MY193691A - Sputtering target and production method therefor - Google Patents

Sputtering target and production method therefor

Info

Publication number
MY193691A
MY193691A MYPI2019004604A MYPI2019004604A MY193691A MY 193691 A MY193691 A MY 193691A MY PI2019004604 A MYPI2019004604 A MY PI2019004604A MY PI2019004604 A MYPI2019004604 A MY PI2019004604A MY 193691 A MY193691 A MY 193691A
Authority
MY
Malaysia
Prior art keywords
sputtering target
production method
method therefor
mol
silicon
Prior art date
Application number
MYPI2019004604A
Other languages
English (en)
Inventor
Hironari Urabe
Makoto Ikeda
Teiichiro Umezawa
Mariko Uchida
Isao Kawasumi
Chor Boon Ang
Original Assignee
Mitsui Mining & Smelting Co Ltd
Hoya Corp
Hoya Electronics Singapore Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Mining & Smelting Co Ltd, Hoya Corp, Hoya Electronics Singapore Pte Ltd filed Critical Mitsui Mining & Smelting Co Ltd
Publication of MY193691A publication Critical patent/MY193691A/en

Links

Landscapes

  • Physical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
  • Powder Metallurgy (AREA)
MYPI2019004604A 2017-03-23 2018-02-06 Sputtering target and production method therefor MY193691A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017057426 2017-03-23
PCT/JP2018/003909 WO2018173517A1 (ja) 2017-03-23 2018-02-06 スパッタリングターゲット及びその製造方法

Publications (1)

Publication Number Publication Date
MY193691A true MY193691A (en) 2022-10-25

Family

ID=63585306

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2019004604A MY193691A (en) 2017-03-23 2018-02-06 Sputtering target and production method therefor

Country Status (5)

Country Link
JP (1) JP7060578B2 (ja)
CN (1) CN110392747B (ja)
MY (1) MY193691A (ja)
SG (1) SG11201907100RA (ja)
WO (1) WO2018173517A1 (ja)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2794382B2 (ja) * 1993-05-07 1998-09-03 株式会社ジャパンエナジー スパッタリング用シリサイドターゲット及びその製造方法
KR0184725B1 (ko) * 1993-07-27 1999-04-01 사토 후미오 고융점 금속 실리사이드 타겟, 그의 제조방법, 고융점 금속 실리사이드 박막 및 반도체장치
JP4509363B2 (ja) * 2000-12-05 2010-07-21 株式会社東芝 スパッタリングターゲット、スパッタリングターゲットの製造方法、位相シフトマスクブランクの製造方法および位相シフトマスクの製造方法
JP2004109317A (ja) * 2002-09-17 2004-04-08 Shin Etsu Chem Co Ltd スパッタリングターゲット、及びマスクブランクの製造方法
JP2004204278A (ja) * 2002-12-25 2004-07-22 Hitachi Metals Ltd シリサイドターゲット材の製造方法
JP4376638B2 (ja) * 2004-01-14 2009-12-02 Ｈｏｙａ株式会社 スパッタリングターゲット及びこれを用いたフォトマスクブランクの製造方法
FR2944295B1 (fr) * 2009-04-10 2014-08-15 Saint Gobain Coating Solutions Cible a base de molybdene et procede d'elaboration par projection thermique d'une cible

Also Published As

Publication number Publication date
SG11201907100RA (en) 2019-10-30
CN110392747A (zh) 2019-10-29
CN110392747B (zh) 2021-10-29
JP7060578B2 (ja) 2022-04-26
WO2018173517A1 (ja) 2018-09-27
JPWO2018173517A1 (ja) 2020-01-23

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