CA2096519A1 - Semiconductor light source temperature control - Google Patents
Semiconductor light source temperature controlInfo
- Publication number
- CA2096519A1 CA2096519A1 CA 2096519 CA2096519A CA2096519A1 CA 2096519 A1 CA2096519 A1 CA 2096519A1 CA 2096519 CA2096519 CA 2096519 CA 2096519 A CA2096519 A CA 2096519A CA 2096519 A1 CA2096519 A1 CA 2096519A1
- Authority
- CA
- Canada
- Prior art keywords
- light source
- temperature
- substrate
- diode
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 79
- 238000010438 heat treatment Methods 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims description 8
- 239000000835 fiber Substances 0.000 claims description 3
- 230000001427 coherent effect Effects 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 7
- 230000004044 response Effects 0.000 description 7
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000002955 isolation Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- 101150034533 ATIC gene Proteins 0.000 description 1
- 101100162020 Mesorhizobium japonicum (strain LMG 29417 / CECT 9101 / MAFF 303099) adc3 gene Proteins 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002674 ointment Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
- H01L27/0211—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique adapted for requirements of temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02453—Heating, e.g. the laser is heated for stabilisation against temperature fluctuations of the environment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/06804—Stabilisation of laser output parameters by monitoring an external parameter, e.g. temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/06808—Stabilisation of laser output parameters by monitoring the electrical laser parameters, e.g. voltage or current
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
A heater is fabricated in the same semiconductor substrate (10) with a light source (14) and a temperature sensor (12). A current is passed through the sensor and a voltage across it is sensed, the voltage indicative of actual substrate temperature. This temperature is compared to desired substrate temperature and any difference therebetween drives the heater to appropriately stabilize the substrate temperature at or near the desired temperature.
Alternatively, an existing light source (14) fabricated on the substrate (10) has a current passed therethrough and a resulting voltage across the light source is sensed, the voltage and current being indicative of actual substrate temperature. The actual substrate temperature is compared to desired temperature and any difference therebetween drives the heating device (16) to appropriately stabilize the substrate temperature at or near the desired temperature. The circuitry for sensing the voltage across the sensor (12) along with circuitry for comparing the sensed and desired voltages and the heater driver (16) either may be fabricated on the substrate (10) or located external thereto.
Alternatively, an existing light source (14) fabricated on the substrate (10) has a current passed therethrough and a resulting voltage across the light source is sensed, the voltage and current being indicative of actual substrate temperature. The actual substrate temperature is compared to desired temperature and any difference therebetween drives the heating device (16) to appropriately stabilize the substrate temperature at or near the desired temperature. The circuitry for sensing the voltage across the sensor (12) along with circuitry for comparing the sensed and desired voltages and the heater driver (16) either may be fabricated on the substrate (10) or located external thereto.
Description
S-~092/19014 PCT/US92/02g72 ` 209~.19 Description Semiconductor Light Source Temperature Control Technical Field This invention relates to temperature control devices, and more particularly to such devices for controlling the temperature of a light source fabricated on a semiconductor substrate.
BacXground Art A fiber optic gyroscope (FOG) includes a source of light energy, e.g., a laser diode, which provides coherant light split into two beams that are launched into each end of a coil. When no rotational disturbances are present, the beams propagate Pqually in opposite directions around the coil and recombine to form an interference fringe pattern at a detector.
When the coil is subject to a rotation about an axis normal thereto, a nonreciprocal disturbance occurs known as the Sagnac effect, whereby the opposing light beams take di~ferent times to traverse the coil. This causes a phase difference between the beams and a shift of the fringe pattern. The magnitude and direction of the fringe shift is proportional, respectively, to the rate and sense of the rotation applied to the coil.
A phase difference between the two beams can be compensated for (i.e., nulled) by imposing a further nonreciprocal phase shift on the beams in an equal and - opposite manner by using a phase modulator, e.g., a lithium niobate integrated optic phase modulatnr. In a serrodyne closed-loop FOG, a phase modulator is driven by a linear ramp or a step ramp signal. The modulator .. .. -- . : : . ... .
W~2/19014 PCT/US92/029~ i ~, ~ 9 ~
induces a phase shift in the light passing through which is equal and opposite to the Sagnac phase shiftO
When the magnitude of the ramp is held constant to an amplitude corresponding to one wavelength, and the duration of flyback time is approximately zero, gyro rate in~ormation is given by:
n = (SF) * ~f) where n is the angular rate of gyro rotation, f ls the frequency of the linear ramp, and SF is a scale ~actor.
The ramp frequency can be directly measured t and the scale factor is a ~unction of the source wavelength. In turn, the source wavelength is a function of the source temperature, e.g., 0.03%/oc for a laser diode. Thus, it is important to know the source temperature so that either a scale factor correction can be made for changes in temperature, or the source temperature may be controlled to maintain a constant wavelength and scale factor.
Some known packaged semiconductor light sources comprise a temperature control loop consisting of a thermistor mounted to a substrate or package surface for measuring source temperature, and a means to cool the source package, such as a thermo-electric cooler.
The cooler attempts to maintain the source at a constant temperature, thereby removing temperature-induced wavelength variations.
However, the thermistor does not directly measure the source's temperature, which results in two types of error. A steady-state error occurs due to the thermal resistance between the thermistor and the source. This error may vary further with the source's efficiency, which can change due to aging. A second type of error is delayed response caused by thermal transport lag and , : ' , ' - ' ' .
.: ~ ' : :
. . . - - , .
~` ` 2 0 9 ~ ~ 1 9 PCT/US~2~0~972 the thermistor time constant. This error is most prevalent during system power up and source power transients.
Further, the cooler is part of the thermistor package and not the substrate itsel~. As such, the cooler is not directly controlling the temperatUre of the substrate itself, but inætead i5 controlling the temperature of the package to which the substrate is mounted. This adds further thermal time delays in stabilizing substrate temperature.
In many high-accuracy device applications, desired warm up time may be given in terms of seconds; however, thermal stabilization times of the source, thermistor and cooler may actually be measured in minutes. This undesirably long warm-up time may seriously affect device accuracies.
Disclosure of the Invention Objects of the present invention include provision of an improved semiconductor substrate temperature measurement and maintenance scheme which is directly responsive to substrate temperature in maintaining the substrate at a desired temperature, thereby removing temperature-induced wavelength variations in a light source fabricated on the substrate.
According to one aspect of the present invention, a heater is fabricated in the same semiconductor substrate in which a light source and a temperature sensor are fabricated, an electrical current is passed through the sensor and an electrical volta~e developed across the sensor is sensed, the voltage being indicative of actual substrate temperature, the actual . . .
- - : .. : .: :
':- ': : - -.- ': ' ," :
.
WO9~ Ot4 rCTJUS~10 substrate temperature is compared to desired substrate temperature and any difference therebetween drives the heater to appropriately stabilize the ~ubstrate temperature at or near the desired temperature.
S In further accord with this aspect of the invention, the circuitry for s~nsing the voltage developed across the sensor along with circuitry for comparing the sensed voltage to desired voltage and circuitry for driving the heater are fabricated on the substrate.
In still further accord with this aspect of the present invention, the circuitry for ~ensing the voltage developed across the sensor along with - circuitry ~or comparing the sensed voltage to desired voltage and circuitry for driving the heater are located external to the substrate.
According to a second aspect of the present invention, an existing light source fabricated on a semiconductor substrate has an electrical current passed therethrough and a resulting electrical voltage developed across the light source is sensed, the voltage and current being indicative of actual substrate temperature, the actual substrate temperature is compared to desired temperature and any difference therebetween drives the heating device to appropriately stabili2e the substrate temparature at or near the desir~d temperature.
The present invention represents an advancement over previous semiconductor substrate temperature maintenance schemes, such as an external thermistor and cooler. This is due to reduction in thermal xesistance between the light source, temperature sensing device, and heater, which now are all fabricated in th~ same - ~ ':
. . : " , .
~2/19~4 ~ Q 9 6 ~ PCT/~592/02972 substrata. ~here~ore, steady state errors and transport lags due to thermal resistance are greatly reduced. Thus, more accurate temperature information can be supplied to a control loop to better maintain the light source at a constant desired temperature.
In addition, warm up time of high accuracy devices e~ploying the present invention is reduced due to the rapid response time to changes in source temperat.ure.
Further, the haater operates more efficiently than prior art external coolers since the heater, by being fabricated on the substrate, is heating a signi~icantly smaller thermal mass, i.e., that of the substrate, instead of both the substrate and cooler device package. This results in further power savings. Also, by fabricating the heater on the substrate, the added weight and volume of prior art external coolers are avoided.
The foregoing and othex objects, features and advantages of the present invention will become more apparent in the light of the following detailed description of an exemplary e~bodiment thereof, as illustrated in the accompanying drawings.
Brief Description of the Drawings Fig. l is a sche~atic block diagram of circuitry fabricated on an integrated circuit (IC) in accordance with the present invention;
Figs. 2~a)-(d) are structural diagrams of the IC
of Fig. l in various stages of an epitaxial-diffused fabrication process:
Fig. 3 is a structural diagram of the IC of Figs.
BacXground Art A fiber optic gyroscope (FOG) includes a source of light energy, e.g., a laser diode, which provides coherant light split into two beams that are launched into each end of a coil. When no rotational disturbances are present, the beams propagate Pqually in opposite directions around the coil and recombine to form an interference fringe pattern at a detector.
When the coil is subject to a rotation about an axis normal thereto, a nonreciprocal disturbance occurs known as the Sagnac effect, whereby the opposing light beams take di~ferent times to traverse the coil. This causes a phase difference between the beams and a shift of the fringe pattern. The magnitude and direction of the fringe shift is proportional, respectively, to the rate and sense of the rotation applied to the coil.
A phase difference between the two beams can be compensated for (i.e., nulled) by imposing a further nonreciprocal phase shift on the beams in an equal and - opposite manner by using a phase modulator, e.g., a lithium niobate integrated optic phase modulatnr. In a serrodyne closed-loop FOG, a phase modulator is driven by a linear ramp or a step ramp signal. The modulator .. .. -- . : : . ... .
W~2/19014 PCT/US92/029~ i ~, ~ 9 ~
induces a phase shift in the light passing through which is equal and opposite to the Sagnac phase shiftO
When the magnitude of the ramp is held constant to an amplitude corresponding to one wavelength, and the duration of flyback time is approximately zero, gyro rate in~ormation is given by:
n = (SF) * ~f) where n is the angular rate of gyro rotation, f ls the frequency of the linear ramp, and SF is a scale ~actor.
The ramp frequency can be directly measured t and the scale factor is a ~unction of the source wavelength. In turn, the source wavelength is a function of the source temperature, e.g., 0.03%/oc for a laser diode. Thus, it is important to know the source temperature so that either a scale factor correction can be made for changes in temperature, or the source temperature may be controlled to maintain a constant wavelength and scale factor.
Some known packaged semiconductor light sources comprise a temperature control loop consisting of a thermistor mounted to a substrate or package surface for measuring source temperature, and a means to cool the source package, such as a thermo-electric cooler.
The cooler attempts to maintain the source at a constant temperature, thereby removing temperature-induced wavelength variations.
However, the thermistor does not directly measure the source's temperature, which results in two types of error. A steady-state error occurs due to the thermal resistance between the thermistor and the source. This error may vary further with the source's efficiency, which can change due to aging. A second type of error is delayed response caused by thermal transport lag and , : ' , ' - ' ' .
.: ~ ' : :
. . . - - , .
~` ` 2 0 9 ~ ~ 1 9 PCT/US~2~0~972 the thermistor time constant. This error is most prevalent during system power up and source power transients.
Further, the cooler is part of the thermistor package and not the substrate itsel~. As such, the cooler is not directly controlling the temperatUre of the substrate itself, but inætead i5 controlling the temperature of the package to which the substrate is mounted. This adds further thermal time delays in stabilizing substrate temperature.
In many high-accuracy device applications, desired warm up time may be given in terms of seconds; however, thermal stabilization times of the source, thermistor and cooler may actually be measured in minutes. This undesirably long warm-up time may seriously affect device accuracies.
Disclosure of the Invention Objects of the present invention include provision of an improved semiconductor substrate temperature measurement and maintenance scheme which is directly responsive to substrate temperature in maintaining the substrate at a desired temperature, thereby removing temperature-induced wavelength variations in a light source fabricated on the substrate.
According to one aspect of the present invention, a heater is fabricated in the same semiconductor substrate in which a light source and a temperature sensor are fabricated, an electrical current is passed through the sensor and an electrical volta~e developed across the sensor is sensed, the voltage being indicative of actual substrate temperature, the actual . . .
- - : .. : .: :
':- ': : - -.- ': ' ," :
.
WO9~ Ot4 rCTJUS~10 substrate temperature is compared to desired substrate temperature and any difference therebetween drives the heater to appropriately stabilize the ~ubstrate temperature at or near the desired temperature.
S In further accord with this aspect of the invention, the circuitry for s~nsing the voltage developed across the sensor along with circuitry for comparing the sensed voltage to desired voltage and circuitry for driving the heater are fabricated on the substrate.
In still further accord with this aspect of the present invention, the circuitry for ~ensing the voltage developed across the sensor along with - circuitry ~or comparing the sensed voltage to desired voltage and circuitry for driving the heater are located external to the substrate.
According to a second aspect of the present invention, an existing light source fabricated on a semiconductor substrate has an electrical current passed therethrough and a resulting electrical voltage developed across the light source is sensed, the voltage and current being indicative of actual substrate temperature, the actual substrate temperature is compared to desired temperature and any difference therebetween drives the heating device to appropriately stabili2e the substrate temparature at or near the desir~d temperature.
The present invention represents an advancement over previous semiconductor substrate temperature maintenance schemes, such as an external thermistor and cooler. This is due to reduction in thermal xesistance between the light source, temperature sensing device, and heater, which now are all fabricated in th~ same - ~ ':
. . : " , .
~2/19~4 ~ Q 9 6 ~ PCT/~592/02972 substrata. ~here~ore, steady state errors and transport lags due to thermal resistance are greatly reduced. Thus, more accurate temperature information can be supplied to a control loop to better maintain the light source at a constant desired temperature.
In addition, warm up time of high accuracy devices e~ploying the present invention is reduced due to the rapid response time to changes in source temperat.ure.
Further, the haater operates more efficiently than prior art external coolers since the heater, by being fabricated on the substrate, is heating a signi~icantly smaller thermal mass, i.e., that of the substrate, instead of both the substrate and cooler device package. This results in further power savings. Also, by fabricating the heater on the substrate, the added weight and volume of prior art external coolers are avoided.
The foregoing and othex objects, features and advantages of the present invention will become more apparent in the light of the following detailed description of an exemplary e~bodiment thereof, as illustrated in the accompanying drawings.
Brief Description of the Drawings Fig. l is a sche~atic block diagram of circuitry fabricated on an integrated circuit (IC) in accordance with the present invention;
Figs. 2~a)-(d) are structural diagrams of the IC
of Fig. l in various stages of an epitaxial-diffused fabrication process:
Fig. 3 is a structural diagram of the IC of Figs.
2(a)-(d) completely fabricated;
.. .
..
. , , . - : .
, . .. . - . .
. - . - ~ : .
- . ~ , .
:' .~ ~ .' - ' WO92/19014 PCT/US92/02 ~
'~ ~963~9 6 Fig. 4 is a graph of the voltage versus temperature relationship for a GaAs diode fabricated on the IC of Fig~ 3;
Fig. 5 is a schematic block diagram of circuitry s fabricated on an IC in accordance with an alternative embodiment of the present invention;
Fig. 6 is a schematic block diagram of circuitry fabricated on an IC in accordance with another alternative embodiment of the present invention; and Fig. 7 is a schematic block diagram of a detailed portion of the circuitry of the alternative embodiments of Figs. 5 and 6.
Best Mode for Carrying Out the Invention In Fig. l is illustrated a schematic diagram of circuitry fabricated on a portion of semiconductor substrate material lO: more particularly, the material comprising a monolithic IC lO. The IC has fabricated thereon, in accordance with the present invention, a temperature sensitive semiconductor device 12, e.g., a Gallium Arsenide (GaAs) diode 12, a semiconductor light source 14, e.g., a GaAs laser diode l4, and a semiconductor heating device 16, e.g., a semiconductor resistor 16. Other well known electronic components, some of which are described hereinafter, are fabricated onto the substrate as well. The sensing and light source diodes, heater and other components may all be fabricated onto the IC substrate using known epitaxial-diffused IC fabrication processesO
Referring to Fig. 2(a), the IC is formed by first providing a thin layer of substrate material 20, e.g., GaAs, doped with a high concentration of n-type donor .
.. . . . . . .
- :,' - ' ' -: . . ~ . .
' ' ' : ' - ~` . ' " ' : ' .
l-~v092~9014 2 ~ 9 ~ ~ ~ PCT/USg~J0~97~
atoms (i.e., atoms havin~ excess free electrons), one side of the layer 20 being lapped and polished. Next, an epitaxial growth procPss is used to grow a second layer 22 on the substrate 20. The epitaxial layer 22 has a different type or concentration of impurity atoms, e.g., a lower concentration of n-type impurity atoms.
In the epitaxial growth process, the substrate is exposed to a high temperature gaseous environment; the gas containing the substrate crystal material having a different concentration or different type vf impurity material. The crystal material in the gas is deposited on the polished side of the substrate. An oxide layer 24 is then formed on the epitaxial 22 layer by exposing the IC to a high temperature oxygen or steam atmosphere.
Re~erring to Fig. 2(b), an etching and diffusion process is performed where sections 26 of the oxide layer 24 are removed. Next, isolation diffusion takes place by exposing the assembly to an atmosphere containing the same impurities as the substrate impurities. The time and temperature of exposure is controlled to allow the impurities to penetrate the epitaxial layer and reach the substrate 20, thereby forming isolation regions 28 which allow electrical isolation between different circuit components.
A new oxide layer 24 i5 then formed and sections 30 of the layer are removed (Fig 2(c)) to form the -circuit components 32 (e.g., the sensing and light source diodes 12,14 and heater resistor 16). Component formation is accomplished using the aforementioned isolation diffusion process with a variety of diffusion atoms, such as n-type donor atoms or p-type acceptor .-. . . . ..
- : . . : ~ . .
. ~
-. , , .. : ., . , .. - ,: :,- .
- ~ . . -- . - ~ :
WOg2/19014 PCT~US92~0~97~
~,~96~3~ 8 atoms (i.e., atoms having excess free holes), to form the desired circuit components.
In addition to oxide layer formation and subsequent removal for i-cola~ion di~fusion, sections of oxide layer may be removed for formation of additional epitaxial growth layers 34, as illustrated in Fig.
2(d).
once the diffusion and epitaxial growth steps are complete, a new oxide layer 24 is formed, and s~ctions of the layer are again removed for deposition of metal to form ohmic contacts 36 tFig. 31 with the components formed in the assembly. In Fig. 3 is illustrated the completed IC.
~eferring again to Fig. l, a DC power supply ~not shown) external to the IC lO provides plus t+) and minus ~-) DC Volts t+V, -V) on lines 40,42 to the circuitry inside the IC. The light source 14 typically comprises a laser diode and is connected by signal lines 44 to known driver circuitry tnot shown) external to the IC. The driver circuitry, which forms no part of the present invention, provides the appropriate current for proper diode operation. Alternatively, the light source driver circuitry may, if desired, be fabricated on the IC. +V is also provided to a raference voltage generator 46, e.g., a zener diode, which generates a stable voltage, VREF, on a line 48 ~or use by other components on the IC.
VREF supplies a junction current ~ij) to forward bias the sensing diode 12. The junction current flows from VREF through a resistor 50 and the diode 12 to ground. The Yalue of the resistor 50 connected between -VREF and the diode is selected so that the junction ,~092/19014 PCT/US92/02972 ~" 2 ~ 9 current (ii) is greater than the sensing diode saturation current (Is).
A sensing voltage (V~) is the voltage across the sensing diode at the junction (node) 52 between the sensing diode and the resistor 50, and is a function of junction current (ij) and sensing diode temperature (T~, as given by:
Vs = (kT/q)(ln(ij/Is)) (Eq. l) where k is Boltzmann's constant and q is the charge of an electron.
Fig. 4 is a qraph of voltage, Vs, versus temperature, ~, for a GaAs diode having a lO micro-amp junction current. The relationship is approximately linear in the temperature range of 25OC to 300 c, and is given by:
T = 434.65~C - (444.42~C/volt)(Vs) (EqO 2) Thus, by knowing the voltage across the sensing diode, the temperature of the diode may be calculated.
Further, because the diode is fabricated on the substrate, the temperature of the diode represents the temperature of the substrate.
Referring again to Fig.-l, a non-inverting terminal of a first operational amplifier (op-amp) 56 is connected to the node 52 through a resistor 58. A
shunt resistor (Rs) 60 is connected between an inverting terminal of the op-amp 56 and ground. A
feedback resistor (Rf) 62 is connected between the inverting terminal and an output terminal o~ the op-amp. An offset resistor (Ro) 64 is connected - ~ -- . : . . . .. . . .
,.
- . . ., .. ~ . . .
.
.
~V0~2~9~ PCT/~S9~rO2~72 ~ a9~ a~ 1O ~
between the inverting terminal and VREF to cancel any nominal sensing diode offset voltage.
The sensing voltage (Vs) is applied at the non-inverting terminal. ~n output voltage (VO) generated at the output terminal is a function o~ Vs, Rf, Rs, Ro~ and VREF as given by:
Vo = VS*~l+R~(Rg~Ro)/~Rs*Ro)] - VREF(Rf/Ro) (Eq- 3) Thus, V0~ which is an amplified version of Vs~ is indicative of the tempe.rature o~ the substrate as sensed by the sensing diode. VO is supplied on a line 66 through a r~sistor 68 to an inverting terminal of a second op-amp 70 con~igured as an error amplifier.
Additional resistors 72,74 on the IC, along with an adjustable resistor 76 external to the IC, provide a voltage indicative of a constant desired IC
temperature. The second op-amp 70 compares the desired voltage (temperature) with the sensed voltaga, VO' (temperature) and provides a signal indicative of any difference therebetween on a line 78 to a third op amp 20 80. The second op-amp 70 has a capacitor 82 external to the IC connected across the op-amp output and inverting input, and connected in paxallel with an internal resistor 84. The external capacitor 82 serves as a filter capacitor to set the loop response.
The output of the third op-amp 80 is connected through a resistor 86 and diode 88 to a transistor 90.
In turn, the transistor 90 is connected to the heater resistor 16. Together, the third op-amp 80, the resistor 86, diode 88 and transistor 90 serve as a simple linear heater driver. In this exemplary embodiment of the present invention, the efficiency of .... - ~ :
. .
- - .~.- ~ ,, ~0 g2~1~14 ~ D 9 6 ' 1 ~3 P~US92~2?72 !"".
the heater driver is not a factor since the heater driver is fabricated on the same IC as the heater 16;
hence, it can be considered a part of the heater.
During operation, a bias current signal energizes the laser diode 14. The temperature of the laser changes as it is operated, thereby changing the wavelength of the light emitted by the laser. As described hereinbefore, the changing laser wavelength may have adverse consequences ~or high accuracy davices. The temperature o~ the substrate changes in response to changes in the laser temperature. The sensing diode 12 is responsive to these changes in laser temperature and the error amp 70 indicates the difference between actual and desired temperaturesO
The error amp commands the heater driver, which drives the heater 16 to heat the substrate lo until the sensed substrate temperature equals the desired constant substrate temperature. The response time of the sensing diode and heater to changes in substrate ~o temperature is significantly faster than the aforementioned prior art schemes since the laser, the sensing diode, and the heater are fabricated on the same substrate, thereby reducing the thermal resistance between the el~ments.
It is to be understood that the aforementioned circuitry fabricated on the IC is purely exemplary; any other circuitry may be used, if desired, for sensing the temperature of the substrate as provided for by the sensing diode, for comparing the sensed temperature with the desired temperature, and for driving the heater in response thereto.
Referring to Fig. 5, an alternative embodiment of the present invention is illustrated in which the - , ~ . - ........................ . . .
- - . . ........... ... . ~: . .: .... : - , . ~. - ...... ~.. ~ .. . .
: . , WO92/19014 PCT/~S~ 2~72 ~..,;.
~ 9 ~ 12 sensing diode 12, laser diode 14, and the heater re~istor 1~ are fabricated on the IC 10, while any controlling circuitry is external to the IC. As with Fig. 1, external laser control circuitry is not illustrated since this circuitry is well known and forms no part of the present invention.
current through the sensing diode is provided on a pair of signal lines 100,102 by a current source 104~
which is illustrated in detail in Fig. 7 and descr:ibed hereinafter with reference thereto. The sensed voltage across the sensing diode is ~ed on the lines 100,102 to a buffer amplifier 106, which may comprise one or more op-amps arranged in the well known instrumentation amplifier configuration. The buffer output voltage is indicative of the sensed substrate temperature. The buf~er output is fed on a line 108 to an analog to digital converter 110 (ADC3 which converts the analog buffer output voltage to a corresponding digital signal. Also fed to the ADC, as well as to the current source, is a stable reference voltage, V~EF, provided by, e.g., a zener diode 112 in a similar manner to that of Fig. 1.
The output of the ADC 110 is provided on a set of signal lines 114 (i.e., data bus) to a known microprocessor 116 (UPROC). The UPROC 116 converts the digital voltage signal into a corresponding temperature signal using a look-up table which m~y contain a graphical relationship between voltage and temperature similar to that of Fig. 4. The look-up table may comprise a plurality of memory or register locations within the UPROC or in external memory (not shown) for storing corresponding temperature signal informationO
~092~190~4 PCrJUS92/0297~
2 ~
Also input on a lin~ 118 to the UPROC is a signal indicative of a desired constant substrate temperature.
The signal may be generated from other circuitry (not shown), which may be responsive to other parameters in arriving at a desired substrate temperature. The UPROC
compares the desired and sensed substrate temperatures and provides a signal indicative of any difference therebetween on a line 120 to heater driver cirauitry 122. The signal to the heater driver 122 may be a pulse width modulated (PWM) signal to minimize wasted power in the heater driver~ The heater driver may comprise a simple transistor responsive to the PWM
signal for driving the heater with the pair of signal lines 123 accordingly so as to closely match desired and sensed substrate temperatures, thereby reducing temperature-induced laser wavelength variations.
Also included may be current control circuitry 124 for the current source 104. The circuitry 124 may comprise a known digital to analog converter 124 (DAC).
The DAC is responsive to a signal on a line 126 from the UPROC and provides a signal on a line 128 to the current source, as illustrated in greater detail in Fig. 7. VREF is also fed to the DAC.
Specifically, the UPROC may contain a modelling algorithm for the sensing diode 12. As a result, the UPROC may adjust, through the DAC, the current source output for proper operation of the sensing diode, depending on the particular diode used. or,- the UPROC
may adjust the current source output to compensate for unit to unit variations in sensins diodes.
Referring to Fig. 6, another alternative embodiment of the present invention is illustrated in which only the laser diode 14 and a heater resistor 16 ., - . - . . . . .-. , ~ .
- : ' .' . - ~. . :
'' ' . ' ': , .
WO9~/lgO14 ~965~ PCT/US9~0297~
are fabricatad on the IC 10, while any controlling circuitry is external to the IC. Howev2r, it is to be understood that, in this alternative embodiment, a portion or all of the controlling circuitry may be fabricated on the IC, if desired. The controlling circuitry is similar to that of Fig. 5 in that it comprises a similar current source 104, buffer 106/
refer~nce voltage generator 112, ADC 110, UPROC 1~6, and heater driver 122.
However, because there is no sensing diode 12 fabricated on the IC, the controlling circuitry must monitor the voltage across the laser as well as the current through it. A voltage indicative of the current generated by the current source is provided on `15 a line 130 to one input of a multiplexer 132 (mux).
The buffer voltage output on the line 108 is fed to a second input of the mux 132. The mux alternately chooses one of the two inputs to pass through to th2 mux output on a line 134. The mux output is fed to the ADC, which provides the digital value of the mux output to the UPROC.
Software inside the UPROC contains a well known detailed model of light source temperature versus light source current and voltage, similar to the graph of Fig. 4. From this model the UPROC calculates the temperature of the laser diode, and thus, the temperature of the substrate. The UPROC compares the calculated actual light source temperature with the desired temperature provided on the line 118 and provides a signal indicative of any difference - therebetween on the line 120 to the heater driver 122.
The heater driver then co~mands the heater with appropriate signals on the pair of lines 123 to heat ~, ~O9~J19014 PCT/US92~297~ 11 i ~"` " 2 ~ 3 .~
the substrate accordingly to match actual and desired substrata temperatures.
Tha current through the laser may be controlled by the UPROC as part of a separate control loop. The control loop may operate on a sensed laser parameter such as optical intensity or wavelength. The sensed parameter (sensor not shown) is input to the UPROC on a line 140. Software inside the UPROC calculates a commanded laser operating current in response thereto and provides a signal indicative thereof on the line 126 to a light source control circuit 124. The circuit may comprise a DAC 124, similar to that of Fig. 5, responsive to the commanded current on the line 126 in controlling the current supplied to the laser in the current source. VREF is also fed to the DAC.
In Fig. 7 is illustrated in more detail the current source 104 of both Figs. 5 and 6. A fixed resistor 150 and a variable resistor 152 are connected between VREF and ground and provide a voltage indicative of a desired laser operating current on a line 154 to a non-inverting input of an op-amp 156 The output of the op-amp is connected through a resistor 158 to a transistor 160. The collector of the transistor 160 is pulled up to +V through a resistor 162. The emitter of the transistor is connected by the line 100 to the anode of either the sensing diode 12 (Fig. 5~ or the laser diode l4 (Fig. 6). The cathode of either device 12,14 is connected by the line 102 to the inverting input of ~he op-amp 156, such input also being connected through a resistor 164 to ground.
For the mux 132 of Fig. 6 only, the non-inverting op-amp input is also connected to a non-inverting input of a second op-amp 166. The second op-amp 166 is .. . . . .
.-- : . :
W092/1gO~4 PCT/U~ 7~ 1 ?,~965~
configured as a voltage ~ollower, and its output is fed on the line 130 to the mux of Fig. 6. Further, the laser current control output on the ~ine 128 from the DAC 124 of Figs. 5 and 6 is fed through a resistor 168 to the non-inverting input of the first op-amp 1560 In operation, current source operat.ing current is indicated by the voltage at the non-inverting input of the first op-amp 156. This voltage is trimmed as necessary by the UPROC 116 through the DAC 124. The op-amp output is converted to a current through the transistor 160, the current being used to control either the sensing diode 12 of Fig. 5 or the laser diode 14 of Fig. 6.
Although the invention is illustrated with the temperature sensor 12 implemented as a diode fabricated on the IC, other temperature sensitive semiconductor devices may be fabricated thereon without departing from the spirit and scope of the present inventionO
zener diode, a semicondùctor resistor, and the base-emitter or base-collector junction of a transistor are examples of semiconductor devices having suitable temperature characteristics.
Also, it is to ~e understood that the GaAs laser diode 14 used as the semicondu~tor light source is 2~ exemplary; other light sources may be used; e.g., a light emitting diode (LED), an edge-~mitting diode (ELED)-, a super luminescent diode (SLD), or a distributed feedback (DFB) laser diode.
Further, the semiconductor resistor used as the heater 16 i~ exemplary; other heaters may be used:
e.g., a semiconductor diode or a zener diode. If fabricated other than as a semiconductor resistor, the heater driver circuitry must be changed from that ~09~19014 PCT/US92/02972 ~- 209~t~1~
illustrated herein so as to match the charact~ristics of the heater implementation.
The UPROC is described as converting the digital voltage signal into a temperature signal using a look-up table. However, other signal conversion methods could be used such as a subroutine which performs a calculation using a relationship which deflnes the curve of the light source voltage versus temperature characteristic. In addition, although the the IC is described aæ being fabricated using the epitaxial-diffused fabrication process, other integrated circuit fabrication tech~iques could be employed; e.g., crystal growth techniques and alloy or fused construction.
Although the invention bas been illustrated and described with respect to exemplary embodiments thereof, it should be understood by those skilled in the art that the foregoing and various other changes, omissions and additions may be ~ade therein and thereto, without departing from the spirit and scope of the invention.
I claim:
. ~ ............................ .
- :: - ~ , : - ,
.. .
..
. , , . - : .
, . .. . - . .
. - . - ~ : .
- . ~ , .
:' .~ ~ .' - ' WO92/19014 PCT/US92/02 ~
'~ ~963~9 6 Fig. 4 is a graph of the voltage versus temperature relationship for a GaAs diode fabricated on the IC of Fig~ 3;
Fig. 5 is a schematic block diagram of circuitry s fabricated on an IC in accordance with an alternative embodiment of the present invention;
Fig. 6 is a schematic block diagram of circuitry fabricated on an IC in accordance with another alternative embodiment of the present invention; and Fig. 7 is a schematic block diagram of a detailed portion of the circuitry of the alternative embodiments of Figs. 5 and 6.
Best Mode for Carrying Out the Invention In Fig. l is illustrated a schematic diagram of circuitry fabricated on a portion of semiconductor substrate material lO: more particularly, the material comprising a monolithic IC lO. The IC has fabricated thereon, in accordance with the present invention, a temperature sensitive semiconductor device 12, e.g., a Gallium Arsenide (GaAs) diode 12, a semiconductor light source 14, e.g., a GaAs laser diode l4, and a semiconductor heating device 16, e.g., a semiconductor resistor 16. Other well known electronic components, some of which are described hereinafter, are fabricated onto the substrate as well. The sensing and light source diodes, heater and other components may all be fabricated onto the IC substrate using known epitaxial-diffused IC fabrication processesO
Referring to Fig. 2(a), the IC is formed by first providing a thin layer of substrate material 20, e.g., GaAs, doped with a high concentration of n-type donor .
.. . . . . . .
- :,' - ' ' -: . . ~ . .
' ' ' : ' - ~` . ' " ' : ' .
l-~v092~9014 2 ~ 9 ~ ~ ~ PCT/USg~J0~97~
atoms (i.e., atoms havin~ excess free electrons), one side of the layer 20 being lapped and polished. Next, an epitaxial growth procPss is used to grow a second layer 22 on the substrate 20. The epitaxial layer 22 has a different type or concentration of impurity atoms, e.g., a lower concentration of n-type impurity atoms.
In the epitaxial growth process, the substrate is exposed to a high temperature gaseous environment; the gas containing the substrate crystal material having a different concentration or different type vf impurity material. The crystal material in the gas is deposited on the polished side of the substrate. An oxide layer 24 is then formed on the epitaxial 22 layer by exposing the IC to a high temperature oxygen or steam atmosphere.
Re~erring to Fig. 2(b), an etching and diffusion process is performed where sections 26 of the oxide layer 24 are removed. Next, isolation diffusion takes place by exposing the assembly to an atmosphere containing the same impurities as the substrate impurities. The time and temperature of exposure is controlled to allow the impurities to penetrate the epitaxial layer and reach the substrate 20, thereby forming isolation regions 28 which allow electrical isolation between different circuit components.
A new oxide layer 24 i5 then formed and sections 30 of the layer are removed (Fig 2(c)) to form the -circuit components 32 (e.g., the sensing and light source diodes 12,14 and heater resistor 16). Component formation is accomplished using the aforementioned isolation diffusion process with a variety of diffusion atoms, such as n-type donor atoms or p-type acceptor .-. . . . ..
- : . . : ~ . .
. ~
-. , , .. : ., . , .. - ,: :,- .
- ~ . . -- . - ~ :
WOg2/19014 PCT~US92~0~97~
~,~96~3~ 8 atoms (i.e., atoms having excess free holes), to form the desired circuit components.
In addition to oxide layer formation and subsequent removal for i-cola~ion di~fusion, sections of oxide layer may be removed for formation of additional epitaxial growth layers 34, as illustrated in Fig.
2(d).
once the diffusion and epitaxial growth steps are complete, a new oxide layer 24 is formed, and s~ctions of the layer are again removed for deposition of metal to form ohmic contacts 36 tFig. 31 with the components formed in the assembly. In Fig. 3 is illustrated the completed IC.
~eferring again to Fig. l, a DC power supply ~not shown) external to the IC lO provides plus t+) and minus ~-) DC Volts t+V, -V) on lines 40,42 to the circuitry inside the IC. The light source 14 typically comprises a laser diode and is connected by signal lines 44 to known driver circuitry tnot shown) external to the IC. The driver circuitry, which forms no part of the present invention, provides the appropriate current for proper diode operation. Alternatively, the light source driver circuitry may, if desired, be fabricated on the IC. +V is also provided to a raference voltage generator 46, e.g., a zener diode, which generates a stable voltage, VREF, on a line 48 ~or use by other components on the IC.
VREF supplies a junction current ~ij) to forward bias the sensing diode 12. The junction current flows from VREF through a resistor 50 and the diode 12 to ground. The Yalue of the resistor 50 connected between -VREF and the diode is selected so that the junction ,~092/19014 PCT/US92/02972 ~" 2 ~ 9 current (ii) is greater than the sensing diode saturation current (Is).
A sensing voltage (V~) is the voltage across the sensing diode at the junction (node) 52 between the sensing diode and the resistor 50, and is a function of junction current (ij) and sensing diode temperature (T~, as given by:
Vs = (kT/q)(ln(ij/Is)) (Eq. l) where k is Boltzmann's constant and q is the charge of an electron.
Fig. 4 is a qraph of voltage, Vs, versus temperature, ~, for a GaAs diode having a lO micro-amp junction current. The relationship is approximately linear in the temperature range of 25OC to 300 c, and is given by:
T = 434.65~C - (444.42~C/volt)(Vs) (EqO 2) Thus, by knowing the voltage across the sensing diode, the temperature of the diode may be calculated.
Further, because the diode is fabricated on the substrate, the temperature of the diode represents the temperature of the substrate.
Referring again to Fig.-l, a non-inverting terminal of a first operational amplifier (op-amp) 56 is connected to the node 52 through a resistor 58. A
shunt resistor (Rs) 60 is connected between an inverting terminal of the op-amp 56 and ground. A
feedback resistor (Rf) 62 is connected between the inverting terminal and an output terminal o~ the op-amp. An offset resistor (Ro) 64 is connected - ~ -- . : . . . .. . . .
,.
- . . ., .. ~ . . .
.
.
~V0~2~9~ PCT/~S9~rO2~72 ~ a9~ a~ 1O ~
between the inverting terminal and VREF to cancel any nominal sensing diode offset voltage.
The sensing voltage (Vs) is applied at the non-inverting terminal. ~n output voltage (VO) generated at the output terminal is a function o~ Vs, Rf, Rs, Ro~ and VREF as given by:
Vo = VS*~l+R~(Rg~Ro)/~Rs*Ro)] - VREF(Rf/Ro) (Eq- 3) Thus, V0~ which is an amplified version of Vs~ is indicative of the tempe.rature o~ the substrate as sensed by the sensing diode. VO is supplied on a line 66 through a r~sistor 68 to an inverting terminal of a second op-amp 70 con~igured as an error amplifier.
Additional resistors 72,74 on the IC, along with an adjustable resistor 76 external to the IC, provide a voltage indicative of a constant desired IC
temperature. The second op-amp 70 compares the desired voltage (temperature) with the sensed voltaga, VO' (temperature) and provides a signal indicative of any difference therebetween on a line 78 to a third op amp 20 80. The second op-amp 70 has a capacitor 82 external to the IC connected across the op-amp output and inverting input, and connected in paxallel with an internal resistor 84. The external capacitor 82 serves as a filter capacitor to set the loop response.
The output of the third op-amp 80 is connected through a resistor 86 and diode 88 to a transistor 90.
In turn, the transistor 90 is connected to the heater resistor 16. Together, the third op-amp 80, the resistor 86, diode 88 and transistor 90 serve as a simple linear heater driver. In this exemplary embodiment of the present invention, the efficiency of .... - ~ :
. .
- - .~.- ~ ,, ~0 g2~1~14 ~ D 9 6 ' 1 ~3 P~US92~2?72 !"".
the heater driver is not a factor since the heater driver is fabricated on the same IC as the heater 16;
hence, it can be considered a part of the heater.
During operation, a bias current signal energizes the laser diode 14. The temperature of the laser changes as it is operated, thereby changing the wavelength of the light emitted by the laser. As described hereinbefore, the changing laser wavelength may have adverse consequences ~or high accuracy davices. The temperature o~ the substrate changes in response to changes in the laser temperature. The sensing diode 12 is responsive to these changes in laser temperature and the error amp 70 indicates the difference between actual and desired temperaturesO
The error amp commands the heater driver, which drives the heater 16 to heat the substrate lo until the sensed substrate temperature equals the desired constant substrate temperature. The response time of the sensing diode and heater to changes in substrate ~o temperature is significantly faster than the aforementioned prior art schemes since the laser, the sensing diode, and the heater are fabricated on the same substrate, thereby reducing the thermal resistance between the el~ments.
It is to be understood that the aforementioned circuitry fabricated on the IC is purely exemplary; any other circuitry may be used, if desired, for sensing the temperature of the substrate as provided for by the sensing diode, for comparing the sensed temperature with the desired temperature, and for driving the heater in response thereto.
Referring to Fig. 5, an alternative embodiment of the present invention is illustrated in which the - , ~ . - ........................ . . .
- - . . ........... ... . ~: . .: .... : - , . ~. - ...... ~.. ~ .. . .
: . , WO92/19014 PCT/~S~ 2~72 ~..,;.
~ 9 ~ 12 sensing diode 12, laser diode 14, and the heater re~istor 1~ are fabricated on the IC 10, while any controlling circuitry is external to the IC. As with Fig. 1, external laser control circuitry is not illustrated since this circuitry is well known and forms no part of the present invention.
current through the sensing diode is provided on a pair of signal lines 100,102 by a current source 104~
which is illustrated in detail in Fig. 7 and descr:ibed hereinafter with reference thereto. The sensed voltage across the sensing diode is ~ed on the lines 100,102 to a buffer amplifier 106, which may comprise one or more op-amps arranged in the well known instrumentation amplifier configuration. The buffer output voltage is indicative of the sensed substrate temperature. The buf~er output is fed on a line 108 to an analog to digital converter 110 (ADC3 which converts the analog buffer output voltage to a corresponding digital signal. Also fed to the ADC, as well as to the current source, is a stable reference voltage, V~EF, provided by, e.g., a zener diode 112 in a similar manner to that of Fig. 1.
The output of the ADC 110 is provided on a set of signal lines 114 (i.e., data bus) to a known microprocessor 116 (UPROC). The UPROC 116 converts the digital voltage signal into a corresponding temperature signal using a look-up table which m~y contain a graphical relationship between voltage and temperature similar to that of Fig. 4. The look-up table may comprise a plurality of memory or register locations within the UPROC or in external memory (not shown) for storing corresponding temperature signal informationO
~092~190~4 PCrJUS92/0297~
2 ~
Also input on a lin~ 118 to the UPROC is a signal indicative of a desired constant substrate temperature.
The signal may be generated from other circuitry (not shown), which may be responsive to other parameters in arriving at a desired substrate temperature. The UPROC
compares the desired and sensed substrate temperatures and provides a signal indicative of any difference therebetween on a line 120 to heater driver cirauitry 122. The signal to the heater driver 122 may be a pulse width modulated (PWM) signal to minimize wasted power in the heater driver~ The heater driver may comprise a simple transistor responsive to the PWM
signal for driving the heater with the pair of signal lines 123 accordingly so as to closely match desired and sensed substrate temperatures, thereby reducing temperature-induced laser wavelength variations.
Also included may be current control circuitry 124 for the current source 104. The circuitry 124 may comprise a known digital to analog converter 124 (DAC).
The DAC is responsive to a signal on a line 126 from the UPROC and provides a signal on a line 128 to the current source, as illustrated in greater detail in Fig. 7. VREF is also fed to the DAC.
Specifically, the UPROC may contain a modelling algorithm for the sensing diode 12. As a result, the UPROC may adjust, through the DAC, the current source output for proper operation of the sensing diode, depending on the particular diode used. or,- the UPROC
may adjust the current source output to compensate for unit to unit variations in sensins diodes.
Referring to Fig. 6, another alternative embodiment of the present invention is illustrated in which only the laser diode 14 and a heater resistor 16 ., - . - . . . . .-. , ~ .
- : ' .' . - ~. . :
'' ' . ' ': , .
WO9~/lgO14 ~965~ PCT/US9~0297~
are fabricatad on the IC 10, while any controlling circuitry is external to the IC. Howev2r, it is to be understood that, in this alternative embodiment, a portion or all of the controlling circuitry may be fabricated on the IC, if desired. The controlling circuitry is similar to that of Fig. 5 in that it comprises a similar current source 104, buffer 106/
refer~nce voltage generator 112, ADC 110, UPROC 1~6, and heater driver 122.
However, because there is no sensing diode 12 fabricated on the IC, the controlling circuitry must monitor the voltage across the laser as well as the current through it. A voltage indicative of the current generated by the current source is provided on `15 a line 130 to one input of a multiplexer 132 (mux).
The buffer voltage output on the line 108 is fed to a second input of the mux 132. The mux alternately chooses one of the two inputs to pass through to th2 mux output on a line 134. The mux output is fed to the ADC, which provides the digital value of the mux output to the UPROC.
Software inside the UPROC contains a well known detailed model of light source temperature versus light source current and voltage, similar to the graph of Fig. 4. From this model the UPROC calculates the temperature of the laser diode, and thus, the temperature of the substrate. The UPROC compares the calculated actual light source temperature with the desired temperature provided on the line 118 and provides a signal indicative of any difference - therebetween on the line 120 to the heater driver 122.
The heater driver then co~mands the heater with appropriate signals on the pair of lines 123 to heat ~, ~O9~J19014 PCT/US92~297~ 11 i ~"` " 2 ~ 3 .~
the substrate accordingly to match actual and desired substrata temperatures.
Tha current through the laser may be controlled by the UPROC as part of a separate control loop. The control loop may operate on a sensed laser parameter such as optical intensity or wavelength. The sensed parameter (sensor not shown) is input to the UPROC on a line 140. Software inside the UPROC calculates a commanded laser operating current in response thereto and provides a signal indicative thereof on the line 126 to a light source control circuit 124. The circuit may comprise a DAC 124, similar to that of Fig. 5, responsive to the commanded current on the line 126 in controlling the current supplied to the laser in the current source. VREF is also fed to the DAC.
In Fig. 7 is illustrated in more detail the current source 104 of both Figs. 5 and 6. A fixed resistor 150 and a variable resistor 152 are connected between VREF and ground and provide a voltage indicative of a desired laser operating current on a line 154 to a non-inverting input of an op-amp 156 The output of the op-amp is connected through a resistor 158 to a transistor 160. The collector of the transistor 160 is pulled up to +V through a resistor 162. The emitter of the transistor is connected by the line 100 to the anode of either the sensing diode 12 (Fig. 5~ or the laser diode l4 (Fig. 6). The cathode of either device 12,14 is connected by the line 102 to the inverting input of ~he op-amp 156, such input also being connected through a resistor 164 to ground.
For the mux 132 of Fig. 6 only, the non-inverting op-amp input is also connected to a non-inverting input of a second op-amp 166. The second op-amp 166 is .. . . . .
.-- : . :
W092/1gO~4 PCT/U~ 7~ 1 ?,~965~
configured as a voltage ~ollower, and its output is fed on the line 130 to the mux of Fig. 6. Further, the laser current control output on the ~ine 128 from the DAC 124 of Figs. 5 and 6 is fed through a resistor 168 to the non-inverting input of the first op-amp 1560 In operation, current source operat.ing current is indicated by the voltage at the non-inverting input of the first op-amp 156. This voltage is trimmed as necessary by the UPROC 116 through the DAC 124. The op-amp output is converted to a current through the transistor 160, the current being used to control either the sensing diode 12 of Fig. 5 or the laser diode 14 of Fig. 6.
Although the invention is illustrated with the temperature sensor 12 implemented as a diode fabricated on the IC, other temperature sensitive semiconductor devices may be fabricated thereon without departing from the spirit and scope of the present inventionO
zener diode, a semicondùctor resistor, and the base-emitter or base-collector junction of a transistor are examples of semiconductor devices having suitable temperature characteristics.
Also, it is to ~e understood that the GaAs laser diode 14 used as the semicondu~tor light source is 2~ exemplary; other light sources may be used; e.g., a light emitting diode (LED), an edge-~mitting diode (ELED)-, a super luminescent diode (SLD), or a distributed feedback (DFB) laser diode.
Further, the semiconductor resistor used as the heater 16 i~ exemplary; other heaters may be used:
e.g., a semiconductor diode or a zener diode. If fabricated other than as a semiconductor resistor, the heater driver circuitry must be changed from that ~09~19014 PCT/US92/02972 ~- 209~t~1~
illustrated herein so as to match the charact~ristics of the heater implementation.
The UPROC is described as converting the digital voltage signal into a temperature signal using a look-up table. However, other signal conversion methods could be used such as a subroutine which performs a calculation using a relationship which deflnes the curve of the light source voltage versus temperature characteristic. In addition, although the the IC is described aæ being fabricated using the epitaxial-diffused fabrication process, other integrated circuit fabrication tech~iques could be employed; e.g., crystal growth techniques and alloy or fused construction.
Although the invention bas been illustrated and described with respect to exemplary embodiments thereof, it should be understood by those skilled in the art that the foregoing and various other changes, omissions and additions may be ~ade therein and thereto, without departing from the spirit and scope of the invention.
I claim:
. ~ ............................ .
- :: - ~ , : - ,
Claims (31)
1. Temperature control apparatus for a fiber optic gyroscope which utilizes a coherent light source, the uncompensated output of the gyroscope varying with the temperature of the light source, comprising:
a substrate of semiconductor material with the light source, fabricated in said substrate, the temperature of said light source varying as said light source is operated, the temperature of said substrate varying as the temperature of said light source varies;
sensing means, fabricated in said substrate;
heating means, fabricated in said substrate;
current means, for providing an electrical current through said sensing means, said sensing means responsive to said electrical current for providing a voltage signal indicative of a voltage across said sensing means said voltage signal varying as a function of the temperature of said substrate;
control means, responsive to said voltage signal, for comparing said voltage signal to a signal indicative of a desired temperature of said substrate and for providing an error signal indicative of any difference therebetween; and heater driver means, for varying the current passing through said heating means in an amount proportional to the value of said error signal, said heating means responsive to said varying amount of current therethrough for heating said substrate accordingly to compensate the gyroscope output in accordance with temperature.
a substrate of semiconductor material with the light source, fabricated in said substrate, the temperature of said light source varying as said light source is operated, the temperature of said substrate varying as the temperature of said light source varies;
sensing means, fabricated in said substrate;
heating means, fabricated in said substrate;
current means, for providing an electrical current through said sensing means, said sensing means responsive to said electrical current for providing a voltage signal indicative of a voltage across said sensing means said voltage signal varying as a function of the temperature of said substrate;
control means, responsive to said voltage signal, for comparing said voltage signal to a signal indicative of a desired temperature of said substrate and for providing an error signal indicative of any difference therebetween; and heater driver means, for varying the current passing through said heating means in an amount proportional to the value of said error signal, said heating means responsive to said varying amount of current therethrough for heating said substrate accordingly to compensate the gyroscope output in accordance with temperature.
2. The apparatus of claim 1, wherein said heater driver means comprises a linearcircuit.
3. The apparatus of claim 1, wherein said heater driver means comprises a pulse width modulator circuit.
4. The apparatus of claim 1, wherein said control means further comprises means for varying said electrical current provided for said sensing means by said current means.
5. The apparatus of claim 1, wherein said heating means comprises a semiconductor resistor.
6. The apparatus of claim 1, wherein said heating means comprises a semiconductor diode.
7. The apparatus of claim 1, wherein said heating means comprises a zener diode.
8. The apparatus of claim 1, wherein said sensing means comprises a semiconductor diode.
9. The apparatus of claim 1, wherein said sensing means comprises a zener diode.
10. The apparatus of claim 1, wherein said sensing means comprises the base emmitter-juction of a transistor.
11. The apparatus of claim 1, wherein said sensing means comprises the base-collector junction of a transistor.
12. The apparatus of claim 1, wherein said sensing means comprises a semiconductor resistor.
13. The apparatus of claim 1, wherein said light source comprises a laser diode.
14. The apparatus of claim 1, wherein said light source comprises a light emitting diode.
15. The apparatus of claim 1, wherein said light source comprises an edge-emitting light emitting diode.
16. The apparatus of claim 1, wherein said light source comprises a super luminescent diode.
17. The apparatus of claim 1, wherein said light source comprises a distributed feedback laser diode.
18. The apparatus of claim 1, wherein one or more of said current means, said control means, and said heater driver means are fabricated in said substrate.
19. Temperature control apparatus for a fiber optic gyroscope which utilizes a coherent light source, the uncompensated output of the gyroscope varying with the temperature of the light source, comprising:
a substrate of semiconductor material with the light source, fabricated in said substrate, the temperature of said light source varying as said light source is operated, the temperature of said substrate varying as the temperature of said light source varies;
heating means, fabricated in said substrate;
current means, for providing an electrical current through said light source, said light source responsive to said electrical current for providing a voltage signal indicative of a voltage across said light source, said voltage signal varying as a function of the temperature of said substrate;
control means, responsive to said voltage signal and to the amount of said electrical current provided for by said current means for calculating therefrom a signal indicative of the actual substrate temperature and for comparing scud actual temperature signal to a signal indicative of a desired temperature of said substrate and for providing an error signal indicative of any difference therebetween; and heater driver means, for varying an amount of current passing through said heating means in an amount proportional to the value of said error signal, said heating means responsive to said varying amount of current therethrough for heating said substrate accordingly to compensate the gyroscope output in accordance with temperature.
a substrate of semiconductor material with the light source, fabricated in said substrate, the temperature of said light source varying as said light source is operated, the temperature of said substrate varying as the temperature of said light source varies;
heating means, fabricated in said substrate;
current means, for providing an electrical current through said light source, said light source responsive to said electrical current for providing a voltage signal indicative of a voltage across said light source, said voltage signal varying as a function of the temperature of said substrate;
control means, responsive to said voltage signal and to the amount of said electrical current provided for by said current means for calculating therefrom a signal indicative of the actual substrate temperature and for comparing scud actual temperature signal to a signal indicative of a desired temperature of said substrate and for providing an error signal indicative of any difference therebetween; and heater driver means, for varying an amount of current passing through said heating means in an amount proportional to the value of said error signal, said heating means responsive to said varying amount of current therethrough for heating said substrate accordingly to compensate the gyroscope output in accordance with temperature.
20. The apparatus of claim 19, wherein said heater driver means comprises a linear circuit.
21. The apparatus of claim 19, wherein said heater driver means comprises a pulse width modulator circuit.
22. The apparatus of claim 19, wherein said heating means comprises a semiconductor resistor.
23. The apparatus of claim 19, wherein said heating means comprises a semiconductor diode.
24. The apparatus of claim 19, wherein said heating means comprises a zener diode.
25. The apparatus of claim 19, wherein said light source comprises a laser diode.
26. The apparatus of claim 19, wherein said light source comprises a light emitting diode.
27. The apparatus of claim 19, wherein said light source comprises an edge-emmitting light emitting diode.
28. The apparatus of claim 19, wherein said light source comprises a super luminescent diode.
29. The apparatus of claim 19, wherein said light source comprises a distributedfeedback laser diode.
30. The apparatus of claim 19, wherein said control means further comprises means for varying said electrical current provided for said light source by saidcurrent means.
31. The apparatus of claim 19, wherein one of more of said current means, said control means, and said heater driver means are fabricated in said substrate.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US68526991A | 1991-04-15 | 1991-04-15 | |
| US07/685,269 | 1991-04-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2096519A1 true CA2096519A1 (en) | 1992-10-16 |
Family
ID=24751466
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA 2096519 Abandoned CA2096519A1 (en) | 1991-04-15 | 1992-04-13 | Semiconductor light source temperature control |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0581860A1 (en) |
| CA (1) | CA2096519A1 (en) |
| MX (1) | MX9201784A (en) |
| WO (1) | WO1992019014A1 (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4434266B4 (en) * | 1994-09-24 | 2005-05-25 | Byk Gardner Gmbh | Method for taking into account the temperature dependence of optoelectronic diodes |
| DE19714659A1 (en) * | 1997-04-09 | 1998-10-15 | Siemens Ag | Opto-electronic component insensitive to local temperature variations |
| US5955793A (en) * | 1998-02-11 | 1999-09-21 | Therm-O-Disc, Incorporated | High sensitivity diode temperature sensor with adjustable current source |
| GB2369437A (en) * | 2000-11-28 | 2002-05-29 | Graviner Ltd Kidde | An LED based temperature sensor |
| EP1648057A1 (en) * | 2004-10-13 | 2006-04-19 | Harman Becker Automotive Systems GmbH | Semiconductor laser device |
| US9429426B2 (en) | 2014-01-22 | 2016-08-30 | Northrop Grumman Systems Corporation | Adaptive inertial measurement system and method |
| US11764542B2 (en) * | 2017-12-15 | 2023-09-19 | Horiba, Ltd. | Semiconductor laser device, and method and program for driving the same |
| US11536899B2 (en) | 2020-06-30 | 2022-12-27 | Openlight Photonics, Inc. | Integrated bandgap temperature sensor |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3395265A (en) * | 1965-07-26 | 1968-07-30 | Teledyne Inc | Temperature controlled microcircuit |
| US3973852A (en) * | 1974-08-30 | 1976-08-10 | The Dow Chemical Company | Method and apparatus for measuring particulate concentration in the atmosphere |
| JPS5649559A (en) * | 1979-09-29 | 1981-05-06 | Nec Corp | Semiconductor integrated circuit device |
| JPS57188894A (en) * | 1981-05-18 | 1982-11-19 | Hitachi Ltd | Semiconductor laser device |
| JPS61265885A (en) * | 1985-05-20 | 1986-11-25 | Nec Corp | Semiconductor laser and drive thereof |
| JPS6222494A (en) * | 1985-07-22 | 1987-01-30 | Yokogawa Electric Corp | Stabilizing device for semiconductor laser |
| EP0238484A1 (en) * | 1985-09-24 | 1987-09-30 | Bell Communications Research, Inc. | Temperature stabilization of injection lasers |
| US4808009A (en) * | 1986-06-05 | 1989-02-28 | Rosemount, Inc. | Integrated semiconductor resistance temperature sensor and resistive heater |
| JPS63239887A (en) * | 1987-03-27 | 1988-10-05 | Hitachi Ltd | Semiconductor laser |
| JP2725012B2 (en) * | 1988-03-04 | 1998-03-09 | 富士通株式会社 | Semiconductor light emitting device |
| GB2224374A (en) * | 1988-08-24 | 1990-05-02 | Plessey Co Plc | Temperature control of light-emitting devices |
| US5024535A (en) * | 1989-12-20 | 1991-06-18 | United Technologies Corporation | Semiconductor light source temperature measurement |
-
1992
- 1992-04-13 EP EP19920911184 patent/EP0581860A1/en not_active Withdrawn
- 1992-04-13 WO PCT/US1992/002972 patent/WO1992019014A1/en not_active Application Discontinuation
- 1992-04-13 CA CA 2096519 patent/CA2096519A1/en not_active Abandoned
- 1992-04-15 MX MX9201784A patent/MX9201784A/en not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| MX9201784A (en) | 1992-10-01 |
| WO1992019014A1 (en) | 1992-10-29 |
| EP0581860A1 (en) | 1994-02-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5024535A (en) | Semiconductor light source temperature measurement | |
| US6359918B1 (en) | Light source control device | |
| US6082115A (en) | Temperature regulator circuit and precision voltage reference for integrated circuit | |
| US6590372B1 (en) | Method and integrated circuit for bandgap trimming | |
| US7060970B2 (en) | Temperature compensating device for APD optical receiver | |
| US4683573A (en) | Temperature stabilization of injection lasers | |
| US10648870B2 (en) | Temperature sensor and calibration method thereof having high accuracy | |
| GB2224374A (en) | Temperature control of light-emitting devices | |
| US6635859B2 (en) | Method and apparatus for light to frequency conversion | |
| CA2096519A1 (en) | Semiconductor light source temperature control | |
| US8866058B2 (en) | Optical transceiver and method of operation thereof | |
| JPH11121694A (en) | Reference voltage generating circuit and method for adjusting it | |
| US20070127530A1 (en) | Laser control | |
| US8994356B2 (en) | Method for adjusting a reference voltage based on a band-gap circuit | |
| US6556155B1 (en) | Method and integrated circuit for temperature coefficient compensation | |
| JPS6126240B2 (en) | ||
| JPH0348477A (en) | Semiconductor laser device | |
| US4090071A (en) | Photometric instrument with thermoelectric control of a photovoltaic semiconductor detector | |
| JPH06283797A (en) | Method for stabilizing semiconductor laser wavelength and wavelength-stabilized beam source | |
| US3461380A (en) | Thermocouple reference junction compensating circuits | |
| EP1036353B1 (en) | Improvements in zener diode reference voltage standards | |
| JPH07505256A (en) | Semiconductor light source temperature control | |
| JP2004140509A (en) | Optical transmitter | |
| Zhang et al. | A low-power CMOS smart temperature sensor from 60K to 200K | |
| JP3366130B2 (en) | Semiconductor laser control method and device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FZDE | Dead |