SG11201907100RA - Sputtering target and production method therefor - Google Patents

Sputtering target and production method therefor

Info

Publication number
SG11201907100RA
SG11201907100RA SG11201907100RA SG11201907100RA SG 11201907100R A SG11201907100R A SG 11201907100RA SG 11201907100R A SG11201907100R A SG 11201907100RA SG 11201907100R A SG11201907100R A SG 11201907100RA
Authority
SG
Singapore
Prior art keywords
sputtering target
silicon
production method
method therefor
phase
Prior art date
Application number
Inventor
Hironari Urabe
Makoto Ikeda
Teiichiro Umezawa
Mariko Uchida
Isao Kawasumi
Chor Boon Ang
Original Assignee
Mitsui Mining & Smelting Co
Hoya Corp
Hoya Electronics Singapore Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Mining & Smelting Co, Hoya Corp, Hoya Electronics Singapore Pte Ltd filed Critical Mitsui Mining & Smelting Co
Publication of SG11201907100RA publication Critical patent/SG11201907100RA/en

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  • Physical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
  • Powder Metallurgy (AREA)

Abstract

A sputtering target according to the present invention has a molybdenum content of from 3 to 25 mol%, and a silicon content of from 75 to 97 mol%. The sputtering target includes a silicon phase in which an average grain size of silicon grains is 2.0 µm or less, and a molybdenum silicide phase in which an average grain size of molybdenum silicide grains is 2.5 µm or less. The average number of holes present in the silicon phase and having a major axis of 0.3 µm or greater is ten or fewer within an area of 90×125 µm.
SG11201907100R 2017-03-23 2018-02-06 Sputtering target and production method therefor SG11201907100RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017057426 2017-03-23
PCT/JP2018/003909 WO2018173517A1 (en) 2017-03-23 2018-02-06 Sputtering target and production method therefor

Publications (1)

Publication Number Publication Date
SG11201907100RA true SG11201907100RA (en) 2019-10-30

Family

ID=63585306

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201907100R SG11201907100RA (en) 2017-03-23 2018-02-06 Sputtering target and production method therefor

Country Status (5)

Country Link
JP (1) JP7060578B2 (en)
CN (1) CN110392747B (en)
MY (1) MY193691A (en)
SG (1) SG11201907100RA (en)
WO (1) WO2018173517A1 (en)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2794382B2 (en) * 1993-05-07 1998-09-03 株式会社ジャパンエナジー Silicide target for sputtering and method for producing the same
EP1118690A3 (en) * 1993-07-27 2001-09-26 Kabushiki Kaisha Toshiba Refractory metal silicide target
JP4509363B2 (en) * 2000-12-05 2010-07-21 株式会社東芝 Sputtering target, sputtering target manufacturing method, phase shift mask blank manufacturing method, and phase shift mask manufacturing method
JP2004109317A (en) * 2002-09-17 2004-04-08 Shin Etsu Chem Co Ltd Sputtering target, and method for manufacturing mask blank
JP2004204278A (en) * 2002-12-25 2004-07-22 Hitachi Metals Ltd Silicide target manufacturing method
JP4376638B2 (en) * 2004-01-14 2009-12-02 Ｈｏｙａ株式会社 Sputtering target and photomask blank manufacturing method using the same
FR2944295B1 (en) * 2009-04-10 2014-08-15 Saint Gobain Coating Solutions MOLYBDENE-BASED TARGET AND THERMAL PROJECTION DELIVERY METHOD OF A TARGET

Also Published As

Publication number Publication date
JP7060578B2 (en) 2022-04-26
WO2018173517A1 (en) 2018-09-27
CN110392747A (en) 2019-10-29
CN110392747B (en) 2021-10-29
MY193691A (en) 2022-10-25
JPWO2018173517A1 (en) 2020-01-23

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