NL1008236A1 - Halfgeleiderinrichting. - Google Patents
Halfgeleiderinrichting.Info
- Publication number
- NL1008236A1 NL1008236A1 NL1008236A NL1008236A NL1008236A1 NL 1008236 A1 NL1008236 A1 NL 1008236A1 NL 1008236 A NL1008236 A NL 1008236A NL 1008236 A NL1008236 A NL 1008236A NL 1008236 A1 NL1008236 A1 NL 1008236A1
- Authority
- NL
- Netherlands
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP03225997A JP3799714B2 (ja) | 1997-02-17 | 1997-02-17 | 半導体装置 |
JP3225997 | 1997-02-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
NL1008236A1 true NL1008236A1 (nl) | 1998-08-18 |
NL1008236C2 NL1008236C2 (nl) | 2000-05-09 |
Family
ID=12354022
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL1008236A NL1008236C2 (nl) | 1997-02-17 | 1998-02-06 | Halfgeleiderinrichting. |
Country Status (6)
Country | Link |
---|---|
US (1) | US6002144A (nl) |
JP (1) | JP3799714B2 (nl) |
KR (1) | KR100500854B1 (nl) |
DE (1) | DE19806555A1 (nl) |
NL (1) | NL1008236C2 (nl) |
TW (1) | TW411630B (nl) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4615884B2 (ja) * | 2004-03-23 | 2011-01-19 | 川崎マイクロエレクトロニクス株式会社 | アンチヒューズ素子 |
JP4833525B2 (ja) * | 2004-06-25 | 2011-12-07 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US20060065891A1 (en) * | 2004-09-30 | 2006-03-30 | Mccormack Steve | Zener zap diode structure compatible with tungsten plug technology |
US9172239B2 (en) | 2013-03-15 | 2015-10-27 | Fairchild Semiconductor Corporation | Methods and apparatus related to a precision input power protection device |
US9735147B2 (en) | 2014-09-15 | 2017-08-15 | Fairchild Semiconductor Corporation | Fast and stable ultra low drop-out (LDO) voltage clamp device |
US10845395B2 (en) | 2018-02-08 | 2020-11-24 | Honeywell International Inc. | Intrinsically safe Zener diode barrier with indication |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1583248A (nl) * | 1968-06-27 | 1969-10-24 | ||
IN144488B (nl) * | 1974-02-11 | 1978-05-06 | Rca Corp | |
US4051504A (en) * | 1975-10-14 | 1977-09-27 | General Motors Corporation | Ion implanted zener diode |
JPS546480A (en) * | 1977-06-16 | 1979-01-18 | Nippon Denso Co Ltd | Semiconductor device |
JPS5450277A (en) * | 1977-09-27 | 1979-04-20 | Nec Corp | Semiconductor device |
JPS6194378A (ja) * | 1984-10-15 | 1986-05-13 | Toshiba Corp | 半導体装置 |
JPS61226971A (ja) * | 1985-03-30 | 1986-10-08 | Toshiba Corp | 半導体装置 |
JPS6221279A (ja) * | 1985-07-19 | 1987-01-29 | Sanyo Electric Co Ltd | ツエナ−ダイオ−ド |
US4978636A (en) * | 1989-12-26 | 1990-12-18 | Motorola Inc. | Method of making a semiconductor diode |
JPH042171A (ja) * | 1990-04-19 | 1992-01-07 | Sanyo Electric Co Ltd | 半導体集積回路 |
US5648678A (en) * | 1994-09-21 | 1997-07-15 | Harris Corporation | Programmable element in barrier metal device |
-
1997
- 1997-02-17 JP JP03225997A patent/JP3799714B2/ja not_active Expired - Fee Related
-
1998
- 1998-02-04 TW TW087101382A patent/TW411630B/zh not_active IP Right Cessation
- 1998-02-06 NL NL1008236A patent/NL1008236C2/nl not_active IP Right Cessation
- 1998-02-09 US US09/020,894 patent/US6002144A/en not_active Expired - Fee Related
- 1998-02-14 KR KR10-1998-0004443A patent/KR100500854B1/ko not_active IP Right Cessation
- 1998-02-17 DE DE19806555A patent/DE19806555A1/de not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
DE19806555A1 (de) | 1998-08-20 |
KR100500854B1 (ko) | 2005-10-14 |
JP3799714B2 (ja) | 2006-07-19 |
NL1008236C2 (nl) | 2000-05-09 |
TW411630B (en) | 2000-11-11 |
KR19980071353A (ko) | 1998-10-26 |
US6002144A (en) | 1999-12-14 |
JPH10229204A (ja) | 1998-08-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
AD1A | A request for search or an international type search has been filed | ||
RD2N | Patents in respect of which a decision has been taken or a report has been made (novelty report) |
Effective date: 20000308 |
|
PD2B | A search report has been drawn up | ||
VD1 | Lapsed due to non-payment of the annual fee |
Effective date: 20060901 |