MX9201784A - Control de temperatura para fuente de luz de semiconductor. - Google Patents

Control de temperatura para fuente de luz de semiconductor.

Info

Publication number
MX9201784A
MX9201784A MX9201784A MX9201784A MX9201784A MX 9201784 A MX9201784 A MX 9201784A MX 9201784 A MX9201784 A MX 9201784A MX 9201784 A MX9201784 A MX 9201784A MX 9201784 A MX9201784 A MX 9201784A
Authority
MX
Mexico
Prior art keywords
light source
temperature control
semiconductor light
semiconductor
temperature
Prior art date
Application number
MX9201784A
Other languages
English (en)
Inventor
Charles R Winston Jr
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inc filed Critical Honeywell Inc
Publication of MX9201784A publication Critical patent/MX9201784A/es

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/024Arrangements for thermal management
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01KMEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/01Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0207Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
    • H01L27/0211Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique adapted for requirements of temperature
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/024Arrangements for thermal management
    • H01S5/02453Heating, e.g. the laser is heated for stabilisation against temperature fluctuations of the environment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/04Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042Electrical excitation ; Circuits therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068Stabilisation of laser output parameters
    • H01S5/06804Stabilisation of laser output parameters by monitoring an external parameter, e.g. temperature
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068Stabilisation of laser output parameters
    • H01S5/06808Stabilisation of laser output parameters by monitoring the electrical laser parameters, e.g. voltage or current
MX9201784A 1991-04-15 1992-04-15 Control de temperatura para fuente de luz de semiconductor. MX9201784A (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US68526991A 1991-04-15 1991-04-15

Publications (1)

Publication Number Publication Date
MX9201784A true MX9201784A (es) 1992-10-01

Family

ID=24751466

Family Applications (1)

Application Number Title Priority Date Filing Date
MX9201784A MX9201784A (es) 1991-04-15 1992-04-15 Control de temperatura para fuente de luz de semiconductor.

Country Status (4)

Country Link
EP (1) EP0581860A1 (es)
CA (1) CA2096519A1 (es)
MX (1) MX9201784A (es)
WO (1) WO1992019014A1 (es)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4434266B4 (de) * 1994-09-24 2005-05-25 Byk Gardner Gmbh Verfahren zur Berücksichtigung der Temperaturabhängigkeit von optoelektronischen Dioden
DE19714659A1 (de) * 1997-04-09 1998-10-15 Siemens Ag Optoelektronisches Bauelement
US5955793A (en) * 1998-02-11 1999-09-21 Therm-O-Disc, Incorporated High sensitivity diode temperature sensor with adjustable current source
GB2369437A (en) * 2000-11-28 2002-05-29 Graviner Ltd Kidde An LED based temperature sensor
EP1648057A1 (en) * 2004-10-13 2006-04-19 Harman Becker Automotive Systems GmbH Semiconductor laser device
US9429426B2 (en) 2014-01-22 2016-08-30 Northrop Grumman Systems Corporation Adaptive inertial measurement system and method
CN111201684B (zh) * 2017-12-15 2023-07-25 株式会社堀场制作所 半导体激光装置及其驱动方法、气体分析装置和存储介质
US11536899B2 (en) 2020-06-30 2022-12-27 Openlight Photonics, Inc. Integrated bandgap temperature sensor

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3395265A (en) * 1965-07-26 1968-07-30 Teledyne Inc Temperature controlled microcircuit
US3973852A (en) * 1974-08-30 1976-08-10 The Dow Chemical Company Method and apparatus for measuring particulate concentration in the atmosphere
JPS5649559A (en) * 1979-09-29 1981-05-06 Nec Corp Semiconductor integrated circuit device
JPS57188894A (en) * 1981-05-18 1982-11-19 Hitachi Ltd Semiconductor laser device
JPS61265885A (ja) * 1985-05-20 1986-11-25 Nec Corp 半導体レ−ザ及びその駆動方法
JPS6222494A (ja) * 1985-07-22 1987-01-30 Yokogawa Electric Corp 半導体レ−ザ安定装置
EP0238484A1 (en) * 1985-09-24 1987-09-30 Bell Communications Research, Inc. Temperature stabilization of injection lasers
US4808009A (en) * 1986-06-05 1989-02-28 Rosemount, Inc. Integrated semiconductor resistance temperature sensor and resistive heater
JPS63239887A (ja) * 1987-03-27 1988-10-05 Hitachi Ltd 半導体レ−ザ−装置
JP2725012B2 (ja) * 1988-03-04 1998-03-09 富士通株式会社 半導体発光装置
GB2224374A (en) * 1988-08-24 1990-05-02 Plessey Co Plc Temperature control of light-emitting devices
US5024535A (en) * 1989-12-20 1991-06-18 United Technologies Corporation Semiconductor light source temperature measurement

Also Published As

Publication number Publication date
EP0581860A1 (en) 1994-02-09
WO1992019014A1 (en) 1992-10-29
CA2096519A1 (en) 1992-10-16

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Legal Events

Date Code Title Description
FA Abandonment or withdrawal