MX9201784A - Control de temperatura para fuente de luz de semiconductor. - Google Patents
Control de temperatura para fuente de luz de semiconductor.Info
- Publication number
- MX9201784A MX9201784A MX9201784A MX9201784A MX9201784A MX 9201784 A MX9201784 A MX 9201784A MX 9201784 A MX9201784 A MX 9201784A MX 9201784 A MX9201784 A MX 9201784A MX 9201784 A MX9201784 A MX 9201784A
- Authority
- MX
- Mexico
- Prior art keywords
- light source
- temperature control
- semiconductor light
- semiconductor
- temperature
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
- H01L27/0211—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique adapted for requirements of temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02453—Heating, e.g. the laser is heated for stabilisation against temperature fluctuations of the environment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/06804—Stabilisation of laser output parameters by monitoring an external parameter, e.g. temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/06808—Stabilisation of laser output parameters by monitoring the electrical laser parameters, e.g. voltage or current
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US68526991A | 1991-04-15 | 1991-04-15 |
Publications (1)
Publication Number | Publication Date |
---|---|
MX9201784A true MX9201784A (es) | 1992-10-01 |
Family
ID=24751466
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MX9201784A MX9201784A (es) | 1991-04-15 | 1992-04-15 | Control de temperatura para fuente de luz de semiconductor. |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0581860A1 (es) |
CA (1) | CA2096519A1 (es) |
MX (1) | MX9201784A (es) |
WO (1) | WO1992019014A1 (es) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4434266B4 (de) * | 1994-09-24 | 2005-05-25 | Byk Gardner Gmbh | Verfahren zur Berücksichtigung der Temperaturabhängigkeit von optoelektronischen Dioden |
DE19714659A1 (de) * | 1997-04-09 | 1998-10-15 | Siemens Ag | Optoelektronisches Bauelement |
US5955793A (en) * | 1998-02-11 | 1999-09-21 | Therm-O-Disc, Incorporated | High sensitivity diode temperature sensor with adjustable current source |
GB2369437A (en) * | 2000-11-28 | 2002-05-29 | Graviner Ltd Kidde | An LED based temperature sensor |
EP1648057A1 (en) * | 2004-10-13 | 2006-04-19 | Harman Becker Automotive Systems GmbH | Semiconductor laser device |
US9429426B2 (en) | 2014-01-22 | 2016-08-30 | Northrop Grumman Systems Corporation | Adaptive inertial measurement system and method |
CN111201684B (zh) * | 2017-12-15 | 2023-07-25 | 株式会社堀场制作所 | 半导体激光装置及其驱动方法、气体分析装置和存储介质 |
US11536899B2 (en) | 2020-06-30 | 2022-12-27 | Openlight Photonics, Inc. | Integrated bandgap temperature sensor |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3395265A (en) * | 1965-07-26 | 1968-07-30 | Teledyne Inc | Temperature controlled microcircuit |
US3973852A (en) * | 1974-08-30 | 1976-08-10 | The Dow Chemical Company | Method and apparatus for measuring particulate concentration in the atmosphere |
JPS5649559A (en) * | 1979-09-29 | 1981-05-06 | Nec Corp | Semiconductor integrated circuit device |
JPS57188894A (en) * | 1981-05-18 | 1982-11-19 | Hitachi Ltd | Semiconductor laser device |
JPS61265885A (ja) * | 1985-05-20 | 1986-11-25 | Nec Corp | 半導体レ−ザ及びその駆動方法 |
JPS6222494A (ja) * | 1985-07-22 | 1987-01-30 | Yokogawa Electric Corp | 半導体レ−ザ安定装置 |
EP0238484A1 (en) * | 1985-09-24 | 1987-09-30 | Bell Communications Research, Inc. | Temperature stabilization of injection lasers |
US4808009A (en) * | 1986-06-05 | 1989-02-28 | Rosemount, Inc. | Integrated semiconductor resistance temperature sensor and resistive heater |
JPS63239887A (ja) * | 1987-03-27 | 1988-10-05 | Hitachi Ltd | 半導体レ−ザ−装置 |
JP2725012B2 (ja) * | 1988-03-04 | 1998-03-09 | 富士通株式会社 | 半導体発光装置 |
GB2224374A (en) * | 1988-08-24 | 1990-05-02 | Plessey Co Plc | Temperature control of light-emitting devices |
US5024535A (en) * | 1989-12-20 | 1991-06-18 | United Technologies Corporation | Semiconductor light source temperature measurement |
-
1992
- 1992-04-13 EP EP19920911184 patent/EP0581860A1/en not_active Withdrawn
- 1992-04-13 WO PCT/US1992/002972 patent/WO1992019014A1/en not_active Application Discontinuation
- 1992-04-13 CA CA 2096519 patent/CA2096519A1/en not_active Abandoned
- 1992-04-15 MX MX9201784A patent/MX9201784A/es not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
EP0581860A1 (en) | 1994-02-09 |
WO1992019014A1 (en) | 1992-10-29 |
CA2096519A1 (en) | 1992-10-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FA | Abandonment or withdrawal |