NL1013287C2 - Belichtingsinrichting met detector voor gereflecteerd licht, en belichtingswerkwijze die daarvan gebruikmaakt. - Google Patents

Belichtingsinrichting met detector voor gereflecteerd licht, en belichtingswerkwijze die daarvan gebruikmaakt. Download PDF

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Publication number
NL1013287C2
NL1013287C2 NL1013287A NL1013287A NL1013287C2 NL 1013287 C2 NL1013287 C2 NL 1013287C2 NL 1013287 A NL1013287 A NL 1013287A NL 1013287 A NL1013287 A NL 1013287A NL 1013287 C2 NL1013287 C2 NL 1013287C2
Authority
NL
Netherlands
Prior art keywords
reflected light
exposure
layer
image
light detector
Prior art date
Application number
NL1013287A
Other languages
English (en)
Dutch (nl)
Inventor
Teak-Soo Son
Tae-Sin Park
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of NL1013287C2 publication Critical patent/NL1013287C2/nl

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70583—Speckle reduction, e.g. coherence control or amplitude/wavefront splitting

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
NL1013287A 1999-01-08 1999-10-14 Belichtingsinrichting met detector voor gereflecteerd licht, en belichtingswerkwijze die daarvan gebruikmaakt. NL1013287C2 (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019990000246A KR20000050395A (ko) 1999-01-08 1999-01-08 반사광 검출기를 포함하는 노광장치 및 이를 이용한 노광방법
KR19990000246 1999-01-08

Publications (1)

Publication Number Publication Date
NL1013287C2 true NL1013287C2 (nl) 2000-07-11

Family

ID=19570821

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1013287A NL1013287C2 (nl) 1999-01-08 1999-10-14 Belichtingsinrichting met detector voor gereflecteerd licht, en belichtingswerkwijze die daarvan gebruikmaakt.

Country Status (5)

Country Link
JP (1) JP2000208411A (ko)
KR (1) KR20000050395A (ko)
DE (1) DE19950987A1 (ko)
FR (1) FR2788350A1 (ko)
NL (1) NL1013287C2 (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI230390B (en) * 2000-07-11 2005-04-01 Tokyo Electron Ltd Apparatus for determining exposure conditions, method for determining exposure conditions and process apparatus
JP5025250B2 (ja) * 2006-12-15 2012-09-12 キヤノン株式会社 露光装置及びデバイス製造方法
KR101633744B1 (ko) * 2011-08-18 2016-06-27 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 디바이스 제조 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4780747A (en) * 1986-02-07 1988-10-25 Nippon Kogaku K.K. Projection exposure apparatus
EP0451329A2 (en) * 1990-04-13 1991-10-16 Hitachi, Ltd. Controlling method of forming thin film, system for said controlling method, exposure method and system for said exposure method
US5363171A (en) * 1993-07-29 1994-11-08 The United States Of America As Represented By The Director, National Security Agency Photolithography exposure tool and method for in situ photoresist measurments and exposure control

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4780747A (en) * 1986-02-07 1988-10-25 Nippon Kogaku K.K. Projection exposure apparatus
EP0451329A2 (en) * 1990-04-13 1991-10-16 Hitachi, Ltd. Controlling method of forming thin film, system for said controlling method, exposure method and system for said exposure method
US5363171A (en) * 1993-07-29 1994-11-08 The United States Of America As Represented By The Director, National Security Agency Photolithography exposure tool and method for in situ photoresist measurments and exposure control

Also Published As

Publication number Publication date
FR2788350A1 (fr) 2000-07-13
JP2000208411A (ja) 2000-07-28
DE19950987A1 (de) 2000-07-13
KR20000050395A (ko) 2000-08-05

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Effective date: 20040501