MY149762A - Double side wafer grinder and methods for assessing workpiece nanotopology - Google Patents

Double side wafer grinder and methods for assessing workpiece nanotopology

Info

Publication number
MY149762A
MY149762A MYPI20082826A MYPI20082826A MY149762A MY 149762 A MY149762 A MY 149762A MY PI20082826 A MYPI20082826 A MY PI20082826A MY PI20082826 A MYPI20082826 A MY PI20082826A MY 149762 A MY149762 A MY 149762A
Authority
MY
Malaysia
Prior art keywords
workpiece
nanotopology
assessing
double side
methods
Prior art date
Application number
MYPI20082826A
Other languages
English (en)
Inventor
Sumeet S Bhagavat
Milind S Bhagavat
Roland S Vandamme
Komura Tomomi
Original Assignee
Memc Electronic Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/617,433 external-priority patent/US7601049B2/en
Priority claimed from US11/617,430 external-priority patent/US7662023B2/en
Application filed by Memc Electronic Materials filed Critical Memc Electronic Materials
Publication of MY149762A publication Critical patent/MY149762A/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/27Work carriers
    • B24B37/28Work carriers for double side lapping of plane surfaces
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12Preparing bulk and homogeneous wafers
    • H10P90/123Preparing bulk and homogeneous wafers by grinding or lapping

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
MYPI20082826A 2006-01-30 2007-01-24 Double side wafer grinder and methods for assessing workpiece nanotopology MY149762A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US76345606P 2006-01-30 2006-01-30
US11/617,433 US7601049B2 (en) 2006-01-30 2006-12-28 Double side wafer grinder and methods for assessing workpiece nanotopology
US11/617,430 US7662023B2 (en) 2006-01-30 2006-12-28 Double side wafer grinder and methods for assessing workpiece nanotopology

Publications (1)

Publication Number Publication Date
MY149762A true MY149762A (en) 2013-10-14

Family

ID=38255858

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI20082826A MY149762A (en) 2006-01-30 2007-01-24 Double side wafer grinder and methods for assessing workpiece nanotopology

Country Status (7)

Country Link
EP (1) EP1981685B1 (https=)
JP (1) JP5518338B2 (https=)
KR (1) KR101247065B1 (https=)
CN (1) CN101410224B (https=)
MY (1) MY149762A (https=)
TW (1) TWI381906B (https=)
WO (1) WO2007130708A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7930058B2 (en) 2006-01-30 2011-04-19 Memc Electronic Materials, Inc. Nanotopography control and optimization using feedback from warp data
US8712575B2 (en) * 2010-03-26 2014-04-29 Memc Electronic Materials, Inc. Hydrostatic pad pressure modulation in a simultaneous double side wafer grinder
JP7159861B2 (ja) * 2018-12-27 2022-10-25 株式会社Sumco 両頭研削方法
CN113314430B (zh) * 2021-01-05 2024-04-16 长江存储科技有限责任公司 Cmp工艺中的监测方法以及监测系统
CN114770366B (zh) * 2022-05-17 2023-11-17 西安奕斯伟材料科技股份有限公司 一种硅片双面研磨装置的静压板及硅片双面研磨装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970077136A (ko) * 1996-05-11 1997-12-12 김광호 웨이퍼 척을 갖춘 웨이퍼 에지 그라인딩 장치
KR980012012A (ko) * 1996-07-24 1998-04-30 김광호 웨이퍼 그라인더
US5816895A (en) * 1997-01-17 1998-10-06 Tokyo Seimitsu Co., Ltd. Surface grinding method and apparatus
US6416836B1 (en) * 1998-10-14 2002-07-09 Memc Electronic Materials, Inc. Thermally annealed, low defect density single crystal silicon
US6479386B1 (en) * 2000-02-16 2002-11-12 Memc Electronic Materials, Inc. Process for reducing surface variations for polished wafer
JP2001332609A (ja) * 2000-03-13 2001-11-30 Nikon Corp 基板保持装置及び露光装置
US20040242132A1 (en) * 2001-07-19 2004-12-02 Susumu Hoshino Polishing element, cmp polishing device and productionj method for semiconductor device
DE10142400B4 (de) * 2001-08-30 2009-09-03 Siltronic Ag Halbleiterscheibe mit verbesserter lokaler Ebenheit und Verfahren zu deren Herstellung
TW575476B (en) * 2001-09-07 2004-02-11 United Microelectronics Corp Control system for in-situ feeding back a polish profile
US6937915B1 (en) * 2002-03-28 2005-08-30 Lam Research Corporation Apparatus and methods for detecting transitions of wafer surface properties in chemical mechanical polishing for process status and control
JP4072788B2 (ja) * 2002-10-09 2008-04-09 光洋機械工業株式会社 薄肉円板状工作物の両面研削方法および両面研削装置
JP2005025444A (ja) * 2003-07-01 2005-01-27 Fuji Photo Film Co Ltd データベースシステムにおけるデータ登録サーバおよびその制御方法
JP2005107854A (ja) * 2003-09-30 2005-04-21 Komatsu Electronic Metals Co Ltd ラップ盤のシミュレーションのためのシステム及びプログラム
JP3993856B2 (ja) * 2004-01-22 2007-10-17 光洋機械工業株式会社 両頭平面研削装置
DE102004005702A1 (de) * 2004-02-05 2005-09-01 Siltronic Ag Halbleiterscheibe, Vorrichtung und Verfahren zur Herstellung der Halbleiterscheibe
DE102004011996B4 (de) 2004-03-11 2007-12-06 Siltronic Ag Vorrichtung zum simultanen beidseitigen Schleifen von scheibenförmigen Werkstücken
EP1735127B1 (en) * 2004-03-19 2013-07-31 MEMC Electronic Materials, Inc. Wafer clamping device for a double side grinder

Also Published As

Publication number Publication date
EP1981685A1 (en) 2008-10-22
TWI381906B (zh) 2013-01-11
JP2009525621A (ja) 2009-07-09
CN101410224A (zh) 2009-04-15
JP5518338B2 (ja) 2014-06-11
KR101247065B1 (ko) 2013-03-25
WO2007130708A1 (en) 2007-11-15
CN101410224B (zh) 2012-01-25
EP1981685B1 (en) 2012-05-30
TW200800493A (en) 2008-01-01
KR20080090558A (ko) 2008-10-08

Similar Documents

Publication Publication Date Title
MY149762A (en) Double side wafer grinder and methods for assessing workpiece nanotopology
TW200706856A (en) Differential wavelength photoluminescence for non-contact measuring of contaminants and defects located below the surface of a wafer or other workpiece
WO2013173468A3 (en) Method and device for using substrate geometry to determine substrate analysis sampling
JP2011507719A5 (https=)
TWI317809B (en) System for inline processing of a material
TW200730285A (en) Real time target topography tracking during laser processing
ATE448049T1 (de) Verfahren und vorrichtungen für elektro-chemisch- mechanisches polieren
WO2009041637A1 (ja) 半導体検査装置及び検査方法ならびに被検査半導体装置
TW200507151A (en) Chamber stability monitoring by an integrated metrology tool
UA106488C2 (uk) Пристрій для шліфування безперервно-литого виробу
ATE533043T1 (de) Vorrichtung und verfahren zum nachweis von halbleitersubstratanomalien
US7185521B2 (en) Method and apparatus for process control of burnishing
TW200715441A (en) Apparatuses and methods for detecting defects in semiconductor workpieces
TW200833466A (en) Polishing method and polishing apparatus
WO2007089265A3 (en) Method and apparatus for sensing distortion
TW200506315A (en) Substrate holder, substrate processing apparatus, substrate inspection device and method of using the same
ATE323572T1 (de) Verfahren und vorrichtung zur prüfung des bearbeitungsverfahrens einer werkzeugmaschine
JP2009525621A5 (https=)
CN105555471B (zh) 带有硬度测量装置的机床
DE602006004671D1 (de) Verfahren und Vorrichtung zum schleifen der Rückseite eines Halbleiterwafers
TW200639020A (en) Method for detecting the using condition and lifetime of the polish pad by sensing the temperature of the grinding interface during the chemical-mechanical polishing process
TWI300365B (https=)
CN206627084U (zh) 一种内腔零件的测量机构
FR2878075B1 (fr) Procede et appareil de mesure de plaques de semi-conducteur
TW200639935A (en) A system for use in manufacturing semiconductor devices