MY180538A - Wafer producing method - Google Patents

Wafer producing method

Info

Publication number
MY180538A
MY180538A MYPI2015704149A MYPI2015704149A MY180538A MY 180538 A MY180538 A MY 180538A MY PI2015704149 A MYPI2015704149 A MY PI2015704149A MY PI2015704149 A MYPI2015704149 A MY PI2015704149A MY 180538 A MY180538 A MY 180538A
Authority
MY
Malaysia
Prior art keywords
ingot
laser beam
modified layer
wafer
start point
Prior art date
Application number
MYPI2015704149A
Inventor
Hirata Kazuya
Takahashi Kunimitsu
Nishino Yoko
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of MY180538A publication Critical patent/MY180538A/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/0823—Devices involving rotation of the workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/55—Working by transmitting the laser beam through or within the workpiece for creating voids inside the workpiece, e.g. for forming flow passages or flow patterns
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/06—Joining of crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Laser Beam Processing (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

A wafer producing method for producing a hexagonal single crystal wafer from a hexagonal single crystal ingot (11) includes a separation start point forming step of setting the focal point of a laser beam inside the ingot (11) at a predetermined depth from the upper surface of the ingot (11), which depth corresponds to the thickness of the wafer to be produced, and next applying the laser beam to the upper surface of the ingot (11) while relatively moving the focal point and the ingot (11) to thereby form a modified layer (23) parallel to the upper surface of the ingot ( 11) and cracks extending from the modified layer (23), thus forming a separation start point. In the separation start point forming step, the laser beam is applied to the ingot (11) plural times with the focal point of the laser beam set at the modified layer (23) previously formed, thereby separating the cracks from the modified layer (23). The most suitable drawing: FIG. 6.
MYPI2015704149A 2014-12-04 2015-11-17 Wafer producing method MY180538A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014246229A JP6358941B2 (en) 2014-12-04 2014-12-04 Wafer generation method

Publications (1)

Publication Number Publication Date
MY180538A true MY180538A (en) 2020-12-01

Family

ID=55974434

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2015704149A MY180538A (en) 2014-12-04 2015-11-17 Wafer producing method

Country Status (8)

Country Link
US (1) US9789565B2 (en)
JP (1) JP6358941B2 (en)
KR (1) KR102341600B1 (en)
CN (1) CN105665949B (en)
DE (1) DE102015224318B4 (en)
MY (1) MY180538A (en)
SG (1) SG10201509475VA (en)
TW (1) TWI687560B (en)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6358940B2 (en) * 2014-12-04 2018-07-18 株式会社ディスコ Wafer generation method
JP6399914B2 (en) * 2014-12-04 2018-10-03 株式会社ディスコ Wafer generation method
JP6399913B2 (en) * 2014-12-04 2018-10-03 株式会社ディスコ Wafer generation method
JP6358941B2 (en) 2014-12-04 2018-07-18 株式会社ディスコ Wafer generation method
JP6391471B2 (en) 2015-01-06 2018-09-19 株式会社ディスコ Wafer generation method
JP6395633B2 (en) 2015-02-09 2018-09-26 株式会社ディスコ Wafer generation method
JP6395632B2 (en) * 2015-02-09 2018-09-26 株式会社ディスコ Wafer generation method
JP6494382B2 (en) 2015-04-06 2019-04-03 株式会社ディスコ Wafer generation method
JP6429715B2 (en) 2015-04-06 2018-11-28 株式会社ディスコ Wafer generation method
JP6425606B2 (en) * 2015-04-06 2018-11-21 株式会社ディスコ Wafer production method
JP6456228B2 (en) * 2015-04-15 2019-01-23 株式会社ディスコ Thin plate separation method
JP6472333B2 (en) 2015-06-02 2019-02-20 株式会社ディスコ Wafer generation method
JP6478821B2 (en) * 2015-06-05 2019-03-06 株式会社ディスコ Wafer generation method
JP6482423B2 (en) 2015-07-16 2019-03-13 株式会社ディスコ Wafer generation method
JP6482425B2 (en) 2015-07-21 2019-03-13 株式会社ディスコ Thinning method of wafer
JP6472347B2 (en) 2015-07-21 2019-02-20 株式会社ディスコ Thinning method of wafer
JP6604891B2 (en) * 2016-04-06 2019-11-13 株式会社ディスコ Wafer generation method
JP6690983B2 (en) 2016-04-11 2020-04-28 株式会社ディスコ Wafer generation method and actual second orientation flat detection method
JP6698468B2 (en) * 2016-08-10 2020-05-27 株式会社ディスコ Wafer generation method
JP6723877B2 (en) * 2016-08-29 2020-07-15 株式会社ディスコ Wafer generation method
JP6773506B2 (en) * 2016-09-29 2020-10-21 株式会社ディスコ Wafer generation method
JP6773539B2 (en) * 2016-12-06 2020-10-21 株式会社ディスコ Wafer generation method
JP6858587B2 (en) 2017-02-16 2021-04-14 株式会社ディスコ Wafer generation method
US20190232433A1 (en) * 2018-02-01 2019-08-01 Panasonic Corporation Slicing method and slicing apparatus
US10576585B1 (en) * 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
US11024501B2 (en) 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region
US10611052B1 (en) 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
CN110900016B (en) * 2020-01-02 2022-02-01 北京理工大学重庆创新中心 Complex micro-nano structure processing method based on laser separation
CN110900015B (en) * 2020-01-02 2022-02-01 北京理工大学重庆创新中心 Multi-laser composite precision machining method for free-form surface optical lens
JP7585714B2 (en) * 2020-10-28 2024-11-19 株式会社デンソー Method for manufacturing chip configuration wafer
JP2023026921A (en) * 2021-08-16 2023-03-01 株式会社ディスコ Wafer processing method
JP2023108103A (en) * 2022-01-25 2023-08-04 株式会社ディスコ Manufacturing method of single crystal silicon substrate
JP7679948B1 (en) * 2024-04-09 2025-05-20 有限会社ドライケミカルズ Manufacturing method of semiconductor crystal wafer

Family Cites Families (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5223692A (en) 1991-09-23 1993-06-29 General Electric Company Method and apparatus for laser trepanning
FR2716303B1 (en) 1994-02-11 1996-04-05 Franck Delorme Wavelength tunable distributed Bragg reflector laser with selectively activated virtual diffraction gratings.
US5561544A (en) 1995-03-06 1996-10-01 Macken; John A. Laser scanning system with reflecting optics
TW350095B (en) 1995-11-21 1999-01-11 Daido Hoxan Inc Cutting method and apparatus for semiconductor materials
JP2000094221A (en) 1998-09-24 2000-04-04 Toyo Advanced Technologies Co Ltd Electric discharge wire saw
TWI261358B (en) 2002-01-28 2006-09-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
JP3998639B2 (en) * 2004-01-13 2007-10-31 株式会社東芝 Manufacturing method of semiconductor light emitting device
JP2005268752A (en) * 2004-02-19 2005-09-29 Canon Inc Method of laser cutting, workpiece and semiconductor-element chip
JP2005277136A (en) * 2004-03-25 2005-10-06 Sharp Corp Method and apparatus of manufacturing substrate
US20050217560A1 (en) * 2004-03-31 2005-10-06 Tolchinsky Peter G Semiconductor wafers with non-standard crystal orientations and methods of manufacturing the same
CN100517583C (en) 2004-06-11 2009-07-22 昭和电工株式会社 Method for manufacturing compound semiconductor device wafer, wafer and device manufactured therefor
JP4749799B2 (en) 2005-08-12 2011-08-17 浜松ホトニクス株式会社 Laser processing method
JP4183093B2 (en) 2005-09-12 2008-11-19 コバレントマテリアル株式会社 Silicon wafer manufacturing method
WO2007087354A2 (en) * 2006-01-24 2007-08-02 Baer Stephen C Cleaving wafers from silicon crystals
JP4402708B2 (en) * 2007-08-03 2010-01-20 浜松ホトニクス株式会社 Laser processing method, laser processing apparatus and manufacturing method thereof
JP2009266892A (en) * 2008-04-22 2009-11-12 Sumitomo Electric Ind Ltd Method for manufacturing compound semiconductor crystalline substrate
JP2008201143A (en) * 2008-06-02 2008-09-04 Denso Corp Cutting process of work
US8338218B2 (en) 2008-06-26 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device module and manufacturing method of the photoelectric conversion device module
JP5692969B2 (en) 2008-09-01 2015-04-01 浜松ホトニクス株式会社 Aberration correction method, laser processing method using this aberration correction method, laser irradiation method using this aberration correction method, aberration correction apparatus, and aberration correction program
JP2010153590A (en) * 2008-12-25 2010-07-08 Hamamatsu Photonics Kk Processing method for cutting
JP5446325B2 (en) * 2009-03-03 2014-03-19 豊田合成株式会社 Laser processing method and compound semiconductor light emitting device manufacturing method
CN105023973A (en) 2009-04-21 2015-11-04 泰特拉桑有限公司 Method for forming structures in a solar cell
JP5537081B2 (en) 2009-07-28 2014-07-02 浜松ホトニクス株式会社 Processing object cutting method
JP2011165766A (en) 2010-02-05 2011-08-25 Disco Abrasive Syst Ltd Method of processing optical device wafer
JP5558128B2 (en) 2010-02-05 2014-07-23 株式会社ディスコ Processing method of optical device wafer
JP2012109341A (en) * 2010-11-16 2012-06-07 Shibuya Kogyo Co Ltd Slicing method and slicing device of semiconductor material
JP5670764B2 (en) * 2011-01-13 2015-02-18 浜松ホトニクス株式会社 Laser processing method
JP5480169B2 (en) * 2011-01-13 2014-04-23 浜松ホトニクス株式会社 Laser processing method
JP5670765B2 (en) * 2011-01-13 2015-02-18 浜松ホトニクス株式会社 Laser processing method
JP5775312B2 (en) * 2011-01-13 2015-09-09 浜松ホトニクス株式会社 Laser processing method
KR20130103624A (en) * 2011-02-10 2013-09-23 신에츠 폴리머 가부시키가이샤 Monocrystalline substrate production method and monocrystalline member with modified layer formed therein
JP5904720B2 (en) 2011-05-12 2016-04-20 株式会社ディスコ Wafer division method
JP5917862B2 (en) * 2011-08-30 2016-05-18 浜松ホトニクス株式会社 Processing object cutting method
JP6002982B2 (en) 2011-08-31 2016-10-05 株式会社フジシール Pouch container
JP5843393B2 (en) * 2012-02-01 2016-01-13 信越ポリマー株式会社 Single crystal substrate manufacturing method, single crystal substrate, and internal modified layer forming single crystal member manufacturing method
JP2015516672A (en) 2012-02-26 2015-06-11 ソレクセル、インコーポレイテッド System and method for laser splitting and equipment layer relocation
JP2014019120A (en) * 2012-07-23 2014-02-03 Shin Etsu Polymer Co Ltd Method of manufacturing single crystal member for forming internal processing layer
JP2014041925A (en) * 2012-08-22 2014-03-06 Hamamatsu Photonics Kk Method for cutting workpiece
US9768343B2 (en) 2013-04-29 2017-09-19 OB Realty, LLC. Damage free laser patterning of transparent layers for forming doped regions on a solar cell substrate
JP6390898B2 (en) 2014-08-22 2018-09-19 アイシン精機株式会社 Substrate manufacturing method, workpiece cutting method, and laser processing apparatus
JP6358941B2 (en) 2014-12-04 2018-07-18 株式会社ディスコ Wafer generation method
JP6395613B2 (en) * 2015-01-06 2018-09-26 株式会社ディスコ Wafer generation method
JP6395634B2 (en) 2015-02-09 2018-09-26 株式会社ディスコ Wafer generation method
JP6395633B2 (en) 2015-02-09 2018-09-26 株式会社ディスコ Wafer generation method
JP6425606B2 (en) 2015-04-06 2018-11-21 株式会社ディスコ Wafer production method
JP6482389B2 (en) 2015-06-02 2019-03-13 株式会社ディスコ Wafer generation method
JP6472333B2 (en) 2015-06-02 2019-02-20 株式会社ディスコ Wafer generation method
JP6482423B2 (en) 2015-07-16 2019-03-13 株式会社ディスコ Wafer generation method
JP6486240B2 (en) 2015-08-18 2019-03-20 株式会社ディスコ Wafer processing method
JP6486239B2 (en) 2015-08-18 2019-03-20 株式会社ディスコ Wafer processing method

Also Published As

Publication number Publication date
DE102015224318B4 (en) 2024-05-02
KR102341600B1 (en) 2021-12-22
TWI687560B (en) 2020-03-11
US20160158881A1 (en) 2016-06-09
US9789565B2 (en) 2017-10-17
JP2016111150A (en) 2016-06-20
KR20160067783A (en) 2016-06-14
TW201631228A (en) 2016-09-01
CN105665949A (en) 2016-06-15
CN105665949B (en) 2019-04-19
DE102015224318A1 (en) 2016-06-09
JP6358941B2 (en) 2018-07-18
SG10201509475VA (en) 2016-07-28

Similar Documents

Publication Publication Date Title
MY180538A (en) Wafer producing method
MY175831A (en) Wafer producing method
MY177494A (en) Wafer producing method
MY180541A (en) Wafer producing method
MY171644A (en) Wafer producing method
MY180539A (en) Wafer producing method
MY188444A (en) Wafer producing method
MY181116A (en) Wafer producing method
MY177233A (en) Wafer producing method
SG10201709401QA (en) SiC WAFER PRODUCING METHOD
MY177492A (en) Wafer producing method
MY186677A (en) Sic wafer producing method
MY187221A (en) Sic wafer producing method
SG10201803304XA (en) SiC WAFER PRODUCING METHOD
SG10201800388UA (en) SiC WAFER PRODUCING METHOD
MY177493A (en) Wafer producing method
MY179207A (en) Wafer producing method
MY176320A (en) Wafer thinning method
MY180611A (en) Sic substrate separating method
MY176317A (en) Polycrystalline sic wafer producing method
MY179209A (en) Wafer producing method
MY177495A (en) Wafer thinning method
MY195790A (en) Wafer Producing Method and Wafer Producing Apparatus
MY181950A (en) Wafer processing method
MY177235A (en) Wafer producing method