MX2013013032A - Circuito de conmutacion y modulo de semiconductor. - Google Patents

Circuito de conmutacion y modulo de semiconductor.

Info

Publication number
MX2013013032A
MX2013013032A MX2013013032A MX2013013032A MX2013013032A MX 2013013032 A MX2013013032 A MX 2013013032A MX 2013013032 A MX2013013032 A MX 2013013032A MX 2013013032 A MX2013013032 A MX 2013013032A MX 2013013032 A MX2013013032 A MX 2013013032A
Authority
MX
Mexico
Prior art keywords
switching element
electrode
switching circuit
semiconductor module
potential
Prior art date
Application number
MX2013013032A
Other languages
English (en)
Inventor
Yusuke Zushi
Yoshinori Murakami
Satoshi Tanimoto
Shinji Sato
Kohei Matsui
Original Assignee
Nissan Motor
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2011107171A external-priority patent/JP5619673B2/ja
Priority claimed from JP2011200308A external-priority patent/JP5843535B2/ja
Application filed by Nissan Motor filed Critical Nissan Motor
Publication of MX2013013032A publication Critical patent/MX2013013032A/es

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0676—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type comprising combinations of diodes, or capacitors or resistors
    • H01L27/0682—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type comprising combinations of diodes, or capacitors or resistors comprising combinations of capacitors and resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/165—Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
    • H03K17/166—Soft switching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate

Abstract

Un circuito de conmutación comprende: un primer elemento de conmutación (Q1); una resistencia (11) insertada entre un electrodo de control (G) para el mismo y un circuito de control (13), que controla por conmutación el mismo; un primer condensador (15) conectado entre el electrodo de control (G) para el primer elemento de conmutación (Q1) y un electrodo de lado de bajo potencial (S) para el primer elemento de conmutación (Q1); y un segundo elemento de conmutación (14). Un electrodo de lado de alto potencial para el segundo elemento de conmutación (14) se conecta al electrodo de control (G) para el primer elemento de conmutación (Q1), el electrodo de lado de bajo potencial para el segundo elemento de conmutación (14) se conecta al primer electrodo para el primer condensador (15), el otro electrodo para el primer condensador (15) se conecta al electrodo de lado de bajo potencial (S) para el primer elemento de conmutación (Q1), y un electrodo de control para el segundo elemento de conmutación (14) se conecta a un electrodo en el lado que.
MX2013013032A 2011-05-12 2012-05-11 Circuito de conmutacion y modulo de semiconductor. MX2013013032A (es)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011107171A JP5619673B2 (ja) 2011-05-12 2011-05-12 スイッチング回路及び半導体モジュール
JP2011200308A JP5843535B2 (ja) 2011-09-14 2011-09-14 半導体モジュール
PCT/JP2012/062129 WO2012153836A1 (ja) 2011-05-12 2012-05-11 スイッチング回路及び半導体モジュール

Publications (1)

Publication Number Publication Date
MX2013013032A true MX2013013032A (es) 2014-04-16

Family

ID=47139310

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2013013032A MX2013013032A (es) 2011-05-12 2012-05-11 Circuito de conmutacion y modulo de semiconductor.

Country Status (9)

Country Link
US (1) US8916882B2 (es)
EP (1) EP2712085B1 (es)
KR (1) KR101571952B1 (es)
CN (1) CN103620962B (es)
BR (1) BR112013028761A2 (es)
MX (1) MX2013013032A (es)
MY (1) MY157390A (es)
RU (1) RU2557456C2 (es)
WO (1) WO2012153836A1 (es)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6009932B2 (ja) * 2012-12-21 2016-10-19 株式会社東芝 ゲート駆動回路
WO2014115553A1 (ja) * 2013-01-24 2014-07-31 パナソニック株式会社 ハーフブリッジ回路及びハーフブリッジ回路から構成されるフルブリッジ回路及び３相インバータ回路
DE102014210342A1 (de) * 2014-06-02 2015-12-03 Robert Bosch Gmbh Verfahren zum Betreiben einer Treiberschaltung zum Ansteuern einer Feldeffekttransistorstruktur
CN104779815B (zh) * 2015-04-02 2017-08-01 西安交通大学 一种可替换IGBT模块的SiC MOSFET智能功率集成模块
CN105161491B (zh) * 2015-09-22 2019-03-15 苏州东微半导体有限公司 一种集成栅极驱动功率器件及其制备方法
JP6561794B2 (ja) * 2015-11-20 2019-08-21 トヨタ自動車株式会社 スイッチング回路
US10243476B2 (en) * 2015-12-24 2019-03-26 Kabushiki Kaisha Yaskawa Denki Power conversion device and power conversion method
JP6613899B2 (ja) * 2016-01-05 2019-12-04 富士電機株式会社 半導体素子の駆動装置
US10141923B2 (en) * 2016-08-25 2018-11-27 Toyota Motor Engineering & Manufacturing North America, Inc. System and method for eliminating gate voltage oscillation in paralleled power semiconductor switches
JP6699487B2 (ja) 2016-09-23 2020-05-27 アイシン・エィ・ダブリュ株式会社 スイッチング素子駆動回路
WO2018186353A1 (ja) 2017-04-05 2018-10-11 ローム株式会社 パワーモジュール
JP6443518B1 (ja) * 2017-09-29 2018-12-26 サンケン電気株式会社 ゲート駆動回路
JP2019140722A (ja) * 2018-02-06 2019-08-22 トヨタ自動車株式会社 電力変換装置
JP6919592B2 (ja) * 2018-02-09 2021-08-18 トヨタ自動車株式会社 スイッチング回路
DE112019000291T5 (de) * 2018-02-23 2020-10-01 Rohm Co., Ltd. Halbleiterbauteil und Leistungsmodul
US10596807B2 (en) * 2018-03-19 2020-03-24 Fuji Xerox Co., Ltd. Capacitive load driving circuit and image forming apparatus
US11863062B2 (en) * 2018-04-27 2024-01-02 Raytheon Company Capacitor discharge circuit
US10749019B2 (en) * 2018-07-03 2020-08-18 Semiconductor Components Industries, Llc Circuit and electronic device including an enhancement-mode transistor
KR102159110B1 (ko) * 2019-01-30 2020-09-23 만도헬라일렉트로닉스(주) 차량용 모터 구동장치
US20220085171A1 (en) * 2019-02-21 2022-03-17 North Carolina State University Power devices having tunable saturation current clamps therein that support improved short-circuit capability and methods of operating same
CN113544858A (zh) * 2019-03-18 2021-10-22 三菱电机株式会社 碳化硅半导体装置及其制造方法、电力变换装置
JP6777193B2 (ja) * 2019-05-27 2020-10-28 日産自動車株式会社 スイッチング回路装置
CN113054829B (zh) * 2019-12-26 2022-06-21 湖南国芯半导体科技有限公司 一种碳化硅mosfet驱动电路
CN112615605A (zh) * 2020-12-04 2021-04-06 珠海格力电器股份有限公司 自定义igbt端口阻抗的智能功率模块

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5117123A (en) * 1990-04-30 1992-05-26 Thomson Consumer Electronics, Inc. Diode switch providing temperature compensated d.c. bias for cascaded amplifier
JP2868170B2 (ja) 1992-07-28 1999-03-10 東洋電機製造株式会社 スイッチング素子の駆動回路
JP3568823B2 (ja) 1999-05-24 2004-09-22 東芝三菱電機産業システム株式会社 絶縁ゲート型半導体素子のゲート制御回路
JP4722341B2 (ja) * 2001-08-09 2011-07-13 東芝三菱電機産業システム株式会社 ゲートノイズ抑制回路
JP5011621B2 (ja) * 2001-08-14 2012-08-29 サンケン電気株式会社 自励式ｄｃ−ｄｃコンバータ
JP2003161355A (ja) * 2001-11-26 2003-06-06 Honda Motor Co Ltd トロイダル無段変速機
JP2003324966A (ja) * 2002-04-26 2003-11-14 Denso Corp インバータ駆動回路
JP2004014547A (ja) * 2002-06-03 2004-01-15 Toshiba Corp 半導体装置及び容量調節回路
JP2008306618A (ja) * 2007-06-11 2008-12-18 Nissan Motor Co Ltd 電圧駆動型素子を駆動するための駆動回路
JP5492518B2 (ja) * 2009-10-02 2014-05-14 株式会社日立製作所 半導体駆動回路、及びそれを用いた半導体装置

Also Published As

Publication number Publication date
KR20140011399A (ko) 2014-01-28
RU2557456C2 (ru) 2015-07-20
RU2013155087A (ru) 2015-06-20
US8916882B2 (en) 2014-12-23
EP2712085A1 (en) 2014-03-26
EP2712085B1 (en) 2016-02-03
WO2012153836A1 (ja) 2012-11-15
CN103620962A (zh) 2014-03-05
US20140091324A1 (en) 2014-04-03
CN103620962B (zh) 2016-06-22
EP2712085A4 (en) 2015-02-11
MY157390A (en) 2016-06-15
BR112013028761A2 (pt) 2017-01-24
KR101571952B1 (ko) 2015-11-25

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