NL1000264C2 - Solar cell with multilayer structure of thin films of silicon. - Google Patents

Solar cell with multilayer structure of thin films of silicon.

Info

Publication number
NL1000264C2
NL1000264C2 NL1000264A NL1000264A NL1000264C2 NL 1000264 C2 NL1000264 C2 NL 1000264C2 NL 1000264 A NL1000264 A NL 1000264A NL 1000264 A NL1000264 A NL 1000264A NL 1000264 C2 NL1000264 C2 NL 1000264C2
Authority
NL
Netherlands
Prior art keywords
layers
silicon
type
solar cell
amorphous silicon
Prior art date
Application number
NL1000264A
Other languages
Dutch (nl)
Inventor
Frans Willem Saris
Original Assignee
Frans Willem Saris
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Frans Willem Saris filed Critical Frans Willem Saris
Priority to NL1000264A priority Critical patent/NL1000264C2/en
Priority to TW084104368A priority patent/TW280951B/en
Priority to EP96911113A priority patent/EP0826242A1/en
Priority to AU54094/96A priority patent/AU5409496A/en
Priority to PCT/NL1996/000177 priority patent/WO1996035235A1/en
Application granted granted Critical
Publication of NL1000264C2 publication Critical patent/NL1000264C2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
    • H01L31/076—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0465—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Abstract

Solar cell, comprising at least three substantially thin film parallel silicon layers, stacked upon each other, and at least two conductors providing an electrical contact with at least two of said layers, said conductors extending in a direction substantially transverse with respect to said layers, wherein the thin film layers are provided by amorphous silicon of the p-type (p-Si), intrinsic amorphous silicon (i-Si) and amorphous silicon of the n-type (n-Si) respectively, in the order given by the formula (I): p-Si, (i-Si, n-Si, i-Si, p-Si)x, i-Si, n-Si, where preferably 0</=x</=5, the amorphous silicon is hydrogenated in a concentration in the range of about 1 at.% - about 10 at.% relative to Si, preferably in a concentration of about 1 at.% relative to Si, one of said conductors provides an electrical contact with each of said p-Si layers and the other of said conductors provides an electrical contact with each of said n-Si layers. A certain amount of crystalline silicon of the p-type is provided within a p-Si layer, and a certain amount of crystalline silicon of the n-type is provided within an n-Si layer.
NL1000264A 1995-05-01 1995-05-01 Solar cell with multilayer structure of thin films of silicon. NL1000264C2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
NL1000264A NL1000264C2 (en) 1995-05-01 1995-05-01 Solar cell with multilayer structure of thin films of silicon.
TW084104368A TW280951B (en) 1995-05-01 1995-05-02 Solar cell having a thin film silicon multilayer structure
EP96911113A EP0826242A1 (en) 1995-05-01 1996-04-23 Solar cell having a thin film silicon multiple layer structure
AU54094/96A AU5409496A (en) 1995-05-01 1996-04-23 Solar cell having a thin film silicon multiple layer structu re
PCT/NL1996/000177 WO1996035235A1 (en) 1995-05-01 1996-04-23 Solar cell having a thin film silicon multiple layer structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL1000264A NL1000264C2 (en) 1995-05-01 1995-05-01 Solar cell with multilayer structure of thin films of silicon.

Publications (1)

Publication Number Publication Date
NL1000264C2 true NL1000264C2 (en) 1996-11-04

Family

ID=19760958

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1000264A NL1000264C2 (en) 1995-05-01 1995-05-01 Solar cell with multilayer structure of thin films of silicon.

Country Status (5)

Country Link
EP (1) EP0826242A1 (en)
AU (1) AU5409496A (en)
NL (1) NL1000264C2 (en)
TW (1) TW280951B (en)
WO (1) WO1996035235A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010026289B4 (en) * 2010-07-06 2014-10-30 Sameday Media Gmbh Solar cell and process

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2083705A (en) * 1980-09-09 1982-03-24 Energy Conversion Devices Inc Stacked photoresponsive cells of amorphous semiconductors
FR2598033A1 (en) * 1984-10-29 1987-10-30 Mitsubishi Electric Corp AMORPHOUS SOLAR CELL
WO1993012543A1 (en) * 1991-12-09 1993-06-24 Unisearch Limited Buried contact, interconnected thin film and bulk photovoltaic cells
US5338370A (en) * 1991-05-07 1994-08-16 Canon Kabushiki Kaisha Photovoltaic device
WO1995027314A1 (en) * 1994-03-31 1995-10-12 Pacific Solar Pty. Limited Multiple layer thin film solar cells with buried contacts

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2083705A (en) * 1980-09-09 1982-03-24 Energy Conversion Devices Inc Stacked photoresponsive cells of amorphous semiconductors
FR2598033A1 (en) * 1984-10-29 1987-10-30 Mitsubishi Electric Corp AMORPHOUS SOLAR CELL
US5338370A (en) * 1991-05-07 1994-08-16 Canon Kabushiki Kaisha Photovoltaic device
WO1993012543A1 (en) * 1991-12-09 1993-06-24 Unisearch Limited Buried contact, interconnected thin film and bulk photovoltaic cells
WO1995027314A1 (en) * 1994-03-31 1995-10-12 Pacific Solar Pty. Limited Multiple layer thin film solar cells with buried contacts

Also Published As

Publication number Publication date
AU5409496A (en) 1996-11-21
EP0826242A1 (en) 1998-03-04
WO1996035235A1 (en) 1996-11-07
TW280951B (en) 1996-07-11

Similar Documents

Publication Publication Date Title
Segura et al. Photovoltaic efficiency of InSe solar cells
WO2009069582A1 (en) Laminated structure for cis-family solar cell, and integrated structure and manufacturing method for cis-family thin-film solar cell
KR970702586A (en) MULTIPLELAYER THIN FILM SOLAR CELLS WITH BURIED CONTACTS
KR950704818A (en) SOLAR CELL MODULE HAVING A SURFACE COATING MATERIAL OF THEREE-LAYERED STRUCTURE
EP1705717A4 (en) Fuel cell and method for producing same
GB2434696A (en) Method of preparing opto-electronic device
JPS6453583A (en) Manufacture of series connection array thin film solar battery
ES476675A1 (en) Three-layer semiconductor diode and its application.
ATE308801T1 (en) P-TYPE SEMICONDUCTOR, METHOD FOR PRODUCING THE SAME, SEMICONDUCTOR ARRANGEMENT, PHOTOVOLTAIC COMPONENT, AND METHOD FOR PRODUCING A SEMICONDUCTOR ARRANGEMENT
NL1000264C2 (en) Solar cell with multilayer structure of thin films of silicon.
JPH0693519B2 (en) Amorphous photoelectric conversion device
US20130255745A1 (en) Thin layered solar module having a composite wafer structure
CN114156364A (en) Preparation method of CdTe power generation glass and charging control system
JPS5694674A (en) Thin-film solar cell
JPS5745980A (en) Amorphous solar battery and manufacture thereof
Utsunomiya et al. Effect of mechanical strain on electrical characteristics of hydrogenated amorphous silicon junctions
JPS57138184A (en) Solar cell device
JPH0586677B2 (en)
JPS6152992B2 (en)
JPS6459966A (en) Laminated multilayer amorphous solar cell
JPS6441278A (en) Manufacture of thin film photovoltaic element
JPS5658280A (en) Solar cell
JPS59181581A (en) Photoelectric converter
JPS5789265A (en) Photo electromotive element
JPS6461955A (en) Thin film transistor

Legal Events

Date Code Title Description
PD2B A search report has been drawn up
VD1 Lapsed due to non-payment of the annual fee

Effective date: 20001201