MXPA02008451A - Intermezclado de cavidad cuantica. - Google Patents

Intermezclado de cavidad cuantica.

Info

Publication number
MXPA02008451A
MXPA02008451A MXPA02008451A MXPA02008451A MXPA02008451A MX PA02008451 A MXPA02008451 A MX PA02008451A MX PA02008451 A MXPA02008451 A MX PA02008451A MX PA02008451 A MXPA02008451 A MX PA02008451A MX PA02008451 A MXPA02008451 A MX PA02008451A
Authority
MX
Mexico
Prior art keywords
technique
fabrication
iid
gray scale
novel
Prior art date
Application number
MXPA02008451A
Other languages
English (en)
Inventor
Boon Siew Ooi
Original Assignee
Finnie Peter John
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PCT/SG2000/000038 external-priority patent/WO2001067499A1/en
Priority claimed from PCT/SG2000/000039 external-priority patent/WO2001067569A1/en
Application filed by Finnie Peter John filed Critical Finnie Peter John
Publication of MXPA02008451A publication Critical patent/MXPA02008451A/es

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0045—Devices characterised by their operation the devices being superluminescent diodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
    • G02B6/293—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
    • G02B6/29346—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means operating by wave or beam interference
    • G02B6/29361—Interference filters, e.g. multilayer coatings, thin film filters, dichroic splitters or mirrors based on multilayers, WDM filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/182—Intermixing or interdiffusion or disordering of III-V heterostructures, e.g. IILD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12128—Multiple Quantum Well [MQW]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2068—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by radiation treatment or annealing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3413—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3413—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers
    • H01S5/3414—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers by vacancy induced interdiffusion

Abstract

La presente invencion proporciona una tecnica novedosa basada en la configuracion de mascara en escala gris (110), que requiere unicamente una sola etapa de litografia y grabado (110, 120) para producir diferente espesor de la mascara de implantacion de SiO2 (13) en regiones seleccionadas, seguido por un IID de una etapa (130) para obtener el intezmezclado de area selectiva. Esta tecnica novedosa, de bajo costo y simple se puede aplicar para la fabricacion de PICs en general, y fuentes de WDM en particular. Al aplicar una tecnica de mascara en escala gris en el IID de acuerdo con la presente invencion, la energia del intervalo de banda de un material de QW puede ser modulada a diferentes grados a traves de una pastilla (14). Esto permite no solamente la integracion de lasers de longitud de onda multiple, monoliticos, sino que ademas se extiende a la integracion con moduladores y acopladores sobre un solo chip. Esta tecnica tambien se puede aplicar para facilitar la fabricacion y el proceso de diseno de diodos superluminiscentes (SLDs) al expandir el espectro de ganancia a un maximo despues del desarrollo o crecimiento epitaxial.
MXPA02008451A 2000-03-08 2001-03-02 Intermezclado de cavidad cuantica. MXPA02008451A (es)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
PCT/SG2000/000038 WO2001067499A1 (en) 2000-03-08 2000-03-08 Multiple bandgap photonic integration
PCT/SG2000/000039 WO2001067569A1 (en) 2000-03-08 2000-03-08 Plasma based process for photonic integration
SG2000047860 2000-09-11
SG2000047878 2000-09-11
PCT/GB2001/000904 WO2001067497A1 (en) 2000-03-08 2001-03-02 Quantum well intermixing

Publications (1)

Publication Number Publication Date
MXPA02008451A true MXPA02008451A (es) 2004-05-14

Family

ID=27484839

Family Applications (2)

Application Number Title Priority Date Filing Date
MXPA02008450A MXPA02008450A (es) 2000-03-08 2001-03-02 Intermezclado de cavidad cuantica.
MXPA02008451A MXPA02008451A (es) 2000-03-08 2001-03-02 Intermezclado de cavidad cuantica.

Family Applications Before (1)

Application Number Title Priority Date Filing Date
MXPA02008450A MXPA02008450A (es) 2000-03-08 2001-03-02 Intermezclado de cavidad cuantica.

Country Status (12)

Country Link
EP (2) EP1262002B1 (es)
JP (2) JP2003526918A (es)
KR (2) KR20020086626A (es)
CN (2) CN1416589A (es)
AU (2) AU775026B2 (es)
BR (1) BR0109073A (es)
CA (2) CA2398301A1 (es)
DE (1) DE60106575D1 (es)
HK (2) HK1048390A1 (es)
IL (2) IL150835A0 (es)
MX (2) MXPA02008450A (es)
WO (2) WO2001067568A1 (es)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AUPR043900A0 (en) * 2000-09-28 2000-10-26 Australian National University, The Method of disordering quantum well heterostructures by high energy ion irradiation
GB2379795B (en) * 2001-09-13 2004-02-18 Univ Glasgow Method of manufacturing optical devices and related improvements
US6594295B1 (en) * 2001-11-16 2003-07-15 Fox-Tek, Inc. Semiconductor laser with disordered and non-disordered quantum well regions
EP1403986A1 (en) * 2002-09-25 2004-03-31 Agilent Technologies, Inc. - a Delaware corporation - Semiconductor laser device
GB0317856D0 (en) * 2003-07-30 2003-09-03 Denselight Semiconductors Pte Quantum well intermixing for improved isolation in photonic devices
GB2409572B (en) * 2003-12-24 2006-02-15 Intense Photonics Ltd Generating multiple bandgaps using multiple epitaxial layers
US7485892B2 (en) 2005-12-29 2009-02-03 Carl Zeiss Meditec Inc. Optical broadband emitters and methods of making the same
KR100884353B1 (ko) 2007-09-18 2009-02-18 한국전자통신연구원 고휘도 다이오드 및 그 제조 방법
US7723139B2 (en) * 2007-10-01 2010-05-25 Corning Incorporated Quantum well intermixing
EP2243152A4 (en) * 2008-01-18 2015-06-17 Univ California INTEGRATION PLATFORM CONNECTED TO A HYBRID SILICON-LASER-QUANTUM-TRAY MIXING LAYER FOR ADVANCED PHOTONIC CIRCUITS WITH ELECTRO-ABSORPTION MODULATORS
CN101271865B (zh) * 2008-04-29 2010-06-02 无锡中微晶园电子有限公司 Lcd高压驱动电路的伪外延高压结构的制造方法
CN101697341B (zh) * 2009-10-29 2011-11-30 浙江大学 一种量子阱混合方法
CN101774540B (zh) * 2010-02-09 2013-04-03 浙江大学 一种量子阱混杂方法
CN102487104B (zh) * 2010-12-06 2014-01-08 中国科学院微电子研究所 一种硅基光电异质集成中的多量子阱混杂能带方法
JP2013102068A (ja) * 2011-11-09 2013-05-23 Stanley Electric Co Ltd 窒化物半導体発光素子及びその製造方法
CN102683519B (zh) * 2012-05-31 2015-04-01 武汉光迅科技股份有限公司 一种宽光谱半导体超辐射发光二极管的制作方法
CN103762158B (zh) * 2014-01-23 2016-04-27 中国科学院半导体研究所 利用激光微区等离子体诱导量子阱混和的方法
CN104793288A (zh) * 2015-04-30 2015-07-22 上海美维科技有限公司 一种含有光波导耦合器件的印制线路板的制造方法
US20230296853A9 (en) 2015-10-08 2023-09-21 Teramount Ltd. Optical Coupling
US9804334B2 (en) 2015-10-08 2017-10-31 Teramount Ltd. Fiber to chip optical coupler
US11585991B2 (en) 2019-02-28 2023-02-21 Teramount Ltd. Fiberless co-packaged optics
US10564374B2 (en) 2015-10-08 2020-02-18 Teramount Ltd. Electro-optical interconnect platform
CN108375601A (zh) * 2018-01-03 2018-08-07 中国工程物理研究院电子工程研究所 一种氧化硅薄膜中氧空位浓度的测量方法
GB2579622B (en) 2018-12-06 2021-04-28 Exalos Ag Superluminescent diodes and diode modules
CN113204074A (zh) * 2021-04-21 2021-08-03 上海大学 一种基于紫外灰度光刻法制备的非等高光波导定向模式耦合器

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US4654090A (en) * 1985-09-13 1987-03-31 Xerox Corporation Selective disordering of well structures by laser annealing
KR0161389B1 (ko) * 1995-02-16 1999-01-15 윤종용 마스크 및 이를 사용한 패턴형성방법
GB9503981D0 (en) * 1995-02-28 1995-04-19 Ca Nat Research Council Bandag tuning of semiconductor well structures

Also Published As

Publication number Publication date
AU3583601A (en) 2001-09-17
EP1261986A1 (en) 2002-12-04
WO2001067568A1 (en) 2001-09-13
AU775026B2 (en) 2004-07-15
WO2001067497A1 (en) 2001-09-13
HK1048393A1 (zh) 2003-03-28
EP1262002B1 (en) 2004-10-20
IL150834A0 (en) 2003-02-12
KR20020089386A (ko) 2002-11-29
BR0109073A (pt) 2002-11-26
CA2398301A1 (en) 2001-09-13
JP2003526918A (ja) 2003-09-09
DE60106575D1 (de) 2004-11-25
KR20020086626A (ko) 2002-11-18
CN1416607A (zh) 2003-05-07
MXPA02008450A (es) 2005-02-03
IL150835A0 (en) 2003-02-12
JP2004500715A (ja) 2004-01-08
AU3583001A (en) 2001-09-17
CA2398359A1 (en) 2001-09-13
AU774678B2 (en) 2004-07-01
HK1048390A1 (zh) 2003-03-28
EP1262002A1 (en) 2002-12-04
CN1416589A (zh) 2003-05-07

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