WO1996035235A1 - Solar cell having a thin film silicon multiple layer structure - Google Patents

Solar cell having a thin film silicon multiple layer structure Download PDF

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Publication number
WO1996035235A1
WO1996035235A1 PCT/NL1996/000177 NL9600177W WO9635235A1 WO 1996035235 A1 WO1996035235 A1 WO 1996035235A1 NL 9600177 W NL9600177 W NL 9600177W WO 9635235 A1 WO9635235 A1 WO 9635235A1
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WO
WIPO (PCT)
Prior art keywords
solar cell
layers
cell according
thin film
type
Prior art date
Application number
PCT/NL1996/000177
Other languages
French (fr)
Inventor
Frans Willem Saris
Original Assignee
Stichting Energieonderzoek Centrum Nederland
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stichting Energieonderzoek Centrum Nederland filed Critical Stichting Energieonderzoek Centrum Nederland
Priority to EP96911113A priority Critical patent/EP0826242A1/en
Priority to AU54094/96A priority patent/AU5409496A/en
Publication of WO1996035235A1 publication Critical patent/WO1996035235A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
    • H01L31/076—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0465—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Definitions

  • the invention relates to a solar cell, comprising at least three substantially thin film parallel silicon layers, stacked upon each other, and at least two conductors providing an electrical contact with at least two of said layers, said conductors extending in a direction substantially transverse with respect to said layers.
  • a solar cell of the above mentioned type has been disclosed in WO 93/12543, which teaches the deposition of thin film silicon layers from solution in molten metal or other known techniques onto supporting glass superstrate. These techniques imply the formation of thin films of crystalline silicon.
  • the thin film layers comprise amorphous silicon (a-Si) .
  • a solar cell according to the invention involves many advantages over the prior art crystalline silicon solar cell, in that its manufacturing by thin film depostion allows inter alia a wide area at a low material consumption, processing at low temperatures, p-n doping and alloying control during deposition, deposition on inexpensive substrates of different kind and shape, easy integrated manufacturing and mass production at low cost.
  • the thickness of an amorphous silicon thin film solar cell according to the invention is an order of magnitude less than the thickness of a known device having a similar energy efficiency, but using crystalline silicon.
  • the mechanical strength of the solar cell according to the invention is superior over the mechanical strength of the known solar cell.
  • the thin film layers are provided by amorphous silicon of the p-type (p-Si) , intrinsic amorphous silicon (i-Si) and amorphous silicon of the n-type (n-Si) respectively, in the order given by the formula (I) : p-Si, (i-Si,n-Si,i-Si,p-Si) x ,i-Si,n-Si (I), where x is the number 0 or a natural number, preferably 0__x ⁇ _5, one of said conductors provides an electrical contact with each of said p-Si layers and the other of said conductors provides an electrical contact with each of said n-Si layers.
  • the structure of this embodiment consists of multiple interleaved parallel layers, thus greatly increasing the collection probability for carriers generated by the absorption of light. If the spacings between the layer junctions are properly chosen, the collection probability for all generated carriers approaches unity.
  • each a-Si layer is less than carrier collection length in said each layer.
  • carrier injection between the layers will advantageously then result in sharing of current between the layers, as the multiple interleaved layers of n-Si and p- Si provide parallel paths for current conduction between contacts, thus reducing resistive losses.
  • a certain amount of crystalline silicon of the p-type may be provided within a p- Si layer, and/or a certain amount of crystalline silicon of the n-type is provided within an n-Si layer.
  • the amount of p-type and/or n-type crystalline silicon may just be as little to provide small areas of finite dimensions, comprising micro-crystalline silicon, or as much as to provide an intermediate layer of crystalline silicon within the respective amorphous layer.
  • the a-Si is hydrogenated.
  • a-Si:H Hydrogenated a-Si
  • the spectral response in a-Si is superior over many other solar cell materials, whereas majority and minority carrier lifetimes have been found to be at least 10 ns. Therefore, a multiple layer a-Si solar cell yields a relatively high efficiency in comparison with prior art solar cells, without additional light trapping.
  • the a-Si may be alloyed with a material selected from germanium (Ge) , carbon (C) and a combination of said materials.
  • the a-Si layers may be intrinsic or doped with electrically or optically active impurities, chosen to optimize the response of the cell to the solar spectrum.
  • An embodiment of a solar cell according to the invention comprises e.g. a substrate or a superstrate for the thin film silicon layers and a covering toplayer or bottomlayer respectively.
  • Substrate or superstrate and toplayer or bottomlayer respectively may be provided in a way per se known, whereby at least the substrate or the superstrate, or respectively the toplayer or the bottomlayer is transparant, or whereby substrate and toplayer or superstrate and bottomlayer respectively are both transparant.
  • n-type busbar for one cell By making an n-type busbar for one cell very close to a p- type busbar groove for an adjacent cell, two regions can be linked during metallization. This provides automatic series interconnection of adjacent a-Si cells, eliminating interconnects and subsequent soldering other than the output leads. Two adjacent grooves may actually overlap, forming one wider groove with side walls oppositely doped. In this case, filling the groove with metal again automatically provides the series connection.
  • Fig. 1 shows a schematic cross section of a first embodiment of an a-Si:H multilayer solar cell according to the invention
  • Fig. 2 shows a schematic cross section of a second embodiment of an a-Si:H multilayer solar cell according to the invention.
  • Fig.l shows a multiple solar cell 1, comprising interleaved parallel layers 2,3,4 of intrinsic hydrogenated amorphous silicon (i-Si), each said layer 2,3,4 being bound by a layer 5,6 of hydrogenated amorphous n-type silicon (n- Si) and a layer 7,8 of hydrogenated amorphous p-type silicon (p-Si) .
  • i-Si intrinsic hydrogenated amorphous silicon
  • p-Si hydrogenated amorphous p-type silicon
  • Carriers generated by incident light in the intrinsic layers 2-3 drift towards the the n-Si layers 5,6 or the p-Si layers 7,8 respectively, depending on their sign, and are transported via the respective layers 5-8 towards the metal contacts 13,14, which thus can provide a photo-current to a circuit connected (not shown) .
  • the solar cell 1 has been extended in the direction of the layers in a repeating pattern, such as to provide upon a single substrate (not shown) a multiple solar cell, the contacts of which are electrically connected in series.
  • the solar cell 1 may easily be extended in a direction transverse with respect to the layers by repeating the sequence of four consecutively stacked layers of amorphous silicon.
  • Fig. 2 shows another embodiment of a multiple solar cell 21 according to the invention.
  • This cell 21 has in general the the same configuration as the solar cell 1 shown in fig. 1. Corresponding members have been indicated by corresponding reference signs.
  • the advantage of the configuration of cell 21 shown in fig. 2 is the formation within the current transporting amorphous n-Si and p-Si layers 5,6 and 7,8 of small layers of corresponding micro-cristalline silicon 25,26 and 27,28 respectively, thus considerably reducing the resistance of these layers.
  • a further reduction of resistance in the cell 21 has been attained by the doping of the groove walls 10,12 and 9,11 with micro-crystalline n-type silicon 35 and p-type silicon 36 respectively.

Abstract

Solar cell, comprising at least three substantially thin film parallel silicon layers, stacked upon each other, and at least two conductors providing an electrical contact with at least two of said layers, said conductors extending in a direction substantially transverse with respect to said layers, wherein the thin film layers are provided by amorphous silicon of the p-type (p-Si), intrinsic amorphous silicon (i-Si) and amorphous silicon of the n-type (n-Si) respectively, in the order given by the formula (I): p-Si, (i-Si, n-Si, i-Si, p-Si)x, i-Si, n-Si, where preferably 0≤x≤5, the amorphous silicon is hydrogenated in a concentration in the range of about 1 at.% - about 10 at.% relative to Si, preferably in a concentration of about 1 at.% relative to Si, one of said conductors provides an electrical contact with each of said p-Si layers and the other of said conductors provides an electrical contact with each of said n-Si layers. A certain amount of crystalline silicon of the p-type is provided within a p-Si layer, and a certain amount of crystalline silicon of the n-type is provided within an n-Si layer.

Description

SOLAR CELL HAVING A THIN FILM SILICON MULTIPLE LAYER STRUCTURE
The invention relates to a solar cell, comprising at least three substantially thin film parallel silicon layers, stacked upon each other, and at least two conductors providing an electrical contact with at least two of said layers, said conductors extending in a direction substantially transverse with respect to said layers.
A solar cell of the above mentioned type has been disclosed in WO 93/12543, which teaches the deposition of thin film silicon layers from solution in molten metal or other known techniques onto supporting glass superstrate. These techniques imply the formation of thin films of crystalline silicon.
It is a disadvantage of the known solar cell that its thickness is relatively large, in order to provide a sufficient volume to absorb incident light. Moreover, the materials forming the layers of the known solar cell have a poor mechanical strength, giving rise to additional requirements in construction and design and accompanying additional production costs. It is a purpose of the invention to provide a solar cell of the above mentioned type, in which the above and other disadvantages of the known thin film silicon solar cells are overcome.
This purpose is reached in a solar cell of the type mentioned above, wherein the thin film layers comprise amorphous silicon (a-Si) .
A solar cell according to the invention involves many advantages over the prior art crystalline silicon solar cell, in that its manufacturing by thin film depostion allows inter alia a wide area at a low material consumption, processing at low temperatures, p-n doping and alloying control during deposition, deposition on inexpensive substrates of different kind and shape, easy integrated manufacturing and mass production at low cost. The thickness of an amorphous silicon thin film solar cell according to the invention is an order of magnitude less than the thickness of a known device having a similar energy efficiency, but using crystalline silicon. Moreover, the mechanical strength of the solar cell according to the invention is superior over the mechanical strength of the known solar cell. In an embodiment of a solar cell according to the invention the thin film layers are provided by amorphous silicon of the p-type (p-Si) , intrinsic amorphous silicon (i-Si) and amorphous silicon of the n-type (n-Si) respectively, in the order given by the formula (I) : p-Si, (i-Si,n-Si,i-Si,p-Si)x,i-Si,n-Si (I), where x is the number 0 or a natural number, preferably 0__x<_5, one of said conductors provides an electrical contact with each of said p-Si layers and the other of said conductors provides an electrical contact with each of said n-Si layers.
If x is unequal to 0, the structure of this embodiment consists of multiple interleaved parallel layers, thus greatly increasing the collection probability for carriers generated by the absorption of light. If the spacings between the layer junctions are properly chosen, the collection probability for all generated carriers approaches unity.
In a further embodiment, the thickness of each a-Si layer is less than carrier collection length in said each layer. In such an embodiment, carrier injection between the layers will advantageously then result in sharing of current between the layers, as the multiple interleaved layers of n-Si and p- Si provide parallel paths for current conduction between contacts, thus reducing resistive losses.
In order to further improve the conductivity of the parallel paths between the contacts, a certain amount of crystalline silicon of the p-type may be provided within a p- Si layer, and/or a certain amount of crystalline silicon of the n-type is provided within an n-Si layer.
The amount of p-type and/or n-type crystalline silicon may just be as little to provide small areas of finite dimensions, comprising micro-crystalline silicon, or as much as to provide an intermediate layer of crystalline silicon within the respective amorphous layer.
Preferably, in a solar cell according to the invention the a-Si is hydrogenated. (Hydrogenated a-Si is denoted below by a-Si:H) . Addition of hydrogen to the a-Si, for example in a concentration in the range of about 1 at.% - about 10 at.% relative to Si, preferably in a concentration of about 1 at.% relative to Si, results in formation of SiH-bonds, thus rendering the dangling bonds in a-Si inactive. As a result, the spectral response in a-Si is superior over many other solar cell materials, whereas majority and minority carrier lifetimes have been found to be at least 10 ns. Therefore, a multiple layer a-Si solar cell yields a relatively high efficiency in comparison with prior art solar cells, without additional light trapping.
In addition, the a-Si may be alloyed with a material selected from germanium (Ge) , carbon (C) and a combination of said materials. The a-Si layers may be intrinsic or doped with electrically or optically active impurities, chosen to optimize the response of the cell to the solar spectrum.
An embodiment of a solar cell according to the invention comprises e.g. a substrate or a superstrate for the thin film silicon layers and a covering toplayer or bottomlayer respectively. Substrate or superstrate and toplayer or bottomlayer respectively may be provided in a way per se known, whereby at least the substrate or the superstrate, or respectively the toplayer or the bottomlayer is transparant, or whereby substrate and toplayer or superstrate and bottomlayer respectively are both transparant.
By making an n-type busbar for one cell very close to a p- type busbar groove for an adjacent cell, two regions can be linked during metallization. This provides automatic series interconnection of adjacent a-Si cells, eliminating interconnects and subsequent soldering other than the output leads. Two adjacent grooves may actually overlap, forming one wider groove with side walls oppositely doped. In this case, filling the groove with metal again automatically provides the series connection.
The invention will now be illustrated by means of reference to the accompanying drawings.
Fig. 1 shows a schematic cross section of a first embodiment of an a-Si:H multilayer solar cell according to the invention, and Fig. 2 shows a schematic cross section of a second embodiment of an a-Si:H multilayer solar cell according to the invention.
Fig.l shows a multiple solar cell 1, comprising interleaved parallel layers 2,3,4 of intrinsic hydrogenated amorphous silicon (i-Si), each said layer 2,3,4 being bound by a layer 5,6 of hydrogenated amorphous n-type silicon (n- Si) and a layer 7,8 of hydrogenated amorphous p-type silicon (p-Si) . Transverse with respect to the planes of the layers 2-8 grooves have been formed, the walls 10,12 and 9,11 of which have been doped to form amorphous n-Si 15 and amorphous p-Si 16 respectively. In the grooves metal contacts 13,14 have been provided in intimate contact with the amorphous n- Si 15 and p-Si 16 respectively. Carriers generated by incident light in the intrinsic layers 2-3 drift towards the the n-Si layers 5,6 or the p-Si layers 7,8 respectively, depending on their sign, and are transported via the respective layers 5-8 towards the metal contacts 13,14, which thus can provide a photo-current to a circuit connected (not shown) . The solar cell 1 has been extended in the direction of the layers in a repeating pattern, such as to provide upon a single substrate (not shown) a multiple solar cell, the contacts of which are electrically connected in series. The solar cell 1 may easily be extended in a direction transverse with respect to the layers by repeating the sequence of four consecutively stacked layers of amorphous silicon.
Fig. 2 shows another embodiment of a multiple solar cell 21 according to the invention. This cell 21 has in general the the same configuration as the solar cell 1 shown in fig. 1. Corresponding members have been indicated by corresponding reference signs. The advantage of the configuration of cell 21 shown in fig. 2 is the formation within the current transporting amorphous n-Si and p-Si layers 5,6 and 7,8 of small layers of corresponding micro-cristalline silicon 25,26 and 27,28 respectively, thus considerably reducing the resistance of these layers. A further reduction of resistance in the cell 21 has been attained by the doping of the groove walls 10,12 and 9,11 with micro-crystalline n-type silicon 35 and p-type silicon 36 respectively.

Claims

1. Solar cell, comprising at least three substantially thin film parallel silicon layers, stacked upon each other, and at least two conductors providing an electrical contact with at least two of said layers, said conductors extending in a direction substantially transverse with respect to said layers, characterised in that the thin film layers comprise amorphous silicon (a-Si) .
2. Solar cell according to claim 1, characterised in that the thin film layers are provided by amorphous silicon of the p-type (p-Si) , intrinsic amorphous silicon (i-Si) and amorphous silicon of the n-type (n-Si) respectively, in the order given by the formula (I) : p-Si, (i-Si,n-Si, i-Si,p-Si)x, i-Si,n-Si (I) , where x is the number 0 or a natural number, one of said conductors provides an electrical contact with each of said p-Si layers and the other of said conductors provides an electrical contact withe each of said n-Si layers.
3. Solar cell according to claim 2, characterised in that 0__x<_5.
4. Solar cell according to claim 2 or 3, characterised in that the thickness of each thin film layer is less than the carrier collection length in said layers .
5. Solar cell according to any of the claims 2-4, characterised in that a certain amount of crystalline silicon of the p-type is provided within a p-Si layer.
6. Solar cell according to any of the claims 2-4, characterised in that a certain amount of crystalline silicon of the n-type is provided within an n-Si layer.
7. Solar cell according to any of the preceding claims, characterised in that the a-Si is hydrogenated.
8. Solar cell according to claim 7, characterised in that the concentration of hydrogen (H) in the a-Si is in the range of about 1 at.% - about 10 at.% relative to Si.
9. Solar cell according to claim 8, characterised in that the concentration of hydrogen (H) in the a-Si is about 1 at.% relative to Si.
10. Solar cell according to any of the preceding claims, characterised in that the a-Si is alloyed with a material selected from germanium (Ge) , carbon (C) and a combination of said materials.
11. Solar cell according to any of the preceding claims, characterised in that the a-Si is doped with an optically active impurity.
PCT/NL1996/000177 1995-05-01 1996-04-23 Solar cell having a thin film silicon multiple layer structure WO1996035235A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP96911113A EP0826242A1 (en) 1995-05-01 1996-04-23 Solar cell having a thin film silicon multiple layer structure
AU54094/96A AU5409496A (en) 1995-05-01 1996-04-23 Solar cell having a thin film silicon multiple layer structu re

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL1000264A NL1000264C2 (en) 1995-05-01 1995-05-01 Solar cell with multilayer structure of thin films of silicon.
NL1000264 1995-05-01

Publications (1)

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WO1996035235A1 true WO1996035235A1 (en) 1996-11-07

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EP (1) EP0826242A1 (en)
AU (1) AU5409496A (en)
NL (1) NL1000264C2 (en)
TW (1) TW280951B (en)
WO (1) WO1996035235A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010026289A1 (en) * 2010-07-06 2012-01-12 Sameday Media Gmbh Solar cell has solar cell layer having several n-doped regions and p-doped regions which are alternately arranged such that successive p-doped and n-doped regions are separated and spaced from each other by intrinsic region

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2083705A (en) * 1980-09-09 1982-03-24 Energy Conversion Devices Inc Stacked photoresponsive cells of amorphous semiconductors
FR2598033A1 (en) * 1984-10-29 1987-10-30 Mitsubishi Electric Corp AMORPHOUS SOLAR CELL
WO1993012543A1 (en) * 1991-12-09 1993-06-24 Unisearch Limited Buried contact, interconnected thin film and bulk photovoltaic cells
US5338370A (en) * 1991-05-07 1994-08-16 Canon Kabushiki Kaisha Photovoltaic device
WO1995027314A1 (en) * 1994-03-31 1995-10-12 Pacific Solar Pty. Limited Multiple layer thin film solar cells with buried contacts

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2083705A (en) * 1980-09-09 1982-03-24 Energy Conversion Devices Inc Stacked photoresponsive cells of amorphous semiconductors
FR2598033A1 (en) * 1984-10-29 1987-10-30 Mitsubishi Electric Corp AMORPHOUS SOLAR CELL
US5338370A (en) * 1991-05-07 1994-08-16 Canon Kabushiki Kaisha Photovoltaic device
WO1993012543A1 (en) * 1991-12-09 1993-06-24 Unisearch Limited Buried contact, interconnected thin film and bulk photovoltaic cells
WO1995027314A1 (en) * 1994-03-31 1995-10-12 Pacific Solar Pty. Limited Multiple layer thin film solar cells with buried contacts

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010026289A1 (en) * 2010-07-06 2012-01-12 Sameday Media Gmbh Solar cell has solar cell layer having several n-doped regions and p-doped regions which are alternately arranged such that successive p-doped and n-doped regions are separated and spaced from each other by intrinsic region
DE102010026289B4 (en) * 2010-07-06 2014-10-30 Sameday Media Gmbh Solar cell and process

Also Published As

Publication number Publication date
EP0826242A1 (en) 1998-03-04
TW280951B (en) 1996-07-11
NL1000264C2 (en) 1996-11-04
AU5409496A (en) 1996-11-21

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