MX9804240A - Manejadores de integrados para pantallas planas que emplean elementos logicos de calcogenidos. - Google Patents
Manejadores de integrados para pantallas planas que emplean elementos logicos de calcogenidos.Info
- Publication number
- MX9804240A MX9804240A MX9804240A MX9804240A MX9804240A MX 9804240 A MX9804240 A MX 9804240A MX 9804240 A MX9804240 A MX 9804240A MX 9804240 A MX9804240 A MX 9804240A MX 9804240 A MX9804240 A MX 9804240A
- Authority
- MX
- Mexico
- Prior art keywords
- flat panel
- panel displays
- logic elements
- logic gate
- ots3
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/20—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/20—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
- H03K19/23—Majority or minority circuits, i.e. giving output having the state of the majority or the minority of the inputs
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
- H03M1/00—Analogue/digital conversion; Digital/analogue conversion
- H03M1/66—Digital/analogue converters
- H03M1/74—Simultaneous conversion
- H03M1/76—Simultaneous conversion using switching tree
- H03M1/765—Simultaneous conversion using switching tree using a single level of switches which are controlled by unary decoded digital signals
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
- H03M5/00—Conversion of the form of the representation of individual digits
- H03M5/02—Conversion to or from representation by pulses
- H03M5/20—Conversion to or from representation by pulses the pulses having more than three levels
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Power Engineering (AREA)
- Logic Circuits (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Control Of El Displays (AREA)
Abstract
La presente invencion define una familia de circuitería logica que comprende cuando menos una compuerta logica. Cada compuerta logica comprende una pluralidad de conmutadores de umbral calcogenidos ( OTS1, OTS2, OTS3). Las compuertas logicas de la presente invencion usan un conmutador de umbral calcogenido (OTS3) como un medio de descargar la capacitancia de carga y reponer o reajustar la salida de la compuerta logica. La presente invencion también define un manejador de pantalla para impulsar una pantalla de panel plana que tenga líneas de impulsion en filas y columnas. El manejador de pantalla comprende compuerta logicas en donde cada compuerta logica consiste de interruptores de umbral de calcogenidos.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/565,187 US5694054A (en) | 1995-11-28 | 1995-11-28 | Integrated drivers for flat panel displays employing chalcogenide logic elements |
Publications (1)
Publication Number | Publication Date |
---|---|
MX9804240A true MX9804240A (es) | 1998-09-30 |
Family
ID=24257554
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MX9804240A MX9804240A (es) | 1995-11-28 | 1998-05-27 | Manejadores de integrados para pantallas planas que emplean elementos logicos de calcogenidos. |
Country Status (10)
Country | Link |
---|---|
US (1) | US5694054A (es) |
EP (1) | EP0864204B1 (es) |
JP (1) | JP2000501265A (es) |
KR (1) | KR100354782B1 (es) |
AU (1) | AU1141797A (es) |
CA (1) | CA2236119C (es) |
DE (1) | DE69630139T2 (es) |
MX (1) | MX9804240A (es) |
UA (1) | UA46076C2 (es) |
WO (1) | WO1997020391A1 (es) |
Families Citing this family (85)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6638820B2 (en) | 2001-02-08 | 2003-10-28 | Micron Technology, Inc. | Method of forming chalcogenide comprising devices, method of precluding diffusion of a metal into adjacent chalcogenide material, and chalcogenide comprising devices |
US6727192B2 (en) | 2001-03-01 | 2004-04-27 | Micron Technology, Inc. | Methods of metal doping a chalcogenide material |
US6734455B2 (en) | 2001-03-15 | 2004-05-11 | Micron Technology, Inc. | Agglomeration elimination for metal sputter deposition of chalcogenides |
US7102150B2 (en) | 2001-05-11 | 2006-09-05 | Harshfield Steven T | PCRAM memory cell and method of making same |
US6951805B2 (en) | 2001-08-01 | 2005-10-04 | Micron Technology, Inc. | Method of forming integrated circuitry, method of forming memory circuitry, and method of forming random access memory circuitry |
US6737312B2 (en) | 2001-08-27 | 2004-05-18 | Micron Technology, Inc. | Method of fabricating dual PCRAM cells sharing a common electrode |
US6881623B2 (en) | 2001-08-29 | 2005-04-19 | Micron Technology, Inc. | Method of forming chalcogenide comprising devices, method of forming a programmable memory cell of memory circuitry, and a chalcogenide comprising device |
US6784018B2 (en) | 2001-08-29 | 2004-08-31 | Micron Technology, Inc. | Method of forming chalcogenide comprising devices and method of forming a programmable memory cell of memory circuitry |
US6955940B2 (en) | 2001-08-29 | 2005-10-18 | Micron Technology, Inc. | Method of forming chalcogenide comprising devices |
US20030047765A1 (en) | 2001-08-30 | 2003-03-13 | Campbell Kristy A. | Stoichiometry for chalcogenide glasses useful for memory devices and method of formation |
US6815818B2 (en) | 2001-11-19 | 2004-11-09 | Micron Technology, Inc. | Electrode structure for use in an integrated circuit |
US6791859B2 (en) | 2001-11-20 | 2004-09-14 | Micron Technology, Inc. | Complementary bit PCRAM sense amplifier and method of operation |
US6873538B2 (en) | 2001-12-20 | 2005-03-29 | Micron Technology, Inc. | Programmable conductor random access memory and a method for writing thereto |
US6909656B2 (en) | 2002-01-04 | 2005-06-21 | Micron Technology, Inc. | PCRAM rewrite prevention |
US20030143782A1 (en) | 2002-01-31 | 2003-07-31 | Gilton Terry L. | Methods of forming germanium selenide comprising devices and methods of forming silver selenide comprising structures |
US6867064B2 (en) | 2002-02-15 | 2005-03-15 | Micron Technology, Inc. | Method to alter chalcogenide glass for improved switching characteristics |
US6791885B2 (en) | 2002-02-19 | 2004-09-14 | Micron Technology, Inc. | Programmable conductor random access memory and method for sensing same |
US6891749B2 (en) | 2002-02-20 | 2005-05-10 | Micron Technology, Inc. | Resistance variable ‘on ’ memory |
US7151273B2 (en) | 2002-02-20 | 2006-12-19 | Micron Technology, Inc. | Silver-selenide/chalcogenide glass stack for resistance variable memory |
US7087919B2 (en) | 2002-02-20 | 2006-08-08 | Micron Technology, Inc. | Layered resistance variable memory device and method of fabrication |
US6809362B2 (en) | 2002-02-20 | 2004-10-26 | Micron Technology, Inc. | Multiple data state memory cell |
US6937528B2 (en) | 2002-03-05 | 2005-08-30 | Micron Technology, Inc. | Variable resistance memory and method for sensing same |
US6849868B2 (en) | 2002-03-14 | 2005-02-01 | Micron Technology, Inc. | Methods and apparatus for resistance variable material cells |
US6855975B2 (en) | 2002-04-10 | 2005-02-15 | Micron Technology, Inc. | Thin film diode integrated with chalcogenide memory cell |
US6858482B2 (en) | 2002-04-10 | 2005-02-22 | Micron Technology, Inc. | Method of manufacture of programmable switching circuits and memory cells employing a glass layer |
US6864500B2 (en) | 2002-04-10 | 2005-03-08 | Micron Technology, Inc. | Programmable conductor memory cell structure |
US6825135B2 (en) | 2002-06-06 | 2004-11-30 | Micron Technology, Inc. | Elimination of dendrite formation during metal/chalcogenide glass deposition |
US6890790B2 (en) | 2002-06-06 | 2005-05-10 | Micron Technology, Inc. | Co-sputter deposition of metal-doped chalcogenides |
US7015494B2 (en) | 2002-07-10 | 2006-03-21 | Micron Technology, Inc. | Assemblies displaying differential negative resistance |
US7209378B2 (en) | 2002-08-08 | 2007-04-24 | Micron Technology, Inc. | Columnar 1T-N memory cell structure |
US7018863B2 (en) | 2002-08-22 | 2006-03-28 | Micron Technology, Inc. | Method of manufacture of a resistance variable memory cell |
US6831019B1 (en) | 2002-08-29 | 2004-12-14 | Micron Technology, Inc. | Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes |
US6867114B2 (en) | 2002-08-29 | 2005-03-15 | Micron Technology Inc. | Methods to form a memory cell with metal-rich metal chalcogenide |
US6867996B2 (en) | 2002-08-29 | 2005-03-15 | Micron Technology, Inc. | Single-polarity programmable resistance-variable memory element |
US7010644B2 (en) | 2002-08-29 | 2006-03-07 | Micron Technology, Inc. | Software refreshed memory device and method |
US7294527B2 (en) | 2002-08-29 | 2007-11-13 | Micron Technology Inc. | Method of forming a memory cell |
US7364644B2 (en) | 2002-08-29 | 2008-04-29 | Micron Technology, Inc. | Silver selenide film stoichiometry and morphology control in sputter deposition |
US6864521B2 (en) | 2002-08-29 | 2005-03-08 | Micron Technology, Inc. | Method to control silver concentration in a resistance variable memory element |
US7163837B2 (en) | 2002-08-29 | 2007-01-16 | Micron Technology, Inc. | Method of forming a resistance variable memory element |
US6856002B2 (en) | 2002-08-29 | 2005-02-15 | Micron Technology, Inc. | Graded GexSe100-x concentration in PCRAM |
US6985377B2 (en) | 2002-10-15 | 2006-01-10 | Nanochip, Inc. | Phase change media for high density data storage |
US6813178B2 (en) | 2003-03-12 | 2004-11-02 | Micron Technology, Inc. | Chalcogenide glass constant current device, and its method of fabrication and operation |
US7022579B2 (en) | 2003-03-14 | 2006-04-04 | Micron Technology, Inc. | Method for filling via with metal |
US7050327B2 (en) | 2003-04-10 | 2006-05-23 | Micron Technology, Inc. | Differential negative resistance memory |
US6930909B2 (en) | 2003-06-25 | 2005-08-16 | Micron Technology, Inc. | Memory device and methods of controlling resistance variation and resistance profile drift |
US6961277B2 (en) | 2003-07-08 | 2005-11-01 | Micron Technology, Inc. | Method of refreshing a PCRAM memory device |
US7061004B2 (en) | 2003-07-21 | 2006-06-13 | Micron Technology, Inc. | Resistance variable memory elements and methods of formation |
US6903361B2 (en) | 2003-09-17 | 2005-06-07 | Micron Technology, Inc. | Non-volatile memory structure |
US7153721B2 (en) | 2004-01-28 | 2006-12-26 | Micron Technology, Inc. | Resistance variable memory elements based on polarized silver-selenide network growth |
US7105864B2 (en) | 2004-01-29 | 2006-09-12 | Micron Technology, Inc. | Non-volatile zero field splitting resonance memory |
US7583551B2 (en) | 2004-03-10 | 2009-09-01 | Micron Technology, Inc. | Power management control and controlling memory refresh operations |
US7098068B2 (en) | 2004-03-10 | 2006-08-29 | Micron Technology, Inc. | Method of forming a chalcogenide material containing device |
US7301887B2 (en) | 2004-04-16 | 2007-11-27 | Nanochip, Inc. | Methods for erasing bit cells in a high density data storage device |
US7379412B2 (en) | 2004-04-16 | 2008-05-27 | Nanochip, Inc. | Methods for writing and reading highly resolved domains for high density data storage |
US20050232061A1 (en) | 2004-04-16 | 2005-10-20 | Rust Thomas F | Systems for writing and reading highly resolved domains for high density data storage |
US7354793B2 (en) | 2004-08-12 | 2008-04-08 | Micron Technology, Inc. | Method of forming a PCRAM device incorporating a resistance-variable chalocogenide element |
US7326950B2 (en) | 2004-07-19 | 2008-02-05 | Micron Technology, Inc. | Memory device with switching glass layer |
US7190048B2 (en) | 2004-07-19 | 2007-03-13 | Micron Technology, Inc. | Resistance variable memory device and method of fabrication |
US7365411B2 (en) | 2004-08-12 | 2008-04-29 | Micron Technology, Inc. | Resistance variable memory with temperature tolerant materials |
US7151688B2 (en) | 2004-09-01 | 2006-12-19 | Micron Technology, Inc. | Sensing of resistance variable memory devices |
US7374174B2 (en) | 2004-12-22 | 2008-05-20 | Micron Technology, Inc. | Small electrode for resistance variable devices |
US7317200B2 (en) | 2005-02-23 | 2008-01-08 | Micron Technology, Inc. | SnSe-based limited reprogrammable cell |
US7269044B2 (en) | 2005-04-22 | 2007-09-11 | Micron Technology, Inc. | Method and apparatus for accessing a memory array |
US7709289B2 (en) | 2005-04-22 | 2010-05-04 | Micron Technology, Inc. | Memory elements having patterned electrodes and method of forming the same |
US7427770B2 (en) | 2005-04-22 | 2008-09-23 | Micron Technology, Inc. | Memory array for increased bit density |
US7269079B2 (en) | 2005-05-16 | 2007-09-11 | Micron Technology, Inc. | Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory |
US7233520B2 (en) | 2005-07-08 | 2007-06-19 | Micron Technology, Inc. | Process for erasing chalcogenide variable resistance memory bits |
US7274034B2 (en) | 2005-08-01 | 2007-09-25 | Micron Technology, Inc. | Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication |
US7317567B2 (en) | 2005-08-02 | 2008-01-08 | Micron Technology, Inc. | Method and apparatus for providing color changing thin film material |
US7332735B2 (en) | 2005-08-02 | 2008-02-19 | Micron Technology, Inc. | Phase change memory cell and method of formation |
US7579615B2 (en) | 2005-08-09 | 2009-08-25 | Micron Technology, Inc. | Access transistor for memory device |
US7304368B2 (en) | 2005-08-11 | 2007-12-04 | Micron Technology, Inc. | Chalcogenide-based electrokinetic memory element and method of forming the same |
US7251154B2 (en) | 2005-08-15 | 2007-07-31 | Micron Technology, Inc. | Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance |
US7277313B2 (en) | 2005-08-31 | 2007-10-02 | Micron Technology, Inc. | Resistance variable memory element with threshold device and method of forming the same |
US7560723B2 (en) | 2006-08-29 | 2009-07-14 | Micron Technology, Inc. | Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication |
US7969769B2 (en) * | 2007-03-15 | 2011-06-28 | Ovonyx, Inc. | Multi-terminal chalcogenide logic circuits |
US8223580B2 (en) * | 2008-06-17 | 2012-07-17 | Ovonyx, Inc. | Method and apparatus for decoding memory |
US8467236B2 (en) | 2008-08-01 | 2013-06-18 | Boise State University | Continuously variable resistor |
US8159857B2 (en) * | 2009-09-21 | 2012-04-17 | Infineon Technologies Ag | Electronic device with a programmable resistive element and a method for blocking a device |
US8384429B2 (en) | 2010-04-16 | 2013-02-26 | Infineon Technologies Ag | Integrated circuit and method for manufacturing same |
US20120244969A1 (en) | 2011-03-25 | 2012-09-27 | May Patents Ltd. | System and Method for a Motion Sensing Device |
US8711603B2 (en) * | 2012-05-11 | 2014-04-29 | Micron Technology, Inc. | Permutational memory cells |
GB2505429A (en) | 2012-08-29 | 2014-03-05 | Ibm | Semiconductor stack comprising plurality of phase-change memory (PCM) cells and performing a logic operation |
US9924708B2 (en) | 2014-09-08 | 2018-03-27 | Toss a Call, LLC | Throwable game call device |
KR102520746B1 (ko) * | 2021-06-30 | 2023-04-13 | 한국과학기술연구원 | 나노 오실레이터 소자 및 이를 이용한 연산 유닛 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3116426A (en) * | 1959-11-16 | 1963-12-31 | Kokusai Denshin Denwa Co Ltd | Logic circuits employing bridge networks comprising transformer secondaries and nu-type conductivity curve negative resistance elements |
US3214605A (en) * | 1960-07-11 | 1965-10-26 | Bell Telephone Labor Inc | Logic arrangements |
FR1296221A (fr) * | 1960-07-29 | 1962-06-15 | Olivetti & Co Spa | Circuit logique |
GB907656A (en) * | 1960-07-29 | 1962-10-10 | Olivetti & Co Spa | Tunnel diode logic circuit |
FR1300089A (fr) * | 1960-09-19 | 1962-07-27 | Rca Corp | Circuits logiques à diode tunnel |
US3209163A (en) * | 1961-07-07 | 1965-09-28 | Westinghouse Electric Corp | Semiconductor logic circuit |
US3209165A (en) * | 1961-10-16 | 1965-09-28 | Westinghouse Electric Corp | Tunnel diode nor circuit |
US3210568A (en) * | 1962-05-01 | 1965-10-05 | Sylvania Electric Prod | Directly coupled unbalanced tunnel diode pairs for logic circuits |
US3238385A (en) * | 1963-09-03 | 1966-03-01 | Donald O Schultz | Exclusive "or" tunnel diode logic circuit |
US3253165A (en) * | 1963-12-23 | 1966-05-24 | Rca Corp | Current steering logic circuit employing negative resistance devices in the output networks of the amplifying devices |
DE1801649C3 (de) * | 1968-10-07 | 1974-10-10 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Inverter mit einer Tunneldiode |
US4731610A (en) * | 1986-01-21 | 1988-03-15 | Ovonic Imaging Systems, Inc. | Balanced drive electronic matrix system and method of operating the same |
EP0242902A3 (en) * | 1986-03-26 | 1988-08-31 | Raychem Limited | Protection device |
US4782340A (en) * | 1986-08-22 | 1988-11-01 | Energy Conversion Devices, Inc. | Electronic arrays having thin film line drivers |
US4804490A (en) * | 1987-10-13 | 1989-02-14 | Energy Conversion Devices, Inc. | Method of fabricating stabilized threshold switching material |
US5177567A (en) * | 1991-07-19 | 1993-01-05 | Energy Conversion Devices, Inc. | Thin-film structure for chalcogenide electrical switching devices and process therefor |
US5313117A (en) * | 1991-07-22 | 1994-05-17 | Nippon Telegraph And Telephone Corporation | Semiconductor logic circuit using two n-type negative resistance devices |
JPH0629590A (ja) * | 1992-07-07 | 1994-02-04 | Rohm Co Ltd | スイッチング素子 |
US5543737A (en) * | 1995-02-10 | 1996-08-06 | Energy Conversion Devices, Inc. | Logical operation circuit employing two-terminal chalcogenide switches |
KR0156171B1 (ko) * | 1995-08-01 | 1998-12-15 | 문정환 | 액정 디스플레이 구동회로 |
-
1995
- 1995-11-28 US US08/565,187 patent/US5694054A/en not_active Expired - Fee Related
-
1996
- 1996-11-27 CA CA002236119A patent/CA2236119C/en not_active Expired - Fee Related
- 1996-11-27 EP EP96942816A patent/EP0864204B1/en not_active Expired - Lifetime
- 1996-11-27 DE DE69630139T patent/DE69630139T2/de not_active Expired - Fee Related
- 1996-11-27 WO PCT/US1996/018979 patent/WO1997020391A1/en active IP Right Grant
- 1996-11-27 AU AU11417/97A patent/AU1141797A/en not_active Abandoned
- 1996-11-27 JP JP9520645A patent/JP2000501265A/ja active Pending
- 1996-11-27 KR KR1019980703986A patent/KR100354782B1/ko not_active IP Right Cessation
- 1996-11-27 UA UA98063316A patent/UA46076C2/uk unknown
-
1998
- 1998-05-27 MX MX9804240A patent/MX9804240A/es unknown
Also Published As
Publication number | Publication date |
---|---|
CA2236119C (en) | 2004-05-11 |
DE69630139D1 (de) | 2003-10-30 |
AU1141797A (en) | 1997-06-19 |
EP0864204A4 (en) | 1999-09-08 |
WO1997020391A1 (en) | 1997-06-05 |
KR100354782B1 (ko) | 2002-11-18 |
DE69630139T2 (de) | 2004-07-22 |
US5694054A (en) | 1997-12-02 |
UA46076C2 (uk) | 2002-05-15 |
KR19990071709A (ko) | 1999-09-27 |
CA2236119A1 (en) | 1997-06-05 |
EP0864204A1 (en) | 1998-09-16 |
JP2000501265A (ja) | 2000-02-02 |
EP0864204B1 (en) | 2003-09-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
MX9804240A (es) | Manejadores de integrados para pantallas planas que emplean elementos logicos de calcogenidos. | |
US6064158A (en) | Electroluminescent display device | |
KR100455014B1 (ko) | 양방향 시프트 레지스터 | |
CA2303302A1 (en) | High density column drivers for an active matrix display | |
KR950002232A (ko) | 표시 데이타 구동용 집적 회로 | |
US6731266B1 (en) | Driving device and driving method for a display device | |
KR19990031752A (ko) | 액정표시소자의 구동장치 | |
EP0899713A3 (en) | Column driver for an active matrix liquid crystal display | |
US5818406A (en) | Driver circuit for liquid crystal display device | |
EP0323578A3 (en) | Crosspoint switching array | |
WO2003094362A3 (en) | Liquid crystal display and method for driving thereof | |
WO2002095914A3 (en) | Half-bridge gate driver circuit | |
KR950019871A (ko) | 액정표시장치 및 그 구동방법 | |
KR20020080334A (ko) | 매트릭스 디스플레이 디바이스 | |
US20030043127A1 (en) | Display device, display driving method, and display driver circuit | |
KR100604829B1 (ko) | 디스플레이 장치 | |
KR970048738A (ko) | 구동회로를 내장한 액정 표시장치 및 그 구동방법 | |
WO1998052177A3 (en) | Method and apparatus for driving a capacitive display device | |
EP0351820B1 (en) | Output circuit | |
KR100422593B1 (ko) | 디코딩 장치 및 방법과 이를 사용한 저항열디지털/아날로그 컨버팅 장치 및 방법 | |
TW338828B (en) | Static semiconductor memory | |
US20030006953A1 (en) | Scan driving circuit and driving method for active matrix liquid crystal display | |
KR100243824B1 (ko) | 디스플레이 드라이버 | |
AU2002229899A1 (en) | Panel form loudspeaker | |
US6304240B1 (en) | Drive circuit for liquid crystal display apparatus |