MX2017012530A - Memristor programable de forma espectral. - Google Patents
Memristor programable de forma espectral.Info
- Publication number
- MX2017012530A MX2017012530A MX2017012530A MX2017012530A MX2017012530A MX 2017012530 A MX2017012530 A MX 2017012530A MX 2017012530 A MX2017012530 A MX 2017012530A MX 2017012530 A MX2017012530 A MX 2017012530A MX 2017012530 A MX2017012530 A MX 2017012530A
- Authority
- MX
- Mexico
- Prior art keywords
- memristor
- spectral properties
- spectrally programmable
- memristor element
- spectrally
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/011—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour in optical waveguides, not otherwise provided for in this subclass
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0121—Operation of devices; Circuit arrangements, not otherwise provided for in this subclass
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
- G02F1/0356—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure controlled by a high-frequency electromagnetic wave component in an electric waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/09—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on magneto-optical elements, e.g. exhibiting Faraday effect
- G02F1/091—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on magneto-optical elements, e.g. exhibiting Faraday effect based on magneto-absorption or magneto-reflection
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F3/00—Optical logic elements; Optical bistable devices
- G02F3/02—Optical bistable devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/10—Materials and properties semiconductor
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Electromagnetism (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Micromachines (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Led Devices (AREA)
- Optical Integrated Circuits (AREA)
Abstract
Se utiliza un elemento de memristor para crear un dispositivo óptico programable de forma espectral. Se aplica un campo electromagnético a través del elemento de memristor con el fin de alterar sus propiedades espectrales. A su vez, también se alteran las propiedades espectrales de la radiación electromagnética que interactúa de forma óptica con el elemento de memristor. Esta alteración de las propiedades espectrales permite que el memristor se ``programe´´ para lograr una variedad de funciones de transmisión/reflexión/absorción.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2015/027331 WO2016171701A1 (en) | 2015-04-23 | 2015-04-23 | Spectrally programmable memristor |
Publications (1)
Publication Number | Publication Date |
---|---|
MX2017012530A true MX2017012530A (es) | 2018-01-18 |
Family
ID=57132848
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MX2017012530A MX2017012530A (es) | 2015-04-23 | 2015-04-23 | Memristor programable de forma espectral. |
Country Status (7)
Country | Link |
---|---|
US (1) | US10302973B2 (es) |
BR (1) | BR112017020042A2 (es) |
DE (1) | DE112015006195T5 (es) |
FR (1) | FR3035507A1 (es) |
GB (1) | GB2552747A (es) |
MX (1) | MX2017012530A (es) |
WO (1) | WO2016171701A1 (es) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10591634B2 (en) * | 2015-04-23 | 2020-03-17 | Halliburton Energy Services, Inc. | Spectrally programmable memristor-based optical computing |
US11105937B2 (en) * | 2015-12-31 | 2021-08-31 | Khalifa University of Science and Technology | Memristor based sensor for radiation detection |
US10910559B2 (en) * | 2018-06-01 | 2021-02-02 | Massachusetts Institute Of Technology | Optoelectronic memristor devices including one or more solid electrolytes with electrically controllable optical properties |
CN109065713B (zh) * | 2018-08-07 | 2020-07-31 | 电子科技大学 | 基于a-Si忆阻效应的SPR神经突触器件及其制备方法 |
CN109037443B (zh) * | 2018-08-07 | 2020-07-31 | 电子科技大学 | 基于a-SiNx忆阻效应的SPR神经突触器件及其制备方法 |
CN110057782B (zh) * | 2019-04-24 | 2021-09-21 | 电子科技大学 | 忆阻重构的近红外可调穿透深度生物传感器及方法 |
CN113629187B (zh) * | 2021-08-04 | 2024-01-02 | 北京航空航天大学 | 一种光电神经突触忆阻器 |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
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US3801966A (en) | 1971-08-18 | 1974-04-02 | Hitachi Ltd | Optical memory device |
US7596016B2 (en) | 2003-08-04 | 2009-09-29 | Ovonyx, Inc. | Optically accessible phase change memory |
US20050221473A1 (en) | 2004-03-30 | 2005-10-06 | Intel Corporation | Sensor array integrated circuits |
US7768815B2 (en) | 2005-08-23 | 2010-08-03 | International Business Machines Corporation | Optoelectronic memory devices |
US7580596B1 (en) | 2008-08-12 | 2009-08-25 | International Business Machines Corporation | Non-volatile programmable optical element with absorption coefficient modulation |
US8605483B2 (en) | 2008-12-23 | 2013-12-10 | Hewlett-Packard Development Company, L.P. | Memristive device and methods of making and using the same |
US8614432B2 (en) | 2009-01-15 | 2013-12-24 | Hewlett-Packard Development Company, L.P. | Crystalline silicon-based memristive device with multiple mobile dopant species |
US8081129B1 (en) * | 2009-03-31 | 2011-12-20 | Hewlett-Packard Development Company, L.P. | Memristive antenna |
US8477408B2 (en) | 2009-04-02 | 2013-07-02 | Hewlett-Packard Development Company, L.P. | Electronically reconfigurable planar crossbar array optical elements |
US8395191B2 (en) | 2009-10-12 | 2013-03-12 | Monolithic 3D Inc. | Semiconductor device and structure |
US8280054B2 (en) | 2009-04-30 | 2012-10-02 | Hewlett-Packard Development Company, L.P. | Scrambling and descrambling systems for secure communication |
US8081850B2 (en) | 2009-04-30 | 2011-12-20 | Hewlett-Packard Development Company, L.P. | Device with tunable plasmon resonance |
CN102648528B (zh) | 2009-06-25 | 2016-02-17 | 惠普开发有限公司 | 具有带有不同开关阈值的本征二极管的可开关结 |
CN101593810B (zh) | 2009-07-02 | 2011-04-06 | 黑龙江大学 | 纳米结构开关忆阻器及其制造方法 |
WO2011008195A2 (en) | 2009-07-13 | 2011-01-20 | Hewlett Packard Development Company L .P. | Memristive device |
KR20120046327A (ko) | 2009-09-04 | 2012-05-09 | 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘.피. | 혼합된-금속-원자가 화합물에 기초한 멤리스터 |
US20120154880A1 (en) * | 2009-09-10 | 2012-06-21 | Wei Wu | Optical modulators |
WO2011093888A1 (en) | 2010-01-29 | 2011-08-04 | Hewlett-Packard Development Company L.P. | Optical sensor networks and methods for fabricating the same |
US8542518B2 (en) | 2010-03-31 | 2013-09-24 | Hewlett-Packard Development Company, L.P. | Photo-responsive memory resistor and method of operation |
US8546785B2 (en) | 2010-03-31 | 2013-10-01 | Hewlett-Packard Development Company, L.P. | Memristive device |
US8114757B1 (en) | 2010-10-11 | 2012-02-14 | Monolithic 3D Inc. | Semiconductor device and structure |
JP5619296B2 (ja) | 2010-11-19 | 2014-11-05 | ヒューレット−パッカード デベロップメント カンパニー エル.ピー.Hewlett‐Packard Development Company, L.P. | メムリスティブデバイスを切り替えるための方法及び回路 |
US8735863B2 (en) | 2011-01-28 | 2014-05-27 | Privatran | Integrated nonvolatile resistive memory elements |
GB201111513D0 (en) | 2011-07-05 | 2011-08-17 | Ucl Business Plc | Memory resistors |
US8884285B2 (en) | 2011-07-13 | 2014-11-11 | Rutgers, The State University Of New Jersey | Multifunctional zinc oxide nano-structure-based circuit building blocks for re-configurable electronics and optoelectronics |
US9029173B2 (en) | 2011-10-18 | 2015-05-12 | Monolithic 3D Inc. | Method for fabrication of a semiconductor device and structure |
KR101298327B1 (ko) * | 2011-12-09 | 2013-08-20 | 제주대학교 산학협력단 | 광 저장 장치 및 방법 |
US8557632B1 (en) | 2012-04-09 | 2013-10-15 | Monolithic 3D Inc. | Method for fabrication of a semiconductor device and structure |
US8773167B2 (en) | 2012-07-30 | 2014-07-08 | Hewlett-Packard Development Company, L.P. | Implementing logic circuits with memristors |
US9847129B2 (en) * | 2014-07-28 | 2017-12-19 | Hewlett Packard Enterprise Development Lp | Memristor programming error reduction |
-
2015
- 2015-04-23 MX MX2017012530A patent/MX2017012530A/es unknown
- 2015-04-23 GB GB1714621.8A patent/GB2552747A/en not_active Withdrawn
- 2015-04-23 BR BR112017020042A patent/BR112017020042A2/pt not_active Application Discontinuation
- 2015-04-23 WO PCT/US2015/027331 patent/WO2016171701A1/en active Application Filing
- 2015-04-23 US US15/559,333 patent/US10302973B2/en active Active
- 2015-04-23 DE DE112015006195.9T patent/DE112015006195T5/de not_active Ceased
-
2016
- 2016-03-23 FR FR1652476A patent/FR3035507A1/fr active Pending
Also Published As
Publication number | Publication date |
---|---|
BR112017020042A2 (pt) | 2018-06-05 |
WO2016171701A1 (en) | 2016-10-27 |
US20180113330A1 (en) | 2018-04-26 |
GB201714621D0 (en) | 2017-10-25 |
US10302973B2 (en) | 2019-05-28 |
GB2552747A (en) | 2018-02-07 |
DE112015006195T5 (de) | 2017-11-02 |
FR3035507A1 (fr) | 2016-10-28 |
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