NL1007390C2 - Hoogvermogen diodenlaser en werkwijze voor het monteren daarvan. - Google Patents

Hoogvermogen diodenlaser en werkwijze voor het monteren daarvan. Download PDF

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Publication number
NL1007390C2
NL1007390C2 NL1007390A NL1007390A NL1007390C2 NL 1007390 C2 NL1007390 C2 NL 1007390C2 NL 1007390 A NL1007390 A NL 1007390A NL 1007390 A NL1007390 A NL 1007390A NL 1007390 C2 NL1007390 C2 NL 1007390C2
Authority
NL
Netherlands
Prior art keywords
laser
solder
laser rod
rod
power diode
Prior art date
Application number
NL1007390A
Other languages
English (en)
Dutch (nl)
Other versions
NL1007390A1 (nl
Inventor
Stefan Heinemann
Friedhelm Dorsch
Rainer Dohle
Dirk Lorenzen
Franz Daiminger
Original Assignee
Jenoptik Jena Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jenoptik Jena Gmbh filed Critical Jenoptik Jena Gmbh
Publication of NL1007390A1 publication Critical patent/NL1007390A1/xx
Application granted granted Critical
Publication of NL1007390C2 publication Critical patent/NL1007390C2/nl

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0213—Sapphire, quartz or diamond based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
NL1007390A 1996-10-29 1997-10-29 Hoogvermogen diodenlaser en werkwijze voor het monteren daarvan. NL1007390C2 (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19644941A DE19644941C1 (de) 1996-10-29 1996-10-29 Hochleistungsdiodenlaser und Verfahren zu dessen Montage
DE19644941 1996-10-29

Publications (2)

Publication Number Publication Date
NL1007390A1 NL1007390A1 (nl) 1998-05-06
NL1007390C2 true NL1007390C2 (nl) 2001-11-29

Family

ID=7810316

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1007390A NL1007390C2 (nl) 1996-10-29 1997-10-29 Hoogvermogen diodenlaser en werkwijze voor het monteren daarvan.

Country Status (8)

Country Link
US (1) US5920584A (it)
JP (1) JPH10135538A (it)
CA (1) CA2216487A1 (it)
DE (1) DE19644941C1 (it)
FR (1) FR2755308B1 (it)
GB (1) GB2318911B (it)
IT (1) IT1295758B1 (it)
NL (1) NL1007390C2 (it)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6424667B1 (en) * 1998-12-04 2002-07-23 Jds Uniphase Corporation Solder and material designs to improve resistance to cycling fatigue in laser diode stacks
DE10011892A1 (de) * 2000-03-03 2001-09-20 Jenoptik Jena Gmbh Montagesubstrat und Wärmesenke für Hochleistungsdiodenlaserbarren
DE10040450B4 (de) 2000-08-18 2008-07-10 Osram Opto Semiconductors Gmbh Halbleiterlaserbauelement mit einem Kühlelement
CN1326298C (zh) * 2005-06-29 2007-07-11 武汉电信器件有限公司 一种提高半导体激光器成品率的方法
DE102009009521A1 (de) * 2009-02-18 2010-08-19 Osram Opto Semiconductors Gmbh Halbleiterlaser und Verfahren zur Herstellung eines Halbleiterlasers
DE102009016953B4 (de) 2009-04-08 2017-03-09 Dirk Lorenzen Konversionseinheit mit mehreren Konversionsmodulen, Inbetriebnahmeverfahren der Konversionseinheit und eine solche Konversionseinheit aufweisende optische Anordnung
DE102012112531A1 (de) * 2012-12-18 2014-06-18 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von Halbleiter-Laserelementen und Halbleiter-Laserelement
WO2015091117A1 (en) * 2013-12-20 2015-06-25 Koninklijke Philips N.V. Laser module with simplified alignment
US10186833B2 (en) 2015-02-18 2019-01-22 Ii-Vi Incorporated Densely-spaced laser diode configurations
DE102016103358A1 (de) 2016-02-25 2017-08-31 Osram Opto Semiconductors Gmbh Laserbarren mit gräben

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58137282A (ja) * 1982-02-10 1983-08-15 Oki Electric Ind Co Ltd レ−ザダイオ−ドの製造方法
JPS62272583A (ja) * 1986-05-20 1987-11-26 Oki Electric Ind Co Ltd 半導体レ−ザ素子の分離方法
US4904617A (en) * 1987-09-17 1990-02-27 Siemens Aktiengesellschaft Method for separating monolithically produced laser diodes
JPH03250687A (ja) * 1990-01-16 1991-11-08 Fuji Electric Co Ltd 半導体レーザ素子チップの製造方法
EP0714126A1 (en) * 1994-11-23 1996-05-29 AT&T Corp. Compliant layer metallization

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3946334A (en) * 1973-11-14 1976-03-23 Nippon Electric Company, Limited Injection semiconductor laser device
JPS52116185A (en) * 1976-03-26 1977-09-29 Hitachi Ltd Mesa-type semiconductor laser
DE3435306A1 (de) * 1984-09-26 1986-04-03 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung von laserdioden mit jutierter integrierter waermesenke
US4887736A (en) * 1988-04-22 1989-12-19 Cleveland Container Corporation Sealed container

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58137282A (ja) * 1982-02-10 1983-08-15 Oki Electric Ind Co Ltd レ−ザダイオ−ドの製造方法
JPS62272583A (ja) * 1986-05-20 1987-11-26 Oki Electric Ind Co Ltd 半導体レ−ザ素子の分離方法
US4904617A (en) * 1987-09-17 1990-02-27 Siemens Aktiengesellschaft Method for separating monolithically produced laser diodes
JPH03250687A (ja) * 1990-01-16 1991-11-08 Fuji Electric Co Ltd 半導体レーザ素子チップの製造方法
EP0714126A1 (en) * 1994-11-23 1996-05-29 AT&T Corp. Compliant layer metallization

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 007, no. 251 (E - 209) 8 November 1983 (1983-11-08) *
PATENT ABSTRACTS OF JAPAN vol. 012, no. 158 (E - 608) 13 May 1988 (1988-05-13) *
PATENT ABSTRACTS OF JAPAN vol. 016, no. 045 (E - 1162) 5 February 1992 (1992-02-05) *
WEISS S ET AL: "MOUNTING OF HIGH POWER LASER DIODES ON DIAMOND HEATSINKS", IEEE TRANSACTIONS ON COMPONENTS, PACKAGING AND MANUFACTURING TECHNOLOGY: PART A, IEEE SERVICE CENTER, PISCATAWAY, NJ, US, vol. 19, no. 1, 1 March 1996 (1996-03-01), pages 46 - 53, XP000557916, ISSN: 1070-9886 *

Also Published As

Publication number Publication date
IT1295758B1 (it) 1999-05-27
US5920584A (en) 1999-07-06
DE19644941C1 (de) 1998-01-15
FR2755308B1 (fr) 2002-10-04
CA2216487A1 (en) 1998-04-29
ITTO970921A1 (it) 1999-04-22
FR2755308A1 (fr) 1998-04-30
GB2318911B (en) 2001-08-08
NL1007390A1 (nl) 1998-05-06
GB9722657D0 (en) 1997-12-24
GB2318911A (en) 1998-05-06
JPH10135538A (ja) 1998-05-22

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Effective date: 20010927

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Effective date: 20040501