MX2024007699A - Material cristalino a/m/x, dispositivo fotovoltaico y metodos de preparacion de los mismos. - Google Patents

Material cristalino a/m/x, dispositivo fotovoltaico y metodos de preparacion de los mismos.

Info

Publication number
MX2024007699A
MX2024007699A MX2024007699A MX2024007699A MX2024007699A MX 2024007699 A MX2024007699 A MX 2024007699A MX 2024007699 A MX2024007699 A MX 2024007699A MX 2024007699 A MX2024007699 A MX 2024007699A MX 2024007699 A MX2024007699 A MX 2024007699A
Authority
MX
Mexico
Prior art keywords
crystal grains
crystal
photoactive
material layer
backlight
Prior art date
Application number
MX2024007699A
Other languages
English (en)
Inventor
Yandong Wang
Shuojian Su
Zhaohui Liu
Yanfen Wang
Yongsheng Guo
Guodong Chen
Chuying Ouyang
Original Assignee
Contemporary Amperex Tech Hong Kong Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Contemporary Amperex Tech Hong Kong Limited filed Critical Contemporary Amperex Tech Hong Kong Limited
Publication of MX2024007699A publication Critical patent/MX2024007699A/es

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G21/00—Compounds of lead
    • C01G21/006—Compounds containing lead, with or without oxygen or hydrogen, and containing two or more other elements
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/66—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing germanium, tin or lead
    • C09K11/664—Halogenides
    • H01L31/022425—
    • H01L31/032—
    • H01L31/03529—
    • H01L31/0368—
    • H01L31/077—
    • H01L31/18—
    • H01L31/1864—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/84—Layers having high charge carrier mobility
    • H10K30/85—Layers having high electron mobility, e.g. electron-transporting layers or hole-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/84—Layers having high charge carrier mobility
    • H10K30/86—Layers having high hole mobility, e.g. hole-transporting layers or electron-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/30—Three-dimensional structures
    • C01P2002/34—Three-dimensional structures perovskite-type (ABO3)
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

La presente solicitud proporciona un material cristalino A/M/X, un dispositivo fotovoltaico y métodos de preparación de los mismos. El dispositivo fotovoltaico incluye una capa (103) de material cristalino fotoactivo. La capa (103) de material cristalino fotoactivo incluye un cristal de penetración (313), donde el cristal de penetración (313) es un cristal que penetra a través de la capa (103) de material cristalino fotoactivo, y un porcentaje p de una cantidad de cristales de penetración (313) en una cantidad total de cristales de la capa (103) de material cristalino fotoactivo es = 80 %. La capa (103) de material cristalino fotoactivo incluye un lado de retroiluminación (113) y un cristal de retroiluminación (31, 32, 33), donde el cristal de retroiluminación (31, 32, 33) es un cristal expuesto al lado de retroiluminación (113) y tiene una cara de cristal de retroiluminación expuesta al lado de retroiluminación (113). Al menos una región del lado de retroiluminación (113) tiene un índice de planitud promedio Rprom que es = 75.
MX2024007699A 2021-12-23 2021-12-23 Material cristalino a/m/x, dispositivo fotovoltaico y metodos de preparacion de los mismos. MX2024007699A (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2021/140788 WO2023115449A1 (zh) 2021-12-23 2021-12-23 A/m/x晶体材料、光伏器件及其制备方法

Publications (1)

Publication Number Publication Date
MX2024007699A true MX2024007699A (es) 2024-07-01

Family

ID=86901132

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2024007699A MX2024007699A (es) 2021-12-23 2021-12-23 Material cristalino a/m/x, dispositivo fotovoltaico y metodos de preparacion de los mismos.

Country Status (8)

Country Link
US (1) US20230299219A1 (es)
EP (1) EP4236651A4 (es)
KR (1) KR20240114748A (es)
CN (1) CN116998239A (es)
AU (1) AU2021479832A1 (es)
IL (1) IL313796A (es)
MX (1) MX2024007699A (es)
WO (1) WO2023115449A1 (es)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001023899A (ja) * 1999-07-13 2001-01-26 Hitachi Ltd 半導体薄膜とその半導体膜を用いた液晶表示装置及びその製造方法
EP3328961B1 (en) * 2015-07-31 2019-04-03 Avantama AG Luminescent crystals and manufacturing thereof
SE540184C2 (en) * 2016-07-29 2018-04-24 Exeger Operations Ab A light absorbing layer and a photovoltaic device including a light absorbing layer
CN108305937A (zh) * 2017-01-11 2018-07-20 南京工业大学 一种三维钙钛矿薄膜纳米尺度晶粒的调控方法及其应用和器件
GB201819380D0 (en) * 2018-11-28 2019-01-09 Univ Oxford Innovation Ltd Long-term stable optoelectronic device
US11920042B2 (en) * 2019-01-14 2024-03-05 The University Of North Carolina At Chapel Hill Bilateral amines for defect passivation and surface protection in perovskite solar cells
WO2020147939A1 (en) * 2019-01-15 2020-07-23 Toyota Motor Europe Ink formulation for inkjet printing of perovskite active layers

Also Published As

Publication number Publication date
US20230299219A1 (en) 2023-09-21
EP4236651A1 (en) 2023-08-30
EP4236651A4 (en) 2023-12-13
IL313796A (en) 2024-08-01
AU2021479832A1 (en) 2024-07-11
CN116998239A (zh) 2023-11-03
KR20240114748A (ko) 2024-07-24
WO2023115449A1 (zh) 2023-06-29

Similar Documents

Publication Publication Date Title
Lin et al. Comparison of AZO, GZO, and AGZO thin films TCOs applied for a-Si solar cells
Merino et al. Structural characterization of CuIn2Se3. 5, CuIn3Se5 and CuIn5Se8 compounds
WO2007092293A3 (en) Method of forming copper indium gallium containing precursors and semiconductor compound layers
BR112022018384A2 (pt) Chapas de aço elétrico não orientado e laminada a frio, núcleo, e, métodos para fabricação de uma chapa de aço elétrico não orientado e de uma chapa de aço laminada a frio
EP2175054A3 (en) Substrate for growing wurtzite type crystal and method for manufacturing the same and semiconductor device
Lalitha et al. Influence of CdCl2 treatment on structural and optical properties of vacuum evaporated CdTe thin films
Shin et al. Control of the preferred orientation of Cu (In, Ga) Se2 thin film by the surface modification of Mo film
TW200616190A (en) The fabrication method of the wafer and the structure thereof
Liu et al. Fracture strength of silicon wafers sawn by fixed diamond wire saw
Pang et al. Substrate-tilt angle effect on structural and optical properties of sputtered ZnO film
EP1928012A3 (en) Semiconductor device and method of its manufacture
MX2024007699A (es) Material cristalino a/m/x, dispositivo fotovoltaico y metodos de preparacion de los mismos.
TW200519460A (en) Liquid crystal display device and fabrication method therefor
WO2003048411A1 (en) Method for forming thin film, substrate having transparent electroconductive film and photoelectric conversion device using the substrate
TWI514600B (zh) A transparent conductive film laminate, a method for manufacturing the same, and a thin film solar cell and a method for manufacturing the same
EP2804221A1 (en) Cigs-compound solar cell
Yu et al. Study on defects in hydrothermal-grown KBe2BO3F2 crystals
Ishizuka et al. Monolithically integrated flexible Cu (In, Ga) Se2 solar cell submodules
Huang et al. Ni/FTO bilayer thin films with high photoelectric properties optimized by magnetic-field-assisted laser annealing
TW200633266A (en) Gallium nitride-based semiconductor stacked structure, method for fabrication thereof, gallium nitride-based semiconductor device and lamp using the device
Mo et al. Characterization of low resistivity Ga-doped ZnO thin films on Si substrates prepared by pulsed laser deposition
TW200706681A (en) Sputtering target and process for producing si oxide film therewith
EP2696371A2 (en) Solar cell and manufacturing method thereof
DE102014209950A1 (de) Sputter-Target auf der Basis von ZnO und photovoltaische Zelle, die eine Passivierungsschicht aufweist, die unter Verwendung des besagten Sputter-Targets abgeschieden wird
CN208157421U (zh) 一种提升perc电池效率和良率的背面膜层结构