NL1008236A1 - Halfgeleiderinrichting. - Google Patents

Halfgeleiderinrichting.

Info

Publication number
NL1008236A1
NL1008236A1 NL1008236A NL1008236A NL1008236A1 NL 1008236 A1 NL1008236 A1 NL 1008236A1 NL 1008236 A NL1008236 A NL 1008236A NL 1008236 A NL1008236 A NL 1008236A NL 1008236 A1 NL1008236 A1 NL 1008236A1
Authority
NL
Netherlands
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
NL1008236A
Other languages
English (en)
Other versions
NL1008236C2 (nl
Inventor
Tetsuya Oishi
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of NL1008236A1 publication Critical patent/NL1008236A1/nl
Application granted granted Critical
Publication of NL1008236C2 publication Critical patent/NL1008236C2/nl

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861Diodes
    • H01L29/866Zener diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
NL1008236A 1997-02-17 1998-02-06 Halfgeleiderinrichting. NL1008236C2 (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP03225997A JP3799714B2 (ja) 1997-02-17 1997-02-17 半導体装置
JP3225997 1997-02-17

Publications (2)

Publication Number Publication Date
NL1008236A1 true NL1008236A1 (nl) 1998-08-18
NL1008236C2 NL1008236C2 (nl) 2000-05-09

Family

ID=12354022

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1008236A NL1008236C2 (nl) 1997-02-17 1998-02-06 Halfgeleiderinrichting.

Country Status (6)

Country Link
US (1) US6002144A (nl)
JP (1) JP3799714B2 (nl)
KR (1) KR100500854B1 (nl)
DE (1) DE19806555A1 (nl)
NL (1) NL1008236C2 (nl)
TW (1) TW411630B (nl)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4615884B2 (ja) * 2004-03-23 2011-01-19 川崎マイクロエレクトロニクス株式会社 アンチヒューズ素子
JP4833525B2 (ja) * 2004-06-25 2011-12-07 ルネサスエレクトロニクス株式会社 半導体装置
US20060065891A1 (en) * 2004-09-30 2006-03-30 Mccormack Steve Zener zap diode structure compatible with tungsten plug technology
US9172239B2 (en) 2013-03-15 2015-10-27 Fairchild Semiconductor Corporation Methods and apparatus related to a precision input power protection device
US9735147B2 (en) 2014-09-15 2017-08-15 Fairchild Semiconductor Corporation Fast and stable ultra low drop-out (LDO) voltage clamp device
US10845395B2 (en) 2018-02-08 2020-11-24 Honeywell International Inc. Intrinsically safe Zener diode barrier with indication

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1583248A (nl) * 1968-06-27 1969-10-24
IN144488B (nl) * 1974-02-11 1978-05-06 Rca Corp
US4051504A (en) * 1975-10-14 1977-09-27 General Motors Corporation Ion implanted zener diode
JPS546480A (en) * 1977-06-16 1979-01-18 Nippon Denso Co Ltd Semiconductor device
JPS5450277A (en) * 1977-09-27 1979-04-20 Nec Corp Semiconductor device
JPS6194378A (ja) * 1984-10-15 1986-05-13 Toshiba Corp 半導体装置
JPS61226971A (ja) * 1985-03-30 1986-10-08 Toshiba Corp 半導体装置
JPS6221279A (ja) * 1985-07-19 1987-01-29 Sanyo Electric Co Ltd ツエナ−ダイオ−ド
US4978636A (en) * 1989-12-26 1990-12-18 Motorola Inc. Method of making a semiconductor diode
JPH042171A (ja) * 1990-04-19 1992-01-07 Sanyo Electric Co Ltd 半導体集積回路
US5648678A (en) * 1994-09-21 1997-07-15 Harris Corporation Programmable element in barrier metal device

Also Published As

Publication number Publication date
DE19806555A1 (de) 1998-08-20
KR100500854B1 (ko) 2005-10-14
JP3799714B2 (ja) 2006-07-19
NL1008236C2 (nl) 2000-05-09
TW411630B (en) 2000-11-11
KR19980071353A (ko) 1998-10-26
US6002144A (en) 1999-12-14
JPH10229204A (ja) 1998-08-25

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Legal Events

Date Code Title Description
AD1A A request for search or an international type search has been filed
RD2N Patents in respect of which a decision has been taken or a report has been made (novelty report)

Effective date: 20000308

PD2B A search report has been drawn up
VD1 Lapsed due to non-payment of the annual fee

Effective date: 20060901