * 1995-09-18 1997-03-28 Toshiba Corp 半導体装置の製造方法および半導体製造装置
US5846375A (en) * 1996-09-26 1998-12-08 Micron Technology, Inc. Area specific temperature control for electrode plates and chucks used in semiconductor processing equipment
US5711987A (en) * 1996-10-04 1998-01-27 Dow Corning Corporation Electronic coatings
US6090723A (en) * 1997-02-10 2000-07-18 Micron Technology, Inc. Conditioning of dielectric materials
US6284050B1 (en) * 1998-05-18 2001-09-04 Novellus Systems, Inc. UV exposure for improving properties and adhesion of dielectric polymer films formed by chemical vapor deposition
JP3417866B2 (ja) * 1999-03-11 2003-06-16 株式会社東芝 半導体装置およびその製造方法
JP4470274B2 (ja) * 2000-04-26 2010-06-02 東京エレクトロン株式会社 熱処理装置
EP1326271A4 (en) * 2000-09-18 2005-08-24 Tokyo Electron Ltd METHOD FOR FILMING A GATE INSULATOR, DEVICE FOR FILMING A GATE INSULATOR AND A CLUSTER TOOL
US7022530B2 (en) * 2001-04-03 2006-04-04 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
US20030179981A1 (en) * 2002-03-22 2003-09-25 Lnl Technologies,Inc. Tunable inorganic dielectric microresonators
US6743721B2 (en) * 2002-06-10 2004-06-01 United Microelectronics Corp. Method and system for making cobalt silicide
AU2003279020A1 (en) * 2002-09-26 2004-04-19 Rensselaer Polytechnic Institute Analytical instruments for monitoring photopolymerization
JP2004193368A (ja) * 2002-12-11 2004-07-08 Semiconductor Leading Edge Technologies Inc 薄膜形成装置及び薄膜形成方法
JP2004311827A (ja) * 2003-04-09 2004-11-04 Seiko Epson Corp 絶縁膜の形成方法、トランジスタの製造方法、電気光学装置、集積回路、並びに電子機器
JP3910603B2 (ja) * 2004-06-07 2007-04-25 株式会社東芝 熱処理装置、熱処理方法及び半導体装置の製造方法
US7622378B2 (en) * 2005-11-09 2009-11-24 Tokyo Electron Limited Multi-step system and method for curing a dielectric film

Also Published As

Publication number Publication date
US20060099827A1 (en) 2006-05-11
DE102005052719A1 (de) 2006-05-11
KR20060052438A (ko) 2006-05-19
NL1030341C2 (nl) 2008-02-12
JP2006135316A (ja) 2006-05-25

Similar Documents

Publication Publication Date Title
CY2200156T2 (el) Επεξεργασια λυματων
IS8246A (is) Meðferð á taugahrörnunarástandi
DE602005016127D1 (de) Substituierte hydantoine zur krebsbehandlung
ATE527241T1 (de) Pyridiazinonderivate zur behandlung von tumoren
SE0502484L (sv) Behandling av neurodegenerativa tillstånd
NL1029762A1 (nl) Bereiding van gesubstitueerde chinazolinen.
DE502004009761D1 (de) Wasserbehandlungsvorrichtung
IL188746A0 (en) Treatment of cancer
DE602006006354D1 (de) Pinolensäure zur Behandlung von Übergewicht
IL188430A0 (en) Treatment of tumors
NL1025873A1 (nl) Doseringsvormen en wijzen van behandeling met vegfr-remmers.
ATE443704T1 (de) Pyridopyrimidinone zur behandlung von krebserkrankungen
NL1030341A1 (nl) Fotoversterkte UV-behandeling van dielektrische films.
DE602005001010D1 (de) System zur Abwasserbehandlung
IS7970A (is) PDE4-hemlar til að meðhöndla eitlafrumuæxli
NL1029418A1 (nl) Behandeling van koolwaterstoffen.
NO20063114L (no) Enoxaparin for behandling av cancer
ITMI20051107A1 (it) Metodo per il trattamento del cancro
GB0520067D0 (en) Treatment of cancer
DE60328516D1 (de) Thia-epothilon derivate zur krebsbehandlung
GB0408521D0 (en) Treatment of sepsis
DK1824975T3 (da) LNA Oligonukleotider og behandlingen af cancer
GB0410379D0 (en) Treatment of cancer
GB0423273D0 (en) Treatment of cancer
DE602005006343D1 (de) System zur Behandlung von Aneurysmen

Legal Events

Date Code Title Description
AD1A A request for search or an international type search has been filed
RD2N Patents in respect of which a decision has been taken or a report has been made (novelty report)

Effective date: 20071008

PD2B A search report has been drawn up
V1 Lapsed because of non-payment of the annual fee

Effective date: 20100601